Datasheet SGF23N60UF Datasheet (Fairchild Semiconductor)

October 2001

SGF23N60UF

IGBT

SGF23N60UF

Ultra-Fast IGBT

General Description

Fairchild's Insulated Gate Bipolar Transistor(IGBT) UF
series provides low conduction and switching losses.
UF series is designed for the applications such as motor
control and general inverters where High Speed Switching
is required.

Application

AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls

G

C

E

Absolute Maximum Ratings T

Symbol Description SGF23N60UF Units

V

CES

V

GES

I

C

I

CM (1)

P

D

T

Operating Junction Temperature -55 to +150 °C

J

T

stg

T

L

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Collector-Emitter Voltage 600 V
Gate-Emitter Voltage ± 20 V
Collector Current @ TC = 25°C23 A
Collector Current @ T
Pulsed Collector Current 92 A
Maximum Power Dissipation @ TC = 25°C75 W
Maximum Power Dissipation @ T

Storage Temperature Range -55 to +150 °C
Maximum Lead Temp. for Soldering

Purposes, 1/8” from Case for 5 Seconds

TO-3PF

= 25°C unless otherwise noted

C

Features

• High Speed Switching

• Low Saturation Voltage : V

• High Input Impedance

C

C

G

G

E

E

= 100°C12 A

C

= 100°C30 W

C

300 °C

= 2.1 V @ IC = 12A

CE(sat)

Thermal Characteristics

Symbol Parameter Typ. Max. Units

R

θJC

R

θJA

©2001 Fairchild Semiconductor Corporation

Thermal Resistance, Junction-to-Case -- 1.6 °C/W
Thermal Resistance, Junction-to-Ambient -- 40 °C/W

SGF23N60UF Rev. A

SGF23N60UF

Electrical Characteristics of IGBT T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

∆B
∆T

I

CES

I

GES

CES

VCES
J

Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V

/

Temperature Coeff. of Breakdown
Voltage
Collector Cut-Off Current VCE = V
G-E Leakage Current VGE = V

V

= 0V, IC = 1mA -- 0.6 -- V/°C

GE

, VGE = 0V -- -- 250 uA

CES

, VCE = 0V -- -- ± 100 nA

GES

On Characteristics

V

GE(th)

V

CE(sat)

G-E Threshold Voltage IC = 12mA, VCE = V

,

Collector to Emitter
Saturation Voltage

I
I

= 12A

C

= 23A

C

VGE = 15V

,

VGE = 15V

GE

3.5 4.5 6.5 V

-- 2.1 2.6 V

-- 2.6 -- V

Dynamic Characteristics

C

ies

C

oes

C

res

Input Capacitance
Output Capacitance -- 100 -- pF
Reverse Transfer Capacitance -- 25 -- pF

= 30V, VGE = 0V,

V

CE

f = 1MHz

-- 720 -- pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

Total Switching Loss -- 250 400 uJ

ts

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

Total Switching Loss -- 525 800 uJ

E

ts

Q

g

Q

ge

Q

gc

L

e

Turn-On Delay Time

-- 17 -- ns
Rise Time -- 27 -- ns
Turn-Off Delay Time -- 60 130 ns
Fall Time -- 70 150 ns
Turn-On Switching Loss -- 115 -- uJ

V

= 300 V, IC = 12A,

CC

R

= 23Ω, V

G

GE

Inductive Load, T

= 15V,

= 25°C

C

Turn-Off Switching Loss -- 13 5 -- uJ

Turn-On Delay Time

-- 23 -- ns
Rise Time -- 32 -- ns
Turn-Off Delay Time -- 100 200 ns
Fall Time -- 220 250 ns
Turn-On Switching Loss -- 205 -- uJ

= 300 V, IC = 12A,

V

CC

= 23Ω, V

R

G

GE

Inductive Load, T

= 15V,

= 125°C

C

Turn-Off Switching Loss -- 320 -- uJ

Total Gate Charge
Gate-Emitter Charge -- 11 17 nC
Gate-Collector Charge -- 14 22 nC

= 300 V, IC = 12A,

V

CE

V

GE

= 15V

-- 49 80 nC

Internal Emitter Inductance Measured 5mm from PKG -- 14 -- nH

©2001 Fairchild Semiconductor Corporation SGF23N60UF Rev. A

SGF23N60UF

100

Common Emitter

℃

TC = 25

80

[A]

C

60

40

Collector Cu rrent, I

20

0

02468

20V

15V

12V

VGE = 10V

Collector - Emitter Voltage, VCE [V]

50

Common Emitter
V

= 15V

GE

T

= 25℃

C

40

T

= 125℃

C

[A]

C

30

20

Collector Current, I

10

0

0.5 1 10

Collector - Emitter Voltage, VCE [V]

Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage

[V]

CE

4

Common Emitter
V

= 15V

GE

3

2

24A

12A

Characteristics

18

15

12

9

VCC = 300V
Load Current : peak of square wave

IC = 6A

1

Collector - Emitter Voltage, V

0

0306090120150

Case Temperature, TC [℃]

Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level

20

16

[V]

CE

12

8

4

Collector - Emitter Voltage, V

0

048121620

IC = 6A

12A

24A

Gate - Emitter Voltage, VGE [V]

Common Emitter

℃

T

= 25

C

6

Load Current [A]

3

Duty cycle : 50%

℃

= 100

T

C

Power Dissipation = 16W

0

0.1 1 10 100 1000

Frequency [KHz]

Fig 4. Load Current vs. Frequ ency

20

16

[V]

CE

12

8

4

Collector - Emitter Voltage, V

0

IC = 6A

0 4 8 12 16 20

12A

Gate - Emitter Voltage, VGE [V]

24A

Common E mitter
T

= 125

C

℃

Fig 5. Satur ation Voltage vs. V

©2001 Fairchild Semiconductor Corporation SGF23N60UF Rev. A

Fig 6. Saturation Voltage vs. VGE

GE

SGF23N60UF

1200

1000

800

600

Capacitance [pF]

400

Cies

Coes

Common Emitter
V

= 0V, f = 1MHz

GE

℃

T

= 25

C

200

100

Switching Time [ns]

200

0

11030

Cres

Collector - Emitter Voltage, VCE [V]

Fig 7. Capaci tance Chara cteristi cs

Fig 8. Turn-On Characteristics vs.
Gate Resistance

1000

Common Emitter
V

= 300V, VGE = ±15V

CC

I

= 12A

C

T

= 25℃

C

T

= 125℃

C

Toff

Tf

Toff

Switching Time [ns]

100

Tf

50

110100200

Gate Resistance, RG [Ω]

1000

100

Switching Loss [uJ]

Common Emitter
VCC = 300V, VGE = ±15V
IC = 12A
TC = 25℃

= 125℃

T

C

10

110100200

Ton

Tr

Gate Resistance, RG [Ω]

Eoff
Eon

Eon

Eoff

Common E mitter
V

= 300V, VGE = ±15V

CC

I

= 12A

C

T

= 25℃

C

T

= 125℃

30

110100200

C

Gate Resistance, RG [Ω]

Fig 9. Turn-Off Characteristics vs.

Fig 10. Switching Loss vs. Gate Resistance

Gate Resistance

200

Common Emitter
V

= 300V, VGE = ±15V

CC

R

= 23

Ω

G

100

TC = 25℃
T

= 125℃

C

Ton

Switchin g T ime [ns]

Tr

10

4 8 12 16 20 24

Collector Current, IC [A]

Fig 11. Turn-On Characteristics vs.
Collector Current

©2001 Fairchild Semiconductor Corporation SGF23N60UF Rev. A

1000

Common Emitter
V

= 300V, VGE = ±15V

CC

R

= 23

Ω

G

TC = 25℃
T

= 125℃

C

Toff

Switching Time [ns]

100

Tf

50

4 8 12 16 20 24

Collector Current, IC [A]

Fig 12. Turn-Off Characteristics vs.
Collector Current

Tf

Toff

SGF23N60UF

1000

Eoff

100

Eon

Switchin g Loss [uJ]

Eon
Eoff

10

4 8 12 16 20 24

Common Emitter
V

= 300V, VGE = ±15V

CC

Ω

R

= 23

G

TC = 25℃
T

= 125℃

C

Collector Current, IC [A]

Fig 13. Switching Loss vs. Collector Current

300

IC MAX. (Pulsed)

100

[A]

C

10

IC MAX. (Continuous)

50us

100us

㎳

1

15

Common Emitter

Ω

RL = 25

℃

TC = 25

12

[ V ]

GE

9

300 V

6

VCC = 100 V

3

200 V

Gate - Emitte r Vo ltage, V

0

0 1020304050

Gate Charge, Qg [ nC ]

Fig 14. Gate Charge Characteristics

200
100

[A]

C

10

DC Operation

Single Nonrepetitive

1

Collector Curren t, I

Pulse TC = 25
Curves must be derated
linearly with increase
in temperature

0.1

0.3 1 10 100 1000

℃

Collector-Emitter Voltage, VCE [V]

1

Collector Current, I

Safe Operating Area

0.1
1 10 100 1000

VGE = 20V, TC = 100

℃

Collector-Emitter Voltage, VCE [V]

Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics

10

1

0.5

0.2

0.1

0.05

0.1

Thermal Response [Zthjc]

0.02

0.01

0.01

single pulse

1E-5 1E-4 1E-3 0.01 0.1 1 10

Rectangular Pulse Duration [sec]

Pdm

t1

t2

Duty factor D = t1 / t2
Peak Tj = Pdm

Zthjc + T

×

C

Fig 17. Transient Thermal Impedance of IGBT

©2001 Fairchild Semiconductor Corporation SGF23N60UF Rev. A

Package Dimension

SGF23N60UF

TO-3PF

5.50 ±0.20

26.50 ±0.20

4.50 ±0.20

14.50 ±0.20

16.50 ±0.20

2.00 ±0.20

2.00 ±0.20

4.00 ±0.20

2.00 ±0.20

15.50 ±0.20

ø3.60 ±0.20

2.50 ±0.20

2.00 ±0.20

10.00 ±0.20

0.85 ±0.03

16.50 ±0.20

3.00 ±0.20
(1.50)

10°

23.00 ±0.20

22.00 ±0.20

1.50 ±0.20

2.00 ±0.20

3.30

14.80 ±0.20

©2001 Fairchild Semiconductor Corporation SGF23N60UF Rev. A

0.75

5.45TYP

[5.45

±0.30]

3.30 ±0.20

+0.20
–0.10

2.00 ±0.20

5.45TYP

[5.45

±0.30]

5.50 ±0.20

0.90

±0.20

+0.20
–0.10

Dimensions in Millimeters

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2

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E
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®

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®

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®

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®

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when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

Preliminary First Production This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Obsolete Not In Production This datasheet contains specifications on a product

©2001 Fairchild Semiconductor Corporation

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H4