Page 1
October 2001
SGF40N60UF
IGBT
SGF40N60UF
Ultra-Fast IGBT
General Description
Fairchild's Insulated Gate Bipolar Transistor(IGBT) UF
series provides low conduction and switching losses.
UF series is designed for the applications such as motor
control and general inverters where High Speed Switching
is required.
Application
AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls
G
C
E
Absolute Maximum Ratings T
Symbol Description SGF40N60UF Units
V
CES
V
GES
I
C
I
CM (1)
P
D
T
Operating Junction Temperature -55 to +150 °C
J
T
stg
T
L
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Collector-Emitter Voltage 600 V
Gate-Emitter Voltage ± 20 V
Collector Current @ TC = 25°C40 A
Collector Current @ T
Pulsed Collector Current 160 A
Maximum Power Dissipation @ TC = 25°C 100 W
Maximum Power Dissipation @ T
Storage Temperature Range -55 to +150 °C
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
TO-3PF
= 25°C unless otherwise noted
C
Features
• High Speed Switching
• Low Saturation Voltage : V
• High Input Impedance
C
C
G
G
E
E
= 100°C20 A
C
= 100°C40 W
C
300 °C
= 2.1 V @ IC = 20A
CE(sat)
Thermal Characteristics
Symbol Parameter Typ. Max. Units
R
θJC
R
θJA
©2001 Fairchild Semiconductor Corporation
Thermal Resistance, Junction-to-Case -- 1.2 °C/W
Thermal Resistance, Junction-to-Ambient -- 40 °C/W
SGF40N60UF Rev. A
Page 2
SGF40N60UF
Electrical Characteristics of IGBT T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
∆B
∆T
I
CES
I
GES
CES
VCES
J
Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V
/
Temperature Coeff. of Breakdown
Voltage
Collector Cut-Off Current VCE = V
G-E Leakage Current VGE = V
V
= 0V, IC = 1mA -- 0.6 -- V/°C
GE
, VGE = 0V -- -- 250 uA
CES
, VCE = 0V -- -- ± 100 nA
GES
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage IC = 20mA, VCE = V
,
Collector to Emitter
Saturation Voltage
I
I
= 20A
C
= 40A
C
VGE = 15V
,
VGE = 15V
GE
3.5 4.5 6.5 V
-- 2.1 2.6 V
-- 2.6 -- V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance -- 170 -- pF
Reverse Transfer Capacitance -- 50 -- pF
= 30V, VGE = 0V,
V
CE
f = 1MHz
-- 1430 -- pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
Total Switching Loss -- 360 600 uJ
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Total Switching Loss -- 740 1200 uJ
E
ts
Q
g
Q
ge
Q
gc
L
e
Turn-On Delay Time
-- 15 -- ns
Rise Time -- 30 -- ns
Turn-Off Delay Time -- 65 130 ns
Fall Time -- 50 150 ns
Turn-On Switching Loss -- 160 -- uJ
V
= 300 V, IC = 20A,
CC
R
= 10Ω, V
G
GE
Inductive Load, T
= 15V,
= 25°C
C
Turn-Off Switching Loss -- 20 0 -- uJ
Turn-On Delay Time
-- 30 -- ns
Rise Time -- 37 -- ns
Turn-Off Delay Time -- 110 200 ns
Fall Time -- 144 250 ns
Turn-On Switching Loss -- 310 -- uJ
= 300 V, IC = 20A,
V
CC
= 10Ω, V
R
G
GE
Inductive Load, T
= 15V,
= 125°C
C
Turn-Off Switching Loss -- 430 -- uJ
Total Gate Charge
Gate-Emitter Charge -- 20 30 nC
Gate-Collector Charge -- 25 40 nC
= 300 V, IC = 20A,
V
CE
V
GE
= 15V
-- 97 150 nC
Internal Emitter Inductance Measured 5mm from PKG -- 14 -- nH
©2001 Fairchild Semiconductor Corporation SGF40N60UF Rev. A
Page 3
SGF40N60UF
160
Common Emitter
℃
TC = 25
120
[A]
C
80
40
Collector Current, I
0
02468
20V
15V
12V
VGE = 10V
Collector - Emitter Voltage, VCE [V]
80
Common Emitter
V
= 15V
GE
70
T
= 25℃
C
T
= 125℃
C
60
[A]
C
50
40
30
Collector Current, I
20
10
0
0.5 1 10
Collector - Emitter Voltage, VCE [V]
Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage
[V]
CE
4
Common Emitter
V
= 15V
GE
3
2
40A
20A
Characteristics
30
25
20
15
VCC = 300V
Load Current : peak of square wave
IC = 10A
1
Collector - Emitter Voltage, V
0
0306090120150
Case Temperature, TC [℃]
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
20
16
[V]
CE
12
8
4
Collector - Emit t er Voltage, V
0
048121620
IC = 10A
40A
20A
Gate - Emitter Voltage, VGE [V]
Common Emitter
℃
T
= 25
C
10
Load Current [A]
5
Duty cycle : 50%
℃
= 100
T
C
Power Dissipation = 24W
0
0.1 1 10 100 1000
Frequency [KHz]
Fig 4. Load Current vs. Frequ ency
20
16
[V]
CE
12
8
4
Collector - Emitter Voltage, V
0
IC = 10A
0 4 8 12 16 20
20A
Gate - Emitter Voltage, VGE [V]
40A
Common Emitter
= 125
T
C
℃
Fig 5. Satur ation Voltage vs. V
©2001 Fairchild Semiconductor Corporation SGF40N60UF Rev. A
Fig 6. Saturation Voltage vs. VGE
GE
Page 4
SGF40N60UF
2500
2000
Cies
1500
1000
Capacitance [pF]
500
0
11030
Coes
Cres
Common Emitter
V
= 0V, f = 1MH z
GE
℃
T
= 25
C
300
100
Switching Time [ns]
Collector - Emitter Voltage, VCE [V]
Fig 7. Capaci tance Characterist i cs
Fig 8. Turn-On Characteristics vs.
Gate Resistance
1000
100
Switching Time [ns]
Common Emitter
V
= 300V, VGE = ±15V
CC
I
= 20A
C
T
= 25℃
C
T
= 125℃
C
Toff
Tf
Tf
2000
1000
Switching Loss [uJ]
100
Common Emitter
VCC = 300V, VGE = ±15V
IC = 20A
TC = 25℃
T
= 125℃
C
10
110100200
Ton
Tr
Gate Resistance, RG [Ω]
Common E mitter
V
= 300V, VGE = ±15V
CC
I
= 20A
C
T
= 25℃
C
T
= 125℃
C
Eon
Eoff
Eon
Eoff
20
110100200
Gate Resistance, RG [Ω]
Fig 9. Turn-Off Characteristics vs.
50
110100200
Gate Resistance, RG [Ω]
Fig 10. Switching Loss vs. Gate Resistance
Gate Resistance
200
100
Ton
Switching Time [ns]
Tr
10
10 15 20 25 30 35 40
Common Emitter
V
= 300V, VGE = ±15V
CC
Ω
R
= 10
G
TC = 25℃
T
= 125℃
C
Collector Curr ent, IC [A]
Fig 11. Turn-O n C haracteristics vs.
Collector Current
©2001 Fairchild Semiconductor Corporation SGF40N60UF Rev. A
1000
Commo n Em it te r
V
= 300V, VGE = ±15V
CC
Ω
R
= 10
G
TC = 25℃
= 125℃
T
C
Toff
Tf
Toff
100
Switching Time [nS]
Tf
20
10 15 20 25 30 35 40
Collector Current, IC [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
Page 5
SGF40N60UF
3000
1000
Eoff
Eon
100
Eoff
Eon
Switchi n g Loss [uJ]
10
10 15 20 25 30 35 40
Common Emitter
= 300V, VGE = ±15V
V
CC
Ω
R
= 10
G
TC = 25℃
= 125℃
T
C
Collector Current, IC [A]
Fig 13. Switching Loss vs. Collector Current
500
IC MAX. (Pulsed)
100
[A]
IC MAX. (Continuous)
C
10
DC Operation
Single Nonrepetitive
1
Collector Cu rrent, I
Pulse TC = 25
Curves must be derated
linearly w ith increase
in temper atur e
0.1
0.3 1 10 100 1000
℃
Collector-Emitter Voltage, VCE [V]
50us
100us
㎳
1
15
Common Emitter
Ω
RL = 15
℃
TC = 25
12
[ V ]
GE
9
300 V
6
3
VCC = 100 V
200 V
Gate - Emitter Voltage, V
0
0306090120
Gate Charge, Qg [ nC ]
Fig 14. Gate Charge Char ac te ri st i cs
500
100
[A]
C
10
1
Collector Current, I
Safe Operating Area
0.1
1 10 100 1000
VGE=20V, TC=100oC
Collector-Emitter Voltage, VCE [V]
Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics
1
0.5
0.2
0.1
0.1
0.05
0.02
Thermal Response [Zthjc]
0.01
0.01
single pulse
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
Zthjc + T
×
C
1E-5 1E-4 1E-3 0.01 0.1 1 10
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©2001 Fairchild Semiconductor Corporation SGF40N60UF Rev. A
Page 6
Package Dimension
SGF40N60UF
TO-3PF
5.50 ±0.20
26.50 ±0.20
4.50 ±0.20
14.50 ±0.20
16.50 ±0.20
2.00 ±0.20
2.00 ±0.20
4.00 ±0.20
2.00 ±0.20
15.50 ±0.20
ø3.60 ±0.20
2.50 ±0.20
2.00 ±0.20
10.00 ±0.20
0.85 ±0.03
16.50 ±0.20
3.00 ±0.20
(1.50)
10°
23.00 ±0.20
22.00 ±0.20
1.50 ±0.20
2.00 ±0.20
3.30
14.80 ±0.20
©2001 Fairchild Semiconductor Corporation SGF40N60UF Rev. A
0.75
5.45TYP
[5.45
±0.30]
3.30 ±0.20
+0.20
–0.10
2.00 ±0.20
5.45TYP
[5.45
±0.30]
5.50 ±0.20
0.90
±0.20
+0.20
–0.10
Dimensions in Millimeters
Page 7
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
2
CMOS™
E
EnSigna™
FACT™
FACT Quiet Series™
STAR*POWER is used under license
®
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
®
UltraFET
VCX™
®
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2001 Fairchild Semiconductor Corporation
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
Loading...