Datasheet RF3800 Datasheet (RF Micro Devices)

查询RF3800PCBA-416供应商

Proposed

0

Typical Applications

• Pre-Driver for 450MHz Basestation Amplifiers

• PA Stage for Commercial Wireless Infrastructure

Product Description

The RF3800 is specifically designed for wireless infra­structure applications in 450MHz. Using a highly reliable
GaAs HBT fabrication process, this high-performance
single-stage amplifier achieves high output power over a
broad frequency range. The RF3800 also provides excel­lent efficiency and thermal stability through the use of a
thermally-enhanced surface-mount AlN package. Ease of
integration is accomplished through the incor poration of
an optimized evaluation board design provided to ach ieve
proper 50Ω operation. Various evaluation board bias con­figurations are available to address a broad range of wire­less infrastructure applications.

RF3800

GaAs HBT PRE-DRIVER AMPLIFIER

• Class AB Operation for Cellular Radio and
Wireless Local Loop

Pin 1

0.198

0.050
TYP

0.020
7 PL

0.200 REF

0.236

0.156

0.180
REF

0.025

0.028
TYP

R.008

0.050
REF

-A-

0.005 A 0.0025

0.024

0.0780
MAX

Optimum Technology Matching® Applied

Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS
InGaP/HBT

VREF VBIAS

NC

RF IN

NC

9

SiGe HBT
GaN HEMT SiGe Bi-CMOS

1

2

3

4

Bias

Circuit

PACKAGE BASE

GND

Si CMOS

8

7

6

5

RF OUT

RF OUT

NC

Functional Block Diagram

Package Style: AlN

Features

• 6W Output Power

• High Linearity

• 45% Power-Added Efficiency

• Thermally-Enhanced Packaging

• Broadband Platform Design Approach

Ordering Information

RF3800 GaAs HBT Pre-Driver Amplifier
RF3800PCBA-416 Fully Assembled Evaluation Board

RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA

Tel [phone]

Fax [phone]

http://www.rfmd.com

Rev A1 040827

4-623

RF3800

Proposed

Please contact

RF Micro Devices

Applications Engineering

at [phone]

for more information.

4-624

Rev A1 040827