Datasheet RURD840S, RURD860, RURD860S Datasheet (Intersil)

Page 1
RURD840, RURD860, RURD840S, RURD860S
Data Sheet January 2000
8A, 400V - 600V Ultrafast Diodes
The RURD840, RURD860, RURD840S and RURD860S are ultrafast dual diodes with soft recovery characteristics (t
< 60ns). They have low forward voltage drop and are
silicon nitride passivated ion-implanted epitaxial planar construction.
These devices are intended for use as freewheeling/ clamping diodesandrectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.
Formerly developmental type TA09616.
Ordering Information
PART NUMBER PACKAGE BRAND
RURD840 TO-251 RUR840 RURD860 TO-251 RUR860 RURD840S TO-252 RUR840 RURD860S TO-252 RUR860
NOTE: Whenordering,usetheentirepart number.Addthesuffix 9A to obtain the TO-252 variant in tape and reel, e.g. RURD860S9A.
File Number 4033.1
Features
• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . .<60ns
• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175
o
• Reverse Voltage Up To. . . . . . . . . . . . . . . . . . . . . . . .600V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging
JEDEC STYLE TO-251
ANODE
CATHODE
CATHODE (FLANGE)
C
Symbol
K
A
Absolute Maximum Ratings T
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(TC = 155oC)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
= 25oC, Unless Otherwise Specified
C
RRM
RWM
F(AV)
FRM
FSM
STG
PKG
AVL
, T
JEDEC STYLE TO-252
CATHODE
ANODE
RURD840
RURD840S
400 600 V 400 600 V
R
D
J
L
400 600 V
88A
16 16 A
40 40 A
75 75 W 20 20 mJ
-65 to 175 -65 to 175
300 300 260 260
CATHODE (FLANGE)
RURD860
RURD860S UNITS
o
C
o
C
o
C
1
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
Page 2
RURD840, RURD860, RURD840S, RURD860S
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
RURD840, RURD840S RURD860, RURD860S
SYMBOL TEST CONDITION
V
F
IF = 8A - - 1.5 - - 1.5 V IF = 8A, TC = 150oC - - 1.3 - - 1.3 V
I
R
VR = 400V - - 100 - - - µA VR = 600V - - - - - 100 µA VR = 400V, TC = 150oC - - 500 - - - µA VR = 600V, TC = 150oC -----500µA
t
rr
IF = 1A, dIF/dt = 200A/µs - -60- -60ns IF = 8A, dIF/dt = 200A/µs - -70- -70ns
t
a
t
b
Q
RR
C
J
R
θJC
IF = 8A, dIF/dt = 200A/µs - 32 - - 32 - ns IF = 8A, dIF/dt = 200A/µs - 21 - - 21 - ns IF = 8A, dIF/dt = 200A/µs - 195 - - 195 - nC VR = 10V, IF = 0A - 25 - - 25 - pF
--2--2oC/W
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current. trr = Reverse recovery time (See Figure 9), summation of ta + tb.
ta = Time to reach peak reverse current (See Figure 9). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9).
QRR = Reverse recovery charge.
CJ = Junction Capacitance.
R
= Thermal resistance junction to case.
θJC
pw = pulse width.
D = duty cycle.
UNITSMIN TYP MAX MIN TYP MAX
Typical Performance Curves
40
10
100oC
, FORWARD CURRENT (A)
F
I
1
0.5 0 0.5 1 1.5 2 2.5
175oC
25oC
VF, FORWARD VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
2
500
100
10
1
, REVERSE CURRENT (µA)
0.1
R
I
0.01 0 200 400 600300 500
100
VR, REVERSE VOLTAGE (V)
175oC
100oC
25oC
Page 3
RURD840, RURD860, RURD840S, RURD860S
Typical Performance Curves (Continued)
60
TC = 25oC, dIF/dt = 200A/µs
50
40
t
30
20
t, RECOVERY TIMES (ns)
10
0
0.5 8
rr
t
a
t
b
1
IF, FORWARD CURRENT (A)
4
100
TC = 100oC, dIF/dt = 200A/µs
80
60
40
t, RECOVERY TIMES (ns)
20
0
0.5
t
rr
t
a
t
b
IF, FORWARD CURRENT (A)
FIGURE 3. trr,taAND tbCURVES vs FORWARD CURRENT FIGURE 4. trr,taAND tbCURVES vs FORWARD CURRENT
125
TC = 175oC, dIF/dt = 200A/µs
100
75
t
rr
8
DC
6
SQ. WAVE
4
814
50
t, RECOVERY TIMES (ns)
25
0
0.5
t
a
t
b
, FORWARD CURRENT (A)
I
F
814
2
, AVERAGE FORWARD CURRENT (A)
F(AV)
I
0
140 145 155 175165
150
, CASE TEMPERATURE (oC)
T
C
160 170
FIGURE 5. trr,taAND tbCURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE
100
80
60
40
20
, JUNCTION CAPACITANCE (pF)
J
C
0
0 50 100 150 200
VR, REVERSE VOLTAGE (V)
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
3
Page 4
RURD840, RURD860, RURD840S, RURD860S
Test Circuits and Waveforms
VGE AMPLITUDE AND RG CONTROL dIF/dt t
V
GE
I = 1A L = 40mH R < 0.1 E
Q
1 ANDt2
= 1/2LI2 [V
AVL
= IGBT (BV
1
CONTROL I
t
1
R(AVL)
CES
F
R
t
2
FIGURE 8. trr TEST CIRCUIT FIGURE 9. trr WAVEFORMS AND DEFINITIONS
/(V
R(AVL)
> DUT V
R(AVL)
L
DUT
G
IGBT
- VDD)] )
CURRENT
SENSE
LR
dI
F
I
F
+
V
DD
-
0
dt
t
rr
t
a
V
AVL
t
b
0.25 I
RM
I
RM
CURRENT
Q
1
SENSE
DUT
+ V
DD
V
DD
-
IV
t
0
I
L
I
L
t
1
t
2
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
t
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only .Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with­out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
4
Loading...