Datasheet RURD660, RURD660S Datasheet (Intersil)

RURD660, RURD660S

Data Sheet January 2000

6A, 600V Ultrafast Diodes

The RURD660 and R URD660S are ultr afast diodes with soft
recovery characteristics (t

< 55ns). They have lo w forward

rr

voltage drop and are silicon nitride passivated ion-implanted
epitaxial planar construction.

These devices are intended for use as freewheeling/
clamping diodes and rectifiers in a variety of switchingpower
supplies and other power switching applications. Their low
stored charge and ultrafast soft recovery minimize ringing
and electrical noise in many power switching circuits
reducing power loss in the switching transistors.

Formerly developmental type TA49038.

Ordering Information

PART NUMBER PACKAGE BRAND

RURD660 TO-251 RUR660
RURD660S TO-252 RUR660

NOTE: Whenordering, use the entire partnumber. Add thesuffix 9A
to obtain the TO-252 variant in the tape and reel, i.e., RURD660S9A.

File Number 3750.2

Features

• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . .<55ns

• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175

o

• Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . .600V

• Avalanche Energy Rated

• Planar Construction

Applications

• Switching Power Supplies

• Power Switching Circuits

• General Purpose

Packaging

JEDEC STYLE TO-251

CATHODE
(FLANGE)

ANODE

CATHODE

C

Symbol

K

A

Absolute Maximum Ratings T

Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

(TC = 155oC)

Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

(Square Wave, 20kHz)

Nonrepetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

(Halfwave, 1 Phase, 60Hz)

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Maximum Lead Temperature for Soldering

Leads at 0.063 in. (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

= 25oC, Unless Otherwise Specified

C

JEDEC STYLE TO-252

CATHODE

ANODE

RRM

RWM

F(AV)

FRM

FSM

STG

PKG

AVL

, T

CATHODE
(FLANGE)

RURD660

RURD660S UNITS

600 V
600 V

R

D

J

L

600 V

6A

12 A

60 A

50 W
10 mJ

-65 to 175

300
260

o

C

o

C

o

C

1

1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000

RURD660, RURD660S

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

SYMBOL TEST CONDITION MIN TYP MAX UNITS

V

F

IF = 6A - - 1.5 V
IF = 6A, TC = 150oC - - 1.2 V

I

R

VR = 600V - - 100 µA
VR = 600V, TC = 150oC - - 500 µA

t

rr

IF = 1A, dIF/dt = 200A/µs- - 55 ns
IF = 6A, dIF/dt = 200A/µs- - 60 ns

t

a

t

b

Q

RR

C

J

R

θJC

IF = 6A, dIF/dt = 200A/µs - 28 - ns
IF = 6A, dIF/dt = 200A/µs - 16 - ns
IF = 6A, dIF/dt = 200A/µs - 150 - nC
VR = 10V, IF = 0A - 25 - pF

--3oC/W

DEFINITIONS

VF = Instantaneous forward voltage (pw = 300µs, D = 2%).

IR = Instantaneous reverse current.
trr = Reverse recovery time (See Figure 9), summation of ta + tb.

ta = Time to reach peak reverse current (See Figure 9).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9).

QRR = Reverse recovery charge.

CJ = Junction capacitance.

R

= Thermal resistance junction to case.

θJC

pw = Pulse width.

D = Duty cycle.

Typical Performance Curves

30

10

o

100

C

, FORWARD CURRENT (A)

F

1

I

0.5
0 0.5 2.5121.5

175oC

VF, FORWARD VOLTAGE (V)

25oC

FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE

500

100

10

1

0.1

, REVERSE CURRENT (µA)

R

0.01

I

0.001
0 600400300200

100 500

175oC

100oC

25oC

VR, REVERSE VOLTAGE (V)

2

RURD660, RURD660S

Typical Performance Curves (Continued)

50

TC = 25oC, dIF/dt = 200A/µs

40

30

20

t, RECOVERY TIMES (ns)

10

0

0.5

t

rr

t

a

t

b

1

IF, FORWARD CURRENT (A)

6

90

TC = 100oC, dIF/dt = 200A/µs

75

60

45

30

t, RECOVERY TIMES (ns)

15

0

t

rr

t

a

t

b

160.5
IF, FORWARD CURRENT (A)

FIGURE 3. trr,taAND tbCURVES vs FORWARD CURRENT FIGURE 4. trr,taAND tbCURVES vs FORWARD CURRENT

100

TC = 175oC, dIF/dt = 200A/µs

80

60

40

t, RECOVERY TIMES (ns)

20

0

t

rr

t

a

t

b

160.5
IF, FORWARD CURRENT (A)

6

5

4

3

2

1

, AVERAGE FORW ARD CURRENT (A)

F(AV)

I

0

145

DC

SQ. WAVE

155 160 170150 175165

TC, CASE TEMPERATURE (oC)

FIGURE 5. trr,taAND tbCURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE

75

60

45

30

15

, JUNCTION CAPACITANCE (pF)

J

C

0

0 50 100 150 200

, REVERSE VOLTAGE (V)

V

R

FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE

3

Test Circuits and Waveforms

VGE AMPLITUDE AND
RG CONTROL dIF/dt
t

CONTROL I

1 ANDt2

V

GE

I = 1A
L = 20mH
R < 0.1Ω
E

AVL

Q

1

t

= 1/2LI2 [V

= IGBT (BV

1

R(AVL)

CES

F

R

t

2

FIGURE 8. trr TEST CIRCUIT FIGURE 9. trr WAVEFORMS AND DEFINITIONS

/(V

R(AVL)

> DUT V

R(AVL)

L

DUT

G

IGBT

- VDD)]
)

RURD660, RURD660S

CURRENT

SENSE

LR

dI

F

I

F

+

V

DD

-

0

dt

t

rr

t

a

V

AVL

t

b

0.25 I

RM

I

RM

CURRENT

Q

1

SENSE

DUT

+
V

DD

V

DD

-

IV

t

0

I

L

I

L

t

1

t

2

FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE

WAVEFORMS

t

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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with­out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
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