Datasheet sa5222 DATASHEETS (Philips)

Philips Semiconductors Product specification

SA5222Low-power FDDI transimpedance amplifier

1

1995 Apr 26 853-1582 15170

DESCRIPTION

The NE/SA5222 is a low-power, wide-band, low noise transimpedance amplifier with differential outputs, optimized for signal recovery in FDDI fiber optic receivers. The part is also suited for many other RF and fiber optic applications as a general purpose gain block.

FEATURES

•Extremely low noise:

z



D Package

IN

GND

2

OUT

V

CC2

1

2

3

4

8

7

6

5

OUT

GND

1

V

CC1

GND

1

SD00360

Figure 1. Pin Configuration

APPLICATIONS

•FDDI preamp

•Current-to-voltage converters

•Wide-band gain block

•Medical and scientific instrumentation

•Sensor preamplifiers

•Single-ended to differential conversion

•Low noise RF amplifiers

•RF signal processing

ORDERING INFORMATION

DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #

8-Pin Plastic Small Outline (SO) package

-40 to +85°C

SA5222D SOT96-1

ABSOLUTE MAXIMUM RATINGS

SYMBOL PARAMETER RATING UNITS

V

CC1,2

Power supply voltage 6 V

T

A

Ambient temperature range -40 to +85

°C

T

J

Junction temperature range -55 to +150

°C

T

STG

Storage temperature range -65 to +150

°C

P

D

Power dissipation TA = 25oC (still air)

1

0.78 W

I

INMAX

Maximum input current 5 mA

NOTE:

1. Maximum power dissipation is determined by the operating ambient temperature and the thermal resistance θJA = 158oC/W. Derate

6.2mW/

°C above 25°C.

RECOMMENDED OPERATING CONDITIONS

SYMBOL PARAMETER RATING UNITS

V

CC1,2

Power supply voltage 4.5 to 5.5 V

T

A

Ambient temperature range: SA grade -40 to +85

°C

T

J

Junction temperature range: SA grade -40 to +105

°C

2.0pAH

•Single 5V supply

•Low supply current: 9mA

•Large bandwidth: 165MHz

•Differential outputs

•Low output offset

•Low input/output impedances

•High power-supply-rejection ratio: 55dB

•Tight transresistance control

•High input overload: 115µA

•ESD protected

PIN DESCRIPTION

Philips Semiconductors Product specification

SA5222Low-power FDDI transimpedance amplifier

1995 Apr 26

2

DC ELECTRICAL CHARACTERISTICS

Typical data and Min and Max limits apply at TA = 25°C, and V

CC1

= V

CC2

= +5V, unless otherwise specified.

SA5222

SYMBOL

PARAMETER

TEST CONDITIONS

Min Typ Max

UNIT

V

IN

Input bias voltage 1.3 1.55 1.8 V

V

O

±

Output bias voltage 2.9 3.2 3.5 V

V

OS

Output offset voltage 0 ±100 mV

I

CC

Supply current 6 9 12 mA

I

OMAX

Output sink/source current 1.5 2 mA

I

IN

Input current (2% linearity) Test circuit 5, Procedure 2 ±60 ±90

µA

I

INMAX

Maximum input current overload threshold Test circuit 5, Procedure 4 ±80 ±115

µA

V

OMAX

Maximum differential output voltage swing R

L

= ∞, Test Circuit 5, Procedure 3 3.6 V

P-P

AC ELECTRICAL CHARACTERISTICS

Typical data and Min and Max limits apply at TA = 25°C and V

CC1

= V

CC2

=+5V, unless otherwise specified.

SA5222

SYMBOL

PARAMETER

TEST CONDITIONS

Min Typ Max

UNIT

R

T

Transresistance (differential output)

DC tested, RL = ∞, Test Circuit 5,

Procedure 1

13.3 16.6 19.9 kΩ

R

O

Output resistance (differential output)

DC tested 30 60 90 Ω

R

T

Transresistance (single-ended output)

DC tested, RL = ∞

6.65 8.3 9.95 kΩ

R

O

Output resistance (single-ended output)

DC tested 15 30 45 Ω

f

3dB

Bandwidth (-3dB)

1

Test Circuit 1 110 140 MHz

R

IN

Input resistance 150

Ω

C

IN

Input capacitance

2

1

pF

∆R/∆V Transresistance power supply sensitivity V

CC1

= V

CC2

= 5 ±0.5V 1.0 %/V

∆R/∆T

Transresistance ambient temperature sensitivity

∆TA = T

A MAX

- T

A MIN

0.07

%/oC

I

IN

RMS noise current spectral density (referred to input)

Test Circuit 2, f = 10MHz 2.0

p

Integrated RMS noise current over the bandwidth (referred to input)

Test circuit 2,

∆f = 50MHz

15

CS = 0pF ∆f = 100MHz 25

∆f = 150MHz 36

I

T

CS = 1pF ∆f = 50MHz 17

nA

∆f = 100MHz 35 ∆f = 150MHz 55

PSRR Power supply rejection ratio DC Tested, ∆VCC = ±0.5V –55 dB PSRR Power supply rejection ratio

3

f = 1.0MHz, Test Circuit 3 –34 dB

I

INMAX

Maximum input amplitude for output duty cycle of 50 ±5%

4

Test circuit 4 ±120 µA

tr, tfRise and fall times 10 – 90% 2.2 ns

t

D

Group delay f = 10MHz 2.2 ns

NOTES:

1. Bandwidth is tested into 50Ω load. Bandwidth into 1kΩ load is approximately 165MHz.

2. Does not include Miller-multiplied capacitance of input device.

3. PSRR is output referenced and is circuit board layout dependent at higher frequencies. For best performance use a RF filter in V

CC

line.

4. Monitored in production via linearity and over load tests.

I

T



A Hz

nA

Philips Semiconductors Product specification

SA5222Low-power FDDI transimpedance amplifier

1995 Apr 26

3

TEST CIRCUITS

Test Circuit 1: Bandwidth

NETWORK ANALYZER

S-PARAMETER TEST SET

PORT1 PORT2

V

CC

20

.1uF

20

.1uF

50

Z

O

= 50Ω

OUT

IN DUT

0.1uF

R=1k

50

GND

1

SINGLE-ENDED

DIFFERENTIAL

RO = Z

O

1 + S22 1 - S22

-20

RO = 2Z

O

1 + S22 1 - S22

-40

GND

2

RT+

V

OUT

V

IN

R + 4 @ S21@ RRT+

V

OUT

V

IN

R + 2 @ S21@ R

Z

O

= 50Ω

SD00361

Figure 2. Test Circuit1

Test Circuit 2: Noise

SPECTRUM ANALYZER

V

CC

20

OUT

IN DUT

GND

2

GND

1

NE5209

50Ω

.1µF

10µF

C

S

50Ω

SD00362

Figure 3. Test Circuit2

TEST CIRCUITS (continued)

Test Circuit 3: PSRR

NETWORK ANALYZER

S-PARAMETER TEST SET

PORT1 PORT2

V

CC

20Ω

.1uF

20Ω

.1uF

OUT

IN DUT

GND

2

GND

1

50Ω

CAL

UNBAL.

0.1uF

NC

50Ω

BIAS TEE

5V

NHO300HB

TRANSFORMER

CONVERSION

LOSS = 9dB

100Ω BAL.

SD00363

Figure 4. Test Circuit4

Philips Semiconductors Product specification

SA5222Low-power FDDI transimpedance amplifier

1995 Apr 26

4

TEST CIRCUITS (continued)

Test Circuit 4: Duty Cycle Distortion

PULSE GEN

OUT

DUT

OSCILLOSCOPE

A

B

Meaurement done using differential wave forms

5V

0.1uF

.1µF

GND

1

GND

2

ZO = 50Ω

Z

O

= 50Ω

IN

1kΩ

50Ω

OFFSET

SD00364

Figure 5. Test Circuit4

TEST CIRCUITS (continued)

Test Circuit 5: DC Tests

Typical V

O

(Differential) vs I

IN

SA5222 TEST CONDITIONS

Procedure 1

R

T

measured at 30µA

R

T

= (VO1 - VO2) / (+30µA - (-30µA)

Where: V

O1

Measure at IIN = +30µA

V

O2

Measured at IIN = -30µA

2.25

1.80

1.35

0.90

0.45

0.00

–0.45

–0.90

–1.35

–1.80

–2.25

–200 –160 –120 –80 –40 0 40 80 120 160 200

V

O8

V

O6

V

O4

V

O2

V

O1

V

O

3

V

O

5

V

O

7

V

O

S

CURRENT INPUT (µA)

DIFFERENTIAL OUTPUT VOLTAGE (V)

OUT +

OUT –

5V

I

IN (µA)

VO (VOLTS)

+

–

GND

1

GND

2

Procedure 2

Procedure 3 Procedure 4

Linearity = 1 - ABS((V

OA

- VOB / (VO3 - VO4))

Where: V

O3

Measured at IIN = +60µA

V

O4

Measured at IIN = -60µA

V

OA

= RT x (+60µA) + V

OS

VOB = RT x (-60µA) + V

OS

V

OMAX

= VO7 - V

O8

Where: VO7 Measured at IIN = +130µA

VO8 Measured at IIN = -130µA

I

INMAX

Test Pass Conditions:

V

O7

- VO5 > 50mV and VO6 - VO8 < 50mV

Where: VO5 Measured at IIN = +80µA

V

O6

Measured at IIN = -80µA

V

O7

Measured at IIN = +130µA

V

OB

Measured at IIN = -130µA

SD00365

Figure 6. Test Circuit5

Philips Semiconductors Product specification

SA5222Low-power FDDI transimpedance amplifier

1995 Apr 26

5

6

7

8

9

10

4.5 5 5.5 SUPPLY VOLTAGE (V)

25°C

85°C

–40°C

SUPPLY CURRENT (mA)

SD00366

Figure 7. ICC vs. VCC and Temperature

1.2

1.3

1.4

1.5

1.6

1.7

1.8

4.5 5 5.5 SUPPLY VOLTAGE (V)

INPUT VOLTAGE (V)

25°C

85°C

–40°C

SD00546

Figure 8. Input Voltage vs. VCC and Temperature

2

2.2

2.4

2.6

2.8

3

3.2

3.4

3.6

3.8

4.5 5 5.5 SUPPLY VOLTAGE (V)

OUTPUT VOLTAGE (V)

PIN 6 OUTPUT

25°C

85°C

–40°C

SD00547

Figure 9. Output Voltage vs. VCC and Temperature

0

1

2

3

4

5

–200 –100 0 100 200

INPUT CURRENT (µA)

T

A

= +25°C

V

CC

= 5V

OUT

VOLTAGE (V)

SD00548

Figure 10. Differential Output Voltages vs. Input Current

–2.5

–1.5

–0.5

0.5

1.5

2.5

–200 –100 0 100 200

4.5V

5.5V

T

A

= +25°C

VOLTAGE (V)

INPUT CURRENT (µA)

SD00549

Figure 11. Differential Output Voltage vs Input Current and V

CC

–2.5

–1.5

–0.5

0.5

1.5

2.5

–200 –100 0 100 200

INPUT CURRENT (µA)

85°C

–40°C

V

CC

= 5V

VOLTAGE (V)

SD00550

Figure 12. Diff. Output Voltage vs. Input Current and Temp.

Philips Semiconductors Product specification

SA5222Low-power FDDI transimpedance amplifier

1995 Apr 26

6

12

13

14

15

16

17

18

4.5 5 5.5 SUPPLY VOLTAGE (V)

25°C

85°C

–40°C

∆Iin = ±20µA

TRANSRESISTANCE (KOHMS)

SD00367

Figure 13. Differential Transresistance vs. VCC and

Temperature

10

20

30

40

50

4.5 5 5.5 SUPPLY VOLTAGE (V)

OUTPUT RESISTANCE (OHMS)

–40°C

85°C

25°C

0

SD00551

Figure 14. Output Resistance vs. VCC and Temperature

0

5

10

15

20

25

30

35

40

45

50

4.5 5 5.5 SUPPLY VOLTAGE (V)

25°C

85°C

–40°C

OUTPUT OFFSET (mV)

SD00552

Figure 15. Output Offset Voltage vs. VCC and Temperature

–5

0

5

10

15

1 10 100 300

FREQUENCY (MHz)

V

CC

= 5V

T

A

= +25°C

PIN 6

PIN 7

S (dB)

21

SD00553

Figure 16. Insertion Gain vs. Frequency

–5

0

5

10

15

1 10 100 300

FREQUENCY (MHz)

TA = +25°C

PIN 6 OUTPUT

5.5V

4.5V

S (dB)

21

SD00554

Figure 17. Insertion Gain vs. Frequency and V

CC

–5

0

5

10

15

1 10 100 300

FREQUENCY (MHz)

V

CC

= 5V

PIN 6 OUTPUT

–40°C

+85°C

S (dB)

21

SD00555

Figure 18. Insertion Gain vs. Frequency and Temperature

Philips Semiconductors Product specification

SA5222Low-power FDDI transimpedance amplifier

1995 Apr 26

7

–200

–100

0

100

200

1 10 100 300

FREQUENCY (MHz)

V

CC

= 5V

T

A

= +25°C

PIN 6 OUTPUT

PIN 7 OUTPUT

S PHASE (DEG)

21

SD00368

Figure 19. Phase vs. Frequency

0

1

2

3

4

5

6

7

8

1 10 100 300

FREQUENCY (MHz)

V

CC

= 5V

T

A

= +25°C

PIN 6 OUTPUT

0.1µF COUPLING CAP’s

S GROUP DELAY (ns)

21

SD00556

Figure 20. Group Delay vs. Frequency

–5

15

35

55

75

95

115

1 10 100 300

FREQUENCY (MHz)

V

CC

= 5V

T

A

= +25°C

PIN 6

PIN 7

Z MAGNITUDE (OHMS)

OUT

SD00557

Figure 21. Output Impedance vs. Frequency

0

5

10

15

20

25

30

35

40

45

50

110

170

140

FREQUENCY

VCC = 5V

50

Ω

Load

TA = 25°C

300 PARTS FROM 3 WAFERS

BANDWIDTH (MHz)

SD00558

Figure 22. –3dB Bandwidth Distribution

VCC = 5V

T

A

= +25°C

PSRR (dB)

–60

–4 0

–20

0

0.1 1 10 100 300 FREQUENCY (MHz)

DIFFERENTIAL OUTPUT

SD00559

Figure 23. Power–Supply Rejection Ratio vs. Frequency

0

1

2

3

4

5

6

1 10 100 300

FREQUENCY (MHz)

V

CC

= 5V

T

A

= +25°C

INPUT NOISE (pA/ Hz)√

8

OUTPUT NOISE DIVIDED BY 10MHz GAIN

C

S

= 1pF

CS = 0pF

7

SD00560

Figure 24. Input Noise Spectral Density vs. Frequency

Philips Semiconductors Product specification

SA5222Low-power FDDI transimpedance amplifier

1995 Apr 26

8

1

2

3

4

8

7

6

5

VCC1

GND 1

VCC2

GND 2

SD00505

IN

OUT

Figure 25. SA5222 Bonding Diagram

Die Sales Disclaimer

Due to the limitations in testing high frequency and other parameters at the die level, and the fact that die electrical characteristics may shift after packaging, die electrical parameters are not specified and die are not guaranteed to meet electrical characteristics (including temperature range) as noted in this data sheet which is intended only to specify electrical characteristics for a packaged device.

All die are 100% functional with various parametrics tested at the wafer level, at room temperature only (25°C), and are guaranteed to be 100% functional as a result of electrical testing to the point of wafer sawing only. Although the most modern processes are utilized for wafer sawing and die pick and place into waffle pack

carriers, it is impossible to guarantee 100% functionality through this process. There is no post waffle pack testing performed on individual die.

Since Philips Semiconductors has no control of third party procedures in the handling or packaging of die, Philips Semiconductors assumes no liability for device functionality or performance of the die or systems on any die sales.

Although Philips Semiconductors typically realizes a yield of 85% after assembling die into their respective packages, with care customers should achieve a similar yield. However, for the reasons stated above, Philips Semiconductors cannot guarantee this or any other yield on any die sales.