The RURG3020 is an ultrafast diode with soft recovery
characteristics (t
< 45ns). It has low forward voltage drop
rr
and is of silicon nitride passivated ion-implanted epitaxial
planar construction.
This device is intended for use as a freewheeling/clamping
diode and rectifier in a variety of switching power supplies
and other powerswitchingapplications.Itslow stored charge
and ultrafast recovery with soft recovery characteristics
minimizes ringing and electrical noise in many power
switching circuits, reducing power loss in the switching
transistors.
IF = 1A, dIF/dt = 100A/µs--45ns
IF = 30A, dIF/dt = 100A/µs--50ns
t
a
t
b
R
θJC
IF = 30A, dIF/dt= 100A/µs-20-ns
IF = 30A, dIF/dt = 100A/µs-15-ns
--1.2
DEFINITIONS:
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
trr = Reverse recovery time (See Figure 6), summation of ta + tb.
ta = Time to reach peak reverse current (See Figure 6).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 6).
R
= Thermal resistance junction to case.
θJC
pw = Pulse width.
D = Duty cycle.
o
C/W
Typical Performance Curves
200
100
10
, FORWARD CURRENT (A)
F
I
1
0
0.30.60.91.21.5
, FORWARD VOLTAGE (V)
V
F
175oC
100oC
25oC
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGEFIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
400
100
10
1
0.1
, REVERSE VOLTAGE (A)
R
I
0.01
0.001
050100150200
175oC
100oC
25oC
VR, REVERSE VOLTAGE (V)
2
Page 3
Typical Performance Curves (Continued)
RURG3020
40
t
rr
30
t
20
t, TIME (ns)
10
0
11030
IF, FORWARD CURRENT (A)
a
t
b
40
30
DC
20
10
, AVERAGE FORWARD CURRENT (A)
F(AV)
I
0
130140150160170180
SQUARE
WAVE
, CASE TEMPERATURE (oC)
T
C
FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENTFIGURE 4. CURRENT DERATING CURVE
Test Circuits and Waveforms
VGE AMPLITUDE AND
RG CONTROL dIF/dt
t
V
GE
1 ANDt2
CONTROL I
t
1
F
R
t
2
L
DUT
CURRENT
G
IGBT
SENSE
+
V
DD
-
0
dI
F
I
F
dt
t
rr
t
a
t
b
0.25 I
I
RM
RM
FIGURE 5. trr TEST CIRCUITFIGURE 6. trr WAVEFORMS AND DEFINITIONS
I = 1A
L = 40mH
R < 0.1Ω
E
AVL
= IGBT (BV
Q
1
= 1/2LI2 [V
R(AVL)
CES
/(V
> DUT V
Q
R(AVL)
R(AVL)
1
- VDD)]
)
CURRENT
DUT
SENSE
LR
+
V
V
-
DD
DD
IV
V
AVL
I
L
t
0
I
L
t
1
t
2
t
FIGURE 7. AVALANCHE ENERGY TEST CIRCUITFIGURE 8. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
3
Page 4
RURG3020
Data SheetJanuary 2000
30A, 200V Ultrafast Diode
The RURG3020 is an ultrafast diode with soft recovery
characteristics (t
< 45ns). It has low forward voltage drop
rr
and is of silicon nitride passivated ion-implanted epitaxial
planar construction.
This device is intended for use as a freewheeling/clamping
diode and rectifier in a variety of switching power supplies
and other powerswitching applications. Its low stored charge
and ultrafast recovery with soft recovery characteristics
minimizes ringing and electrical noise in many power
switching circuits, reducing power loss in the switching
transistors.
IF = 1A, dIF/dt = 100A/µs--45ns
IF = 30A, dIF/dt = 100A/µs--50ns
t
a
t
b
R
θJC
IF = 30A, dIF/dt= 100A/µs-20-ns
IF = 30A, dIF/dt = 100A/µs-15-ns
--1.2
DEFINITIONS:
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
trr = Reverse recovery time (See Figure 6), summation of ta + tb.
ta = Time to reach peak reverse current (See Figure 6).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 6).
R
= Thermal resistance junction to case.
θJC
pw = Pulse width.
D = Duty cycle.
o
C/W
Typical Performance Curves
200
100
10
, FORWARD CURRENT (A)
F
I
1
0
0.30.60.91.21.5
, FORWARD VOLTAGE (V)
V
F
175oC
100oC
25oC
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGEFIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
400
100
10
1
0.1
, REVERSE VOLTAGE (A)
R
I
0.01
0.001
050100150200
175oC
100oC
25oC
VR, REVERSE VOLTAGE (V)
2
Page 6
Typical Performance Curves (Continued)
RURG3020
40
t
rr
30
t
20
t, TIME (ns)
10
0
11030
IF, FORWARD CURRENT (A)
a
t
b
40
30
DC
20
10
, AVERAGE FORWARD CURRENT (A)
F(AV)
I
0
130140150160170180
SQUARE
WAVE
, CASE TEMPERATURE (oC)
T
C
FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENTFIGURE 4. CURRENT DERATING CURVE
Test Circuits and Waveforms
VGE AMPLITUDE AND
RG CONTROL dIF/dt
t
V
GE
1 ANDt2
CONTROL I
t
1
F
R
t
2
L
DUT
CURRENT
G
IGBT
SENSE
+
V
DD
-
0
dI
F
I
F
dt
t
rr
t
a
t
b
0.25 I
I
RM
RM
FIGURE 5. trr TEST CIRCUITFIGURE 6. trr WAVEFORMS AND DEFINITIONS
I = 1A
L = 40mH
R < 0.1Ω
E
AVL
= IGBT (BV
Q
1
= 1/2LI2 [V
R(AVL)
CES
/(V
> DUT V
Q
R(AVL)
R(AVL)
1
- VDD)]
)
CURRENT
DUT
SENSE
LR
+
V
V
-
DD
DD
IV
V
AVL
I
L
t
0
I
L
t
1
t
2
t
FIGURE 7. AVALANCHE ENERGY TEST CIRCUITFIGURE 8. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
3
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