Page 1
查询RF3375供应商查询RF3375供应商
RF3375
0
Pb-Free Product
Typical Applications
• Basestation Applications
• Broadband, Low-Noise Gain Blocks
• IF or RF Buffer Amplifiers
Product Description
The RF3375 is a general purpose, low-cost RF amplifier
IC. The device is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an e asily-cascadable 50 Ω gain block. Applications include IF and RF
amplification in wireless voice and data communication
products operating in frequency b ands up to 6000MHz.
The device is self-contained with 50 Ω input and output
impedances and requires only two external DC-biasing
elements to operate as specified.
GENERAL PURPOSE AMPLIFIER
• Driver Stage for Power Amplifiers
• Final PA for Low-Power Applications
• High Reliability Applications
3.10
2.90
0.48
0.36
2 PL
1.04
0.80
2.60
2.40
Shaded lead is pin 1.
0.50
0.30
4.60
4.40
Dimensions in mm.
1.60
1.40
1.80
1.45
Optimum Technology Matching® Applied
Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS
InGaP/HBT
9
SiGe HBT
GaN HEMT SiGe Bi-CMOS
GND
4
1 2 3
GND
RF IN
Si CMOS
RF OUT
1.75
1.40
0.43
0.38
Package Style: SOT89
Features
• DC to >6000MHz Operation
• Internally Matched Input and Output
• 13.2dB Small Signal Gain
• +28dBm Output IP3
• +16.0dBm Output P1dB
Ordering Information
RF3375 General Purpose Amplifier
RF337XPCBA-41XFully Assembled Evaluation Board
0.53
0.41
Functional Block Diagram
Rev A6 050310
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
4-591
Page 2
RF3375
Absolute Maximum Ratings
Parameter Rating Unit
Input RF Power +13 dBm
Operating Ambient Temperature -40 to +85 ° C
Storage Temperature -60 to +150 °C
80 mA
I
CC
Caution! ESD sensitive device.
RF Micro Devices belie ves t he furnished inf ormation is correct and accur ate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Parameter
Min. Typ. Max.
Overall
Frequency Range DC to >6000 MHz
3dB Bandwidth 6 GHz
Gain 12.5 13.5 dB Freq=500MHz
Noise Figure 4.6 dB Freq=2000MHz
Input VSWR <1.9:1 In a 50Ω system, DC to 6000MHz
Output VSWR <2.0:1 In a 50Ω system, DC to 500MHz
Output IP
Output P
Reverse Isolation -18.0 dB Freq=2000MHz
3
+17.0 +18.5 dBm Freq=1000MHz
1dB
+31.0 +33.9 dBm Freq=1000MHz
+28.0 +30.0 dBm Freq=2000MHz
+14.5 +16.0 dBm Freq=2000MHz
Thermal
Theta
JC
Maximum Measured Junction
Temperature at DC Bias Conditions
Mean Time to Failures 1500 years T
Power Supply
Device Operating Volt age 5.18 5.36 V At pin 8 with I
Operating Current 65 80 mA See Note 2.
Note 1: All specification and characterization data has been gathered on standard FR-4 evaluation boards. These evaluation boards are
not optimized for frequencies above 2.5GHz. Performance above 2.5GHz may improve if a high performance PCB is used.
Note 2: The RF3375 must be operated at or below 80mA in order to achieve the thermal performance listed above. While the RF3375
may be operated at higher bias currents, 65mA is the recommended bias to ensure the highest possible reliability and electrical
performance.
Note 3: Because of process variations from part to part, the current resulting from a fixed bias voltage will vary. As a result, caution
should be used in designing fixed voltage bias circuits to ensure the worst case bias current does not exceed 80mA over all
intended operating conditions.
Specification
12.5 13.5 dB Freq=1000MHz
12.2 13.2 dB Freq=2000MHz
12.2 13.2 dB Freq=3000MHz
12.0 13.0 Freq=4000MHz
10.0 12.4 Freq=6000MHz
<1.7:1 In a 50Ω system, 500MHz to 6000MHz
175 °C/W V
139 °C T
6.6 7.0 V At Evaluation Board Connector I
Unit Condition
T=25°C, ICC=65mA (See Note 1.)
ICC=65mA, P
=4.81V
PIN
CASE
CASE
With 22Ω bias resistor, T=+25oC
DISS
=+85°C
=+85°C
CC
=313mW. (See Note 3.)
=65mA
=65mA
CC
4-592
Rev A6 050310
Page 3
RF3375
Pin Function Description Interface Schematic
1RF IN
2GND
3RF OUT
4GND
RF input pin. This pin is NOT internally DC blocked. A DC blocking
capacitor, suitable for the frequency of operation, should be used in
most applications. DC coupling of the input is not allowed, because this
will override the internal feedback loop and cause temperature instability.
Ground connection.
RF output and bias pin. Biasing is accomplished with an external series
resistor and choke inductor to V
DC current into this pin to a desired level. The resistor value is deter-
mined by the following equation:
-------------------------------------------------------
R
=
Care should also be taken in the resistor selection to ensure that the
current into the part never exceeds 80mA over the planned operating temperature. This means that a resistor between the supply and
this pin is always required, even if a supply near 5.0V is available, to
provide DC feedback to prevent thermal runaway. Because DC is
present on this pin, a DC blocking capacitor, suitable for the frequency
of operation, should be used in most applications. The supply side of
the bias network should also be well bypassed.
Ground connection.
. The resistor is selected to set the
CC
V
SUPPLYVDEVICE
–()
I
CC
RF OUT
RF IN
Rev A6 050310
4-593
Page 4
RF3375
Application Schematic
4
V
CC
J1
RF IN
100 pF
RF IN
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
P1
P1-1 VCC1
50 Ω µstrip
1
2
3
CON3
GND
C1
100 pF
337x410, r.1
1 2 3
1 2 3
22 Ω 100 pF
100 nH
100 pF
4
R1
22 Ω
L1
100 nH
C2
100 pF
+
1 µF
RF OUT
+
C3
100 pFC41 µF
50 Ω µstrip
VCC
J2
RF OUT
4-594
Rev A6 050310
Page 5
Evaluation Board Layout
Board Size 1.195" x 1.000"
Board Thickness 0.033”, Board Material FR-4
RF3375
Rev A6 050310
4-595
Page 6
RF3375
Gain versus Frequency Across Temperature
16.0
15.0
14.0
13.0
12.0
11.0
Gain (dB)
10.0
9.0
8.0
7.0
6.0
0.0 1000.0 2000.0 3000.0 4000.0 5000.0 6000.0 7000.0
(ICC=65mA)
Frequency (MH z)
Output IP3 versus Frequency Across Temperature
40.0
35.0
30.0
(ICC=65mA)
-40°C
25°C
85°C
Output P1dB versus Frequency Across Temperature
22.0
20.0
18.0
16.0
14.0
12.0
10.0
Output Power (dBm)
8.0
6.0
4.0
2.0
0.0 1000.0 2000.0 3000.0 4000.0 5000.0 6000.0 7000.0
(ICC=65mA)
Frequency (MH z)
Noise Figure versus Frequency Across Temperature
=65mA)
(I
7.0
6.0
5.0
CC
-40°C
25°C
85°C
25.0
OIP3 (dBm)
20.0
15.0
10.0
0.0 1000.0 2000.0 3000.0 4000.0 5000.0 6000.0 7000.0
Frequency (MH z)
Input VSWR versus Frequency Across Temperature
2.5
2.0
VSWR
1.5
1.0
0.0 1000.0 2000.0 3000.0 4000.0 5000.0 6000.0 7000.0
(ICC=65mA)
Frequency (M Hz)
-40C
25C
85C
-40C
25C
85C
4.0
3.0
Noise Figure (dB)
2.0
1.0
0.0
0.0 500.0 1000.0 1500.0 2000.0 2500.0 3000.0 3500.0
Frequency (MH z)
Output VSWR versus Frequency Across Temperature
2.5
2.0
VSWR
1.5
1.0
0.0 1000.0 2000.0 3000.0 4000.0 5000.0 6000.0 7000.0
(ICC=65mA)
Frequency (MH z)
-40°C
25°C
85°C
-40C
25C
85C
4-596
Rev A6 050310
Page 7
RF3375
Reverse Isolation versus Frequency Across
0.0
-5.0
-10.0
-15.0
-20.0
Reverse Isolation (dB)
-25.0
-30.0
0.0 1000.0 2000.0 3000.0 4000.0 5000.0 6000.0
Power Di ss i p ation versus D evice Voltage Ac ross Temperature
0.50
0.45
0.40
0.35
0.30
0.25
0.20
Power Dissipated (W)
0.15
0.10
0.05
0.00
4.60 4.70 4.80 4.90 5.00 5.10 5.20
Bias Cur rent versus Dev i c es Voltage Acro ss Tem p erature
100.0
Temperature
(ICC=65mA)
Frequency (M Hz)
=+85°C)
(T
AMBIENT
V
(V)
PIN
(At Pin 3 of the RF337 5)
-40C
25C
85C
Junction Temperature versus Power Dissipated
(T
=+85°C)
180.000
170.000
160.000
150.000
140.000
130.000
Junction Temperature (°C)
120.000
110.000
100.000
0.250 0.275 0.300 0.325 0.350 0.375 0.400
AMBIE NT
Power Di ssi pated (Wat ts)
Bias Current versus Supply Voltage Across Temperature
100.0
(mA)
CC
I
90.0
80.0
70.0
60.0
50.0
40.0
30.0
20.0
(At Evaluati on Boar d Connector, R
5.75.96.16.36.56.76.97.17.37.57.7
VCC (V)
BIAS
=22Ω)
-40C
25C
85C
90.0
80.0
70.0
60.0
(mA)
CC
50.0
I
40.0
30.0
20.0
10.0
4.6 4.8 5.0 5.2 5.4 5.6 5.8
Rev A6 050310
-40C
25C
85C
V
(V)
PIN
4-597
Page 8
RF3375
4-598
Rev A6 050310
Loading...