Datasheet SA56606-20GW, SA56606-27GW, SA56606-28GW, SA56606-29GW, SA56606-30GW Datasheet (Philips)

INTEGRATED CIRCUITS

SA56606-XX

CMOS system reset

Product data
Supersedes data of 2001 Apr 24
File under Integrated Circuits, Standard Analog

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2001 Jun 19

Philips Semiconductors Product data

SA56606-XXCMOS system reset

GENERAL DESCRIPTION

The SA56606-XX is a CMOS device designed to generate a reset
signal for a variety of microprocessor and logic systems. Accurate
reset signals are generated during momentary power interruptions
or whenever power supply voltages sag to intolerable levels. An
Open Drain output topology is incorporated for adaptability to a wide
variety of logic and microprocessor applications. Several reset
threshold versions of the device are available.

The SA56606-XX is available in the SOT23-5 surface mount
package.

FEA TURES

•12 V

maximum operating voltage

DC

•CMOS N-channel Open Drain output

•Offered in reset thresholds of

2.0, 2.7, 2.8, 2.9, 3.0, 3.1, 4.2, 4.3, 4.4, 4.5, 4.6, 4.7 V

•Available in SOT23-5 surface mount package

SIMPLIFIED SYSTEM DIAGRAM

V

DD

V

REF

R

V

SS

DC

V

2

R

R

3

V

DD

SA56606-XX

SS

APPLICATIONS

•Microcomputer systems

•Logic systems

•Battery monitoring systems

•Back-up power supply circuits

•Voltage detection circuits

R

PU

V

OUT

1

RESET

CPU

V

DD

V

SS

SL01313

Figure 1. Simplified system diagram.

2001 Jun 19 885–2247 26559

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Philips Semiconductors Product data

TYPE NUMBER

SA56606-XXCMOS system reset

ORDERING INFORMATION

PACKAGE
NAME DESCRIPTION

SA56606-XXGW SOT23-5, SOT25, SO5 plastic small outline package; 5 leads (see dimensional drawing) –40 to +85 °C

TEMPERATURE
RANGE

NOTE:

The device has twelve detection voltage options, indicated by the

XX on the order code.

XX

DETECT VOLTAGE (Typical)

20 2.0 V
27 2.7 V
28 2.8 V
29 2.9 V
30 3.0 V
31 3.1 V
42 4.2 V
43 4.3 V
44 4.4 V
45 4.5 V
46 4.6 V
47 4.7 V

PIN CONFIGURATION

1

V

OUT

2

V

DD

SS

SA56606-XX

34

5 N/C

N/CV

Part number marking

Each package is marked with a four letter code. The first three
letters designate the product. The fourth letter, represented by ‘x’, is
a date tracking code. For example, AAKB is device AAK (the
SA56606-30 reset), produced in time period ‘B’.

Part number

Marking

SA56606-20 A A F x
SA56606-27 A A G x
SA56606-28 A A H x
SA56606-29 A A J x
SA56606-30 A A K x
SA56606-31 A A L x
SA56606-42 A A M x
SA56606-43 A A N x
SA56606-44 A A P x
SA56606-45 A A R x
SA56606-46 A A S x
SA56606-47 A A T x

PIN DESCRIPTION

PIN SYMBOL DESCRIPTION

1 V

OUT

2 V
3 V
4 N/C No connection
5 N/C No connection

Reset High Output
Positive Supply

DD

Ground. Negative Supply

SS

MAXIMUM RATINGS

2001 Jun 19

SL01312

Figure 2. Pin configuration.

SYMBOL PARAMETER MIN. MAX. UNIT

V
V
I

OUT

T
T

DD
OUT

oper
stg

Power supply voltage –0.3 12 V
Output voltage – VSS – 0.3 V
Output current – 50 mA
Operating temperature –40 85 °C
Storage temperature –40 125 °C

P Power dissipation – 150 mW

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Philips Semiconductors Product data

1

SA56606-XXCMOS system reset

DC ELECTRICAL CHARACTERISTICS

Characteristics measured with T

SYMBOL

V

S

∆V

S

Reset detection threshold VS – 2% V
Hysteresis VDD = 0 V → VS + 1.0 V → 0 V

PARAMETER CONDITIONS

VS/∆T Threshold voltage temperature

coefficient

I

CC

I

OH

I

DS1

I

DS2

I

DS3

Supply current VDD = VS + 1.0 V – 0.25 1.0 µA
IDS leakage current when OFF VDD = VDS = 10 V – – 0.1 µA
N-channel IDS output sink current 1 VDS = 0.5 V; VDD = 1.2 V –0.23 –1.4 – mA
N-channel IDS output sink current 2

(for VS > 2.6 V)
N-channel IDS output sink current 3

(for V

> 3.9 V)

S

= 25 °C, unless otherwise specified.

amb

–40 °C ≤ T

VDS = 0.5 V; VDD = 2.4 V

VDS = 0.5 V; VDD = 3.6 V –3.2 –14.7 – mA

≤ +85 °C

amb

TEST

CIRCUIT

Fig. 17

2

Fig. 18

MIN. TYP. MAX. UNIT

VS + 2% V

S

VS × 0.03 VS × 0.05 VS × 0.08 V

– ±0.01 – %/°C

–1.6 –8.3 – mA

2001 Jun 19

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Philips Semiconductors Product data

SA56606-XXCMOS system reset

TYPICAL PERFORMANCE CURVES

0.50
VDD = VS + 1.0 V

0.45

NORMALIZED TO 25 °C

0.40

0.35

0.30

0.25

, SUPPLY CURRENT (mA)I

0.20

DD

0.15

0.10

–50 –25 0 25 50 75 100 125

T

, TEMPERATURE (°C)

amb

Figure 3. Supply current versus temperature.

200

V

= VSH – V

S(HYS)

(VCC RISING – VCC FALLING)

150

100

SL

SL01344

+0.20

VCC FALLING

, NORMALIZED THRESHOLD (V)V

+0.15

+0.10

+0.05

–0.05

–0.10

S

–0.15

–0.20

NORMALIZED TO 25 °C

V

S

V

S

–50 –25 0 25 50 75 100 125

T

, TEMPERATURE (°C)

amb

Figure 4. Detection threshold versus temperature.

3.0
VDS = 0.5 V

2.5

2.0

1.5

SL01345

, DETECTION HYSTERESIS (mV)V

50

S(HYS)

0

–50 –25 0 25 50 75 100 125

T

, TEMPERATURE (°C)

amb

Figure 5. Detection hysteresis versus temperature.

5.0
T

= 25 °C

AMB

TYPICAL CHARACTERISTIC.

4.0

DETECTION AND RELEASE
VOLTAGE POINTS DEPEND ON
THE SPECIFIC DEVICE TYPE.

3.0

2.0

, OUTPUT VOLTAGE (V)V

OUT

1.0

0

0 1.0 2 .0 3.0 4.0 5.0 6.0

VDD, SUPPLY VOLTAGE (V)

V

S(HYS)

SL

DETECTION (V )

Figure 7. Output voltage versus supply voltage

SL01346

SH

RELEASE (V )

SL01348

1.0

, OUTPUT FET CURRENT (mA)I

DS

0.5

0

–50 –25 0 25 50 75 100 125

N-CHANNEL

T

, AMBIENT TEMPERATURE (°C)

amb

Figure 6. Output FET current versus temperature.

0.6
T

= 25 °C

AMB

0.5

µ

0.4

0.3

0.2

, SUPPLY CURRENT ( A)I

DD

0.1

0

1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 100
VDD, SUPPLY VOLTAGE (V)

Figure 8. Supply current versus supply voltage

SL01317

SL01349

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Philips Semiconductors Product data

SA56606-XXCMOS system reset

5

10

T

= 25 °C

AMB

(SEE FIGURES 10 AND 11)

4

10

3

10

, PROPAGATION DELAY ( s)t µ

2

10

PLH

, t

PHL

1

10

–5

10

t

PHL

t

PLH

–4

10

–3

10

10

CL, OUTPUT LOAD CAPACITANCE (µF)

Figure 9. Propagation delay versus output load C

INPUT SIGNAL

OUTPUT SIGNAL

t

–2

–1

10

PHL

t

PLH

SL01350

Figure 10. Propagation delay measurements

VS + 2.0 V

1.2 V

V

SS

7.0 V

3.5 V

V

SS

SL01351

V

INPUT

SIGNAL

DD

SA56606-XX

V

SS

RPU = 100 kΩ

C

Figure 11. Propagation delay measurement circuit

7.0 V

OUTPUT

= 10 pF to 0.1 µF

L

V

SS

SL01322

2001 Jun 19

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Philips Semiconductors Product data

SA56606-XXCMOS system reset

TECHNICAL DESCRIPTION

The SA56606-XX is a CMOS device designed to provide power
source monitoring and a system reset function in the event the
supply voltage sags below an acceptable level for the system to
reliably operate. The device is designed to generate a compatible
reset signal for a wide variety of microprocessor and logic systems.
The SA56606 can operate at voltages up to 12 volts. The series
includes several versions providing precision threshold voltage reset
values of 2.0, 2.7, 2.8, 2.9, 3.0, 3.1, 4.2, 4.6 and 4.7 V . The reset
threshold incorporates a typical hysteresis of (V

× 0.05) volts to

S

prevent erratic resets from being generated.
The output of the SA56606 utilizes a low side open drain topology,

which requires an external pull-up resistor (R

) to the VDD power

PU

source. Although this may be regarded as a disadvantage, it is an
advantage in many sensitive applications because the open drain
output cannot source reset current to a microprocessor when both
are operated from a common supply. For this reason the SA56606
offers a safe inter-connect to a wide variety of microprocessors.

The SA56606 operates at very low supply currents, typically

0.25 µA, while offering a high precision of threshold detection (±2%).
Figure 12 is a functional block diagram of the SA56606. The internal
reference source voltage (V

) is typically 0.8 V over the operating

REF

temperature range. The reference voltage is connected to the
non-inverting input of the threshold comparator, while the inverting
input monitors the supply voltage through a resistor divider network
made up of R
drives the output Open Drain N-Channel FET of the device TR

, R2, and R3. The output of the threshold comparator

1

1

).
When the supply voltage sags to the threshold detection voltage, the
resistor divider network supplies a voltage to the inverting input of
the threshold comparator, which is less than that of V

REF

, causing
the output of the comparator to go to a HIGH output state. This
causes the low side N-Channel FET to be active ON, pulling its
drain voltage to a LOW state. The device adheres to a true
input/output logic protocol: the output goes LOW when input is LOW
(below threshold) and output goes HIGH when input is HIGH (above
threshold).

The low side N-Channel FET (TR

) establishes threshold hysteresis

2

by turning ON whenever the threshold comparator’s output goes to
a HIGH state (when V
turning ON causes additional current to flow through resistors R
R

, causing the inverting input of the threshold comparator to be

2

sags to or below the threshold level). TR2’s

DD

1

and

pulled even lower. For the comparator to reverse its output polarity
and turn OFF TR2, the VDD source voltage must overcome this
additional pull-down voltage present on the comparator’s inverting
input. The differential voltage required to do this establishes the
hysteresis voltage of the sensed threshold voltage. Typically it is
(V

× 0.05) volts.

S

When the V
Threshold (V
very near ground potential. As the V
(V

< VSL) to VSH or higher, the Reset is released and the output

DD

follows V

voltage sags, and is at or below the Detection

DD

), the device will assert a Reset LOW output at or

SL

. Conversely, decreases in VDD from (VDD > VSL) to V

DD

voltage rises from

DD

SL

or lower cause the output to be pulled to ground.
Hysteresis Voltage = Release Voltage – Detection Threshold Voltage

V

= VSH – V

HYS

SL

where:

VSH = VSL + V
VSL = V

When V

DD

REF(R1

drops to levels below the minimum operating voltage,

HYS

≅ V

REF(R1

+ R2) / R

+ R2 + R3) / (R2 + R3)

2

typically less than 0.95 volts, the output is undefined and output
reset LOW assertion is not guaranteed. At this level of V
output will try to rise to V

The V

voltage is typically 0.8 V . The devices are fabricated using

REF

DD

.

a high resistance CMOS process and utilize high resistance R

values requiring very small amounts of current. This

and R

3

DD

the

1

, R2,

combination achieves very efficient low power performance over the
full operating temperature.

2001 Jun 19

V

DD

V

SS

2

SA56606-XX

R

1

V

REF

R

3

R

2

TR

R

3

2

TR

1

SL01323

V

OUT

1

Figure 12. Functional diagram.

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Philips Semiconductors Product data

SA56606-XXCMOS system reset

Timing diagram

The timing diagram shown in Figure 13 depicts the operation of the
device. Letters A–J on the TIME axis indicate specific events.

A: At ‘A’, V
increases but abruptly decreases when V

begins to increase. Also the V

DD

voltage initially

OUT

reaches the level

DD

(approximately 0.8 V) that activates the internal bias circuitry and
RESET

is asserted.

B: At ‘B’, V
device releases the hold on the V

reaches the threshold level of VSH. At this point the

DD

reset. The Reset output V

OUT

OUT

tracks VDD as it rises above VSH (assuming the reset pull-up resistor
R

is connected to VDD). In a microprocessor based system these

PU

events release the reset from the microprocessor, allowing the
microprocessor to function normally.

C–D: At ‘C’, V

begins to fall, causing V

DD

to follow. V

OUT

DD

continues to fall until the VSL undervoltage detection threshold is
reached at ‘D’. This causes a reset signal to be generated (V

OUT

Reset goes LOW).

D–E: Between ‘D’ and ‘E’, V
E: At ‘E’, V

the hold on the V
rises above V

F–G: At ‘F’, V
causing V

rises to the VSH. Once again, the device releases

DD

reset. The Reset output V

OUT

.

SH

is above the upper threshold and begins to fall,

DD

to follow it. As long as VDD remains above the VSH,

OUT

no reset signal will be triggered. Before V
begins to rise, causing V

starts rising.

DD

falls to the VSH, it

to follow it. At ‘G’, VDD returns to

OUT

DD

normal.
H: At event ‘H’ V

falls until the VSL undervoltage detection

DD

threshold point is reached. At this level, a RESET
generated and V

J: At ‘J’ the V
bias is unable to maintain a V
less than 0.8 V. As V

goes LOW.

OUT

voltage has decreased until normal internal circuit

DD

decreases further, V

DD

reset. As a result, VDD may rise to

OUT

OUT

decreases to zero.

tracks VDD as it

OUT

signal is

reset also

V

SH

V

SL

V

DD

0

V

OUT

0

AB C GHJDE F

TIME

Figure 13. Timing diagram.

SL01354

∆V

S

2001 Jun 19

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Philips Semiconductors Product data

SA56606-XXCMOS system reset

Application information

V

DD

SUPPLY

GND

V

DD

SA56606-XX

V

SS

R

11

R

PU

CPU

V

OUT

RESET

V

SUPPLY

R

12

CURRENT CHANGES

A

V

DD

SA56606-XX

V

SS

R

PU

OUTPUT

SL01371

Figure 14. Conventional reset application.

The Power ON Reset Circuit shown in Figure 15 is an example of
how to obtain a stable reset condition upon power-up. If the power
supply voltage rises abruptly, the RESET
when V

is below the minimum operating voltage (0.95 V). To

DD

may go HIGH momentarily

overcome this, a resistor (R) is placed between positive supply and
the V

pin with a capacitor from the VDD pin to ground.

DD

V

DD

SUPPLY

R

GND

D

SA56606-XX

V

DD

C

V

SS

R

PU

CPU

V

OUT

RESET

SL01372

Figure 15. Power ON reset circuit.

SL01373

Figure 16. High impedance supply operating problems.

Significant voltage variations of V

may occur when the device is

DD

operated from high impedance power sources. When the device
asserts or releases a reset, V
of the voltage drop developed across R
variations through the resistor R
impedance). If the V

variations are large, such that they exceed

DD

variations are produced as a result

DD

11

due to the current

11

(representing the supply

the Detection Hysteresis, the output of the device can oscillate from
a HIGH state to a LOW state. The user should avoid using high
impedance V

sources to prevent such situations.

DD

2001 Jun 19

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Philips Semiconductors Product data

SA56606-XXCMOS system reset

Test circuits

A

V

DD

V

DD

V

SA56606-XX

V

SS

V

Figure 17. Test circuit 1.

OUT

R

100 kΩ

SL01374

PU

V

DD

V

Figure 18. Test circuit 2.

V

DD

SA56606-XX

V

SS

V

OUT

A

V

SL01375

V

DS

PACKING METHOD

The SA56606-XX is packed in reels, as shown in Figure 19.

GUARD

BAND

BARCODE

LABEL

BOX

TAPE

Figure 19. Tape and reel packing method

REEL
ASSEMBLY

TAPE DETAIL

COVER TAPE

CARRIER TAPE

SL01305

2001 Jun 19

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Philips Semiconductors Product data

SA56606-XXCMOS system reset

SOT23-5: plastic small outline package; 5 leads; body width 1.5 mm

2001 Jun 19

1.35

1.2

1.0

0.025

0.55

0.41

0.22

0.08

3.00

2.70

1.70

1.50

0.55

0.35

11

Philips Semiconductors Product data

SA56606-XXCMOS system reset

Data sheet status

Product

Data sheet status

Objective data

Preliminary data

Product data

[1] Please consult the most recently issued datasheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on

the Internet at URL http://www.semiconductors.philips.com.

[1]

status

Development

Qualification

Production

[2]

Definitions

This data sheet contains data from the objective specification for product development.
Philips Semiconductors reserves the right to change the specification in any manner without notice.

This data sheet contains data from the preliminary specification. Supplementary data will be
published at a later date. Philips Semiconductors reserves the right to change the specification
without notice, in order to improve the design and supply the best possible product.

This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply.
Changes will be communicated according to the Customer Product/Process Change Notification
(CPCN) procedure SNW-SQ-650A.

Definitions

Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For

detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one

or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or
at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended
periods may affect device reliability.

Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips
Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or
modification.

Disclaimers

Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can

reasonably be expected to result in personal injury . Philips Semiconductors customers using or selling these products for use in such applications
do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless
otherwise specified.

Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Sunnyvale, California 94088–3409
Telephone [phone]

 Copyright Philips Electronics North America Corporation 2001

All rights reserved. Printed in U.S.A.

Date of release: 06-01

Document order number: 9397 750 08451

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2001 Jun 19

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