Page 1
Preliminary
RF5187
2
Typical Applications
• 2.14GHz UMTS Systems
• Digital Communication Systems
Product Description
The RF5187 is a highly-linear, low-power amplifier IC. It
has been designed for use as the driver RF am plifier in
applications such as W-CDMA basestations.The RF5187
requires an input andoutput matching network and power
supply feed line. The device is manufactured on an
advanced Gallium Arsenide HBT process, and is packaged in a 8-pin plastic package with a backside ground.
LOW POWER LINEAR AMPLIFIER
• PCS Communication Systems
• Commercial and Consumer Systems
-A-
0.05
±0.05
1.40
±0.10
1.70
±0.10
NOTES:
1. Shaded lead is pin 1.
2. Lead coplanarity - 0.10 with respect to datum "A".
4.90
±0.10
8° MAX
0° MIN
3.90
±0.10
6.00
±0.20
Dimensions in mm.
0.60
±0.15
0.43
±0.05
1.27
0.22
±0.03
Exposed
Heat Sink
±0.10
2
POWER AMPLIFIERS
2.70
Optimum Technology Matching® Applied
Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS
RF IN
RF IN
PC
VCC
ü
SiGe HBT
1
2
3
4
BIAS
CIRCUIT
PACKAGE BASE
GND
Si CMOS
8
RF OUT
7
RF OUT
6
RF OUT
5
RF OUT
Functional Block Diagram
Package Style: SOIC-8 Slug
Features
• Single 3V to 6V Supply
• 10dBm to 20dBm Ultra Linear Output
Power
•14dBGainat2.14GHz
• Power Down Mode
• 800MHz to 2500MHz Operation
Ordering Information
RF5187 Low Power Linear Amplifier
RF5187 PCBA Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro,NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A1 011016
2-73
Page 2
2
RF5187
Absolute Maximum Ratings
Parameter Rating Unit
Supply Voltage (VCC) -0.5 to +7.5 V
Power Control Voltage (VPC) -0.5to+5V V
DC Supply Current 450 mA
Input RF Power +20 dBm
Output Load VSWR 20:1
Operating Ambient Temperature -40 to +85 °C
Storage Temperature -40 to + 100 °C
DC
Preliminary
Caution! ESD sensitive device.
RF Micro Devices believesthe furnishedinformation is correctand accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice.RF Micro Devices does not
assume responsibility for the use of the described product(s).
Parameter
Overall
POWER AMPLIFIERS
Frequency Range 800 2500 MHz
Output Power 13 dBm
OP1dB 29 dBm
Small Signal Gain 13 15 dB
Input VSWR 1.5:1 With external matching network.
Min. Typ. Max.
Specification
Unit Condition
T=25°C, VCC=5.0V, ICC=240mA,
Freq=2140MHz, P
Two-Tone Specification
Output IP3 42 43 45 dBm 13dBm per tone.
Power Control
V
PC
Power Control “OFF” 0.2 0.5 V Threshold voltage at device input.
2.7 3.1 3.7 V To obtain 240mA idle current.
Power Supply
Power Supply Voltage 5 6 V
Supply Current 240 mA
Power Down Current 2 10 µAV
PC
=0.2V
OUT
=13dBm
2-74
Rev A1 011016
Page 3
Preliminary
RF5187
Pin Function Description Interface Schematic
1RFIN
2RFIN
3PC
4VCC
5RFOUT
6RFOUT
7RFOUT
8RFOUT
Pkg
GND
Base
RF input. Thi s input is DC-coupled, so an external blocking capacitor is
required if this pin is connected to a DC path. An optimum match to
50Ω is obtained byproviding an external series capacitor of 2.4pF and
then a shunt capacitor of2.4pF. Those values are typical for 2140MHz;
other values may be required for other frequencies.
Same as pin 1.
Powercontrolpin.For obtai ning maximum performance, the voltage on
this pin can be usedto setcorrect bias level.In atypical application this
is implemented bya feedback loop. The feedback can be based on the
actual supply current of the device (i.e. maintaining a fixed current
level), or it can be based on the RF output power level to maintain a
fixed RF power level (Automatic Level Control loop). A voltage of 0.5V
or lower b rings the part into power down state.
Power supply pin for the bias circuits. External low frequency bypass
capacitors should be connected if no other low frequency decoupling is
nearby.
RF output and bias for the output stage. The power supply for the output transistor needs to be supplied to this pin. This can be done
through a quarter-wavelength microstrip line that is RF-grounded at the
other end, or through an RF inductor that supports the required DC currents. Optimum load impedance is achieved by providing a shunt
capacitor of 1.8pF and a series capacitor of 3.3pF. Those values are
typical for 2140MHz; other values may be required for other frequencies. Since there are several output pins available (which are internally
connected), on e pin can be used for connecting the bias, another for
connecting a (third) harmonic trap filter, and the other pins for the RF
output.
Same as pin 5.
Same as pin 5.
Same as pin 5.
Ground connection. Thebackside of the package should be connected
to the ground plane through a short path (i.e., vias under the device
may be required).
2
POWER AMPLIFIERS
Rev A1 011016
2-75
Page 4
2
RF5187
Preliminary
Evaluation Board Schema t ic
2140MHz Operat ion
(Download Bill of Materials from www.rfmd.com.)
C2
J1
RF IN
VPC
50 Ωµstrip
POWER AMPLIFIERS
VCC
VCC=5V
f = 2140 MHz
P
=13dBm
OUT
2.4 pF
C1
2.4 pF
C6
1000 pF
C8
1uF
1
2
3
4
C7
1000 pF
BIAS
CIRCUIT
PACKAGE BASE
8
7
6
5
L1
4.7 nH
C5
33 pF
C3
3.3 pF
C3
1.8 pF
50 Ωµstrip
P1
P1-1 VCC
P1-3 VPC
1
2
3
CON3
J2
RF OUT
GND
2-76
Rev A1 011016
Page 5
Preliminary
RF5187
Evaluation Board Layout
Board Size 1.5” x 1.0”
Board Thickness 0.031”, Board Material FR-4
2
POWER AMPLIFIERS
Rev A1 011016
2-77
Page 6
2
RF5187
POWER AMPLIFIERS
Preliminary
2-78
Rev A1 011016
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