Datasheet sa621 DATASHEETS (Philips)

INTEGRATED CIRCUITS

SA621

1GHz - Low voltage LNA, mixer and VCO

Product specification 1997 Nov 07
IC17 Data handbook

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Philips Semiconductors Product specification

SA6211GHz low voltage LNA, mixer and VCO

DESCRIPTION

The SA621 is a combined low-noise amplifier, mixer and VCO
designed for high-performance low-power communication systems
from 800-1000MHz. The low-noise preamplifier has a 1.7dB noise
figure at 881MHz with 15dB gain and an IP3 intercept of -7dBm at
the input. The gain is stabilized by on-chip compensation to vary
less than ±0.2dB over -40 to +85°C temperature range. The
wide-dynamic-range mixer has a 12dB noise figure and IP3 of
+4.5dBm at the input at 881MHz. The integrated VCO circuit with
external resonator produces a high quality LO signal that drives the
mixer and is buffered to an external PLL synthesizer IC. The
nominal current drawn from a single 3V supply is 13.3mA.
Additionally, the entire circuit can be powered down to further reduce
the supply current to less than 20µA.

FEATURES

•Low current consumption

•Outstanding gain and noise figure

•Excellent gain stability versus temperature and supply voltage

•LNA, mixer and VCO power down capability

•Monotonic VCO frequency vs control voltage

PIN CONFIGURATION

1

PD1

2

PD2

3

GND

4

LO OUT

5

GND
GND

6
7

TANK

8

GND
GND

9

BYPASS

10

Figure 1. Pin Configuration

APPLICATIONS

•900MHz cellular and cordless front-end

•Spread spectrum receivers

•RF data links

•UHF frequency conversion

•Portable radio

20

MIXER OUT
MIXER OUT

19
18

GND

17

MIXER IN
GND

16

LNA IN

15

GND

14

LNA OUT

13
12

V

CC

GND

11

SR01429

ORDERING INFORMATION

DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #

20-Pin Thin Shrink Small Outline Package (Surface-mount, TSSOP)

BLOCK DIAGRAM

OUT

MIXER

OUT

GND

MIXER

20 19 18 17 16

10pF 10pF

PD1 PD2 GND

MIXER

IN

43215

LO GND BYPASS

OUT

Figure 2. SA621 Block Diagram

GND

GND

-40 to +85°C

LNA

IN GND

GND

LNA

OUT

V

CC

15 14 13 12 11

LNA

761098

GND GND

TANK

SA621DH SOT360-1

SR01428

1997 Nov 07 853-1849 018660

2

Philips Semiconductors Product specification

SYMBOL

PARAMETER

TEST CONDITIONS

UNITS

ICCSu ly current

SA6211GHz low voltage LNA, mixer and VCO

ABSOLUTE MAXIMUM RATINGS

SYMBOL PARAMETER RATING UNITS

V

T

P
T

CC

V

IN

P

D

JMAX

MAX

STG

Supply voltage
Voltage applied to any other pin -0.3 to (VCC + 0.3) V
Power dissipation, TA = 25°C (still air)2

Maximum operating junction temperature 150 °C
Maximum power input/output +20 dBm
Storage temperature range –65 to +150 °C

NOTE:

1. Transients exceeding 8V on V

2. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance,

θ

3. Pins 19 and 20 are ESD sensitive (mixer outputs).

JA

RECOMMENDED OPERATING CONDITIONS

SYMBOL PARAMETER RATING UNITS

V

CC

T

A

T

J

Supply voltage 2.7 to 5.5 V
Operating ambient temperature range -40 to +85 °C
Operating junction temperature -40 to +105 °C

1

20-Pin Plastic SSOP

pin may damage product.

CC

: 20-Pin SSOP = 110°C/W

-0.3 to +6 V

980 mW

DC ELECTRICAL CHARACTERISTICS

VCC = +3.0V , TA = 25°C; unless otherwise stated.

pp

V

PD logic threshold voltage 1.2 1.6 1.8 V

T

V

V

Logic 1 level 2.0 V

IH

Logic 0 level –0.3 0.8 V

IL

I

PD1 input current Enable = 0.4V 10 µA

IL

I

PD2 input current Enable = 2.4V 10 µA

IH

LIMITS

MIN TYP MAX

Full power-on 13.3 mA

LNA powered-down 10 mA

Standby (VCO + bias) 5.7 mA

Full power-down 20 µA

CC

V

1997 Nov 07

3

Philips Semiconductors Product specification

SYMBOL

PARAMETER

TEST CONDITIONS

UNITS

2

VCO hase noise

2

dBc/Hz

SA6211GHz low voltage LNA, mixer and VCO

AC ELECTRICAL CHARACTERISTICS

VCC = +3.0V , TA = 25°C; RFIN = 881MHz, f

Low Noise Amplifier

f
S
S

RF input frequency range 800 1000 MHz

RF

Amplifier gain 15 dB

21

Amplifier gain in power-down mode -28 dB

21

∆S21/∆T Gain temperature sensitivity enabled 0.006 dB/°C

∆S21/∆f Gain frequency variation 800MHz - 1.0GHz ±0.013 dB/MHz

S
S
S

P

Amplifier reverse isolation @ 881 MHz -28 dB

12

Amplifier input match With ext. impedance matching -10 dB

11

Amplifier output match -10 dB

22

Amplifier input 1dB gain compression -20 dBm

-1dB

IP3 Amplifier input third order intercept -7 dBm

NF Amplifier noise figure 1.7 dB

t

t

OFF

Amplifier turn-on time (Enable Lo → Hi) 120 µs

ON

Amplifier turn-off time (Enable Hi → Lo) 0.3 µs

Mixer

PG
S

NF

P

IP3

IP

P

RFM-IF

P

LO-IF

P

LO-RFM

P

LO-RF

Voltage Controlled Oscillator (VCO)

f

VCO

P

Mixer power conversion gain: RP = RL = 1.2kΩ,

C

Mixer input match Ext. impedance matching req. -10 dB

11M

Mixer SSB noise figure 12 dB

M

Mixer input 1dB gain compression -10 dBm

-1dB

Mixer input third order intercept 4.5 dBm

M

Mixer input second order intercept 15 dBm

2INT

Mixer RF feedthrough RFIN = -25dBm -41 dBm
LO feedthrough to IF LO = -10dBm -23 dBm
LO to mixer input feedthrough -52 dBm
LO to LNA input feedthrough -38 dBm

1

VCO frequency range 883 1083 MHz
VCO power out See Figure 3 -10 -8 dBm

VCO

p

Harmonic content -22 dBc
Residual modulation 45 dB
Pulling figure VSWR=2:1, all phases ±500 kHz
Pushing figure ±100 kHz/V

Overall System

G

System gain LNA + Mixer 23.0 23.7 24.4 dB

SYS

NOTES:

1. VCO performance dependent on external components.

2. Based on copper-plated 2mm ceramic resonator (1/4 wave), f = 1025MHz, and can be improved by silver-plated or larger resonators.

= 964MHz; unless otherwise stated.

VCO

fRF = 881MHz, fLO = 964MHz,

Offset = 30kHz -109
Offset = 60kHz -115

= 83MHz

f

IF

–3

LIMITS

TYP

+3

8.7 dB

1997 Nov 07

4

Philips Semiconductors Product specification

SA6211GHz low voltage LNA, mixer and VCO

Table 1. Power ON/OFF Control Logic

PD1 PD2

0 0 Full chip power-down

0 1 or open VCO on, Mixer on, LNA power-down
1 or open 0 VCO on, LNA and Mixer power-down
1 or open 1 or open Full chip power-on (default)

C1
100pF

L6
12nH

L3

C3

6.8pF

IF

OUT

L1
560nH

L4
560nH

20 19 18 17 16 15 14 13 12 11

OUT

MIXER

OUT

MIXER GND GND GND GND

C2

10nF

C10

2.2pF

MIXER

IN

C14

6.8pF

C11

10nF

6.8nH

LNA

IN

C8
10nF

LNA
OUT

C13
33pF

V

+

CC

–

3V

C9

0.1µF

V

CC

SA621

PD1 PD2 GND GND GND TANK GND GND BYPASS

12345678910

R2

C6

10nF

24Ω

LO

VCO

OUT

OUT

C12
100pF

Figure 3. SA621 Applications Circuit

C10

220pF

C5

.5pF

C4

2.2pF

MURATA 2mm

1/4 WAVE

FREQ=1025MHz

L7

18.5nH
Hi–Q

VCO
CONTROL

D1

R1

D7

5.1kΩ
10nF

SR01424

1997 Nov 07

5

Philips Semiconductors Product specification

SA6211GHz low voltage LNA, mixer and VCO

PERFORMANCE CHARACTERISTICS

-4.00

-5.00

-6.00

-40°C

-7.00

-8.00
25°C

-9.00

CC

V POWER OUT (dBm)

-10.00

85°C

-11.00

-12.00

2.5 3 3.5 4 4.5 5 5.5
0

VCC (V)

VCO Power Out vs V

CC

-15

-16

-17

-18

85°C

-19

-20
25°C

-21

LNA 1dB (dBm)

-22

-40°C

-23

-24

-25

2.5 3 3.5 4 4.5 5 5.5

LNA 1dB Compression vs V

(V)

V

CC

CC

-9.0

-9.5

-40°C

-10.0
25°C

-10.5

MIXER 1dB (dBm)

-11.0

85°C

-11.5

-12.0

2.5 3 3.5 4 4.5 5 5.5

Mixer 1dB Compression vs V

7.0

6.5

6.0

5.5

5.0

4.5

MIXER IP3 (dBm)

4.0

3.5

3.0

2.5 3 3.5 4 4.5 5 5.5

Mixer IP3 vs V

V

CC

VCC (V)

(V)

CC

CC

-40°C

25°C

85°C

LNA GAIN (dB)

Figure 4.

-27.0

-40°C

-27.5

-28.0
25°C

-28.5

-29.0

-29.5

85°C

-30.0

-30.5

-31.0

2.5 3 3.5 4 4.5 5 5.5
0

LNA Gain (Disabled) vs V

-2

-3

-4

-5

-6
85°C

-7
25°C

-8

LNA IP3 (dBm)

-9

-10

-11

-40°C

-12

2.5 3 3.5 4 4.5 5 5.5

VCC (V)

(V)

V

CC

LNA IP3 vs V

CC

CC

SR01425

1997 Nov 07

6

Philips Semiconductors Product specification

SA6211GHz low voltage LNA, mixer and VCO

PERFORMANCE CHARACTERISTICS

13.8

13.6

13.4

13.2
25°C

13.0

85°C

CC

I (mA)

12.8

-40°C

12.6

12.4

12.2

12.0

11.8

2.5 3 3.5 4 4.5 5 5.5

ICC vs VCC and Temperature

(V)

V

CC

14

12

10

8

CC

I (mA)

6

4

2

0

2.5 3 3.5 4 4.5 5 5.5

ICC Full Chip Power–On

I

CC LNA Off, Mixer & VCO On

I

CC VCO On, LNA & Mixer Off

ICC vs VCC at Room Temperature

VCC (V)

12

11

-40°C

10

9

25°C

8

7

MIXER GAIN (dB)

85°C

6

5

4

2.5 3 3.5 4 4.5 5 5.5

Mixer Power Gain vs V

-44

-46

-48

-50
25°C

-52

-54

-40°C

-56

LO to MIXER IN (dBm)

-58

-60

-62
85°C

-64

2.5 3 3.5 4 4.5 5 5.5

LO to Mixer In Feedthrough vs V

V

(V)

CC

CC

V

(V)

CC

CC

LO to IF (dBm)

Figure 5.

-35

-36

-37
25°C

-38

-39

-40°C

-40

-41

LO to LNA IN (dBm)

-42
85°C

-43

-44

-45

2.5 3 3.5 4 4.5 5 5.5

LO to LNA In Feedthrough vs V

-20

-40°C

-21

-22
25°C

-23

-24

-25
85°C

-26

-27

-28

-29

-30

2.5 3 3.5 4 4.5 5 5.5

LO to IF Feedthrough vs V

V

(V)

CC

CC

(V)

V

CC

CC

SR01426

1997 Nov 07

7

Philips Semiconductors Product specification

SA6211GHz low voltage LNA, mixer and VCO

PERFORMANCE CHARACTERISTICS

–35

–36

–37

-40°C

–38

–39

25°C

–40

–41

MIXER IN to IF (dBm)

MIXER NOISE FIGURE (dB)

–95.0

85°C

–42

–43

–44

–45

2.5 3 3.5 4 4.5 5 5.5

Mixer In to IF Feedthrough vs V

12.5

12.4

12.3
85°C

12.2

12.1

25°C

12.0

11.9

-40°C

11.8

11.7

11.6

11.5

2.5 3 3.5 4 4.5 5 5.5

Mixer Noise Figure vs V

V

CC

VCC (V)

(V)

CC

CC

15.6

15.4

-40°C

15.2

15.0
25°C

14.8

14.6

14.4

LNA GAIN (dB)

LNA NOISE FIGURE (dB)

85°C

14.2

14.0

13.8

13.6

2.5 3 3.5 4 4.5 5 5.5

LNA Gain (Enabled) vs V

2.0

1.9
85°C

1.8

1.7

25°C

1.6

1.5

-40°C

1.4

1.3

1.2

1.1

1.0

2.5 3 3.5 4 4.5 5 5.5

LNA Noise Figure vs V

–95.0

V

(V)

CC

CC

(V)

V

CC

CC

–100.0

–105.0

–110.0

–115.0

VCO PHASE NOISE (dBc/Hz

–120.0

–125.0

85°C

25°C

40°C

2.5 3 3.5 4 4.5 5 5.5

1997 Nov 07

V

(V)

CC

VCO Phase Noise vs V

@60kHz Offset

CC

–100.0

–105.0

–110.0

–115.0

VCO PHASE NOISE (dBc/Hz

–120.0

–125.0

Figure 6.

8

85°C

40°C

2.5 3 3.5 4 4.5 5 5.5

VCO Phase Noise vs VCC @ 30kHz Offset

V

(V)

CC

SR01427

Philips Semiconductors Product specification

SA6211GHz low voltage LNA, mixer and VCO

CH2

START 100. 000 000 MHz STOP 1 200. 000 000 MHz

1 U FS

S

11

4

3

2

1

A. S11 DATA

1: 40.1 Ω

-129.6 Ω
200 MHz

2: 24.0 Ω

-62.9 Ω
400 MHz

3: 18.6 Ω

-37.4 Ω
600 MHz

4: 14.1 Ω

10.5 pF

-16.7 Ω
900 MHz

CH1

S

1 U FS

22

1: 40.5 Ω

2: 36.1 Ω

4

1

2

3

START 700. 000 000 MHz STOP 1 200. 000 000 MHz

3: 34.7 Ω

4: 34.9 Ω

B. S22 DATA

Figure 7. Typical S11 of LNA at 3V

-28.2 Ω
700 MHz

-12.4 Ω
800 MHz

3.5 Ω
900 MHz

3.74 Ω

661.4 pH
900 MHz

SR01252

1997 Nov 07

9

Philips Semiconductors Product specification

SA6211GHz low voltage LNA, mixer and VCO

CH1

S

1 U FS

22

4

1

2

3

START 700. 000 000 MHz STOP 1 200. 000 000 MHz

Figure 8. Typical S22 of LNA at 3V

CH1

10 U FS

S

21

1: 40.5 Ω

-28.2 Ω
700 MHz

2: 36.1 Ω

-12.4 Ω
800 MHz

3: 34.7 Ω

3.5 Ω
900 MHz

4: 34.9 Ω

3.74 Ω

661.4 pH
900 MHz

SR01253

1: 6.7 U

2

1

START 100. 000 000 MHz STOP 1 200. 000 000 MHz

3

4

2: 5.9 U

3: 5.9 U

4: 4.5 U

Figure 9. Typical S21 of LNA at 3V

142.5 °
200 MHz

112.3 °
400 MHz

78.1 °
600 MHz

21.2°
900 MHz

SR01254

1997 Nov 07

10

Philips Semiconductors Product specification

SA6211GHz low voltage LNA, mixer and VCO

CH2

START 100. 000 000 MHz STOP 1 200. 000 000 MHz

50 mU FS

S

12

4

3

1

2

Figure 10. Typical S12 of LNA at 3V

CH1

1 U FS

S

11

1: 1.9 mU

83.0 °
200 MHz

2: 1.6 mU

133.5 °
400 MHz

3: 11.4 mU

141.5 °
600 MHz

4: 27.9 mU

106.1°
900 MHz

SR01255

1: 122.8 Ω

2: 58.0 Ω

3: 45.9 Ω

4: 26.6 Ω

4

3

START 100. 000 000 MHz STOP 1 200. 000 000 MHz

1

2

Figure 11. Typical S11 of Mixer at 3V

-144.9 Ω
200 MHz

-86.8 Ω
400 MHz

-62.3 Ω
600 MHz

-43.2 Ω

4.085 pF
900 MHz

SR01256

1997 Nov 07

11

Philips Semiconductors Product specification

SA6211GHz low voltage LNA, mixer and VCO

CH1

1 U FS

S

/M

11

4

START 100. 000 000 MHz STOP 1 200. 000 000 MHz

3

2

1

Figure 12. Typical 1/S11 of VCO (Pin 7)at 3V

1: -11.766 Ω

289.41 Ω
200 MHz

2: 11.953 Ω

134.05 Ω
400 MHz

3: 16.555 Ω

78.48 Ω
600 MHz

3: 18.652 Ω

31.516 Ω

5.5732 nH
900 MHz

SR01257

1997 Nov 07

12

Philips Semiconductors Product specification

SA6211GHz low voltage LNA, mixer and VCO

Table 2. Typical S-Parameters of LNA at 3V

LNA

Freq (MHz)

100 0.86 -20 7.4 160 0.001 92 0.59 -10
122 0.86 -24 7.1 156 0.001 62 0.58 -12
144 0.85 -28 7.0 151 0.001 105 0.58 -14
166 0.83 -32 6.9 148 0.000 92 0.57 -16
188 0.82 -36 6.8 144 0.002 100 0.57 -18
210 0.81 -41 6.7 140 0.002 74 0.56 -20
232 0.80 -45 6.6 136 0.002 100 0.55 -22
254 0.79 -48 6.5 133 0.001 84 0.54 -25
276 0.78 -52 6.4 130 0.001 103 0.53 -27
298 0.76 -56 6.3 126 0.002 94 0.52 -29
320 0.75 -59 6.3 123 0.002 67 0.51 -31
342 0.73 -63 6.2 119 0.002 108 0.50 -33
364 0.71 -66 6.1 116 0.002 118 0.48 -35
386 0.70 -69 6.0 113 0.001 103 0.47 -36
408 0.69 -72 5.9 111 0.001 176 0.46 -37
430 0.68 -76 5.9 109 0.004 174 0.45 -37
452 0.69 -78 6.0 106 0.006 162 0.46 -38
474 0.68 -82 6.1 102 0.007 160 0.47 -42
496 0.67 -85 6.1 97 0.008 153 0.47 -46
518 0.66 -89 6.1 93 0.010 146 0.46 -50
540 0.65 -92 6.1 89 0.009 142 0.45 -55
562 0.63 -96 6.1 85 0.010 138 0.43 -59
584 0.62 -99 6.0 81 0.011 146 0.42 -64
606 0.62 -102 5.9 77 0.011 141 0.40 -69
628 0.61 -104 5.8 72 0.013 137 0.38 -73
650 0.61 -107 5.7 69 0.013 131 0.36 -78
672 0.60 -109 5.7 65 0.016 130 0.34 -84
694 0.60 -112 5.6 61 0.016 132 0.31 -90
716 0.59 -115 5.5 57 0.017 129 0.29 -97
738 0.59 -118 5.5 53 0.019 128 0.27 -104
760 0.59 -121 5.3 48 0.021 123 0.24 -113
782 0.59 -124 5.3 44 0.021 122 0.22 -122
804 0.59 -126 5.1 40 0.022 120 0.21 -133
826 0.59 -129 5.0 36 0.024 118 0.19 -145
848 0.59 -132 4.9 31 0.026 116 0.18 -159
870 0.59 -135 4.8 26 0.027 112 0.17 -175
892 0.59 -138 4.6 22 0.028 108 0.18 169
914 0.59 -142 4.5 18 0.028 106 0.19 155
936 0.59 -144 4.3 14 0.028 106 0.20 142
958 0.59 -148 4.2 9 0.030 100 0.22 130

980 0.59 -151 4.0 4 0.031 99 0.24 120
1002 0.59 -153 3.8 0 0.031 95 0.26 111
1024 0.59 -157 3.6 -2 0.032 91 0.28 102
1046 0.59 -160 3.5 -6 0.032 86 0.30 95
1068 0.59 -164 3.3 -10 0.033 86 0.33 88
1090 0.59 -167 3.2 -14 0.033 81 0.35 82
1112 0.59 -170 3.0 -18 0.031 79 0.36 77
1134 0.58 -172 2.8 -22 0.030 46 0.38 72
1156 0.58 -175 2.7 -25 0.031 79 0.39 67
1178 0.57 -178 2.5 -28 0.031 74 0.41 63
1200 0.57 178 2.4 -31 0.029 72 0.42 59

|S11|

(U)

<S11 (deg)

|S21|

(U)

<S21 (deg)

|S12|

(U)

<S12 (deg)

|S22|

(U)

<S
(deg)

22

1997 Nov 07

13

Philips Semiconductors Product specification

SA6211GHz low voltage LNA, mixer and VCO

Table 3. Typical S-Parameters of Mixer at 3V

Mixer

Freq (MHz)

100 0.73 -11
122 0.73 -147
144 0.72 -16
166 0.72 -19
188 0.72 -21
210 0.71 -24
232 0.70 -27
254 0.70 -29
276 0.69 -32
298 0.68 -34
320 0.67 -37
342 0.66 -39
364 0.64 -42
386 0.63 -–44
408 0.62 -46
430 0.61 -48
452 0.59 -50
474 0.58 -52
496 0.57 -53
518 0.56 -54
540 0.55 -56
562 0.55 -57
584 0.54 -59
606 0.54 -61
628 0.54 -62
650 0.54 -64

|S11|

(U)

<S11 (deg)

Freq (MHz)

672 0.54 -65
694 0.54 -67
716 0.54 -69
738 0.54 -71
760 0.54 -73
782 0.55 -76
804 0.55 -78
826 0.55 -80
848 0.55 -82
870 0.55 -85
892 0.56 -87
914 0.55 -90
936 0.56 -93
958 0.56 -96

980 0.56 -98
1002 0.56 -101
1024 0.57 -104
1046 0.57 -106
1068 0.57 -110
1090 0.57 -112
1112 0.57 -115
1134 0.57 -118
1156 0.57 -121
1178 0.57 -124
1200 0.57 -127

Mixer

|S11|

(U)

<S11 (deg)

1997 Nov 07

14

Philips Semiconductors Product specification

SA6211GHz low voltage dLNA, mixer and VCO

TSSOP20: plastic thin shrink small outline package; 20 leads; body width 4.4 mm SOT360-1

1997 Nov 07

15

Philips Semiconductors Product specification

SA6211GHz low voltage dLNA, mixer and VCO

DEFINITIONS

Data Sheet Identification Product Status Definition

Objective Specification

Preliminary Specification

Product Specification

Formative or in Design

Preproduction Product

Full Production

Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes, without notice, in the products,
including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright,
or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified. Applications that are described herein for any of these products are for illustrative purposes
only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing
or modification.

LIFE SUPPORT APPLICA TIONS
Philips Semiconductors and Philips Electronics North America Corporation Products are not designed for use in life support appliances, devices,
or systems where malfunction of a Philips Semiconductors and Philips Electronics North America Corporation Product can reasonably be expected

to result in a personal injury. Philips Semiconductors and Philips Electronics North America Corporation customers using or selling Philips
Semiconductors and Philips Electronics North America Corporation Products for use in such applications do so at their own risk and agree to fully
indemnify Philips Semiconductors and Philips Electronics North America Corporation for any damages resulting from such improper use or sale.

Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Sunnyvale, California 94088–3409
Telephone [phone]

This data sheet contains the design target or goal specifications for product development. Specifications
may change in any manner without notice.

This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design
and supply the best possible product.

This data sheet contains Final Specifications. Philips Semiconductors reserves the right to make changes
at any time without notice, in order to improve design and supply the best possible product.

Philips Semiconductors and Philips Electronics North America Corporation

register eligible circuits under the Semiconductor Chip Protection Act.

 Copyright Philips Electronics North America Corporation 1996

All rights reserved. Printed in U.S.A.

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1997 Nov 07

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