Notice to Readers: This document states the current technical specifications regarding the Spansion
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Preliminary, or Full Production. See Notice On Data Sheet Designations for definitions.
Publication Number S75PL-N_00Revision 01EIssue Date April 21, 2006
Page 2
Data Sheet(Advance Information)
Notice On Data Sheet Designations
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range. Changes may also include those needed to clarify a
This document contains information for the S75PL-N MirrorBit MCP product. TheS75PL-N product consists of the following
devices:
S29PL-N
S30ML-P
3V pSRAM
107-Ball Fine-Pitch Ball Grid Array (FBGA)
– 9 x 12 x 1.4mm for ML512P based MCP's
– 11 x 13 x 1.4mm for ML01GP based MCPs
Operating Temperature Range
– Temperature Range of –25°C to +85°C
Flash/RAM Combinations Table
S29PL127N +
S30ML512PS75PL127NBF
S30ML01GP
Product Selector Guide
DevicepSRAM DensitypSRAM Type
S75PL127NBF32 MbpSRAM Type 7
For detailed specifications, please refer to the individual data sheets:
DocumentPublication Identification Number (PID)
S29PL-NS29PL-N_M0
S30ML-PS30ML-GP_00
32M pSRAM Type 7pSRAM_29
pSRAM Density
32 Mb64 Mb
Publication Number S75PL-N_00Revision 01EIssue Date April 21, 2006
This document contains information on one or more products under development at Spansion LLC. The information is intended to help you evaluate this product. Do not design
in this product without contacting the factory. Spansion LLC reserves the right to change or discontinue work on this proposed product without notice.
Page 4
Data Sheet(Advance Information)
1.Ordering Information
The ordering part number is formed by a valid combination of the following:
S75PL127NBFJFWGZ0
PACKING TYPE
0 = Tray
2 = 7” Tape and Reel
3 = 13” Tape and Reel
MODEL NUMBER
Refer to the Valid Combinations table below
TEMPERATURE RANGE
W = Wireless (–25°C to +85°C)
PACKAGE TYPE AND MATERIAL
JA = MCP BGA, 1.4 mm height, 0.8 mm pitch, Lead (Pb)-free Compliant package
JF = MCP BGA, 1.4 mm height, 0.8 mm pitch, Lead (Pb)-free package
ORNAND DATA DENSITY
F = S30ML512P
G = S30ML01GP
pSRAM DENSITY
B = 32 Mb pSRAM
C = 64 Mb pSRAM
D = 128 Mb pSRAM
PROCESS TECHNOLOGY
N = 110 nm MirrorBit™ Technology
FLASH DENSITY
256 = 256 Mb
127 = 128 Mb (Single CE#)
DEVICE FAMILY
S75PL = 3.0 Volt-only Simultaneous Read/Write, Page Mode Flash Memory with Data storage
ORNAND and pSRAM
2S75PL-N MirrorBit™ ORNAND™ MCPsS75PL-N_00_01E April 21, 2006
Page 5
Data Sheet(Advance Information)
0
2
#
#
#
#
#
1.1Valid Combinations
Valid Combinations list configurations planned to be supported in volume for this device. Consult your local
sales office to confirm availability of specific valid combinations and to check on newly released
combinations.
Top view—balls facing down. The addresses that are shared vary by MCP combination as shown in the table below:
PL-N AddressesPL-N/pSRAM Addresses
S75PL127NBFA22-A21A20:A0
Special Handling Instructions for FBGA Package
Special handling is required for Flash Memory products in FBGA packages.
Flash memory devices in FBGA packages may be damaged if exposed to ultrasonic cleaning methods. The
package and/or data integrity may be compromised if the package body is exposed to temperatures above
150°C for prolonged periods of time.
4S75PL-N MirrorBit™ ORNAND™ MCPsS75PL-N_00_01E April 21, 2006
Page 7
Data Sheet(Advance Information)
3.2FMH107—107-Ball Fine Pitch Ball Grid Array (FBGA) 9 x 12 mm package
Figure 3.2 FMH107
A
0.15
D
C
(2X)
E
PIN A1
CORNER
A2
A
PACKAGEFMH 107
JEDECN/A
D x E12.00 mm x 9.00 mm
SYMBOLMINNOMMAXNOTE
A------1.40 PROFILE
A10.17------BALL HEIGHT
A20.94---1.11 BODY THICKNESS
D12.00 BSC.BODY SIZE
E9.00 BSC.BODY SIZE
D18.80 BSC.MATRIX FOOTPRINT
E17.20 BSC.MATRIX FOOTPRINT
MD12MATRIX SIZE D DIRECTION
ME10MATRIX SIZE E DIRECTION
n107BALL COUNT
b0.350.400.45 BALL DIAMETER
Ø
eE0.80 BSC.BALL PITCH
eD0.80 BSC.BALL PITCH
SD / SE0.40 BSC.SOLDER BALL PLACEMENT
INDEX MARK
9
TOP VIEW
A1
6
SIDE VIEW
b
107X
0.15 M CMCAB
0.08
PACKAGE
A3,A4,A5,A6,A7,A8,DEPOPULATED SOLDER BALLS
B1,M3,M4,M5,M6,M7,M8
0.15
(2X)
C
eD
D1
10
9
8
7
6
5
4
eE
3
2
1
KML
B
C
0.20
C
C
0.08
NOTES:
1. DIMENSIONING AND TOLERANCING METHODS PER
2. ALL DIMENSIONS ARE IN MILLIMETERS.
3. BALL POSITION DESIGNATION PER JEP95, SECTION
4. e REPRESENTS THE SOLDER BALL GRID PITCH.
5. SYMBOL "MD" IS THE BALL MATRIX SIZE IN THE "D"
6 DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL
7 SD AND SE ARE MEASURED WITH RESPECT TO
8. "+" INDICATES THE THEORETICAL CENTER OF
9. A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER
7
SD
BOTTOM VIEW
ASME Y14.5M-1994.
4.3, SPP-010.
DIRECTION.
SYMBOL "ME" IS THE BALL MATRIX SIZE IN THE "E"
DIRECTION.
n IS THE NUMBER OF POPULTED SOLDER BALL
POSITIONS FOR MATRIX SIZE MD X ME.
DIAMETER IN A PLANE PARALLEL TO DATUM C.
DATUMS A AND B AND DEFINE THE POSITION OF THE
CENTER SOLDER BALL IN THE OUTER ROW.
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS
IN THE OUTER ROW SD OR SE = 0.000.
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS
IN THE OUTER ROW, SD OR SE = e/2
DEPOPULATED BALLS.
OR INK MARK, METALLIZED MARK INDENTATION OR
OTHER MEANS.
BJHGFE CDA
SE
7
E1
PIN A1
CORNER
3512 \ 16-038.19 \ 8.9.05
S75PL-N_00_01E April 21, 2006S75PL-N MirrorBit™ ORNAND™ MCPs5
Page 8
Data Sheet(Advance Information)
4.Revision History
4.1Revision A (April 21, 2006)
Initial release.
Colophon
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