Datasheet RF5176, RF5176PCBA Datasheet (RF Micro Devices)

Preliminary

RF5176

2

Typical Applications

• 3V 1850-1910MHz CDMA-2000 Handsets

• 3V 1920-1980MHz W-CDMA Handsets

• Spread-Spectrum Systems

Product Description

The RF5176 is a high-power, high-efficiency linear ampli­fier IC targeting 3V handheld systems. The device is
manufactured on an advanced Gallium Arsenide Hetero­junction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in 3V
CDMA-2000 and W-CDMA handsets as well as other
applications in the 1850MHz to 2000MHz band. The
device is self-contained, and the output can be easily
matched to obtain optimum power, efficiency, and linear­ity characteristics over all recommended supply voltages.
The device has a continuously variable bias circuit to
allow idle current to be optimized for a given output
power.

3V W-CDMA POWER 1900MHZ/

3V LINEAR POWER AMPLIFIE R

• Commercial and Consumer Systems

• Portable Battery-Powered Equipment

1.00

0.90

0.60

0.24 typ

0.20

3

12°

MAX

0.05

Dimensions inmm.

NOTES:

1

Shaded lead is Pin 1.

2

Pin 1 identifier must exist on top surface of package byidentification
mark or feature on the package body. Exact shape and sizeis optional.

Dimension applies to plated terminal: to be measured between 0.02 mm

3

and 0.25 mm from terminal end.

4

Package Warpage: 0.05 mm max.

5

Die Thickness Allowable: 0.305 mm max.

0.75

0.50

4.00
sq.

0.50

Note orientation of package.

2.10

0.23

0.13

4 PLCS

2

0.65

0.30

4 PLCS

sq.

POWER AMPLIFIERS

Optimum Technology Matching® Applied

Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS

VREG1

VCC BIAS

VREG2

VS2

BIAS GND

ü

SiGe HBT

NC

NC

20 19 18 17

1

2

Bias

3

5

6 7 8 9 10

NC

Q1B

NC

RF OUT

Si CMOS

NC

16

RF OUT

RF IN

15

NC

14

NC

VCC1

13

124

VCC1

11

NC

RF OUT

Functional Block Diagram

Package Style: LCC, 20-Pin, 4x4

Features

• Single 3V Supply

• 27dBm Linear Output Power

• 26dB Linear Gain

• 40% Linear Efficiency

• On-board Power Down Mode

Ordering Information

RF5176 3V W-CDMAPower 1900MHZ/ 3V Linear Power

RF5176 PCBA Fully Assembled Evaluation Board

RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro,NC 27409, USA

Amplifier

Tel [phone]

Fax [phone]

http://www.rfmd.com

Rev A0 010910

2-197

2

RF5176

Absolute Maximum Ratings

Parameter Rating Unit

Supply Voltage (RF off) +8.0 V
Supply Voltage (P
Bias Voltage (V
Control Voltage (V
Input RF Power +6 dBm

Operating Case Temperature -30 to +100 °C
Storage Temperature -30 to +150 °C

≤31dBm) +5.0 V

OUT

)+3.0V

BIAS

)+3.0V

REG

DC

DC
DC
DC

Preliminary

Caution! ESD sensitive device.

RF Micro Devices believesthe furnishedinformation is correctand accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice.RF Micro Devices does not
assume responsibility for the use of the described product(s).

Parameter

POWER AMPLIFIERS

Overall

Usable Frequency Range 1850 2000 MHz
Typical Frequency Range 1850 to 1910 MHz

Linear Gain 26 dB
Second Harmonic (including

second harmonic trap)
Third Harmonic -50 dBc
Maximum Linear Output Power

(W-CDMA Modulation)
Total Linear Efficiency 40 % P

Adjacent Channel Power

Rejection@5MHz
Adjacent Channel Power

Rejection@10MHz
Noise Power -144 dBm/Hz P

Input VSWR < 2 :1
Output Load VSWR 5:1 No oscillations

Min. Typ. Max.

Specification

1920 to 1980 MHz

-55 dBc

27 dBm

-40 -38 dBc P

-50 -48 dBc P

Unit Condition

T=25°C, VCC=3.4V,
Freq=1920MHz to 19 80MHz, V
unless othe rwise specified

OUT
OUT

3GPP 3.2 03-00 DPCCH + 1 DPDCH

OUT

3GPP 3.2 03-00 DPCCH + 1 DPDCH

OUT

Rx Band 2110MHz to 2170MHz

Power Supply

Power Supply Voltage 3.0 3.4 5.0 V
Idle Current 80 mA V

VREG Current 10 µA Total pins 1 and 3, V
Turn On/Off time ns

Total Current (Power down) 10 µAV

“Low” Voltage 0 0.2 V

V

REG

“High” Voltage 2.5 V S ee Alternative Biasing Network table follow-

V

REG

REG

REG

ing the application schematic.

REG

=27dBm
=27dBm, W-CDMA Modulation,

=27dBm, W-CDMA Modulation,

=+27dBm,

=2.5V

=2.5V

REG

=Low

=2.5V,

2-198

Rev A0 010910

Preliminary

RF5176

Pin Function Description Interface Schematic

1VREG1

2 VCC BIAS
3VREG2

4 VS2
5BIASGND
6NC

7NC
8RFOUT

9RFOUT
10 RF OUT
11 NC
12 VCC1

13 VCC1
14 NC
15 NC
16 RF IN

17 NC
18 Q1B

19 NC
20 NC

Pkg

GND

Base

Bias control for the first stage. Needs to be divided down from its nomi­nal value of 2.5V using a resistive divider network of 240kΩ and
360kΩ.V

a given outputpower.AlternativeV
defined on the application schematic.
Supply for bias circuits.

Bias control for the second stage. Needs to be divided down from its
nominal value of 2.5V using a resistive divider network of 240kΩ and
240kΩ.AlternativeV

cation schematic.
Second stage bias circuit source. For best linearity, decouple with

bypassing capaci tors of 15pF and 100 nF.
Connect to ground p lane via a 15nH inductor. DC return forthe second

stage bias circuit.
Not currently used.

Not currently used.
RF output and power supply for the final stage. Thi s is the unmatched

collector of the final stage. It requires an output matching network,
including a DC blocking capacitor.

Same as pin 8.
Same as pin 8.
Not currently used.
Powersupply for the first stage and interstage match. Requires a shunt

capacitor of 12pF close to the pin for optimum match.
Same as pin 12.

Not currently used.
Not currently used.
RF input. Requires a blocking capacitor and shunt inductor to provide

2:1 VSWR.
Not currently used.

Base bias for first stage. For best linearity, decouple with 15pF and
100nF capacitors.

Not currently used.
Not currently used.
Ground connection. The backside of the package should be soldered

to a top side ground pad which is connected to the ground plane with
multiple vias. The pad should have a short thermal path to the ground
plane.

REG1

and V

maybeadjustedtominimizeidlecurrentfor

REG2

voltages can be used as defined on the appli-

REG

voltages can be used as

REG

2

POWER AMPLIFIERS

Rev A0 010910

2-199

RF5176

Preliminary

Application Schematic

2

5.6 pF

W = 0.028"

15 pF

RF IN

16

L = 0.120"

1.5 nH

15

14

13

124

11

W = 0.028"

L = 0.060"

12 pF

16 nH

15 pF 10nF 1 µF

10 nH

10 nF 1 µF 4.7 µF

V

CC

100 nF

15 pF

R6

360 kΩ

VREG

R8

240 kΩ

R7

POWER AMPLIFIERS

VCC BIAS

240 kΩ

15 pF100 nF

R5

240 kΩ

15 nH

VCC=3.4V

=2.5V

V

REG

V

BIAS = 3.4 V

CC

= 4.7 H = 14 mils

E

R

20 19 18 17

1

2

3

5

Bias

6 7 8 9 10

W = 0.028"

L = 0.060"

3.6 pF

3pF

Alternative Biasing Networks for Various V

V

(V) R5 (1ST) kΩ R6 (1ST-GND) kΩ R7 (2ND-GND) kΩ R8 (2ND) kΩ

REG

2.50 240 360 240 240

2.60 240 330 360 380

2.70 240 300 200 230

2.80 240 270 220 270

2.90 220 240 180 240

2-200

REG

RF OUT

Voltages

Rev A0 010910

Preliminary

P2

R8

240 kΩ

R7

240 kΩ

P3

C16

100 nF

C7

15 pF

Evaluation Board Schemati c

(Download Bill of Materials from www.rfmd.com.)

C3

100 nF

R6

360 kΩ

R5

240 kΩ

L3

15 nH

VCC=3.4V

V

=2.5V

REG

V

BIAS = 3.4 V

CC

E

= 4.7 H = 14 mils

R

C2

15 pF

20 19 18 17

1

2

3

5

Bias

6 7 8 9 10

W = 0.028"

L = 0.060"

C12

3.6 pF

C1

5.6 pF

16

W = 0.028"

L = 0.120"

L1

1.5 nH

15

14

13

124

11

W = 0.028"

L = 0.060"

L2

16 nH

15 pF

C4

12 pF

C8

L4

10 nH

C5

10 nF

C9

10 nF

RF5176

P1

1

P1 VCC

CON1

P2

1

P2 VREG

CON1

P3

1

P3 VCCBIAS

CON1

P4

1

GND

CON1

+ +

C6

1 µF

C10
1 µF

C11

4.7 µF

+

J1

RF IN

2

POWER AMPLIFIERS

P1

C13
3pF

15 pF

J2

RF OUT

Rev A0 010910

2-201

2

RF5176

Preliminary

Evaluation Board Layout

Board Size 2.0" x 2.0"

Board Thickness 0.028”, Board Material FR-4, Multi-Layer

Ground Plane at 0.014”

POWER AMPLIFIERS

2-202

Rev A0 010910