Datasheet sa5219 DATASHEETS (Philips)

INTEGRATED CIRCUITS

SA5219

Wideband variable gain amplifier

Product specification Replaces data of 1993 Dec 10

IC17 Data Handbook

Philips Semiconductors

1997 Nov 07

Philips Semiconductors Product specification

SA5219Wideband variable gain amplifier

DESCRIPTION

The SA5219 represents a breakthrough in monolithic amplifier design featuring several innovations. This unique design has combined the advantages of a high speed bipolar process with the proven Gilbert architecture.

The SA5219 is a linear broadband RF amplifier whose gain is controlled by a single DC voltage. The amplifier runs off a single 5 volt supply and consumes only 40mA. The amplifier has high impedance (1kΩ) differential inputs. The output is 50Ω differential. Therefore, the 5219 can simultaneously perform AGC, impedance transformation, and the balun functions.

The dynamic range is excellent over a wide range of gain setting. Furthermore, the noise performance degrades at a comparatively slow rate as the gain is reduced. This is an important feature when building linear AGC systems.

FEA TURES

•700MHz bandwidth

•High impedance differential input

•50Ω differential output

•Single 5V power supply

•0 - 1V gain control pin

•>60dB gain control range at 200MHz

•26dB maximum gain differential

•Exceptional V

CONTROL

/ V

GAIN

linearity

•7dB noise figure minimum

•Full ESD protection

•Easily cascadable

PIN CONFIGURATION

N, D PACKAGES

1

V

CC1

2

GND

1

3

IN

A

4

GND

1

5

IN

B

6

GND

1

7

V

BG

8

V

AGC

Figure 1. Pin Configuration

APPLICATIONS

•Linear AGC systems

•Very linear AM modulator

•RF balun

•Cable TV multi-purpose amplifier

•Fiber optic AGC

•RADAR

•User programmable fixed gain block

•Video

•Satellite receivers

•Cellular communications

16

V

15

GND

14

OUT

13

GND

12

OUT

11

GND

10

GND

9

GND

SR00273

CC2

2

A

2

B

2 2

2

ORDERING INFORMATION

Description Temperature Range Order Code DWG #

16-Pin Plastic Small Outline (SO) package -40 to +85°C SA5219D SOT109-1 16-Pin Plastic Dual In-Line package (DIP) -40 to +85°C SA5219N SOT38-4

1997 Nov 07 853-1724 18663

2

Philips Semiconductors Product specification

SYMBOL

PARAMETER

TEST CONDITIONS

UNIT

SA5219Wideband variable gain amplifier

ABSOLUTE MAXIMUM RATINGS

SYMBOL PARAMETER RATING UNITS

V

CC

P

D

T

JMAX

T

STG

NOTES:

1. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance, θ 16-Pin DIP: θ 16-Pin SO: θ

RECOMMENDED OPERATING CONDITIONS

SYMBOL PARAMETER RATING UNITS

V

CC

T

A

T

J

Supply voltage -0.5 to +8.0 V Power dissipation, TA = 25oC (still air)

16-Pin Plastic DIP 16-Pin Plastic SO

1

1450 1100

mW

mW Maximum operating junction temperature 150 Storage temperature range -65 to +150

:

= 85°C/W

JA

= 110°C/W

JA

Supply voltage V

CC1

JA

= V

= 4.5 to 7.0V V

CC2

Operating ambient temperature range

SA Grade -40 to +85

Operating junction temperature range

SA Grade -40 to +105

°C °C

DC ELECTRICAL CHARACTERISTICS

TA = 25oC, V

R

V

I

A A

R

OUT

V

OUT

CC1

CC

V V IN

OS

IN

PSRR Output offset supply rejection ratio 18 45 dB

V

BG

R

BG

V

AGC

I

BAGC

= V

CC2

= +5V, V

= 1.0V , unless otherwise specified.

AGC

LIMITS

MIN TYP MAX

Supply current DC tested 36 43 50 mA Voltage gain (single-ended in/single-ended out) DC tested, RL = 10kΩ 16 19 22 dB Voltage gain (single-ended in/differential out) DC tested, RL = 10kΩ 22 25 28 dB Input resistance (single-ended) DC tested at ±50µA 0.8 1.2 1.6 kΩ

Output resistance (single-ended) DC tested at ±1mA 35 60 80 Ω Output offset voltage (output referred) +20 ±150 mV DC level on inputs 1.6 2.0 2.4 V DC level on outputs 1.9 2.4 2.9 V

Bandgap reference voltage

4.5V<VCC<7V RBG = 10kΩ

1.2 1.32 1.45 V

Bandgap loading 2 10 AGC DC control voltage range 0-1.3 V

AGC pin DC bias current 0V<V

<1.3V -0.7 -6 µA

AGC

kΩ

1997 Nov 07

3

Philips Semiconductors Product specification

SYMBOL

PARAMETER

TEST CONDITIONS

UNIT

V

SA5219Wideband variable gain amplifier

AC ELECTRICAL CHARACTERISTICS

TA = 25oC, V

BW -3dB bandwidth 700 MHz

GF Gain flatness DC - 500MHz +0.4 dB

V

IMAX

OMAX

NF Noise figure (unmatched configuration) RS = 50Ω, f = 50MHz 9.3 dB

V

IN-EQ

S12 Reverse isolation f = 100MHz -60 dB

∆G/∆V

∆G/∆T Gain temperature sensitivity RL = 50Ω 0.013

C

IN

BW

AGC

P

O-1dB

P

I-1dB

IP3

OUT

IP3

IN

∆G

AB

NOTE:

1. With R occurs at input for single-ended gain < 6dB and at output for single-ended gain > 6dB.

SA5219 APPLICATIONS

The SA5219 is a wideband variable gain amplifier (VGA) circuit which finds many applications in the RF, IF and video signal processing areas. This application note describes the operation of the circuit and several applications of the VGA. The simplified equivalent schematic of the VGA is shown in Figure 2. Transistors Q1-Q6 form the wideband Gilbert multiplier input stage which is biased by current source I1. The top differential pairs are biased from a buffered and level-shifted signal derived from the V and the RF input appears at the lower differential pair. The circuit topology and layout offer low input noise and wide bandwidth. The second stage is a differential transimpedance stage with current feedback which maintains the wide bandwidth of the input stage. The output stage is a pair of emitter followers with 50Ω output impedance. There is also an on-chip bandgap reference with buffered output at 1.3V, which can be used to derive the gain control voltage.

Both the inputs and outputs should be capacitor coupled or DC isolated from the signal sources and loads. Furthermore, the two inputs should be DC isolated from each other and the two outputs should likewise be DC isolated from each other. The SA5219 was designed to provide optimum performance from a 5V power source. However, there is some range around this value (4.5 - 7V) that can be used.

The input impedance is about 1kΩ. The main advantage to a differential input configuration is to provide the balun function.

= V

CC1

= +5.0V, V

CC2

= 1.0V , unless otherwise specified.

AGC

LIMITS

MIN TYP MAX

Maximum input voltage swing (single-ended) for linear operation

Maximum output voltage swing (single-ended) for linear operation

1

RL = 50Ω 400 mV

1

RL = 1kΩ 1.9 V

Equivalent input noise voltage spectral density f = 100MHz 2.5

Gain supply sensitivity (single-ended) 0.3 dB/V

CC

200 mV

nV/√Hz

dB/°C

Input capacitance (single-ended) 2 pF

-3dB bandwidth of gain control function 20 MHz 1dB gain compression point at output f = 100MHz -3 dBm

1dB gain compression point at input

Third-order intercept point at output

Third-order intercept point at input

f = 100MHz, V

Gain match output A to output B f = 100MHz, V

> 1kΩ, overload occurs at input for single-ended gain < 13dB and at output for single-ended gain > 13dB. With RL = 50Ω, overload

L

=0.1V

>0.5V

<0.5V

AGC

= 1V 0.1 dB

AGC

-10 dBm

+13 dBm

+5 dBm

Otherwise, there is an advantage to common mode rejection, a specification that is not normally important to RF designs. The source impedance can be chosen for two different performance characteristics: Gain, or noise performance. Gain optimization will be realized if the input impedance is matched to about 1kΩ. A 4:1 balun will provide such a broadband match from a 50Ω source. Noise performance will be optimized if the input impedance is matched to about 200Ω. A 2:1 balun will provide such a broadband

AGC

input

match from a 50Ω source. The minimum noise figure can then be expected to be about 7dB. Maximum gain will be about 23dB for a single-ended output. If the differential output is used and properly matched, nearly 30dB can be realized. With gain optimization, the noise figure will degrade to about 8dB. With no matching unit at the input, a 9dB noise figure can be expected from a 50Ω source. If the source is terminated, the noise figure will increase to about 15dB. All these noise figures will occur at maximum gain.

The SA5219 has an excellent noise figure vs gain relationship. With any VGA circuit, the noise performance will degrade with decreasing gain. The 5219 has about a 1.2dB noise figure degradation for each 2dB gain reduction. With the input matched for optimum gain, the 8dB noise figure at 23dB gain will degrade to about a 20dB noise figure at 0dB gain.

The SA5219 also displays excellent linearity between voltage gain and control voltage. Indeed, the relationship is of sufficient linearity that high fidelity AM modulation is possible using the SA5219. A

P-P

1997 Nov 07

4

Philips Semiconductors Product specification

SA5219Wideband variable gain amplifier

maximum control voltage frequency of about 20MHz permits video baseband sources for AM.

A stabilized bandgap reference voltage is made available on the SA5219 (Pin 7). For fixed gain applications this voltage can be resistor divided, and then fed to the gain control terminal (Pin 8). Using the bandgap voltage reference for gain control produces very stable gain characteristics over wide temperature ranges. The gain setting resistors are not part of the RF signal path, and thus stray capacitance here is not important.

The wide bandwidth and excellent gain control linearity make the SA5219 VGA ideally suited for the automatic gain control (AGC) function in RF and IF processing in cellular radio base stations, Direct Broadcast Satellite (DBS) decoders, cable TV systems, fiber optic receivers for wideband data and video, and other radio communication applications. A typical AGC configuration using the SA5219 is shown in Figure 3. Three SA5219s are cascaded with appropriate AC coupling capacitors. The output of the final stage drives the full-wave rectifier composed of two UHF Schottky diodes

V

CC

R

1

Q

V

0–1V

AGC

Q

1

2

+

–

IN

Q

5

B

IN

A

I

1

Q

3

4

Q

6

Figure 2. Equivalent Schematic of VGA

BAT17 as shown. The diodes are biased by R1 and R2 to V

CC

such that a quiescent current of about 2mA in each leg is achieved. An SA5230 low voltage op amp is used as an integrator which drives the V

pin on all three SA5219s. R3 and C3 filter the high

AGC

frequency ripple from the full-wave rectified signal. A voltage divider is used to generate the reference for the non-inverting input of the op amp at about 1.7V . Keeping D3 the same type as D1 and D2 will provide a first order compensation for the change in Schottky voltage over the operating temperature range and improve the AGC performance. R6 is a variable resistor for adjustments to the op amp reference voltage. In low cost and large volume applications this could be replaced with a fixed resistor, which would result in a slight loss of the AGC dynamic range. Cascading three SA5219s will give a dynamic range in excess of 60dB.

The SA5219 is a very user-friendly part and will not oscillate in most applications. However, in an application such as with gains in excess of 60dB and bandwidth beyond 100MHz, good PC board layout with proper supply decoupling is strongly recommended.

R

2

3

A1

R

4

BANDGAP

REFERENCE

Q

7

Q

8

I

2

OUT

B

Ω

50

I

3

V

BG

50

Ω

SR00274

OUT

A

1997 Nov 07

RF/IF INPUT

5219 5219

5219

R4

C4

–

5230

+

R6

Figure 3. AGC Configuration Using Cascaded SA5219s

5

V

CC

R1

R2

L1 L2

D1 D2

BAT 17

C3

R3

D3

R5

BAT 17

AGC OUTPUT

V

CC

SR00275

Philips Semiconductors Product specification

SA5219Wideband variable gain amplifier

10µF

V

IN

50Ω

0.1µF

1

V

CC1

2

GND1

IN

3

A

4

GND1

IN

5

B

GND1

6

7

V

BG

V

8

AGC

V

CC2

GND

OUT

GND2

OUT

GND2

16

15

2

14

A

13

12

B

11

10

9

0.1µF

OUT

+

V

CC

V

5VDC

A

B

SR00276

Figure 4. VGA AC Evaluation Board

+5V

5219

50Ω

OUTPUT

50Ω

SOURCE

MINI CIRCUITS 2:1 BALUN OR SIMILAR

50Ω

SOURCE

50Ω

SOURCE

1 : 2

+1V

V

AGC

50Ω

Figure 5. Broadband Noise Optimization

2:1 TURNS RATIO LC TUNED TRANSFORMER

+5V

5219

+1V

V

AGC

50Ω

Figure 6. Narrowband Noise Optimization

MINI CIRCUITS 4:1 BALUN OR EQUIVALENT

1 : 4

+5V

5219

+1V

V

50Ω

AGC

Figure 7. Broadband Gain Optimization

50Ω

OUTPUT

50Ω

OUTPUT

This circuit will exhibit about a 7dB noise figure with approximately 22dB gain.

This circuit will exhibit about a 7dB noise figure with approximately 22dB gain. Narrowband circuits have the advantage of greater stability, particularly when multiple devices are cascaded.

This circuit will exhibit about an 8dB noise figure with 24dB gain.

SR00277

SR00278

SR00279

1997 Nov 07

6

Philips Semiconductors Product specification

SA5219Wideband variable gain amplifier

SOURCE

50Ω

SOURCE

50Ω

SOURCE

50Ω

4:1 TURNS RATIO LC TUNED TRANSFORMER

+5V

5219

+1V

V

AGC

50Ω

Figure 8. Narrowband Gain Optimization

+5V

50Ω

5219

+1V

V

AGC

50Ω

Figure 9. Simple Amplifier Configuration

+5V

5219

50Ω

V

AGC

+1V

Figure 10. Unterminated Configuration

50Ω

OUTPUT

50Ω

OUTPUT

50Ω

OUTPUT

This circuit will exhibit approximately an 8dB noise figure and 25dB gain.

SR00280

The noise figure of this configuration will be approximately 15dB.

SR00281

With the 50Ω source left unterminated, the noise figure is 9dB.

SR00282

1997 Nov 07

50Ω

SOURCE

+5V

5219

V

AGC

V

BG

R

1

2

Figure 11. User-Programmable Fixed Gain Block

7

50Ω

OUTPUT

50Ω

Gain = 19dB + 20log10 V

R

2



AGC

=

R1 R

where V

and is in units of Volts, for V

AGC

2

≤ 1V

AGC

SR00283



V

BG

Philips Semiconductors Product specification

SA5219Wideband variable gain amplifier

CRYSTAL

FILTER

RF INPUT

50Ω

SOURCE

V

AGC

+5V

5219

V

AGC

.5V

R9R

Figure 12. AM Modulator

52195219

V

AGC

50Ω

+5V

MODULATING SIGNAL

FULL CARRIER AM (DSB)

50Ω

OUTPUT

All harmonic distortion products will be at least -50dBc over the audio spectrum.

5219

50Ω

V

AGC

SR00284

50Ω

OUTPUT

The high input impedance to the NE5219 makes matching to crystal filters relatively easy. The total delta gain of this system will approach 80dB. IF frequencies well into the UHF region can be configured with this type of architecture.

±

V

S

Figure 14. Test Set-up 1 (Used for all Graphs)

Figure 13. Receiver AGC IF Gain

V

CC

R

S

R

T

R

T

5219

±

(+5V, unless otherwise noted)

R

V

AGC

L

SR00286

GAIN CONTROL SIGNAL

SR00285

R

L

1997 Nov 07

8

Philips Semiconductors Product specification

SA5219Wideband variable gain amplifier

10

9

8

7

6

5

4

21

S Magnitude

3

2

1

0

0 0.6 10.80.40.2

DC Tested See test-setup 1

V

AGC

Figure 15. Gain vs V

10

9

8

7

6

5

4

21

S Magnitude

3

2

1

0

0 0.2 0.4 0.6 0.8

V

AGC

Figure 16. Insertion Gain vs V

T = 25°C

R

= RL = 50Ω

S

= ∞

R

t

f = 10MHz

(V)

and V

AGC

(V)

and Temperature

AGC

1.2

CC

RS = RL = 50Ω

= ∞

R

t

See test-setup 1

1 1.2

V

CC

V

CC

V

CC

SR00287

SR00288

= 5.5V = 5.0V = 4.5V

-55°C

+25°C

+125°C

20

19.5

19

18.5

18

17.5

17

16.5

Differential Voltage Gain (dB)

16

15.5

15

–100 50 1501000–50

Temperature (°C)

RS = 0Ω

= ∞

R

L

Rt = ∞

V

= 1.1V

AGC

See Test Setup 1

Figure 17. Voltage Gain vs Temperature and V

55

50

45

40

35

Supply Current (mA)

30

25

See test-setup 1

20

–100 –50 0 50 100

Temperature (°C)

Figure 18. Supply Current vs Temperature and V

5.5V

5.0V

4.5V

SR00289

CC

VCC = 7.0V

VCC = 6.0V

VCC = 5.0V VCC = 4.5V

150

SR00290

CC

1997 Nov 07

9

Philips Semiconductors Product specification

SA5219Wideband variable gain amplifier

1.5

1.45

1.4

1.35

1.3

1.25

1.2

1.15

Input Resistance (k )Ω

1.1

1.05

1

–100 –50 0 150100

Temperature (°C)

See test-setup 1

50

Figure 19. Input Resistance vs Temperature

2.5

DC Tested

V

CC

V

CC

SR00291

= 7.0V

= 4.5V

5

4.5

4

3.5

3

2.5

2

Output DC Voltage

1.5

1

0.5

0

–100 50 1501000–50

Temperature (°C)

DC Tested See test-setup 1

VCC = 7.0V

VCC = 6.0V

VCC = 5.0V

VCC = 4.5V

SR00293

Figure 21. Output Bias Voltage vs Temperature and V

2.5

CC

2

1.5

1

Input Bias Voltage (V)

0.5 DC Tested

See test-setup 1

0

–100 50 150100

0–50

Temperature (°C)

Figure 20. Input Bias Voltage vs Temperature

V

CC

V

CC

V

CC

V

CC

SR00292

= 7.0V = 6.0V = 5.0V = 4.5V

2

1.5

V

= 1.1V

1

DC OUTPUT SWING (V)

0.5

0

–100 –50 150

0 50 100 Temperature (°C)

AGC

= 10kΩ

R

L

DC Tested

See test-setup 1

Figure 22. DC Output Swing vs Temperature

SR00294

1997 Nov 07

10

Philips Semiconductors Product specification

SA5219Wideband variable gain amplifier

20

10

0

–10

21

S Magnitude (dB)

–20

–30

10 1500100

Frequency (MHz)

Figure 23. Insertion Gain vs Frequency and V

15

5.5V

1000

200mV

100mV

T = 25°C

R

S

R

t

See Test

Setup 1

SR00295

AGC

1.1V

0.8V

0.4V

50mV

25mV

= RL = 50Ω

= 50Ω

16

14

12

10

8

T = 25°C

V

6

21

S Magnitude (dB)

4

2

0

–100

0–50

Temperature (°C)

= 1.1V

AGC

= 50Ω

R

t

f = 10MHz

See Test Setup 1

50

Figure 25. Insertion Gain vs Temperature and V

0

VCC = 7.0V V

CC

V

CC

V

CC

150100

CC

= 6.0V = 5.0V = 4.5V

SR00297

4.5V 10

5

21

S Magnitude (dB)

0

–5

10

Frequency (MHz)

V

AGC

R

S

See Test Setup 1

100

T = 25°C

= 1.1V

= RL = 50Ω

R

= 50Ω

t

Figure 24. Insertion Gain vs Frequency and V

15001000

SR00296

CC

–5

–10

22

125°C

S (dB)

–15

25°C

-55°C

–20

–25

10

100

Frequency (MHz)

RS = RL = 50Ω

= 50Ω

R

t

See Test Setup 1

Figure 26. Output Return Loss vs Frequency

15001000

SR00298

1997 Nov 07

11

Philips Semiconductors Product specification

SA5219Wideband variable gain amplifier

0

–10

–20

–30

–40

–50

12

S Magnitude (dB)

–60

–70

–80

–90

10

Frequency (MHz)

R

See test-setup 1

100

T = 25°C

= RL = 50Ω

S

Rt = 50Ω

Figure 27. Reverse Isolation vs Frequency

0

–5

–10

–15

–1

P (dBm)

–20

–25

–30

0 0.2 1

0.4 0.6 0.8 V

AGC

T = 25°C

R

= RL = 50Ω

S

= 50Ω

R

t

f = 100MHz

See test-setup 1

(V)

Figure 28. 1dB Gain Compression vs V

SR00299

AGC

1000

OUTPUT

INPUT

SR00300

1500

15

10

5

3

IM Intercept (dBm)

0

–5

0 0.2 0.4 0.6 0.8

V

AGC

(V)

T = 25°C

R

= RL = 50Ω

S

= 50Ω

R

t

f = 100MHz

See test-setup 1

1

SR00301

Figure 29. Third-Order Intermodulation Intercept vs V

20

18

16

14

12

10

NF (dB)

8

6

4

2

0

0 0.2 1

0.4 0.6 0.8 V

Figure 30. Noise Figure vs V

See test-setup 1

(V)

AGC

T = 25°C

R

= RL = 50Ω

S

= ∞

R

t

f = 50MHz

SR00302

AGC

OUTPUT

INPUT

AGC

1997 Nov 07

12

Philips Semiconductors Product specification

SA5219Wideband variable gain amplifier

16

14

12

10

8

NF (dB)

6

4

2

0

10 100 1000

0Ω Termination

on INB

50Ω Termination

on INB

Frequency (MHz)

T = 25°C

V

= 1.1V

AGC

= RL = 50Ω

R

S

R

= ∞ on INA

t

See test-setup 1

Figure 31. Noise Figure vs Frequency

1.4

1.35

1.3

SR00303

VCC = 7.0V V

CC

V

CC

V

CC

= 6.0V = 5.0V = 4.5V

12

10

8

6

21

S Magnitude (dB)

4

2

0

–60 –10 40 90 140

Temperature (°C)

RS = RL = 50Ω

= 50Ω

R

t

R

= R2 = 10k

1

f = 100MHz

See Figure 10

Figure 33. Fixed Gain vs Temperature

SR00305

1.25

1.2

1.15

Bandgap Voltage (V)

1.1

1.05

1

–100

Temperature (°C)

0–50

Bandgap Load = 2kΩ

50

Figure 32. Bandgap Voltage vs Temperature and V

150100

SR00304

CC

1997 Nov 07

13

Philips Semiconductors Product specification

SA5219Wideband variable gain amplifier

+V

GND

CC

IN

OUT

A

B

TOP VIEW - SOLDER SIDETOP VIEW - COMPONENT SIDE

TOP VIEW - SOLDER SIDE

SR00306

A

GND

AGC

VBG

B

NE5219

Figure 34. VGA AC Evaluation Board Layout (DIP Package)

1997 Nov 07

AMP10101 / NE5219SO/DN8.90

BOTTOM VIEW - D Package

Figure 35. VGA AC Evaluation Board Layout (SO Package)

TOP VIEW - D Package

SR00307

14

Philips Semiconductors Product specification

SA5219Wideband variable gain amplifier

DIP16: plastic dual in-line package; 16 leads (300 mil) SOT38-4

1997 Nov 07

15

Philips Semiconductors Product specification

SA5219Wideband variable gain amplifier

SO16: plastic small outline package; 16 leads; body width 3.9 mm SOT109-1

1997 Nov 07

16

Philips Semiconductors Product specification

SA5219Wideband variable gain amplifier

NOTES

1997 Nov 07

17

Philips Semiconductors Product specification

SA5219Wideband variable gain amplifier

DEFINITIONS

Data Sheet Identification Product Status Definition

Objective Specification

Preliminary Specification

Product Specification

Formative or in Design

Preproduction Product

Full Production

Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

LIFE SUPPORT APPLICA TIONS Philips Semiconductors and Philips Electronics North America Corporation Products are not designed for use in life support appliances, devices, or systems where malfunction of a Philips Semiconductors and Philips Electronics North America Corporation Product can reasonably be expected

to result in a personal injury. Philips Semiconductors and Philips Electronics North America Corporation customers using or selling Philips Semiconductors and Philips Electronics North America Corporation Products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors and Philips Electronics North America Corporation for any damages resulting from such improper use or sale.

Philips Semiconductors 811 East Arques Avenue P.O. Box 3409 Sunnyvale, California 94088–3409 Telephone 800-234-7381

This data sheet contains the design target or goal specifications for product development. Specifications may change in any manner without notice.

This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.

This data sheet contains Final Specifications. Philips Semiconductors reserves the right to make changes at any time without notice, in order to improve design and supply the best possible product.

 Copyright Philips Electronics North America Corporation 1997

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1997 Nov 07

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