Datasheet SB29003 Datasheet (Fairchild)

Page 1
查询SB29003供应商
SB29003
High Voltage Transistor
1
SOT-223
Marking: 5463003
1.Base 2.Collector 3.Emitter
SB29003 High Voltage Transistor
Absolute Maximum Ratings
Ta = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Electrical Characteristics
Collector-Base Voltage 500 V Collector-Emitter Voltage 400 V Emitter-Base Voltage 6 V Collector Current 300 mA Collector Dissipation (TC = 25°C) 2 W Junction Temperature 150 °C Storage Temperature -55 ~ 150 °C
TC = 25°C unless otherwise noted
Symbol Parameter Conditions Min. Max Units
BV
CBO
BV
CER
BV
EBO
I
CBO
I
CES
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
C
ob
* Pulse Test: PW ≤ 300µs, Duty Cycle ≤ 2%
Collector-Base Breakdown Voltage IC = 100µA, IB = 0 500 V Collector-Emitter Breakdown Voltage * IC = 1mA, IB = 0 400 V Emitter-Base Breakdown Voltage IE = 100µA, IC = 0 6 V Collector Cut-off Current VCB = 400V, IE = 0 0.1 µA Collector Cut-off Current VCE = 400V, IB = 0 0.5 µA Emitter Cut-off Current VEB = 4V, IC = 0 0.1 µA DC Current Gain * VCE = 10V, IC = 1mA
= 10V, IC = 10mA
V
CE
V
= 10V, IC = 50mA
CE
= 10V, IC = 100mA
V
CE
Collector-Emitter Saturation Voltage * IC = 1mA, IB = 0.1mA
= 10mA, IB = 1mA
I
C
= 50mA, IB = 5mA
I
C
40 50 45 40
200
0.4
0.5
0.75 Base-Emitter Saturation Voltage * IC = 10mA, IB = 1mA 0.75 V Output Capatitance VCB = 20V, IE = 0, f = 1MHz 7 pF
V V V
©2004 Fairchild Semiconductor Corporation
SB29003 Rev. A
1
www.fairchildsemi.com
Page 2
Typical Performance Characteristics
SB29003 High Voltage Transistor
Figure 1. DC Current Gain Figure 2. Capacitance
160
140
120
100
80
60
40
20
, DC CURRENT GAIN
FE
h
0
-20
-40 1 10 100 1000 10000
IC[mA], COLLECTOR CURRENT
Figure 3. On Voltage Figure 4. Collector Saturation Region
1.0
Ta=25oC
0.8
0.6
0.4
[V], VOLTA GE
VBE(sat) @IC/IB=10
VBE(on) @VCE=10V
VCE=10V
1000
100
C
ib
[pF], CAPACITANCE
ob
[pF],C
ib
C
C
ob
10
1
0.1 1 10 100 1000
Ta=25oC f=1MHz
VCB[V], COLL ECTOR-BA S E VOLTAGE
0.5
IC=10mAIC=1mA
0.4
0.3
0.2
IC=50mA
Ta=25oc
0.2
0.0
VCE(sat)@IC/IB=10
0.1 1 10 100 1000
IC[mA], COLLECTOR CURRENT
Figure 5. High Frequency Current Gain
100
10
1
, SMALL SIGNAL CURRENT GAIN
FE
h
0.1
0.1 1 10 100 1000
IC[mA], COLLECTOR CURREN T
VCE=10V f=10MHz
Ta=25oC
0.1
[V] COLLE CTOR EMITTE R VOLTAGE
CE
V
0.0 10 100 1000 10000 100000
IC[mA], COLLECTOR CURRENT
SB29003 Rev. A
2
www.fairchildsemi.com
Page 3
Mechanical Dimensions
SOT-223
3.00
±0.10
MAX1.80
±0.20
1.75
±0.20
0.08MAX
+0.04
0.06
–0.02
SB29003 High Voltage Transistor
±0.20
0.65
±0.30
2.30 TYP
(0.95) (0.95)
±0.20
(0.46)
(0.89)
1.60
4.60
6.50
±0.25
±0.20
0.70
±0.10
3.50 (0.60) (0.60)
0.25
+0.10 –0.05
7.00
0°~10°
SB29003 Rev. A
Dimensions in Millimeters
3
www.fairchildsemi.com
Page 4
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
A
CEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™
2
E
CMOS™ EnSigna™ FACT™ FACT Quiet Series™
Across the board. Around the w or ld. ™ The Power Franchise
®
Programmable Active Droop™
®
FAST FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™
ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC
®
OPTOPLANAR™ PACMAN™ POP™
Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET
®
®
QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™
Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET
®
UniFET™ VCX™
®
®
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUM E ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
SB29003 High Voltage Transistor
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.
supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
4
SB29003 Rev. A
Rev. I14
www.fairchildsemi.com
Loading...