Datasheet SGL-0163 Datasheet (Stanford Microdevices)

Product Description

Stanford Microdevices SGL-0163 is a high performance
cascadeable 50-ohm low noise amplifier designed for
operation at voltages as low as 2.5V. The SGL-0163 can be
operated at 3V for low power or 4V for medium power
applications. This RFIC uses the latest Silicon Germanium
Heterostructure Bipolar Transistor (SiGe HBT) process
featuring 1 micron emitters with F

Internally matched to 50 Ohm impedance, the SGL-0163
requires only an RF choke, DC blocking and bypass capaci­tors for external components. This device has an internal
temperature compensation circuit and can be operated
directly from 3-4V supply.

Small Signal Gain vs. Frequency

20

15

10

dB

5

0

800 850 900 950 1000

Frequency MHz

up to 50 GHz.

T

3V,11mA
4V,25mA

Preliminary

Preliminary

SGL-0163

800-1000 MHz Low Noise Amplifier
50 Ohm, Silicon Germanium

Product Features

 Low Noise Figure
 High Input Intercept
 Internal Temp. Compensation Circuit
 Internally Matched to 50 W
 Unconditionally Stable
 Low Power Consumption
 Single Voltage Supply
 Small Package: SOT-363

Applications

 Receivers
 Cellular, Fixed Wireless, Land Mobile

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0

P

Bd1

PII

3

S

12

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S

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The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.

522 Almanor Ave., Sunnyvale, CA 94085

niaGlangiSllamSzHM009=fBd5.310.515.617.51

S

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:snoitidnoCtseT:sretemaraP

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noisserpmoCBd1tarewoPtuptuOzHM009=fmBd0.50.11

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smhO05=zHM009=fBd1.15.1

zHM009=fmBd4.68.11

Phone: (800) SMI-MMIC http://www.stanfordmicro.com

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1

V3=ccV

.niM

V3=ccV

.pyT

V3=ccV

.xaM

EDS-101501 Rev A

.pyT

V4=ccV

SGL-0163 800-1000 MHz SiGe Low Noise Amplifier

Absolute Maximum Ratings

Preliminary

Preliminary

Operation of this device above any one of these
parameters may cause permanent damage.

Bias Conditions should also satisfy the following
expression: I

#niPnoitcnuFnoitpircseDcitamehcSeciveD

1 C/N

2 C/N.noitcennoCoN

3 NIFRfoesuehtseriuqernipsihT.niptupniFR

4 ccVebdluohsnipsihT.noitcennocylppuS

5 DNGtsebroF.dnuorgotdetcennoC

6 TUOFR

(max) < (TJ - TOP)/Rth,j-l

DVD

CCV

.noitcennoCoN

retemaraPeulaVtinU

tnerruCylppuS54Am

erutarepmeTgnitarepO58+ot04-Cº

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erutarepmeTnoitcnuJgnitarepO051+Cº

)ledoMydoBnamuH(egatlovDSE004V

Vcc

RF In

Bias ckt

with
temp.
comp.

RF Out / Vcc

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(saibR W)

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(saibR W)

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Application Schematic

0.1µF

22pF

Rbias

Vs

22nH

50 Ohm

microstrip

4

50 Ohm

microstrip

63

100pF

The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.

522 Almanor Ave., Sunnyvale, CA 94085

Phone: (800) SMI-MMIC http://www.stanfordmicro.com

5

2

100pF

EDS-101501 Rev A

Bias Voltage: 3V

S21 vs. Frequency

25

20

15

dB

10

5

0

00.511.522.533.544.55

GHz

0

-5

dB

-10

-15

Preliminary

Preliminary

SGL-0163 800-1000 MHz SiGe Low Noise Amplifier

NF vs. Frequency

-40C
+25C
+85C

-40C
+25C
+85C

5

4.5
4

3.5
3

2.5

dB

2

1.5
1

0.5
0

00.511.52

GHz

S22 vs. FrequencyS11 vs. Frequency

0

-5

-10

dB

-15

-20

-40C
+25C
85

-40C
+25C
+85C

-20
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

-25
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

GHz GHz

Typical S-Parameters including evaluation board @ T = 25ºC

11S 12S 21S 22S

zHGqerF Bd gnA Bd gnA Bd gnA Bd gnA

50.0

01.0

02.0

04.0

06.0

07.0

08.0

09.0

00.1

01.1

02.1

04.1

06.1

08.1

00.2

00.3

00.4

00.5

The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.

522 Almanor Ave., Sunnyvale, CA 94085

56.1-01.01-33.0102.311-10.75-23.951-64.0-92.761

35.1-40.12-37.5195.631-78.34-15.15166.0-65.141

65.1-50.64-09.9123.971-79.43-71.61175.1-85.79

87.3-59.49-91.0244.31179.62-96.8689.4-87.92

59.6-01.331-99.7149.8695.32-63.6361.8-53.51-

93.8-19.941-98.6112.1575.22-78.2204.9-66.33-

37.9-33.661-68.5132.5324.12-95.0125.01-81.05-

89.01-47.67129.4191.0206.02-81.1-55.11-26.66-

53.21-91.16159.3139.579.91-37.31-80.31-20.28-

39.21-52.54122.3176.6-82.91-23.42-87.31-26.19-

96.31-71.92194.2146.91-56.81-91.53-54.41-59.501-

56.41-02.4981.1169.44-94.71-66.65-41.61-37.331-

98.41-14.2650.0113.96-16.61-71.87-18.71-89.161-

39.41-29.2379.821.39-37.51-36.99-04.91-83.961

55.41-97.599.724.611-11.51-88.021-29.02-30.931

87.31-82.89-54.359.23163.31-42.63129.02-57.01-

45.01-77.76182.165.8395.11-97.5401.91-34.231-

66.9-25.3466.064.86-84.9-91.75-07.91-62.901

Phone: (800) SMI-MMIC http://www.stanfordmicro.com

3

EDS-101501 Rev A

Bias Voltage: 4V

Preliminary

Preliminary

SGL-0163 800-1000 MHz SiGe Low Noise Amplifier

S21 vs. Frequency

30

25

20

15

dB

10

5

0

00.511.522.533.544.55

-40C
+25C
+85C

GHz

0

-5

dB

-10

-15

-20
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

-40C
+25C
+85C

GHz GHz

Typical S-Parameters including evaluation board @ T = 25ºC

11S 12S 21S 22S

zHGqerF Bd gnA Bd gnA Bd gnA Bd gnA

50.0

01.0

02.0

04.0

06.0

07.0

08.0

09.0

00.1

01.1

02.1

04.1

06.1

08.1

00.2

00.3

00.4

00.5

29.2-28.9-77.4196.711-45.35-42.861-74.0-42.761

07.2-70.12-88.9102.541-70.74-37.44127.0-03.141

99.2-87.74-30.3227.66161.63-27.21180.2-13.79

98.5-03.39-16.1288.10137.72-10.3779.5-50.53

32.9-00.721-69.8164.1629.32-54.1422.9-88.6-

08.01-71.241-77.7171.5418.22-77.8263.01-66.42-

72.21-73.751-17.6141.0326.12-12.6155.11-46.04-

47.31-81.371-47.5139.5156.02-77.245.21-72.75-

04.51-27.37137.4182.208.91-86.9-72.41-59.17-

10.61-59.75189.3147.9-81.91-23.02-29.41-62.18-

79.61-99.04142.3113.22-04.81-91.13-75.51-97.59-

12.81-70.50169.1136.64-81.71-20.45-65.71-15.321-

16.81-81.9618.0124.07-91.61-59.57-96.91-38.051-

36.81-35.7307.966.39-24.51-65.79-87.12-84.971

38.71-38.837.875.611-77.41-75.911-60.42-35.941

61.61-65.19-41.456.33170.31-25.53110.32-46.11-

76.11-26.47109.173.0414.11-11.5408.91-20.831-

95.01-86.6463.125.66-23.9-61.95-21.02-12.89

NF vs. Frequency

5

4.5
4

3.5
3

2.5

dB

2

1.5
1

0.5
0

00.511.52

-40C
+25C
85

GHz

S22 vs. FrequencyS11 vs. Frequency

0

-5

-10

-40C
+25C
+85C

dB

-15

-20

-25

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.

522 Almanor Ave., Sunnyvale, CA 94085

Phone: (800) SMI-MMIC http://www.stanfordmicro.com

4

EDS-101501 Rev A

Caution: ESD sensitive

Appropriate precautions in handling, packaging and
testing devices must be observed.

Preliminary

Preliminary

SGL-0163 800-1000 MHz SiGe Low Noise Amplifier

2.20 (0 .087)

2.00 (0 .079)

L3

123

Package Dimensions

2.20 (0.087)

1.80 (0.071)

0.10 (0.004)

0.00 (0.00)

456

1.30 (0.051)
REF.

1.35 (0.053)

1.15 (0.045)

0.650 BSC (0.025)

1.00 (0.039)

0.80 (0.031)

1C/N

2C/N

3niFR

4ccV

5DNG

6ccV/tuoFR

0.30 REF.

0.035

Note: Pin 1 is on lower left when

noitangiseDniP

you can read package marking

Pad Layout

0.026

0.016

0.425 (0.017)

0.075

TYP.

0.20 (0.0080

0.10 (0.004)

0.25 (0.010)

0.15 (0.006)

10°

0.30 (0.012)

0.10 (0.0040

DIMENSIONS ARE IN INCHES [MM]

The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.

522 Almanor Ave., Sunnyvale, CA 94085

Phone: (800) SMI-MMIC http://www.stanfordmicro.com

5

EDS-101501 Rev A

SGL-0163 800-1000 MHz SiGe Low Noise Amplifier

Evaluation Board layout

L3

Preliminary

Preliminary

Suggested Components

erutcafunaMrebmuNtraPnoitpircseDeulaV

mhoRKJ002A581HCM

mhoRKJ101A581HCM

mhoRKZ401NF281HCM

OKOTJN22HF-8061LL

The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.

522 Almanor Ave., Sunnyvale, CA 94085

Phone: (800) SMI-MMIC http://www.stanfordmicro.com

6

roticapaCFp22

roticapaC

1

roticapaC

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00

Fp

1.0

Fu

EDS-101501 Rev A