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Micro-Electro-Magnetical Tech Co.
(2)Both of top-side and back-side metals are Ti/Ni/Ag.
SCHOTTKY DIE SPECIFICATION TYPE: SB260
General Description:
60 V 2 A Standard VF Single Anode
ELECTRICAL CHARACTERISTICS Spec. Limit
DC Blocking Voltage: Ir=1mA(for wafer form) VRRM 63 Volt
SYM Die Sort UNIT
60
Ir=0.5mA (for dice form)
Average Rectified Forward Current 2
IFAV Amp
Maximum Instantaneous Forward Voltage
@ 2 Amperes, Ta=25°C 0.7
VF MAX 0.635 Volt
Maximum Instantaneous Reverse Voltage
VR= 60 Volt, Ta=25°C 0.5
Maximum Junction Capacitance @ 0V, 1MHZ
IR MAX 0.09 mA
Cj MAX pF
MAXIMUM RATINGS
Nonrepetitive Peak Surge Current 60
Operating Junction Temperature -65 to +150
Storage Temperatures -65 to +150
IFSM Amp
Tj °C
TSTG °C
Specification apply to die only. Actual performance may degrade when assembled.
MEMT does not guarantee device performance after assembly.
Data sheet information is subjected to change without notice.
DICE OUTLINE DRAWING
DIM um
A 1245 49.01
B 1025 40.3
A
C
C 1203 47.3
D 254 10
Die Size
Top Metal Pad Size
Passivation Seal
Thickness (Min)
ITEM
Thickness (Max)
B
Top-side Metal
SiO2 Passivation
D
P+ Guard Ring
Back-side Metal
PS:
(1)Cutting street width is around 80um(3.14mil).
2
305 12
Mil
2
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