Datasheet SGF80N60UF Datasheet (Fairchild Semiconductor)

October 2001

SGF80N60UF

IGBT

SGF80N60UF

Ultra-Fast IGBT

General Description

Fairchild's Insulated Gate Bipolar Transistor(IGBT) UF
series provides low conduction and switching losses.
UF series is designed for the applications such as motor
control and general inverters where High Speed Switching
is required.

Application

AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls

TO-3PF

G

C

E

Absolute Maximum Ratings T

Symbol Description SGF80N60UF Units

V

CES

V

GES

I

C

I

CM (1)

P

D

T

Operating Junction Temperature -55 to +150 °C

J

T

stg

T

L

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Collector-Emitter Voltage 600 V
Gate-Emitter Voltage ± 20 V
Collector Current @ TC = 25°C80 A
Collector Current @ T
Pulsed Collector Current 220 A
Maximum Power Dissipation @ TC = 25°C110 W
Maximum Power Dissipation @ T

Storage Temperature Range -55 to +150 °C
Maximum Lead Temp. for Soldering

Purposes, 1/8” from Case for 5 Seconds

TO-3PF

= 25°C unless otherwise noted

C

Features

• High Speed Switching

• Low Saturation Voltage : V

• High Input Impedance

C

C

G

G

E

E

= 100°C40 A

C

= 100°C45 W

C

300 °C

= 2.1 V @ IC = 40A

CE(sat)

Thermal Characteristics

Symbol Parameter Typ. Max. Units

R

θJC

R

θJA

©2001 Fairchild Semiconductor Corporation

Thermal Resistance, Junction-to-Case -- 1.1 °C/W
Thermal Resistance, Junction-to-Ambient -- 40 °C/W

SGF80N60UF Rev. A

SGF80N60UF

Electrical Characteristics of IGBT T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

∆B
∆T

I

CES

I

GES

CES

VCES
J

Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V

/

Temperature Coeff. of Breakdown
Voltage
Collector Cut-Off Current VCE = V
G-E Leakage Current VGE = V

V

= 0V, IC = 1mA -- 0.6 -- V/°C

GE

, VGE = 0V -- -- 250 uA

CES

, VCE = 0V -- -- ± 100 nA

GES

On Characteristics

V

GE(th)

V

CE(sat)

G-E Threshold Voltage IC = 40mA, VCE = V

,

Collector to Emitter
Saturation Voltage

I
I

= 40A

C

= 80A

C

VGE = 15V

,

VGE = 15V

GE

3.5 4.5 6.5 V

-- 2.1 2.6 V

-- 2.6 -- V

Dynamic Characteristics

C

ies

C

oes

C

res

Input Capacitance
Output Capacitance -- 350 -- pF
Reverse Transfer Capacitance -- 100 -- pF

= 30V, VGE = 0V,

V

CE

f = 1MHz

-- 2790 -- pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

Total Switching Loss -- 1160 1500 uJ

ts

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

Total Switching Loss -- 1580 2000 uJ

E

ts

Q

g

Q

ge

Q

gc

L

e

Turn-On Delay Time

-- 23 -- ns
Rise Time -- 50 -- ns
Turn-Off Delay Time -- 90 130 ns
Fall Time -- 50 150 ns
Turn-On Switching Loss -- 570 -- uJ

V

= 300 V, IC = 40A,

CC

R

= 5Ω, V

G

GE

= 15V,

Inductive Load, T

= 25°C

C

Turn-Off Switching Loss -- 59 0 -- uJ

Turn-On Delay Time

-- 30 -- ns
Rise Time -- 55 -- ns
Turn-Off Delay Time -- 150 200 ns
Fall Time -- 160 250 ns
Turn-On Switching Loss -- 630 -- uJ

= 300 V, IC = 40A,

V

CC

R

G

= 5Ω, V

GE

= 15V,

Inductive Load, T

= 125°C

C

Turn-Off Switching Loss -- 940 -- uJ

Total Gate Charge
Gate-Emitter Charge -- 25 40 nC
Gate-Collector Charge -- 60 90 nC

= 300 V, IC = 40A,

V

CE

V

GE

= 15V

-- 175 250 nC

Internal Emitter Inductance Measured 5mm from PKG -- 14 -- nH

©2001 Fairchild Semiconductor Corporation SGF80N60UF Rev. A

SGF80N60UF

250

Common Emitter

℃

TC = 25

200

[A]

C

150

100

Collector Current, I

50

0

02468

20V

15V

VGE = 10V

Collector - Emitter Voltage, VCE [V]

Fig 1. Typical Output Characteristics

4

Comm on Emitt er
V

= 15V

[V]

CE

Collector - Emitter Voltage, V

GE

3

2

1

0

0306090120150

80A

40A

IC = 20A

Case Temperature, TC [℃]

12V

120

Commo n Emitter
V

= 15V

GE

T

= 25℃

C

100

T

= 125℃

C

80

[A]

C

60

40

Collector Current, I

20

0

0.5 1 10

Collector - Emitter Voltage, VCE [V]

Fig 2. Typical Saturation Voltage
Characteristics

50

40

30

20

Load Current [A]

10

Duty cycle : 50%

℃

= 100

T

C

Power Dissipation = 26W

0

0.1 1 10 100 1000

VCC = 300V
Load Current : peak of square wave

Frequency [Khz]

Fig 3. Saturation Voltage vs. Case

Fig 4. Load Current vs. Frequ ency

Temperature at Variant Current Level

20

16

[V]

CE

12

8

4

Collector - Emitter Voltage, V

0

048121620

IC = 20A

40A

80A

Common Emitter

℃

T

= 25

C

Gate - Emitter Voltage, VGE [V]

Fig 5. Satur ation Voltage vs. V

©2001 Fairchild Semiconductor Corporation SGF80N60UF Rev. A

Fig 6. Saturation Voltage vs. VGE

GE

20

16

[V]

CE

12

8

4

Collector - Emitter Voltage, V

0

IC = 20A

048121620

40A

80A

Common Emitter

℃

T

= 125

C

Gate - Emitter Voltage, VGE [V]

SGF80N60UF

4500

4000

3500

3000

2500

2000

Capacitance [pF]

1500

1000

500

0

11030

Cies

Coes

Cres

Common Emitter
V

= 0V, f = 1MHz

GE

℃

T

= 25

C

500

100

Switching Time [ns]

Collector - Emitter Voltage, VCE [V]

Fig 7. Capaci tance Chara cteristi cs

Fig 8. Turn-On Characteristics vs.
Gate Resistance

2000

1000

Common Emitter
V

= 300V, VGE = ±15V

CC

I

= 40A

C

T

= 25℃

C

T

= 125℃

C

Toff

Tf

5000

1000

Common Emitter
VCC = 300V, VGE = ±15V
IC = 40A
TC = 25℃
T

= 125℃

C

20

11070

Ton

Tr

Gate Resistance, RG [Ω]

Common Emitter

= 300V, VGE = ±15V

V

CC

I

= 40A

C

T

= 25℃

C

T

= 125℃

C

Eoff
Eon

Eoff

100

Switching Time [ns]

20

11080

Tf

Gate Resistance, RG [Ω]

Fig 9. Turn-Off Characteristics vs.
Gate Resistance

500

Comm o n Emitt er
V

= 300V, VGE = ±15V

CC

R

= 5

Ω

G

TC = 25℃
T

= 125℃

C

100

Switching Time [ns]

Ton

Tr

10

10 20 30 40 50 60 70 80

Collector Cur rent, IC [A]

Switching Loss [uJ]

100

11080

Gate Resistance, RG [Ω]

Fig 10. Switching Loss vs. Gate Resistance

2000

Common Emitter
V

= 300V, VGE = ±15V

CC

1000

R

= 5

Ω

G

TC = 25℃
T

= 125℃

C

100

Switching Time [ns]

20

10 20 30 40 50 60 70 80

Collector Current, IC [A]

Toff

Tf

Toff

Tf

Fig 11. Turn-On Characteristics vs.
Collector Current

©2001 Fairchild Semiconductor Corporation SGF80N60UF Rev. A

Fig 12. Turn-Off Characteristics vs.
Collector Current

SGF80N60UF

3000

1000

Eoff

100

Switching Loss [uJ]

Eon

10

0 1020304050607080

Common Emitter
V

= 300V, VGE = ±15V

CC

Ω

R

= 5

G

TC = 25℃
T

= 125℃

C

Collector Current, IC [A]

Fig 13. Switching Loss vs. Collector Current

500

IC MAX. (Pulsed)

100

IC MAX. (Continuous)

[A]

C

10

DC Operation

Single Nonrepetitive

1

Collector Cu rrent, I

Pulse TC = 25
Curves must be derated
linearly with increase
in temperature

0.1

0.3 1 10 100 1000

℃

Collector-Emitter Voltage, VCE [V]

50us

100us

㎳

1

15

Common Emitter

Ω

RL = 7.5

℃

TC = 25

12

[ V ]

GE

9

300 V

6

VCC = 100 V

3

200 V

Gate - Emitter Voltage, V

0

0 30 60 90 120 150 180

Gate Charge, Qg [ nC ]

Fig 14. Gate Charge Characteristics

500

100

[A]

C

10

Collector Current, I

Safe Operating Area

1

1 10 100 1000

VGE=20V, TC=100oC

Collector-Emitter Voltage, VCE [V]

Fig 15. SOA Characteristics

Fig 16. Turn-Off SOA Characteristics

10

1

0.5

0.2

0.1

0.1

0.05

0.02

Thermal Response [Zthjc]

0.01

0.01
single pulse

Pdm

t1

t2

Duty factor D = t1 / t2
Peak Tj = Pdm

Zthjc + T

×

C

1E-5 1E-4 1E-3 0.01 0.1 1 10

Rectangular Pulse Duration [sec]

Fig 17. Transient Thermal Impedance of IGBT

©2001 Fairchild Semiconductor Corporation SGF80N60UF Rev. A

Package Dimension

SGF80N60UF

TO-3PF

5.50 ±0.20

26.50 ±0.20

4.50 ±0.20

14.50 ±0.20

16.50 ±0.20

2.00 ±0.20

2.00 ±0.20

4.00 ±0.20

2.00 ±0.20

15.50 ±0.20

ø3.60 ±0.20

2.50 ±0.20

2.00 ±0.20

10.00 ±0.20

0.85 ±0.03

16.50 ±0.20

3.00 ±0.20
(1.50)

10°

23.00 ±0.20

22.00 ±0.20

1.50 ±0.20

2.00 ±0.20

3.30

14.80 ±0.20

©2001 Fairchild Semiconductor Corporation SGF80N60UF Rev. A

0.75

5.45TYP

[5.45

±0.30]

3.30 ±0.20

+0.20
–0.10

2.00 ±0.20

5.45TYP

[5.45

±0.30]

5.50 ±0.20

0.90

±0.20

+0.20
–0.10

Dimensions in Millimeters

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2

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E
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®

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®

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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

Preliminary First Production This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Obsolete Not In Production This datasheet contains specifications on a product

©2001 Fairchild Semiconductor Corporation

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H4