Datasheet S822TRW, S822TW Datasheet (VISHAY)

S822T/S822TW/S822TRW

Silicon NPN Planar RF Transistor

Observe precautions for handling.
Electrostatic sensitive device.

Applications

For low noise and high gain broadband amplifiers at
collector currents from 0.2 mA to 5 mA.

Features

D

Low supply voltage

D

Low current consumption

D

50 W input impedance at 945 MHz

D

Low noise figure

D

High power gain

Vishay Telefunken

21

94 9279

13 579

43

S822T Marking: 822
Plastic case (SOT 143)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter

2

1

13 56613 654

34

S822TRW Marking: WSF
Plastic case (SOT 343R)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter

1

2

13 653

3

4

S822TW Marking: W22
Plastic case (SOT 343)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter

13 566

Document Number 85050
Rev. 3, 20-Jan-99

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S822T/S822TW/S822TRW

Transition frequency

f

g

e ot

Real part of input impedance

Re

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Absolute Maximum Ratings

T

= 25_C, unless otherwise specified

amb

Parameter Test Conditions Symbol Value Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current I
Total power dissipation T

≤ 125 °C P

amb

Junction temperature T
Storage temperature range T

CBO
CEO
EBO

C
tot

j

stg

Maximum Thermal Resistance

T

= 25_C, unless otherwise specified

amb

Parameter T est Conditions Symbol Value Unit

Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm

3

R

thJA

plated with 35mm Cu

Electrical DC Characteristics

T

= 25_C, unless otherwise specified

amb

Parameter Test Conditions Symbol Min Typ Max Unit
Collector cut-off current VCE = 12 V, VBE = 0 I
Collector-base cut-off current VCB = 8 V, IE = 0 I
Emitter-base cut-off current VEB = 1 V, IC = 0 I
Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V
Collector-emitter saturation voltage IC = 5 mA, IB = 0.5 mA V
DC forward current transfer ratio VCE = 3 V, IC = 1 mA h

CES
CBO
EBO

(BR)CEO

CEsat

FE

12 V

6 V
2 V
8 mA

30 mW

150

–65 to +150

450 K/W

6 V

0.1 0.4 V

40 90 150

°

C

°

C

100mA
100 nA

1

m

A

Electrical AC Characteristics

T

= 25_C, unless otherwise specified

amb

Parameter Test Conditions Symbol Min Typ Max Unit

VCE = 3 V, IC = 1 mA, f = 500 MHz
VCE = 2 V, IC = 1.5 mA, f = 500 MHz

Collector-base capacitance VCB = 1 V, f = 1 MHz C

ZS = Z
2 V, I

Noise figure

ZS = Z
3 V, IC = 1 mA

ZS = Z
2 V, IC = 1.5 mA

VCE = 2 V, IC = 0.5 mA, f = 450MHz 13.5 dB

Power gain VCE = 3 V, IC = 1 mA, f = 945 MHz Gpe @F

VCE = 2 V, IC = 1.5 mA, f = 945 MHz

Collector current for fT max VCE = 2 V, f = 500 MHz I

p

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p

p

VCE = 3 V, IC = 1 mA, f = 945 MHz
VCE = 2 V, IC = 1.5 mA, f = 945 MHz

, f = 450 MHz, VCE =

Sopt

= 0.5 mA

C

, f = 945 MHz, VCE =

Sopt

, f = 945 MHz, VCE =

Sopt

F

opt

(h11e)

T

cb

C

opt

4.7 GHz

5.2 GHz

0.2 pF

1.1 dB

1.8 dB

2 dB

12.5 dB

14.0 dB
3 mA

50
50

Document Number 85050

Rev. 3, 20-Jan-99

W
W

Common Emitter S–Parameters

VCE/V

IC/mA

f/MHz

2

S822T/S822TW/S822TRW

Vishay Telefunken

Z0 = 50 W,

T

= 25_C, unless otherwise specified

amb

S11 S21 S12 S22

LIN

MAG

100 0.974 –4.0 1.86 175.2 0.012 86.4 0.997 –2.3
200 0.967 –7.9 1.84 169.7 0.024 82.4 0.993 –4.8
300 0.956 –11.8 1.82 164.2 0.035 78.6 0.87 –6.9
400 0.941 –15.6 1.79 158.9 0.046 75.1 0.979 –9.3
500 0.926 –19.0 1.75 153.9 0.056 71.7 0.968 –11.4
600 0.907 –22.5 1.72 149.2 0.066 69.0 0.959 –13.1

0.5 700 0.890 –25.8 1.68 145.0 0.075 66.4 0.951 –15.2
800 0.870 –29.3 1.66 141.0 0.084 63.9 0.940 –16.9
900 0.851 –32.3 1.63 136.1 0.092 61.1 0.930 –18.8

1000 0.833 –35.6 1.60 132.6 0.099 59.0 0.924 –20.4
1100 0.814 –39.0 1.58 128.6 0.108 56.9 0.913 –22.2
1200 0.794 –42.4 1.57 124.9 0.115 54.8 0.904 –24.0
1300 0.773 –45.6 1.55 121.2 0.121 52.7 0.895 –25.7

100 0.919 –6.9 4.86 171.8 0.012 84.3 0.992 –3.6
200 0.897 –13.7 4.78 163.4 0.023 78.4 0.979 –7.1
300 0.864 –19.8 4.62 155.7 0.034 73.0 0.957 –10.2
400 0.824 –25.7 4.41 148.3 0.043 68.4 0.933 –13.0
500 0.781 –31.0 4.21 141.3 0.051 64.0 0.909 –15.6
600 0.735 –36.1 4.00 135.3 0.058 60.6 0.881 –17.3

1.5 700 0.693 –40.5 3.82 129.4 0.064 58.2 0.858 –19.2
800 0.647 –44.6 3.62 124.3 0.071 54.7 0.836 –20.7
900 0.605 –48.5 3.46 118.9 0.076 52.0 0.814 –22.3

1000 0.567 –52.4 3.30 114.3 0.081 49.8 0.796 –23.6
1100 0.526 –56.4 3.16 110.0 0.085 48.1 0.778 –24.9
1200 0.491 –60.1 3.04 105.7 0.090 46.1 0.763 –26.3
1300 0.458 –64.4 2.92 102.0 0.094 44.9 0.747 –27.5

ANG

deg deg deg deg

LIN

MAG

ANG

LIN

MAG

ANG

LIN

MAG

ANG

Document Number 85050
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S822T/S822TW/S822TRW

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Typical Characteristics (T

50

40

30

20

10

tot

P – Total Power Dissipation ( mW )

0

0 25 50 75 100 125 150

T

– Ambient Temperature ( °C )13619

amb

Figure 1.. Total Power Dissipation vs.

Ambient Temperature

7000

6000

5000

f=500MHz

= 25_C unless otherwise specified)

amb

0.5

0.4

0.3

0.2

0.1

cb

C – Collector Base Capacitance ( pF )

0

012345

VCB – Collector Base Voltage ( V )13621

Figure 3.. Collector Base Capacitance vs.

Collector Base Voltage

3V

2V

4000

3000

2000

1000

T

f – Transition Frequency ( MHz )

0

012345

IC – Collector Current ( mA )13620

VCE=1V

Figure 2.. Transition Frequency vs. Collector Current

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Document Number 85050

Rev. 3, 20-Jan-99

S822T/S822TW/S822TRW

Vishay Telefunken

VCE = 2 V, IC = 1.5 mA , Z0 = 50

S

11

j

S

21

j0.5

j0.2

0

–j0.2

13 558

0.2

–j0.5

0.5

1

1300MHz

–j

Figure 4.. Input reflection coefficient

2

900

–j2

j2

5

500

–j5

j5

100

W

S

12

90°

120°

150°

1

180°

–150°

–120° –60°

13 559

500

100

–90°

60°

1300MHz

900

0.04 0.08

30°

0°

–30°

Figure 6.. Reverse transmission coefficient

S

22

90°

120°

900

500

150°

100

180°

–150°

–120° –60°

13 560

1300MHz

2 4

–90°

Figure 5.. Forward transmission coefficient

60°

30°

–30°

j

j0.5

j0.2

0°

0

–j0.2

13 561

0.2

–j0.5

0.5

1

–j

2

1300MHz

–j2

j2

5
500

100

j5

1

–j5

Figure 7.. Output reflection coefficient

Document Number 85050
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S822T/S822TW/S822TRW

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Dimensions of S822T in mm

Dimensions of S822TW in mm

96 12240

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96 12237

Document Number 85050

Rev. 3, 20-Jan-99

Dimensions of S822TRW in mm

S822T/S822TW/S822TRW

Vishay Telefunken

96 12238

Document Number 85050
Rev. 3, 20-Jan-99

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S822T/S822TW/S822TRW

Vishay Telefunken

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their

impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as

ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and

forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application

by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the

buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or

indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: [phone], Fax number: 49 (0)7131 67 2423

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Document Number 85050

Rev. 3, 20-Jan-99