Page 1
Preliminary
RF3160
2
Typical Applications
• 3V Dual-Band GSM/DCS Handsets
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
Product Description
The RF3160 isa high-power,high-efficiency power amplifier module. The device is self-contained with 50Ω input
and output terminals. The device is manufactured on an
advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as
the final RF amplifier in GSM/DCS handheld digital cellular equipment and other applications in the 880MHz to
915 MHz and 1710MHz to 1785MHz bands. On-board
power control provides over 70dB of control range withan
analog voltage input, and provides power down with a
logic "low" for standby operation. The device is packaged
in an ultra-small (9m mx11 mm) LCC, minimizing the
required board space.
DUAL-BAND GSM/DCS
POWER AMP MODULE
•GPRSCompatible
• GSM, E-GSM and DCS Products
7.040
1.910
TYP
0.760
TYP
FULL
RADIUS
TYP
Dimensions in mm.
All contact points are gold-plated,
lead-free surfaces.
NOTES:
1. Shaded area is pin 1.
2. All dimensionswithoutspecifictolerances are for reference only.
11.61
±0.10
Bottom View
0.920
TYP
1
4.520
R0.860
TYP
1.40
1.25
Side View
0.450
±0.075
9.09
±0.10
2
POWER AMPLIFIERS
Optimum Technology Matching® Applied
Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS
1
GND
DCS IN
2
3
GND
GSM IN
4
5
GND
ü
SiGe HBT
BAND SELECT
16
6
VCC
15
7
GND
GND
ü
14
Si CMOS
APC
V
8
VCC
13
12
11
10
9
Functional Block Diagram
GND
DCS OUT
GND
GSM OUT
GND
Package Style: Module (9mmx11mm)
Features
• Single 2.8 V to 5.0V Supply Voltage
• +35.0 dBm GSM Output Power at 3.2V
• +32.5dBm DCS Output Power at 3.2V
• 55% GSM and 50% DCS Efficiency
• Internal Band Select
Ordering Information
RF3160 Dual-Band GSM/DCS Power Amp Module
RF3160 PCBA Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro,NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A4 010420
2-261
Page 2
2
RF3160
Absolute Maximum Ratings
Parameter Rating Unit
Supply Voltage -0.5 to +5.0 V
Power Control Voltage (V
) -0.5 to +3.0 V
APC1,2
DC Supply Current 2400 mA
Input RF Power +15 dBm
Duty Cycle at Max Power 50 %
Output Load VSWR 6:1
Operating Case Temperature -30 to +85 °C
Storage Temperature -30 to +85 °C
DC
Preliminary
Caution! ESD sensitive device.
RF Micro Devices believesthe furnishedinformation is correctand accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Specification
Unit Condition
Temp= +25°C, VCC=3.2V,V
P
=6dBm, Freq=880MHz to 915MHz,
IN
POWER AMPLIFIERS
Overall (GSM Mode)
Parameter
Min. Typ. Max.
25% Duty Cycle, Pulse Width=1154µs
Operating Frequency Range 880 to 915 MHz
Maximum Output Power 34.5 35.0 dBm Temp = 25°C, V
PAE Efficiency 50 55 % At P
OUT,MAX
=3.2V, V
CC
,VCC=3.2V
Input Power for Max Output +6 +8 +10 dBm
Output No ise Power -72 dBm RBW=100kHz, 925MHz to 935MHz,
>34.5dBm
P
OUT
-84 dBm RBW=100kHz, 935MHz to 960M Hz,
>34.5dBm
P
OUT
Forward Isolation -40 dBm V
Cross-Band Isolation -15 dBm P
Second Harmonic -7 dBm 5dBm<P
=0.1V,PIN=-5dBm
APCGSM
>34.5dBm
OUT
OUT
<34.5dBm
Third Harmonic -7 dBm
All Other Non-Harmonic
-7 dBm
Spurious
Input Impedance 50 Ω
Input VSWR 3:1
Output Load VSWR (Stability) 6:1 Spurious<-36dBm, V
APCGSM
RBW=3MHz
Output Load VSWR (Rugged-
ness)
10:1 P
=6dBm,P
IN
V
=4.6V,ZS=50Ω
CC
<34.5dBm,
OUT
Output Load Impedance 50 Ω Load impedan ce presented at RF OUT pad
Power Control V
Power Control “ON” 1.8 1.9 V Max. P
Power Control “OFF” 0.1 0.5 V Min. P
Power Control Range 60 dB V
Gain Control Slope 100 dB/V P
APC1
OUT
OUT
=0.1Vto 1.9V
APC1,2
=-10dBm to 34.5dBm
OUT
APC Input Capacitance 10 pF DC to 2MHz
APC Input Current 1 mA V
10 µAV
Turn On/Off Time 2 µSV
=1.9V
APC
=0V
APC
=0Vto1.9V
APC
Band Select 0 0.5 V GSM
22.8VDCS
Overall Power Supply
Power Supply Voltage 2.8 3.2 5.0 V Specific ations
2.9 4.7 V Nominal operating limits, P
Power Supply Current 2 A DC Current at P
30 µAV
APC1,2
OUT,MAX
=0.1V. No RF input power.
=1.9V,
APCGSM
APCGSM
=1.9V
=0.1V to 1.9V,
<+34.5dBm
OUT
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Page 3
Preliminary
RF3160
Parameter
Min. Typ. Max.
Overall (DCS Mode)
Operating Frequency Range 1710 to 1785 MHz
Maximum Output Power 31.9 32.5 dBm Temp=25°C, V
PAE Efficiency 42 50 % At P
Recommended Input Power
Range
Output Noise Power -80 -76 dBm RBW=100kHz, 1805MHz to 1880MHz,
Forward Isolation -48 dBm V
Second Harmonic -7 dBm 0dBm<P
Third Harmonic -7 dBm
All Other Non-Harmonic
Spurious
Input Impedance 50 Ω
Input VSWR 3:1
Output Load VSWR (Stability) 6:1 Spurious<-36dBm,
Output Load VSWR (Rugged-
ness)
Output Load Impedance 50 Ω Load impedance presented at RF OUT pin
Power Control V
Power Control “ON” 1.8 1.9 V Max. P
Power Control “OFF” 0.1 0.5 V Min. P
Power Control Range 60 dB V
Gain Control Slope 100 dB/V P
APC Input Capacitance 10 pF DC to 2MHz
APC Input Current 1 mA V
Turn On/Off TIme 100 ns V
APC2
Specification
+6 +8 +10 dBm
-7 dBm
10:1 P
10 µAV
Unit Condition
Temp=25°C, VCC=3.2V,
V
Freq=1710MHz to 1785MHz,
25% Duty Cycle, pulse width=1154µs
V
1710MHz to 1785MHz
P
V
V
=1.9V,PIN=6dBm,
APCDCS
=3.2V,
CC
=1.9V,1 710MHz to 1785 MHz
APCDCS
OUT,MAX,VCC
> 32.5dBm, VCC=3.2V
OUT
=0.1V,PIN=-5dBm
APCDCS
OUT
=0.1V to 1.9V, RBW=3MHz
APCDCS
=6dBm,P
IN
=4.6V, ZS=50Ω
CC
OUT
OUT
=0.1V to 1.9V
APC1,2
=-10dBm to +32.5dBm
OUT
=1.9V
APC
=0V
APC
=0to1.9V
APC
=3.2V,
<32.5dBm
<31.9dBm,
OUT
Overall Power Supply
Power Supply Voltage 3.2 V Specifications
2.9 4.7 V Nominal operating limits, P
Power Supply Current 1.3 A DC Current at P
30 µAV
=0.1V.No RF input power.
APC1,2
OUT,MAX
<+32.5dBm
OUT
2
POWER AMPLIFIERS
Rev A4 010420
2-263
Page 4
2
RF3160
Preliminary
Pin Function Description Interface Schematic
1GND
2 DCS IN
3GND
4GSMIN
5GND
6VCC
7GND
8VCC
POWER AMPLIFIERS
9GND
10 GSM OUT
11 GND
12 DCS OUT
13 GND
14 VAPC
15 GND
16 BAND
SELECT
Pkg
GND
Connects to module backside ground.
RF input to the DCS band. This is a 50Ω input , external DC-blocking
capacitor req u ired. See application schematic.
Connects to module backside ground.
RF input to the GSM band. This is a 50Ω input. No external DC-blocking capacitor required. See application schematic.
Connects to module backside ground.
Power supply for stages 1 and 2 of both the GSM and DCS power
amplifiers. External low frequency bypassing capacitor required. See
application schematic.
Connects to module backside ground.
Power supply for output stages of both the GSM and DCS power ampli-
fiers. External low frequency bypassing capacitor required. See ap p lication schematic.
Connects to module backside ground.
RF output for the GSM band. This is a 50Ω output. External DC-block-
ing capacitor required. See application schematic.
Connects to module backside ground.
RF output for the DCS band. This is a 50Ω output. External DC-blocking capacitor required. See application schematic.
Connects to module backside ground.
Single input analog power control voltage for the GSM and DCS band.
Connects to module backside ground.
Logic low (GSM enable) or logic high (DCS enable) provides single IO
band selection.
Module backside ground.
Base
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Preliminary
RF3160
Pin Out
Top View
GND
DCS IN
GND
GSM IN
GND
2
14
8
VCC
APC
V
GND
13
DCS OUT
12
11
10
9
GND
GSM OUT
GND
POWER AMPLIFIERS
BAND SELECT
16
1
2
3
4
5
6
VCC
GND
15
7
GND
Rev A4 010420
2-265
Page 6
RF3160
Preliminary
Application Schematic
VAPCBAND SELECT
141516
2
3.3 uF
13
10 pF
12
11
33 pF
10
9
50 Ω µstrip
50 Ω µstrip
V
CC
DCS OUT
GSM OUT
1
DCS IN
GSM IN
POWER AMPLIFIERS
50 Ω µstrip
50 Ω µstrip
10 pF
2
3
4
5
876
2-266
Rev A4 010420
Page 7
Preliminary
RF3160
Evaluation Board Layout
Board Size 2.0” x 2.0”
Board Thickness 0.032”, Board Material FR-4, Multi-Layer
Assembly Top
2
POWER AMPLIFIERS
Inner 1 Back
Rev A4 010420
2-267
Page 8
2
RF3160
POWER AMPLIFIERS
Preliminary
2-268
Rev A4 010420
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