Page 1
Philips Semiconductors Linear Products Product specification
NE/SE566Function generator
398
April 15, 1992 853-0910 06454
DESCRIPTION
The NE/SE566 Function Generator is a voltage-controlled oscillator
of exceptional linearity with buffered square wave and triangle wave
outputs. The frequency of oscillation is determined by an external
resistor and capacitor and the voltage applied to the control terminal.
The oscillator can be programmed over a ten-to-one frequency
range by proper selection of an external resistance and modulated
over a ten-to-one range by the control voltage, with exceptional
linearity.
FEATURES
•Wide range of operating voltage (up to 24V; single or dual)
•High linearity of modulation
•Highly stable center frequency (200ppm/°C typical)
•Highly linear triangle wave output
•Frequency programming by means of a resistor or capacitor,
voltage or current
•Frequency adjustable over 10-to-1 range with same capacitor
PIN CONFIGURATIONS
D, N Packages
1
2
3
4 5
6
7
8
GROUND
NC
SQUARE WAVE OUTPUT
TRIANGLE WAVE OUTPUT
V+
MODULATION INPUT
C
1
R
1
TOP VIEW
APPLICATIONS
•Tone generators
•Frequency shift keying
•FM modulators
•Clock generators
•Signal generators
•Function generators
ORDERING INFORMATION
DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #
8-Pin Plastic Small Outline (SO) Package 0 to +70°C NE566D 0174C
14-Pin Ceramic Dual In-Line Package (CERDIP) 0 to +70°C NE566F 0581B
8-Pin Plastic Dual In-Line Package (DIP) 0 to +70°C NE566N 0404B
8-Pin Plastic Dual In-Line Package (DIP) -55°C to +125°C SE566N 0404B
BLOCK DIAGRAM
V
C
MODULATION
INPUT
R
1
V+
6 8
5
7
C
1
SCHMITT
TRIGGER
BUFFER
AMPLIFIER
BUFFER
AMPLIFIER
3
4
CURRENT
SOURCES
Page 2
Philips Semiconductors Linear Products Product specification
NE/SE566Function generator
April 15, 1992
399
EQUIVALENT SCHEMATIC
5
V
C
R
1
(EXTERNAL)
7
C
1
(EXTER–
NAL)
4
3
5kΩ
8
V+
1
GROUND
6
ABSOLUTE MAXIMUM RATINGS
SYMBOL PARAMETER RATING UNIT
V+ Maximum operating voltage 26 V
VIN, V
C
Input voltage 3 V
P-P
T
STG
Storage temperature range -65 to +150 °C
T
A
Operating ambient temperature range
NE566 0 to +70 °C
SE566 -55 to +125 °C
P
D
Power dissipation 300 mW
Page 3
Philips Semiconductors Linear Products Product specification
NE/SE566Function generator
April 15, 1992
400
DC ELECTRICAL CHARACTERISTICS
TA=25°C, VCC=±6V, unless otherwise specified.
SE566 NE566
SYMBOL
PARAMETER
Min Typ Max Min Typ Max
UNIT
General
T
A
Operating ambient temperature range -55 125 0 70 °C
V
CC
Operating supply voltage ±6 ±12 ±6 ±12 V
I
CC
Operating supply current 7 12.5 7 12.5 mA
VCO
1
f
MAX
Maximum operating frequency 1 1 MHz
Frequency drift with temperature 500 600 ppm/°C
Frequency drift with supply voltage 0.1 1 0.2 2 %/V
Control terminal input impedance
2
1 1 MΩ
FM distortion (±10% deviation) 0.2 0.75 0.4 1.5 %
Maximum sweep rate 1 1 MHz
Sweep range 10:1 10:1
Output
Triangle wave output
impedance 50 50 Ω
voltage 1.9 2.4 1.9 2.4 V
P-P
linearity 0.2 0.5 %
Square wave input
impedance 50 50 Ω
voltage 5 5.4 5 5.4 V
P-P
duty Cycle 45 50 55 40 50 60 %
t
R
Rise time 20 20 ns
t
F
Fall Time 50 50 ns
NOTES:
1. The external resistance for frequency adjustment (R
1
) must have a value between 2kΩ and 20kΩ.
2. The bias voltage (VC) applied to the control terminal (Pin 5) should be in the range V+≤VC≤V+.
Page 4
Philips Semiconductors Linear Products Product specification
NE/SE566Function generator
April 15, 1992
401
TYPICAL PERFORMANCE CHARACTERISTICS
Normalized Frequency as a
Function of Control Voltage
Normalized Frequency as a
Function of Resistance (R1)
Change in Frequency as a
Function of Temperature
Power Supply Current as a
Function of Supply Voltage
Frequency as a Function
of Capacitance (C1)
VCO Output Waveforms
2.5
2.0
1.5
1.0
0.5
0 0.5 1.0 1.5 2.0 2.5 3.0
CONTROL VOLTAGE
(BETWEEN PIN 8 AND PIN 5) — VOLTS
NORMALIZED FREQUENCY
V+ = 12 VOLTS
100
50
20
10
5
2
1
0.1 0.2 0.5 1 2 5 10
V+ = 12 VOLTS
V
C
= 10 VOLTS
NORMALIZED FREQUENCY
RESISTANCE (R ) — (K )
1
Ω
+2.5
+2.0
+1.5
+1.0
+0.5
0
–0.5
–1.0
–1.5
–2.0
–2.5
–75 –50 –25 0 +25 +50 +75+100 +125
TEMPERATURE — (
o
C)
CHANGE IN FREQUENCY — (%)
V+ = 12 VOLTS
V
C
= 10 VOLTS
TYPICAL
20.0
17.5
15.0
12.5
10.0
7.5
5
10 13 16 19 22 25
SUPPLY VOLTAGE — V
SUPPLY CURRENT — mA
Rt = 4kΩ
MAXIMUM
TYPICAL
V+ = 12 VOLTS
V
C
= 10 VOLTS
R
1
= 4k
10
1.0
0.1
0.01
0.001
0.0001
1 10
10
2103104105106
FREQUENCY — Hz
CAPACITANCE (C ) — F
1 µ
6
5
4
12
10
8
6
4
V+ = 12 VOLTS
OUTPUT 3 — V OUTPUT PIN 4 — V
OPERATING INSTRUCTIONS
The NE/SE566 Function Generator is a general purpose
voltage-controlled oscillator designed for highly linear frequency
modulation. The circuit provides simultaneous square wave and
triangle wave outputs at frequencies up to 1MHz. A typical
connection diagram is shown in Figure 1. The control terminal (Pin
5) must be biased externally with a voltage (V
C
) in the range
V+≤V
C
≤V+
where V
CC
is the total supply voltage. In Figure 1, the control
voltage is set by the voltage divider formed with R
2
and R3. The
modulating signal is then AC coupled with the capacitor C
2
. The
modulating signal can be direct coupled as well, if the appropriate
DC bias voltage is applied to the control terminal. The frequency is
given approximately by
f
O
2 [(V ) (V
C
)]
R
1C1
V
and R1 should be in the range 2kΩ< R1<20kΩ.
A small capacitor (typically 0.001µF) should be connected between
Pins 5 and 6 to eliminate possible oscillation in the control current
source.
If the VCO is to be used to drive standard logic circuitry, it may be
desirable to use a dual supply as shown in Figure 2. In this case the
square wave output has the proper DC levels for logic circuitry. RTL
can be driven directly from Pin 3. For DTL or TTL gates, which
require a current sink of more than 1mA, it is usually necessary to
connect a 5kΩ resistor between Pin 3 and negative supply . This
increases the current sinking capability to 2mA. The third type of
Page 5
Philips Semiconductors Linear Products Product specification
NE/SE566Function generator
April 15, 1992
402
interface shown uses a saturated transistor between the 566 and
the logic circuitry. This scheme is used primarily for TTL circuitry
which requires a fast fall time (<50ns) and a large current sinking
capability.
R
3
10K
Figure 1.
R
2
1.5K
.001
µ
F
C
2
V
C
R
1
6 8
5
SE/NE 566
4
3
17
C
1
V
+
Figure 2.
1.5K
.001µF
10K
V
C
R
1
6 8
5
SE/NE 566
3
4
17
C
1
RTL
10K
DTL
&
T
2
L
DTL OR T
2
L
WITH FAST
FALL TIME
5K
5K
–6 VOLTS
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