• Noise reduction for Y, U and V signals in 4 : 1 : 1 format
• Single 5 V ±10% power supply
• Communication by means of serial communication
protocol 83C654 (SNERT bus)
• Via SNERT bus, 10 different types of noise reduction
selectable; the noise reduction function can also be
disabled
• Phase relation write enable input/output signal
simultaneously switchable over one clock period w.r.t.
input/output samples
• 8-bit wide data processing for Y, U and V; in unsigned
format (Y signal) and in 2’s complement (U and V
signals)
• One fixed line locked clock operation frequency up to
16 MHz (typical)
• Exactly one line delay.
SAA4945H
GENERAL DESCRIPTION
The SAA4945H, LIMERIC (LIne MEmory noise Reduction
IC) is a 2-D recursive noise reduction filter for both
luminance and colour difference signals. The noise
reduction is automatically adapted to the global noise level
in the image. Ten different preferences of noise reduction
can be set using a synchronous receiver transmitter bus;
SNERT (Synchronous No parity Eight bit Receive
Transmit) bus. Alternatively, the noise reduction can be
switched off. The LIMERIC is generally placed directly
after the ADC in the feature box and works fully in the 1f
(50/60 Hz) domain.
h
QUICK REFERENCE DATA
SYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNIT
V
DD
I
DD
supply voltage (pins 5, 29 and 30)4.55.05.5V
supply current−70−mA
Ppower dissipation−350−mW
f
CLK
f
SNERT
T
amb
clock frequency±7%; note 1101617.1MHz
bus clock frequency−−1MHz
operating ambient temperature0−70°C
Note
1. Maximum number of clocks per line is 1024.
ORDERING INFORMATION
TYPE
NUMBER
NAMEDESCRIPTIONVERSION
PACKAGE
SAA4945HQFP44 plastic quad flat package; 44 leads (lead length 1.3 mm); body 10 × 10 × 1.75 mm SOT307-2
1997 Jun 102
Page 3
Philips SemiconductorsPreliminary specification
LIne MEmory noise Reduction IC
(LIMERIC)
BLOCK DIAGRAM
handbook, full pagewidth
NOISE
UI0, U
VI0, V
16, 15
I1
I1
18, 17
REFORMATTER
REDUCTION
FILTER
(MULTIPLEXED)
N_thr_UV
RAM_UV∆t
V
DD1
5
V
FORMATTER
DD2
V
29
DD3
SAA4945H
30
36, 37
34, 35
UO0, U
VO0, V
O1
O1
Y
to Y
I0
I7
814 to 7
8
NOISE
REDUCTION
FILTER
N_thr_Y
NOISE
ESTIMATOR
TASTE
NTHR
SNERT
INTERFACE
SDNA
SNCL
N_thr_UV
val
W
YpScale
VRST
RAM_Y
SAA4945H
internal
control
signals
CONTROL
432
2221
19
VaCLK
I
6
GND1WE
20
GND2
23
GND3
TEST
CONTROL
27
GND4
GND5
38 to 44, 1
28
32
GND6
Y
to
O0
YO6, Y
O7
26
TST0
25
TST1
24
TST2
31
WE
O
33
n.c.
MGK170
Fig.1 Block diagram.
1997 Jun 103
Page 4
Philips SemiconductorsPreliminary specification
LIne MEmory noise Reduction IC
(LIMERIC)
PINNING
SYMBOLPINTYPEDESCRIPTION
Y
O7
SNDA2input/outputdata from interface SNERT bus
SNCL3inputclock from interface SNERT bus
VRST4inputreset in the vertical blanking interval
V
7inputluminance input bit 7 from analog-to-digital converter
8inputluminance input bit 6 from analog-to-digital converter
9inputluminance input bit 5 from analog-to-digital converter
10inputluminance input bit 4 from analog-to-digital converter
11inputluminance input bit 3 from analog-to-digital converter
12inputluminance input bit 2 from analog-to-digital converter
13inputluminance input bit 1 from analog-to-digital converter
14inputluminance input bit 0 from analog-to-digital converter
15inputU input bit 1 from analog-to-digital converter
16inputU input bit 0 from analog-to-digital converter
17inputV input bit 1 from analog-to-digital converter
18inputV input bit 0 from analog-to-digital converter
21inputwrite enable input
29supplysupply voltage 2
30supplysupply voltage 3
31outputwrite enable output
34outputV output bit 0
35outputV output bit 1
36outputU output bit 0
37outputU output bit 1
38outputluminance output bit 0
39outputluminance output bit 1
40outputluminance output bit 2
SAA4945H
1997 Jun 104
Page 5
Philips SemiconductorsPreliminary specification
LIne MEmory noise Reduction IC
(LIMERIC)
SYMBOLPINTYPEDESCRIPTION
Y
O3
Y
O4
Y
O5
Y
O6
handbook, full pagewidth
41outputluminance output bit 3
42outputluminance output bit 4
43outputluminance output bit 5
44outputluminance output bit 6
O1
O6
YO5YO4YO3YO2YO1Y
Y
44
43
42
41
O0
U
40
39
38
37
UO0VO1V
36
35
O0
34
SAA4945H
Y
O7
SNDA
SNCL
VRST
V
DD1
GND1
Y
Y
Y
Y
Y
22
Va
33
32
31
30
29
28
27
26
25
24
23
MGK169
n.c.
GND6
WE
V
DD3
V
DD2
GND5
GND4
TST0
TST1
TST2
GND3
O
1
2
3
4
5
6
7
I7
8
I6
9
I5
10
I4
11
I3
12
13
I2
I1
Y
Y
14
I0
Y
SAA4945H
15
16
I1
I0
U
U
19
CLK
20
GND2
21
I
WE
17
18
I0
I1
V
V
Fig.2 Pin configuration.
1997 Jun 105
Page 6
Philips SemiconductorsPreliminary specification
LIne MEmory noise Reduction IC
(LIMERIC)
FUNCTIONAL DESCRIPTION
The digital LIMERIC is an effective low noise reduction IC
for luminance and colour difference signals. Noise filtering
is automatically adapted to the global noise level which is
measured within the picture content. The two dimensional
non-linear noise reduction (one for luminance, one for
chrominance) uses only line memory to function.
Furthermore, up to 10 different preferences can be set by
the user.
As shown in Fig.1, the main components of the device are
the noise reduction filter with the line memories (RAM) and
the noise estimator. Other components shown are the
reformatter, formatter, controller and a SNERT bus
transceiver.
Noise reduction filter
Both luminance and chrominance signals are filtered with
vertical recursion. This is produced as the filter receives
both filtered samples from the previous line, and unfiltered
samples from the current line. A new replacement value is
calculated for each sample read from the line memory.
This in turn, is the filtered response value for the reference
input pixel. The reference pixel is then placed at the centre
of the delay-line into which the current (unfiltered) video
line is shifted. Tables 1 to 6 show this as an ‘O’.
Both luminance and colour difference signals are filtered
using the so-called Discriminating AveragingFilter (DAF),
in which filter coefficients are related to the Absolute
Difference (AD) between samples. The filter uses samples
from both present and previous line (using the line delay)
and the result of the filter is stored back in the line memory.
In this way a vertical recursive structure is realized.
The filter coefficients are set depending on the noise
measured by the noise estimator or the NTHR (SNERT
register F9).
SAA4945H
LUMINANCE FILTER
The taps structure of the luminance filter is as shown in
Table 2.
Table 2 Luminance processing
X . . . . X . . . X . . . X . . . . X ← 5 Y samples from the
filtered line (distance 4 / 5
pixel)
o . O . o← 3 Y samples from the
incoming line (distance 2
pixels)
A ‘weave’ function is used to reduce any smearing effect
that could occur at edges. As shown in Tables 3 to 6, the
‘weave’ calculates over 4 consecutive lines. The relative
position of the actual pixel changes one position every line.
Table 3 For line 2n
X . . . . X . . . X . . . X . . . . X
o . O . o
Table 4 For line 2n + 1
X . . . . X . . . X . . . X . . . . X
. . o . O . o
Table 5 For line 2n + 2
X . . . . X . . . X . . . X . . . . X
o . O . o
Table 6 For line 2n + 3
X . . . . X . . . X . . . X . . . . X
o . O . o . .
C
HROMINANCE FILTER
The basic signal processing for either U or V is via the
same filter. It is used to process both V and U using a
multiplexed operation.
The taps structure of the chrominance filter is as shown in
Table 1.
Table 1 Chrominance processing
X X X X X← 5 adjacent R − Y samples from the
filtered line
o O o← 3 adjacent R − Y samples from the
incoming line
1997 Jun 106
Table 7 Weave configuration
Depending on even and odd fields the ‘weave’ has the
following configuration:
ODD FIELDSEVEN FIELDS
XX
XX
XX
XX
XX
XX
XX
Page 7
Philips SemiconductorsPreliminary specification
LIne MEmory noise Reduction IC
SAA4945H
(LIMERIC)
Noise estimator
The threshold value N_thr for the filters is calculated in the noise estimator block (see Fig.3). There are four options for
producing the N_thr value:
1. Pre-filter gain setting (YpScale)
2. W
3. TASTE (TS) scales the N_thr linear
4. NTHR is externally applied when the noise estimator is disabled by the control bit ExThr of the Status Register.
handbook, full pagewidth
selects the sensitivity of the noise estimator
val
PRE-FILTERY
I
YpScale
NOISE ESTIMATOR
W
val
TS0-TS3
Fig.3 Noise estimator.
×
4
NTHR
MUX
ExThr
N_thr
MGK171
SIGNAL DESCRIPTION
Input signals
TO Y
Y
I7
(PINS 7 TO 14)
I0
• Eight bit wide digital luminance input bus
• Unsigned data; dynamic range between 0 and 255
• The maximum number of input samples equals
852 active samples/line.
U
I1
AND U
(PINS 15 AND 16)
I0
• Colour difference signal U
• Data in 2’s complement; dynamic range between
−128 and +127
• Y : U : V format 4 : 1 : 1; see Table 8 for input data
coding
• The maximum number of input samples equals
213 samples/line
• Internal data processing of U signals in unsigned format.
V
I1
AND V
(PINS 17 AND 18)
I0
• Colour difference signal V
• Data in 2’s complement; dynamic range between
−128 and +127
• Y : U : V format 4 : 1 : 1; see Table 8 for input data
coding
• The maximum number of input samples equals
213 samples/line
• Internal data processing of V signals in unsigned format.
1997 Jun 107
Page 8
Philips SemiconductorsPreliminary specification
LIne MEmory noise Reduction IC
(LIMERIC)
Table 8 Input /output data coding
INPUTBITINPUT DATA SEQUENCE
YY7Y
Y6Y
Y5Y
Y4Y
Y3Y
Y2Y
Y1Y
Y0Y
UUI1U
UI0U
VVI1V
VI0V
WEI(PIN 21)
• Write enable input
• Write enable indicates the time when active input
samples (Y, U and V) are present
• Timing relation (see Fig.4) depending on the logic level
of the Write Enable Select signal (WES) in status
register; to adapt to different external video memories
7Y
0
6Y
0
5Y
0
4Y
0
3Y
0
2Y
0
1Y
0
0Y
0
7U
0
6U
0
7V
0
6V
0
• The number of input samples is a multiple of 4 (see
• Start of new line indicated by write enable signal LOW
• During active line, WE
SAA4945H
7Y
1
6Y
1
5Y
1
4Y
1
3Y
1
2Y
1
1Y
1
0Y
1
5U
0
4U
0
5V
0
4V
0
Fig.4)
for at least 4 consecutive clock periods (see Fig.4)
more than 1 clock cycle.
7Y
2
6Y
2
5Y
2
4Y
2
3Y
2
2Y
2
1Y
2
0Y
2
3U
0
2U
0
3V
0
2V
0
is not allowed to be LOW for
I
7
3
6
3
5
3
4
3
3
3
2
3
1
3
0
3
1
0
0
0
1
0
0
0
1997 Jun 108
Page 9
Philips SemiconductorsPreliminary specification
LIne MEmory noise Reduction IC
(LIMERIC)
handbook, full pagewidth
CLK
WE
I
(WES = 0 status register)
WE
I
(WES = 1 status register)
line n
Y
to Y
I0
I7
UI0, U
I1
VI0, V
I1
CLK
WE
O
(WES = 0 status register)
WE
O
(WES = 1 status register)
line n + 1
Y
to Y
I0
I7
XX
X
X
XX
SAA4945H
Y
0
Y
0
Y
1
Y
1
X
XX
XX
one sequence; X: non valid data
X
Y
2
Y
2
Y
3
U
. 1,0U0. 3,2U0. 5,4U0. 7,6
0
V
. 1,0V0. 3,2V0. 5,4V0. 7,6
0
Y
3
UI0, U
VI0, V
I1
I1
X
X
Fig.4 Write enable timing.
Va (PIN 22)
• Vertical synchronization signal, active HIGH
• Minimum HIGH period equals one line period
• Vertical synchronization signals converted to system
clock domain internally. So the Va pulse can be
asynchronous.
• See timing diagram Fig.6 and Table 11 for timing
specification.
U
XX
XX
one sequence; X: non valid data
. 1,0U0. 3,2U0. 5,4U0. 7,6
0
V
. 1,0V0. 3,2V0. 5,4V0. 7,6
0
MGK172
CLK (PIN 19)
• Line locked system clock, up to 16 MHz typical
• All clock related signals act on the rising edge of the
system clock.
TST0, TST1
AND TST2 (PINS 26, 25 AND 24)
• Test mode inputs
• Active HIGH, with internal pull-down resistors.
1997 Jun 109
Page 10
Philips SemiconductorsPreliminary specification
LIne MEmory noise Reduction IC
SAA4945H
(LIMERIC)
Table 9 Test settings
TST2TST1TST0MODE
000application mode
(1)
X
1X
(1)
X
1X
(1)
(1)
X
Note
1. X = don’t care.
SNDA, SNCL
AND VRST (PINS 2, 3 AND 4)
• Serial interface signals
• SNERT bus protocol (Synchronous No parity 8-bit receiver and Transmission bus)
• SNDA is a bidirectional signal with 8-bit wide data and address (LSB first)
• Serial interface signals converted (internally) to system clock domain. To avoid set-up violations these signals are
clocked two times by the system clock before further processing is performed.
• Synchronization of serial address (every even byte) and data (every odd byte) by VRST.
(1)
(1)
X
test mode
test mode
1test mode
h(D)
t
d(D)
data
valid
T
cy(SNCL)
data
valid
data
valid
handbook, full pagewidth
SNCL
SNDA
(receiver
mode)
SNDA
(transmitter
mode)
LSB
data
valid
data
valid
t
su(i)(D)
data
valid
t
h(Q)
t
Fig.5 Timing diagram of serial interface.
Table 10 Timing characteristics (see Fig.5)
SYMBOLPARAMETERMIN.MAX.UNIT
t
cy(SNCL)
t
su(i)(D)
t
h(D)
t
h(Q)
t
d(D)
SNCL cycle time1−µs
input set-up time90−ns
input hold time50−ns
output data hold time0−ns
output data delay time−700ns
data
valid
MGK173
1997 Jun 1010
Page 11
Philips SemiconductorsPreliminary specification
LIne MEmory noise Reduction IC
(LIMERIC)
Output signals
Y
TO Y
O0
• 8-bit wide digital luminance output bus
• Data format: unsigned, dynamic range between
0 and 255.
U
AND U
O1
• Colour difference signal U
• Data format: 2’s complement, dynamic range between
−128 and +127
• Y : U : V format 4 : 1 : 1; see Table 8.
V
AND V
O1
• Colour difference signal V
• Data format: 2’s complement, dynamic range between
−128 and +127
• Y : U : V format 4 : 1 : 1; see Table 8.
(PINS 38 TO 44 AND 1)
O7
(PINS 37 AND 36)
O0
(PINS 35 AND 34)
O0
SAA4945H
WE
(PIN 31)
O
• Write enable output
• Write enable indicates the time when active samples (Y,
U and V) are present
• Timing relation (see Fig.6) depending on write enable
select signal (WES) in status register; to adapt to
different external video memories
• The number of output samples is a multiple of 4
• The write enable output sequence is a copy of the write
enable input sequence of the previous line (see Fig.6)
with a shift of one line
• The last line in field is not processed.
handbook, full pagewidth
Va
VRST
WE
I
WE
O
internal flag
to mask
WE
O
t
Va(min)H
t
su(Va)
t
(WE-VRST)LH
L(n−1)L(n)L(0)L(2)L(1)
L(n−2)L(n−1)L(0)L(1)
1 clk cycle
t
(Va-WE)LH
t
(Va-VRST)LH
MGK174
Fig.6 Timing diagram for WEO blanking and Va.
1997 Jun 1011
Page 12
Philips SemiconductorsPreliminary specification
LIne MEmory noise Reduction IC
(LIMERIC)
Table 11 Va versus VRST
SYMBOLPARAMETERMIN.UNIT
t
Va(min)H
t
su(Va)
t
(Va-WE)LH
t
(Va-VRST)LH
t
(WE-VRST)LH
LIST OF SNERT BUS ADDRESSES USED IN LIMERIC
TASTE register
Table 12 TASTE register usage
USEACTION
Purposeto set 4 different types of noise reduction
AddressF3
Read/writewrite
Range0 to 4; 0 = noise filtering disabled
minimum Va HIGH time64µs
set-up Va to negative edge of WE
I
Va LOW to WEI HIGH time0µs
Va LOW to VRST HIGH time0µs
WEI LOW to VRST HIGH time64µs
0: data coincides with write enable (both input and output)
1: data is delayed over one clock period with respect to the write enable (both input and output)
see Fig.4
1DEMDemo Mode
0: demo mode disabled
1: demo mode on; the noise reduction circuit is switched on for the left half of the screen - the noise
reduction is disabled (split screen function) for the right half of the screen
2WvWeave
0: enable weave
1: disable weave
3ExThrExternal Threshold control bit
0: N_thr calculated by noise estimator
1: value of N_thr from register F9 is used
4Xdon’t care
5Tctrl1Test control 1
0: normal operation
1: test mode
6Tctrl2Test control 2
0: normal operation
1: test mode
5Tctrl3Test control 3
0: normal operation
1: test mode
1997 Jun 1013
Page 14
Philips SemiconductorsPreliminary specification
LIne MEmory noise Reduction IC
(LIMERIC)
W
register (wanted value)
val
Table 18 W
Purposeregister for setting up noise estimator
AddressF5
Read/writewrite
Range0 to 255
Purposeregister for general setting of the noise estimator
AddressFA
Read/writewrite
Table 23 Noise estimator setting register
MSBLSB
YpScale1YpScale0000000
Table 24 Noise estimator setting description
YpScale1YpScale0DESCRIPTION
00noise estimator pre-filter gain setting= 1
01noise estimator pre-filter gain setting= 0.5
10noise estimator pre-filter gain setting= 0.25
11noise estimator pre-filter bypassed
1997 Jun 1014
Page 15
Philips SemiconductorsPreliminary specification
LIne MEmory noise Reduction IC
SAA4945H
(LIMERIC)
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOLPARAMETERMIN.MAX.UNIT
V
DD1
V
DD2
V
I
T
stg
T
amb
P
tot
P
O(pin)
THERMAL CHARACTERISTICS
SYMBOLPARAMETERCONDITIONSVALUEUNIT
R
th(j-a)
supply voltage 1−0.5+6.5V
supply voltage 2−0.5+6.5V
input voltage−0.5+6.5V
storage temperature−55+150°C
operating ambient temperature−40+85°C
total power dissipation−150mW
output power dissipation per output pin−100mW
thermal resistance from junction to ambientin free air65K/W
1997 Jun 1015
Page 16
Philips SemiconductorsPreliminary specification
LIne MEmory noise Reduction IC
SAA4945H
(LIMERIC)
CHARACTERISTICS
V
=5V; T
DD
SYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNIT
Supply
V
DD
I
DD
T
amb
T
stg
Ppower dissipation−350−mW
CLK
f
CLK
δduty cycle40−60%
V
IL
V
IH
C
L
Y
to YI0, UI1, UI2, VI1, VI0, WEI and Va
I7
V
IL
V
IH
I
I
t
su(i)(D)
t
h(D)
Y
to YO0, UO1, UO2, VO1, VO0 and WE
O7
V
OL
V
OH
t
h(Q)
t
d(D)
SNDA and SNCL
f
SNERT
V
IL
V
IH
V
OL
V
OH
TST0, TST1 and TST2
V
IL
V
IH
=25°C; unless otherwise specified.
amb
supply voltage (pins 5, 29 and 30)4.55.05.5V
supply current−70−mA
operating ambient temperature0−70°C
storage temperature−50−+150° C
QFP44: plastic quad flat package; 44 leads (lead length 1.3 mm); body 10 x 10 x 1.75 mm
c
y
X
A
3323
34
22
Z
E
SAA4945H
SOT307-2
e
w M
b
p
pin 1 index
44
1
w M
b
0.25
p
D
H
D
cE
p
0.40
0.25
0.20
10.1
0.14
D
9.9
e
DIMENSIONS (mm are the original dimensions)
mm
A
max.
2.10
0.25
0.05
1.85
1.65
UNITA1A2A3b
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
12
11
Z
D
B
v M
02.55 mm
scale
(1)
(1)(1)(1)
eH
H
D
10.1
9.9
12.9
0.81.3
12.3
v M
H
E
E
A
B
LLpQZywv θ
E
12.9
12.3
0.95
0.55
A
2
A
A
1
detail X
0.85
0.75
0.150.10.15
Q
(A )
3
θ
L
p
L
Z
E
D
1.2
0.8
1.2
0.8
o
10
o
0
OUTLINE
VERSION
SOT307-2
IEC JEDEC EIAJ
REFERENCES
1997 Jun 1017
EUROPEAN
PROJECTION
ISSUE DATE
92-11-17
95-02-04
Page 18
Philips SemiconductorsPreliminary specification
LIne MEmory noise Reduction IC
(LIMERIC)
SOLDERING
Introduction
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our
“IC Package Databook”
Reflow soldering
Reflow soldering techniques are suitable for all QFP
packages.
The choice of heating method may be influenced by larger
plastic QFP packages (44 leads, or more). If infrared or
vapour phase heating is used and the large packages are
not absolutely dry (less than 0.1% moisture content by
weight), vaporization of the small amount of moisture in
them can cause cracking of the plastic body. For more
information, refer to the Drypack chapter in our
Reference Handbook”
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
(order code 9398 652 90011).
“Quality
(order code 9398 510 63011).
SAA4945H
Wave soldering
Wave soldering is not recommended for QFP packages.
This is because of the likelihood of solder bridging due to
closely-spaced leads and the possibility of incomplete
solder penetration in multi-lead devices.
If wave soldering cannot be avoided, the following
conditions must be observed:
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave)
soldering technique should be used.
• The footprint must be at an angle of 45° to the board
direction and must incorporate solder thieves
downstream and at the side corners.
Even with these conditions, do not consider wave
soldering the following packages: QFP52 (SOT379-1),
QFP100 (SOT317-1), QFP100 (SOT317-2),
QFP100 (SOT382-1) or QFP160 (SOT322-1).
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Repairing soldered joints
Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
1997 Jun 1018
Page 19
Philips SemiconductorsPreliminary specification
LIne MEmory noise Reduction IC
SAA4945H
(LIMERIC)
DEFINITIONS
Data sheet status
Objective specificationThis data sheet contains target or goal specifications for product development.
Preliminary specificationThis data sheet contains preliminary data; supplementary data may be published later.
Product specificationThis data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Jun 1019
Page 20
Philips Semiconductors – a worldwide company
Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
Printed in The Netherlands547047/20/01/pp20 Date of release: 1997 Jun 10Document order number: 9397 750 01608
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