Datasheet ne521, se521 DATASHEETS (Philips)

Philips Semiconductors Linear Products Product specification

NE/SE521High-speed dual-differential comparator/sense amp

305

August 31, 1994 853-0900 13721

FEATURES

•12ns maximum guaranteed propagation delay

•20µA maximum input bias current

•TTL compatible strobes and outputs

•Large common-mode input voltage range

•Operates from standard supply voltages

•Military qualifications pending

APPLICATIONS

•MOS memory sense amp

•A-to-D conversion

•High-speed line receiver

PIN CONFIGURATION

1

2

3

4

5

6

7 8

14

13

12

11

10

9

D, F, N Packages

INPUT 1A

INPUT 1B

NC

OUTPUT 1Y

STROBE 1G

STROBE S

GND

V+

V–

INPUT 2A

INPUT 2B

NC

OUTPUT 2Y

STROBE 2G

TOP VIEW

ORDERING INFORMATION

DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #

14-Pin Plastic Dual In-Line Package (DIP) 0 to +70°C NE521N 0405B 14-Pin SO Package 0 to +70°C NE521D 0175D 14-Pin Ceramic Dual In-Line Package (CERDIP) 0 to +70°C NE521F 0581B 14-Pin Ceramic Dual In-Line Package (CERDIP) -55°C to +125°C SE521F 0581B

EQUIVALENT SCHEMATIC

Q11

V+

14

2

–

+

1

V–

13

R2 R1

Q2 Q1

Q4

Q3

D7

Q9

R4

Q10 Q8

R5 R3

D6

R17

Q6

R16

Q5

Q13

R15 R6

R9

Q19

Q7

R14

5

D2

Q25

R20

6

R21

Q26

Q30

R24

R23

Q27

Q29

Q28

R25

7

12

+

–

11

V+

R8

Q16

Q15 Q14

R12 R11

Q18

R10

Q17

D4

Q20

Q21

R7

D5

Q22 Q23

R18

R19

D3

8

Q24

Q31

R26

Q32

R27

R28

Q36

R29

R30

Q32

Q35

9

Q34

R34

R22

4

Philips Semiconductors Linear Products Product specification

NE/SE521High-speed dual-differential comparator/sense amp

August 31, 1994

306

LOGIC FUNCTIONS

V

ID

A+, B

–

STROBE S STROBE G OUTPUT (Y)

VID≤-V

OS

H H L

-VOS<VID<V

OS

H H Undefined

VID≥V

OS

H H H X L X H X X L H

ABSOLUTE MAXIMUM RATINGS

SYMBOL PARAMETER RATING UNIT

Supply voltage V+ Positive +7 V V- Negative -7 V V

IDR

Differential input voltage ±6 V V

IN

Input voltage

Common mode ±5 V Strobe/gate +5.25 V

P

D

Maximum power dissipation

1

TA= 25°C (still-air)

F package 1190 mW N package 1420 mW D package 1040 mW

T

A

Operating temperature range

NE521 0 to 70 °C SE521 -55 to +125 °C

T

STG

Storage temperature range -65 to +150 °C T

SOLD

Lead soldering temperature (10 sec. max) +300 °C

NOTES:

1. Derate above 25°C at the following rates: F package at 9.5mW/°C N package at 11.4mW/°C D package at 8.3mW/°C

BLOCK DIAGRAM

(12)

INPUT 2A

(11)

INPUT 2B

(9)

OUTPUT 3Y

(8)

STROBE 2G

(1)

(2)

(4)

(5)

INPUT 1A

INPUT 1B

OUTPUT 1Y

STROBE 1G

(60

STROBE S

Philips Semiconductors Linear Products Product specification

NE/SE521High-speed dual-differential comparator/sense amp

August 31, 1994

307

DC ELECTRICAL CHARACTERISTICS (SE521)

V+=+5V, V-=-5V, TA=-55°C to +125°C, unless otherwise specified.

LIMITS

SYMBOL

PARAMETER

TEST CONDITIONS

Min Typ Max

UNIT

V

OS

Input offset voltage V+=+4.5V, V-=-4.5V

At 25°C 6 7.5 mV Over temperature range 15

I

BIAS

Input bias current V+=+5.5V, V-=-5.5V

At 25°C 7.5 20 µA Over temperature range 40

I

OS

Input offset current V+=+5.5V, V-=-5.5V

At 25°C 1.0 5 µA Over temperature range 12

V

CM

Common-mode voltage range V+=+4.5V, V-=-4.5V –3 +3 V

V

IL

Low level input voltage

At 25°C 0.8 V Over temperature 0.7

V

IH

High level input voltage 2.0 V Input current V+=+5.5V, V-=-5.5V

I

IH

High VIH=2.7V

1G or 2G strobe 50 µA

Common strobe S 100 µA

Input Current

I

IL

Low VIL=0.5V

1G or 2G strobe -2.0 mA

Common strobe S -4.0 mA

Output voltage V

I(S)

=2.0V

V

OH

High V+=+4.5V, V-=-4.5V, I

LOAD

=-1mA 2.5 3.4

V

OL

Low V+=+4.5V, V-=-4.5V, I

LOAD

=10mA 0.5

TA=25°C, I

LOAD

=20mA 0.5

Supply voltage V+ Positive 4.5 5.0 5.5 V V- Negative -4.5 -5.0 -5.5

Supply current V+=5.5V, V-=-5.5V, TA=25°C I

CC+

Positive 27 35 mA

I

CC-

Negative -15 -28

I

SC

Short-circuit output current -35 -115 mA

Philips Semiconductors Linear Products Product specification

NE/SE521High-speed dual-differential comparator/sense amp

August 31, 1994

308

DC ELECTRICAL CHARACTERISTICS(NE521)

V+=+5V, V-=-5V, TA=0 to 70°C, unless otherwise specified.

LIMITS

SYMBOL

PARAMETER

TEST CONDITIONS

Min Typ Max

UNIT

V

OS

Input offset voltage V+=+4.75V, V-=-4.75V

At 25°C 6 7.5 mV Over temperature range 10

I

BIAS

Input bias current V+=+5.25V, V-=-5.25V

At 25°C 7.5 20 µA Over temperature range 40

I

OS

Input offset current V+=+5.25V, V-=-5.25V

At 25°C 1.0 5 µA Over temperature range 12

V

CM

Common-mode voltage range V+=+4.75V, V-=-4.75V –3 +3 V

Input current V+=+5.25V, V-=-5.25V I

IH

High VIH=2.7V

1G or 2G strobe 50 µA

Common strobe S 100 µA

Input Current I

IL

Low VIL=0.5V

1G or 2G strobe -2.0 mA

Common strobe S -4.0 mA

Output voltage V

I(S)

=2.0V

V

OH

High V+=+4.75V, V-=-4.75V, I

LOAD

=-1mA 2.7 3.4 V

V

OL

Low V+=+5.25V, V-=-5.25V, I

LOAD

=20mA 0.5

Supply voltage V+ Positive 4.75 5.0 5.25 V V- Negative -4.75 -5.0 -5.25

Supply current V+=5.25V, V-=-5.25V, TA=25°C I

CC+

Positive 27 35 mA

I

CC-

Negative -15 -28

I

SC

Short-circuit output current -40 -100 mA

AC ELECTRICAL CHARACTERISTICS

TA=25°C, RL=280W CL=15pF V+=5V V-=5V.

LIMITS

SYMBOL

PARAMETER

FROM INPUT

TO OUTPUT

Min Typ Max

UNIT

Large-signal switching speed

Propagation delay t

PLH(D)

Low to high

1

Amp Output 8 12

t

PHL(D)

High to low

1

Amp Output 6 9 ns

t

PLH(S)

Low to high

2

Strobe Output 4.5 10

t

PHL(S)

High to low

2

Strobe Output 3.0 6

f

MAX

Max. operating frequency 40 55 MHz

NOTES:

1. Response time measured from 0V point of ±100mV

P-P

10MHz square wave to the 1.5V point of the output.

2. Response time measured from 1.5V point of input to 1.5V point of the output.

Philips Semiconductors Linear Products Product specification

NE/SE521High-speed dual-differential comparator/sense amp

August 31, 1994

309

TYPICAL PERFORMANCE CHARACTERISTICS

20mV

5mV

10mV

Response Time for Various

Input Overdrives

Response Time for Various

Input Overdrives

Response Time vs Temperature

Propagation Delay for

Various Input Voltages

Propagation Delay for

Various Input Voltages

Output Voltage vs

Ambient Temperature

Input Bias Current vs Ambient Temperature

Input Offset Current vs

Ambient Temperature

4 3

2 1 0

100

50

0

0 5 10 15 20 25 30

VS = +5V T

A

= 25oC

100mV

TIME — nS

INPUT VOLTAGE (mV) OUTPUT VOLTAGE (V)

TA = 25oC V

S

= +5V

5mV 10mV100mV

50mV

0 5 10 15 20 25 30

TIME — nS

INPUT VOLTAGE (mV) OUTPUT VOLTAGE (V)

4 3

2 1 0

100

50

0

12

10

8

6

4

2

60 20 –20 +60 +100 +140

TPD (LH)

TPD (HL)

AMBIENT TEMPERATURE (

o

C)

TESPONSE TIME (ns)

INPUT VOLTAGE (mVp–p)

PROPAGATION DELAY (ns)

VS = +5V 10MHz SQUARE WAVE INPUT

T

A

= 25oC

TPD (LH)

TPD (HL)

10 20 30 40 50 60 70

12

10

8

6

20

18 16

14 12

10

8

6 4

2

100

1000

INPUT VOLTAGE (m Vp–p)

PROPAGATION DELAY (ns)

VS = +5V 10MHz SQUARE WAVE INPUT

T

A

= 25oC

TPD (LH)

TPD (HL)

4.0

3.0

2.0

1.0

–75

–25

+25

+75 +125

V

OL

V

OH

AMBIENT TEMPERATURE (

o

C)

OUTPUT VOLTAGE (V)

–75 –25 +25 +75 +125

AMBIENT TEMPERATURE (oC)

12

11

10

9

8

7

6

INPT BIAS CURRENT ( A)

µ

1.1

1.0

0.9

0.8

0.7

0.6

0.5

–75 –25 +25 +75 +125

AMBIENT TEMPERATURES (

o

C)

INPUT OFSET CURRENT ( A)

µ