Datasheet RURD6120, RURD6120S Datasheet (Intersil)

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RURD6120, RURD6120S
Data Sheet January 2000
6A, 1200V Ultrafast Diodes
The RURD6120 and RURD6120S are ultrafast diodes with soft recovery characteristics (t
rr
forward voltage drop and are silicon nitride passivated ion­implanted epitaxial planar construction.
These devices are intended for use as freewheeling/ clamping diodes and rectifiers in a variety of switchingpower supplies and other power switching applications. Their low stored charge and ultrafast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.
Formerly development type TA49039.
Ordering Information
PART NUMBER PACKAGE BRAND
RURD6120 TO-251 UR6120 RURD6120S TO-252 UR6120
NOTE: Whenordering, usethe entirepart number.Add the suffix 9A to obtain the TO-252 variant in the tape and reel, i.e., RURD6120S9A.
File Number 3962.2
Features
• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . .<70ns
• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175
o
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1200V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging
JEDEC STYLE TO-251
ANODE
CATHODE
CATHODE (FLANGE)
C
Symbol
K
A
Absolute Maximum Ratings T
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(TC = 140oC)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
(Square Wave, 200kHz)
Nonrepetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Lead Temperature for Soldering
(Leads at 0.063 in. (1.6mm) from case for 10s). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
= 25oC, Unless Otherwise Specified
C
JEDEC STYLE TO-252
CATHODE
ANODE
RRM
RWM
F(AV)
FRM
FSM
STG
PKG
CATHODE (FLANGE)
RURD6120
RURD6120S UNITS
1200 V 1200 V 1200 V
6A
12 A
60 A
50 W 10 mJ
-65 to 175
300 260
AVL
, T
R
D
J
L
o
C
o
C
o
C
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1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
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RURD6120, RURD6120S
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
SYMBOL TEST CONDITION MIN TYP MAX UNITS
V
F
IF = 6A - - 2.1 V IF = 6A, TC = 150oC - - 1.9 V
I
R
VR = 1200V - - 100 µA VR = 1200V, TC = 150oC - - 500 µA
t
rr
IF = 1A, dIF/dt = 200A/µs--70ns IF = 6A, dIF/dt = 200A/µs--90ns
t
a
t
b
Q
RR
C
J
R
θJC
IF = 6A, dIF/dt = 200A/µs - 45 - ns IF = 6A, dIF/dt = 200A/µs - 30 - ns IF = 6A, dIF/dt = 200A/µs - 400 - nC VR = 10V, IF = 0A - 22 - pF
--3oC/W
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current. trr = Reverse recovery time (See Figure 9), summation of ta + tb.
ta = Time to reach peak reverse current (See Figure 9). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9).
QRR = Reverse recovery charge.
CJ = Junction Capacitance.
R
= Thermal resistance junction to case.
θJC
pw = Pulse width.
D = Duty cycle.
Typical Performance Curves
30
10
100oC
, FORWARD CURRENT (A)
F
I
1
0.5 0 0.5 2.5121.5
175oC
VF, FORWARD VOLTAGE (V)
25oC
3
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
500
100
10
1
0.1
, REVERSE CURRENT (µA)
R
0.01
I
0.001 0 1200800600400
175oC
100oC
25oC
200 1000
V
, REVERSE VOLTAGE (V)
R
2
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RURD6120, RURD6120S
Typical Performance Curves (Continued)
90
TC = 25oC, dIF/dt = 200A/µs
75
60
t
45
30
t, RECOVERY TIMES (ns)
15
0
0.5 6
rr
t
a
t
b
1 IF, FORWARD CURRENT (A)
125
TC = 100oC, dIF/dt = 200A/µs
100
75
50
t, RECOVERY TIMES (ns)
25
0
0.5 6
t
rr
t
a
t
b
1
IF, FORWARD CURRENT (A)
FIGURE 3. trr,taAND tbCURVES vs FORWARD CURRENT FIGURE 4. trr,taAND tbCURVES vs FORWARD CURRENT
150
125
100
TC = 175oC, dIF/dt = 200A/µs
t
rr
75
6
DC
5
SQ. WAVE
4
3
50
t, RECOVERY TIMES (ns)
25
0
0.5 6
t
a
t
b
1 IF, FORWARD CURRENT (A)
2
1
, AVERAGE FORWARD CURRENT (A)
F(AV)
I
0
115 130 160100 175145
T
, CASE TEMPERATURE (oC)
C
FIGURE 5. trr,taAND tbCURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE
100
80
60
40
20
, JUNCTION CAPACITANCE (pF)
J
C
0
0 50 100 150 200
VR, REVERSE VOLTAGE (V)
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
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Test Circuits and Waveforms
VGE AMPLITUDE AND RG CONTROL dIF/dt t
V
GE
I = 1A L = 20mH R < 0.1 E
Q
1 ANDt2
= 1/2LI2 [V
AVL
= IGBT (BV
1
CONTROL I
t
1
R(AVL)
CES
F
R
t
2
FIGURE 8. trr TEST CIRCUIT FIGURE 9. trr WAVEFORMS AND DEFINITIONS
/(V
R(AVL)
> DUT V
R(AVL)
L
DUT
G
IGBT
- VDD)] )
RURD6120, RURD6120S
CURRENT
SENSE
LR
+
V
DD
-
dI
F
I
F
dt
0
t
rr
t
a
V
AVL
t
b
0.25 I
RM
I
RM
CURRENT
Q
1
SENSE
DUT
+ V
DD
V
DD
-
IV
t
0
I
L
I
L
t
1
t
2
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
t
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporationreserves the right to make changes in circuit design and/or specifications at any time with­out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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