Datasheet SC4040ASKTR, SC4040ASTR, SC4040AZTA, SC4040AZTR, SC4040BSKTR Datasheet (Semtech Corporation)

...
Page 1
© 1998 SEMTECH CORP.
652 MITCHELL ROAD NEWBURY PARK CA 91320
PRECISION SHUNT VOLTAGE REFERENCE
SC4040
PRELIMINARY - April 13, 1998
1
FEATURES
Available with five voltage tolerances (0.1%, 0.2%,
0.5%, 1.0% and 2.0%) and three package outlines (SOT-23, SO-8 and TO-92), this part allows the designer the opportunity to select the optimum combination of cost and performance for their application.
APPLICATIONS
Trimmed bandgap design (0.2%)
Wide operating current range 60µA to 20mA
Low dynamic impedance (0.25Ω)
Available in SOT-23, TO-92 and SO-8
Cellular telephones
Portable computers
Instrumentation
Automotive
BLOCK DIAGRAM
SYMBOL DIAGRAM
PIN CONFIGURATIONS
SOT-23-3 Lead (Top View)
SO-8 Lead (Top View)
TO-92 (Top View)
Cathode
Anode
Cathode
Anode
DESCRIPTION
TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com
Page 2
© 1998 SEMTECH CORP.
652 MITCHELL ROAD NEWBURY PARK CA 91320
PRECISION SHUNT VOLTAGE REFERENCE
SC4040
PRELIMINARY - April 13, 1998
2
Parameter Symbol Maximum Units
Reverse Current 60 µA to 20 mA Operating Temperature Range T
A
-40 to +85 °C
Operating Junction Temperature Range T
J
-40 to +150 °C
Storage Temperature Range T
STG
-65 to +150 °C
Lead Temperature (Soldering) 10 seconds
T
LEAD
260 °C
ESD Rating ESD 2 kV
ABSOLUTE MAXIMUM RATINGS
PACKAGE TOLERANCE T/R Quantity
0.1% 0.2% 0.5% 1.0% 2.0%
SOT-23-3L
(1)
SC4040ASK SC4040BSK SC4040CSK SC4040DSK SC4040ESK 3K
SO-8
(1)
SC4040AS SC4040BS SC4040CS SC4040DS SC4040ES 2.5K
TO-92
(1)(2)
SC4040AZ SC4040BZ SC4040CZ SC4040DZ SC4040EZ TR=3K, TA=2K
Notes: (1) Add suffix ‘TR’ for Tape & Reel. (2) Add suffix ‘TA’ for Tape Ammo.
ORDERING INFORMATION
Page 3
© 1998 SEMTECH CORP.
652 MITCHELL ROAD NEWBURY PARK CA 91320
PRECISION SHUNT VOLTAGE REFERENCE
SC4040
PRELIMINARY - April 13, 1998
3
ELECTRICAL CHARACTERISTICS
TA = 25°C unless otherwise specifi ed.
SC4040A (0.1%) SC4040B (0.2%)
Parameter Symbol Condition MIN TYP MAX MIN TYP MAX UNITS
Reverse Breakdown Volt­age
V
ZIZ
= 100µA TA = 25°C 2.4975 2.5000 2.5025 2.495 2.500 2.505 V
TA = -40 to +85°C 2.481 2.500 2.519 2.479 2.500 2.521 V
Minimum Operating Cur­rent
I
Z(min)
60 80 60 80 µA
Reverse Breakdown Volt­age Temperature Coeffi­cient
I
Z
= 10mA
I
Z
= 1mA
I
Z
= 100µA
T
A
= -40 to +85°C ±100 ±100 ppm/°C
Ratio of Change in VZ to Change in I
Z
I
Z(min)
< IZ < 1mA TA = 25°C 0.8 0.8 mV
T
A
= -40 to +85°C 1.0 1.0 m V
1mA <
IZ < 12mA TA = 25°C 6.0 6.0 mV
T
A
= -40 to +85°C 8.0 8.0 m V
Reverse Dynamic Impedance
Z
RIZ
= 1mA, f = 120 Hz, IAC = 0.1 I
Z
0.25 0.8 0.25 0.8
Wideband Noise (RMS) e
NIZ
= 100µA
10Hz <
f < 10kHz
35 35 µV
Long Term Stability of Re­verse Breakdown Voltage
t = 1000 hours T = 25°C ± 0.1°C I
Z
= 100µA
120 120 ppm
T
V
Z
Z
Z
I
V
Z
V
TA = 25°C unless otherwise specifi ed.
SC4040C (0.5%) SC4040D (1.0%)
Parameter Symbol Condition MIN TYP MAX MIN TYP MAX UNITS
Reverse Breakdown Volt­age
V
ZIZ
= 100µA TA = 25°C 2.488 2.500 2.512 2.475 2.500 2.525 V
T
A
= -40 to +85°C 2. 471 2.500 2.529 2.451 2.500 2.549 V
Minimum Operating Current I
Z(min)
60 80 60 80 µA
Reverse Breakdown Volt­age Temperature Coeffi­cient
I
Z
= 10mA
I
Z
= 1mA
I
Z
= 100µA
T
A
= -40 to +85°C ± 100 ±150 ppm/°C
Ratio of Change in VZ to Change in I
Z
I
Z(min)
< IZ < 1mA TA = 25°C 0.8 1.0 mV
T
A
= -40 to +85°C 1.0 1.2 mV
1mA <
IZ < 12mA TA = 25°C 6.0 8.0 mV
T
A
= -40 to +85°C 8.0 10.0 mV
Reverse Dynamic Impedance
Z
RIZ
= 1mA, f = 120 Hz, IAC = 0.1 I
Z
0.25 0.9 0.25 1.1
Wideband Noise (RMS) e
NIZ
= 100µA
10Hz <
f < 10kHz
20 35 µV
Long Term Stability of Re­verse Breakdown Voltage
t = 1000 hours T = 25°C ± 0.1°C I
Z
= 100µA
120 120 ppm
T
V
Z
Z
Z
I
V
Z
V
Page 4
© 1998 SEMTECH CORP.
652 MITCHELL ROAD NEWBURY PARK CA 91320
PRECISION SHUNT VOLTAGE REFERENCE
SC4040
PRELIMINARY - April 13, 1998
4
ELECTRICAL CHARACTERISTICS
TA = 25°C unless otherwise specifi ed.
SC4040E (2.0%)
Parameter Symbol Condition MIN TYP MAX UNITS
Reverse Breakdown Voltage V
ZIZ
= 100µA TA = 25°C 2.450 2.500 2.550 V
T
A
= -40 to +85°C 2.426 2.500 2.574 V
Minimum Operating Current I
Z(min)
60 80 µA
Reverse Breakdown Voltage Temperature Coeff i cient I
Z
= 10mA
I
Z
= 1mA
I
Z
= 100µA
T
A
= -40 to +85°C ±150 ppm/°C
Ratio of Change in V
Z
to Change in I
Z
I
Z(min)
< IZ < 1mA TA = 25°C 1.0 mV
TA = -40 to +85°C 1. 2 mV
1mA <
IZ < 12mA TA = 25°C 8.0 mV
T
A
= -40 to +85°C 10.0 mV
Reverse Dynamic Im pedance Z
RIZ
= 1mA, f = 120 Hz, IAC = 0.1 I
Z
0.25 1.1
Wideband Noise (RMS) e
NIZ
= 100µA
10Hz <
f < 10kHz
35 µV
Long Term Stability of Reverse Breakdown Voltage t = 1000 hours
T = 25°C ± 0.1°C I
Z
= 100µA
120 ppm
T
V
Z
Z
Z
I
V
Z
V
Page 5
© 1998 SEMTECH CORP.
652 MITCHELL ROAD NEWBURY PARK CA 91320
PRECISION SHUNT VOLTAGE REFERENCE
SC4040
PRELIMINARY - April 13, 1998
5
LAND PATTERN SOT-23
Note 1 : Grid placement courtyard is 8 x 8 elements (4mm x 4mm) in accordance with the international grid detailed in IEC Publication 97.
OUTLINE DRAWING SOT-23
Page 6
© 1998 SEMTECH CORP.
652 MITCHELL ROAD NEWBURY PARK CA 91320
PRECISION SHUNT VOLTAGE REFERENCE
SC4040
PRELIMINARY - April 13, 1998
6
OUTLINE DRAWING TO-92
OUTLINE DRAWING SO-8
LAND PATTERN SO-8
Loading...