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Silicon NPN Phototransistor
Description
S350P is a high sensitive silicon NPN epitaxial planar
phototransistor in a miniature plastic case with flat window.
With a lead center–to–center spacing of 2.54mm and
a package width of 2.4mm the devices are easily
stackable on PC boards and assembled to arrays of
unlimited size.
The epoxy package itself is an IR filter, spectrally
matched to GaAs IR emitters with
Features
D
High radiant sensitivity
D
Miniature T–¾ flat plastic package with IR filter
D
Very wide angle of half sensitivity ϕ = ± 40
D
Suitable for near infrared radiation
D
Suitable for 0.1” (2.54 mm) center–to–center
spacing
l
> 850nm.
p
°
S350P
Vishay Telefunken
94 8640
Applications
Detector in electronic control and drive circuits
Absolute Maximum Ratings
T
= 25_C
amb
Parameter Test Conditions Symbol Value Unit
Collector Emitter Voltage V
Emitter Collector Voltage V
Collector Current I
Peak Collector Current
Total Power Dissipation
Junction Temperature T
Storage Temperature Range T
Soldering Temperature
Thermal Resistance Junction/Ambient R
tp/T = 0.5, tp x 10 ms
T
x 55 °C
amb
t x 3 s
CEO
ECO
C
I
CM
P
tot
stg
T
sd
thJA
32 V
5 V
50 mA
100 mA
100 mW
j
100
–55...+100
260
450 K/W
°
C
°
C
°
C
Document Number 81543
Rev. 2, 20-May-99
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S350P
Vishay Telefunken
Basic Characteristics
T
= 25_C
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Collector Emitter Breakdown
Voltage
Collector Dark Current VCE = 20 V, E = 0 I
Collector Emitter Capacitance VCE = 5 V, f = 1 MHz, E=0 C
Collector Light Current Ee = 1 mW/cm2,
Angle of Half Sensitivity ϕ ±40 deg
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation
Voltage
Turn–On Time VS = 5 V, IC = 5 mA,
Turn–Off Time VS = 5 V, IC = 5 mA,
Cut–Off Frequency VS = 5 V, IC = 5 mA,
IC = 1 mA V
l
= 950 nm, VCE = 5 V
Ee = 1 mW/cm2,
l
= 950 nm, IC = 0.1 mA
RL = 100
RL = 100
R
= 100
L
W
W
W
(BR)CE
O
CEO
CEO
I
ca
l
p
l
0.5
V
CEsat
t
on
t
off
f
c
32 V
2 200 nA
6 pF
0.2 1 mA
925 nm
860...990 nm
0.3 V
6
5
110 kHz
m
s
m
s
Typical Characteristics (T
125
100
75
50
25
tot
P – Total Power Dissipation ( mW )
0
020406080
T
94 8308
Figure 1. Total Power Dissipation vs.
– Ambient Temperature ( °C )
amb
Ambient Temperature
= 25_C unless otherwise specified)
amb
4
10
3
10
VCE=20V
40 60 80
T
– Ambient Temperature ( °C )
amb
CEO
I – Collector Dark Current ( nA )
94 8260
2
10
1
10
0
10
20
R
thJA
100
Figure 2. Collector Dark Current vs. Ambient Temperature
100
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Document Number 81543
Page 3
S350P
Vishay Telefunken
2.0
1.8
1.6
VCE=5V
E
=1mW/cm
e
l
=950nm
2
1.4
1.2
1.0
ca rel
0.8
I – Relative Collector Current
0.6
0
20 40 60 80
94 8239
T
– Ambient Temperature ( °C )
amb
Figure 3. Relative Collector Current vs.
Ambient Temperature
10
1
0.1
0.01
ca
I – Collector Light Current ( mA )
0.001
0.01 0.1 1
94 8255
Ee – Irradiance ( mW/cm2 )
VCE=5V
l
=950nm
100
10
20
16
f=1MHz
12
8
4
CEO
C – Collector Emitter Capacitance ( pF )
0
0.1 1 10
94 8247
VCE – Collector Emitter Voltage ( V )
Figure 6. Collector Emitter Capacitance vs.
Collector Emitter Voltage
12
m
off
on
t / t – Turn on / Turn off Time ( s )
94 8253
10
8
6
4
2
0
04 81216
IC – Collector Current ( mA )
VCE=5V
R
=100
L
l
=950nm
100
W
t
on
t
off
Figure 4. Collector Light Current vs. Irradiance
10
l
=950nm
Ee=1mW/cm
1
0.5mW/cm
0.2mW/cm
0.1
ca
I – Collector Light Current ( mA )
0.1mW/cm
0.01
0.1 1 10
94 8256
VCE – Collector Emitter Voltage ( V )
Figure 5. Collector Light Current vs.
Collector Emitter Voltage
Document Number 81543
Rev. 2, 20-May-99
Figure 7. Turn On/Turn Off Time vs. Collector Current
1.0
2
2
0.8
0.6
2
2
0.4
rel
0.2
l
S ( ) – Relative Spectral Sensitivity
0
100
94 8261
700 800 900 1000
l
– Wavelength ( nm )
1100
Figure 8. Relative Spectral Sensitivity vs. Wavelength
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S350P
Vishay Telefunken
0°
10°20
°
30°
1.0
0.9
0.8
rel
S – Relative Sensitivity
0.7
0.4 0.2 0 0.2 0.4
0.6
94 8257
Figure 9. Relative Radiant Sensitivity vs.
Angular Displacement
Dimensions in mm
40°
50°
60°
70°
80°
0.6
96 12188
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4 (5) Rev. 2, 20-May-99
Document Number 81543
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S350P
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Document Number 81543
Rev. 2, 20-May-99
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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