Page 1
SGF5N150UF
IGBT
SGF5N150UF
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT)
provides low conduction and switching losses.
SGF5N150UF is designed for the Switching Power
Supply applications.
Application
Switching Power Supply - High Input Voltage Off-line Converter
F
3
P
O
T
C E
G
Absolute Maximum Ratings
Symbol Description SGF5N150UF Units
V
CES
V
GES
I
C
I
CM (1)
P
D
T
Operating Junction Temperature -55 to +150 °C
J
T
stg
T
L
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Collector-Emitter Voltage 1500 V
Gate-Emitter Voltage ± 20 V
Collector Current @ TC = 25°C10 A
Collector Current @ T
Pulsed Collector Current 20 A
Maximum Power Dissipation @ TC = 25°C 62.5 W
Maximum Power Dissipation @ T
Storage Temperature Range -55 to +150 °C
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
-
TC = 25°C unless otherwise noted
Features
• High Speed Switching
• Low Saturation Voltage : V
• High Input Impedance
G
G
= 100°C5 A
C
= 100°C25 W
C
300 °C
= 4.7 V @ IC = 5A
CE(sat)
C
C
E
E
Thermal Characteristics
Symbol Parameter Typ. Max. Units
R
θJC
R
θJA
©2003 Fairchild Semiconductor Corporation SGF5N150UF Rev. B
Thermal Resistance, Junction-to-Case -- 2.0 °C/W
Thermal Resistance, Junction-to-Ambient -- 40 °C/W
Page 2
SGF5N150UF
Electrical Characteristics of IGBT
T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
I
CES
I
GES
CES
Collector-Emitter Breakdown Voltage VGE = 0V, IC = 1mA 1500 -- -- V
Collector Cut-Off Current VCE = V
G-E Leakage Current VGE = V
, VGE = 0V -- -- 1.0 mA
CES
, VCE = 0V -- -- ± 100 nA
GES
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage IC = 5mA, VCE = V
Collector to Emitter
Saturation Voltage
,
= 5A
C
VGE = 10V
I
GE
2.0 3.0 4.0 V
-- 4.7 5.5 V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance -- 130 -- pF
Reverse Transfer Capacitance -- 70 -- pF
= 10V, VGE = 0V,
V
CE
f = 1MHz
-- 780 -- pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
E
E
Q
Q
Q
on
off
ts
g
ge
gc
Turn-On Delay Time
= 600 V
V
Rise Time -- 15 -- ns
Turn-Off Delay Time -- 30 50 ns
Fall Time -- 70 120 ns
Turn-On Switching Loss -- 190 -- uJ
Turn-Off Switching Loss -- 100 -- uJ
Total Switching Loss -- 290 580 uJ
Total Gate Charge
Gate-Emitter Charge -- 3 5 nC
Gate-Collector Charge -- 15 25 nC
CC
= 5A
I
C
R
=10Ω
G
= 10V
V
GE
Inductive Load
T
C
V
V
= 25°C
= 600 V, IC = 5A
CE
GE
= 10V
-- 10 -- ns
-- 30 45 nC
©2003 Fairchild Semiconductor Corporation
SGF5N150UF Rev. B
Page 3
SGF5N150UF
80
70
60
50
40
Ic [A]
30
20
10
0
0 5 10 15 20
Vce [V]
20 V
15 V
10 V
Vge=5 V
Vge=10V
50
℃
40
30
Ic [A]
20
10
0
0 4 8 121620
Tc = 25
Tc = 100
Vce [V]
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
12
10
8
6
Vge = 10V
Ic [A]
4
2
8.0
7.5
7.0
6.5
6.0
5.5
Vce(sat) [V]
5.0
4.5
Vge=10V
Ic =10A
Ic = 5A
℃
0
25 50 75 100 125 150
Tc [℃]
Fig 3. Maximum Collector Current vs.
Case Temperature
10
8
6
4
Load Current [A]
2
Duty cycle : 50%
Tc = 100 oC
Power Dissipation = 12W
0
0.1 1 10 100 1000
Vcc = 600V
Load Current : peak of square wave
Frequency [kHz]
Fig 5. Load Current vs. Frequency
4.0
20 40 60 80 100 120 140
Tc [℃]
Fig 4. Saturation Voltage vs.
Case Temperature
10
0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
Thermal Response [Zthjc]
single pulse
0.01
1E-5 1E-4 1E-3 0.01 0.1 1 10
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
Fig 6. Transient Thermal Impedance
of IGBT Junction to Case
Zthjc + T
×
C
©2003 Fairchild Semiconductor Corporation
SGF5N150UF Rev. B
Page 4
SGF5N150UF
1200
1000
800
600
400
Capacitance [pF]
200
0
110
Cies
Coes
Cres
Vce [V]
Fig 7. Typical Capacitance vs.
Collector to Emitter Voltage
600
Vcc = 600V
Ic = 5A
500
400
300
Energy [uJ]
Esw
Eon
Common Emitter
10
= 120Ω, VCC = 600V
R
L
T
= 25oC
C
8
[V]
GE
6
4
2
G a te - Emitter V o lta g e , V
0
0102030
G a te Ch a rg e, Qg [ n C]
Fig 8. Typical Gate Charge Characteristic
1200
Vcc = 600V
Ω
Rg = 10
Vge = 10V
1000
800
600
Energy [uJ]
Ic = 10A
Ic = 5A
200
100
0 5 10 15 20 25 30
Fig 9. Typical Switching Loss vs.
Gate Resistance
1.2
Vcc = 600V
Ω
Rg = 10
℃
Tc = 100
1.0
0.8
0.6
Energy [mJ]
0.4
0.2
46810
Fig 1 1. Typical Sw itching Loss vs.
Collector Current
©2003 Fairchild Semiconductor Corporation
Rg [Ω]
Ic [A]
Esw
Eon
Eoff
Eoff
400
200
20 40 60 80 100
Ic = 3A
Tc [℃]
Fig 10. Typical Switch i ng Loss vs.
Case Temperature
10
Ic [A]
Safe Operating Area
Vge = 20V, Tc = 100
1
1 10 100 1000
℃
Vce [V]
Fig 12. Turn-Off SOA
SGF5N150UF Rev. B
Page 5
Package Dimension
TO-3PF (FS PKG CODE AG)
SGF5N150UF
5.50 ±0.20
26.50 ±0.20
4.50 ±0.20
14.50 ±0.20
16.50 ±0.20
2.00 ±0.20
2.00 ±0.20
4.00 ±0.20
2.00 ±0.20
15.50 ±0.20
ø3.60 ±0.20
2.50 ±0.20
2.00 ±0.20
10.00 ±0.20
0.85 ±0.03
16.50 ±0.20
3.00 ±0.20
(1.50)
10°
23.00 ±0.20
22.00 ±0.20
1.50 ±0.20
2.00 ±0.20
3.30
14.80 ±0.20
©2003 Fairchild Semiconductor Corporation SGF5N150UF Rev. B
0.75
5.45TYP
[5.45
±0.30]
3.30 ±0.20
+0.20
–0.10
2.00 ±0.20
5.45TYP
[5.45
±0.30]
5.50 ±0.20
0.90
±0.20
+0.20
–0.10
Dimensions in Millimeters
Page 6
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
2
CMOS™
E
EnSigna™
Across the board. Around the world.™
Across the board. Around the world™
The Power Franchise™
FACT™
FACT Quiet series™
®
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
2
C™
I
ImpliedDisconnect™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC
®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
SILENT SWITCHER
SMART START™
SPM™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic
TruTranslation™
UHC™
UltraFET
®
VCX™
®
®
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I2©2003 Fairchild Semiconductor Corporation
Loading...