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RF3140
0
Typical Applications
• 3V Quad-Band GSM Handsets
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
Product Description
The RF3140 is a high-power, high-efficiency power amplifier module with integrated power control. The device is
self-contained with 50Ω input and output ter minals. The
power control function is also incorporated, eliminating
the need for directional couplers, detector diodes, power
control ASICs and other power control circuitry; this
allows the module to be driven directly from the DAC output. The device is designed for use as the final RF amplifier in GSM850, EGSM900, DCS and PCS handheld
digital cellular equipment and other applications in the
824 MHz to 849 MHz, 880 MHz to 915 MHz, 1710 MHz to
1785 MHz and 1850MHz to 1910MHz bands. On-board
power control provides over 50dB of control range with an
analog voltage input; and, power down with a logic “low”
for standby operation.
QUAD-BAND GSM850/GSM900/DCS/PCS
POWER AMP MODULE
• GSM850/EGSM900/DCS/PCS Products
• GPRS Class 12 Compatible
• Power Star
TM
Module
9.600 TYP
8.800 TYP
8.200 TYP
7.400 TYP
6.800 TYP
6.000 TYP
5.400 TYP
4.600 TYP
4.000 TYP
3.200 TYP
2.600 TYP
1.800 TYP
1.200 TYP
0.400 TYP
0.000
Pin 1
10.00 ± 0.10
0.400 TYP
1.200 TYP
1.800 TYP
2.600 TYP
3.200 TYP
4.000 TYP
0.000
1.797
8.275 TYP
5.400 TYP
6.000 TYP
6.800 TYP
7.400 TYP
8.200 TYP
8.800 TYP
4.600 TYP
10.00
± 0.10
9.600 TYP
Pin 1
8.747
5.925
4.075
1.245
0.306
8.205
8.280
9.098 TYP
1.70
1.45
0.450
± 0.075
Optimum Technology Matching® Applied
Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS
InGaP/HBT
DCS/PCS IN
BAND SELECT
TX ENABLE
VBATT
VREG
VRAMP
GSM850/GSM900 IN
9
SiGe HBT
GaN HEMT SiGe Bi-CMOS
VCC2
12
1
2
3
4
5
6
7
8
VCC2
9
Si CMOS
11
DCS/PCS OUT
VCC OUT
10
GSM850/GSM900 OUT
9
Functional Block Diagram
Package Style: Module (10mmx 10mm)
Features
• Complete Power Control Solution
• Single 3.0V to 5.5V Supply Voltage
• +35dBm GSM Output Power at 3.5V
• +33dBm DCS/PCS Output Power at 3.5V
• 60% GSM and 55% DCS/PCS
η
EFF
• 10mmx10mm Package Size
Ordering Information
RF3140 Quad-Band GSM850/GSM900/DCS/PCS Power
RF3140 Power Amp Module 5-Piece Sample Pack
RF3140 PCBA Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Amp Module
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A6 040113
2-491
Page 2
RF3140
Absolute Maximum Ratings
Parameter Rating Unit
Supply Voltage -0.3 to +6.0 V
Power Control Voltage (V
Input RF Power +8.5 dBm
Max Duty Cycle 50 %
Output Load VSWR 10:1
Operating Case Temperature -20 to +85 °C
Storage Temperature -55 to +150 °C
) -0.3 to +1.8 V
RAMP
DC
Caution! ESD sensitive device.
RF Micro Devices belie ves t he furnished inf ormation is correct and accur ate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Parameter
Min. Typ. Max.
Specification
Unit Condition
Overall Power Control
V
Power Control “ON” 1.5 V Max. P
Power Control “OFF” 0.2 0.25 V Min. P
V
V
Turn On/Off Time 2 µsV
RAMP
Input Capacitance 15 20 pF DC to 2MHz
RAMP
Input Current 10 µAV
RAMP
RAMP
RAMP
, Voltage supplied to the input
OUT
, Voltage supplied to the input
OUT
=V
RAMP MAX
=0.2V to V
Overall Power Supply
Power Supply Voltage 3.5 V Specifications
3.0 5.5 V Nominal operating limits
Powe r Supply Current 1 10 µAP
150 mA V
Voltage 2.7 2.8 2.9 V
V
REG
Current 7 8 mA TX Enable=High
V
REG
10 µA TX Enable=Low
<-30dBm, TX Enable=Low,
IN
Temp=-20°C to +85°C
=0.2V, TX Enable=High
RAMP
Overall Control Signals
Band Select “Low” 0 0 0.5 V
Band Select “High” 1.9 2.0 3.0 V
Band Select “High” Current 20 50 µA
TX Enable “Low” 0 0 0.5 V
TX Enable “High” 1.9 2.0 3.0 V
TX Enable “High” Current 1 2 µA
RAMP MAX
2-492
Rev A6 040113
Page 3
RF3140
Parameter
Overall (GSM850 Mode)
Min. Typ. Max.
Specification
Unit Condition
Temp= +25 °C, V
=V
V
RAMP
V
REG
RAMP MAX
=2.8V, Freq=824MHz to 849MHz,
=3.5V,
BATT
, PIN=3dBm,
25% Duty Cycle, Pulse Width=1154µs
Operating Frequency Range 824 to 849 MHz
, V
BATT
BATT
BATT
=3.5V,
=3.0V,
=3.5V
Maximum Output Power +34.2 +35.0 dBm Temp = 25°C, V
=V
V
RAMP
RAMP MAX
32 33 dBm Temp=+85 °C, V
=V
V
RAMP
Total Efficiency 45 55 % At P
RAMP MAX
OUT MAX
Input Power Range 0 +3 +5 dBm Maximum output power guaranteed at mini-
mum drive level
Output Noise Power -86 -84 dBm RBW=100kHz, 869MHz to 894MHz,
> +5dBm
P
OUT
Forward Isolation 1 -35 -25 dBm TXEnable=Low, 0V, P
Forward Isolation 2 -25 -10 dBm TXEnable=High, P
Cross Band Isolation at 2f
-30 -20 dBm V
0
Second Harmonic -15 -5 dBm V
Third Harmonic -30 -10 dBm V
All Other
-36 dBm V
Non-Harmonic Spurious
RAMP
RAMP
RAMP
RAMP
=0.2V to V
=0.2V to V
=0.2V to V
=0.2V to V
=+5dBm
IN
=+5dBm, V
IN
RAMP MAX
RAMP MAX
RAMP MAX
RAMP MAX
=0.2V
RAMP
Input Impedance 50 Ω
Input VSWR 2.5:1 V
RAMP
=0.2V to V
RAMP MAX
Output Load VSWR Stability 8:1 Spurious<-36dBm, RBW=3MHz
Output Load VSWR Ruggedness 10:1 Set V
RAMP
where V
<34 .2dBm into
RAMP
50Ω load
Output Load Impedance 50 Ω Load impedance presented at RF OUT pad
Power Control V
Power Control Range 55 dB V
Note: V
RAMP MAX
RAMP
=3/8*V
+0.18<1.5V
BATT
RAMP
=0.2V to V
RAMP MAX
Rev A6 040113
2-493
Page 4
RF3140
Parameter
Overall (GSM900 Mode)
Min. Typ. Max.
Specification
Unit Condition
Temp= +25 °C, V
=V
V
V
RAMP
REG
RAMP MAX
=2.8V, Freq=880MHz to 915MHz,
=3.5V,
BATT
, PIN=3dBm,
25% Duty Cycle, Pulse Width=1154µs
Operating Frequency Range 880 to 915 MHz
, V
BATT
BATT
BATT
=3.5V,
=3.0V,
=3.5V
Maximum Output Power +34.2 +35.0 dBm Temp = 25°C, V
V
RAMP=VRAMP MAX
32 33 dBm Temp=+85 °C, V
=V
V
RAMP
Total Efficiency 52 58 % At P
RAMP MAX
OUT MAX
Input Power Range 0 +3 +5 dBm Maximum output power guaranteed at mini-
mum drive level
Output Noise Power -86 -82 dBm RBW=100kHz, 925MHz to 935MHz,
> +5dBm
P
OUT
-88 -84 dBm RBW=100kHz, 935MHz to 960MHz,
P
> +5dBm
OUT
Forward Isolation 1 -35 -25 dBm TXEnable=Low, 0V, P
Forward Isolation 2 -25 -10 dBm TXEnable=High, V
Cross Band Isolation 2f
-24 -20 dBm V
0
Second Harmonic -15 -5 dBm V
Third Harmonic -30 -10 dBm V
All Other
-36 dBm V
Non-Harmonic Spurious
RAMP
RAMP
RAMP
RAMP
=0.2V to V
=0.2V to V
=0.2V to V
=0.2V to V
=+5dBm
IN
=0.2V, PIN=+5dBm
RAMP
RAMP MAX
RAMP MAX
RAMP MAX
RAMP MAX
Input Impedance 50 Ω
Input VSWR 2.5:1 V
RAMP
=0.2V to V
RAMP MAX
Output Load VSWR Stability 8:1 Spurious<-36dBm, RBW=3MHz
Output Load VSWR Ruggedness 10:1 Set V
RAMP
where V
<34.2dBm into
RAMP
50Ω load
Output Load Impedance 50 Ω Load impedance presented at RF OUT pad
Power Control V
Power Control Range 50 dB V
Note: V
RAMP MAX
RAMP
=3/8*V
+0.18<1.5V
BATT
RAMP
=0.2V to V
RAMP MAX
2-494
Rev A6 040113
Page 5
RF3140
Parameter
Overall (DCS Mode)
Min. Typ. Max.
Specification
Unit Condition
Temp= 25°C, V
V
RAMP=VRAMP MAX
=2.8V, Freq=1710MHz to 1785MHz,
V
REG
=3.5V,
BATT
, PIN=3dBm,
25% Duty Cycle, pulse width=1154µs
Operating Frequency Range 1710 to 1785 MHz
Maximum Output Power +32 +33 dBm Temp=25°C, V
V
RAMP =VRAMP MAX
+29.5 +31.0 dBm Temp=+85°C, V
V
RAMP=VRAMP MAX
Total Efficiency 48 55 % At P
OUT MAX, VBATT
BATT
BATT
=3.5V,
=3.0V,
=3.5V
Input Power Range 0 +3 +5 dBm Maximum output power guaranteed at mini-
mum drive level
Output Noise Power -85 -80 dBm RBW=100kHz, 1805MHz to 1880MHz,
> 0dBm, V
P
OUT
Forward Isolation 1 -40 -30 dBm TXEnable=Low, 0V, P
Forward Isolation 2 -20 -10 dBm TXEnable=High, V
=3.5V
BATT
=+5dBm
IN
=0.2V, PIN=0dBm
RAMP
to +5dBm
Second Harmonic -15 -7 dBm V
Third Harmonic -30 -15 dBm V
All Other
-36 dBm V
Non-Harmonic Spurious
RAMP
RAMP
RAMP
=0.2V to V
=0.2V to V
=0.2V to V
RAMP MAX
RAMP MAX
RAMP MAX
Input Impedance 50 Ω
Input VSWR - 2.5:1 V
RAMP
=0.2V to V
RAMP MAX
Output Load VSWR Stability 8:1 Spurious<-36dBm, RBW=3 MHz
Output Load VSWR Ruggedness 10:1 Set V
RAMP
where V
<34 .2dBm into
RAMP
50Ω load
Output Load Impedance 50 Ω Load impedance presented at RF OUT pin
Power Control V
Power Control Range 50 dB V
Note: V
RAMP MAX
RAMP
=3/8*V
+0.18<1.5V
BATT
RAMP
=0.2V to V
RAMP MAX
, PIN=+5dBm
Rev A6 040113
2-495
Page 6
RF3140
Parameter
Overall (PCS Mode)
Min. Typ. Max.
Specification
Unit Condition
Temp= 25°C, V
=V
V
RAMP
V
REG
RAMP MAX
=2.8V, Freq=1850MHz to 1910MHz,
=3.5V,
BATT
, PIN=3dBm,
25% Duty Cycle, pulse width=1154µs
Operating Frequency Range 1850 to 1910 MHz
Maximum Output Power +32 +33 dBm Temp=25°C, V
=V
V
RAMP
RAMP MAX
+29.5 +31.0 dBm Temp=+85°C, V
=V
V
RAMP
Total Efficiency 45 52 % At P
RAMP MAX
OUT MAX, VBATT
=3.5V,
BATT
, 1850MHz to 1910MHz
=3.0V,
BATT
=3.5V
Input Power Range 0 +3 +5 dBm Full output power guaranteed at minimum
drive level
Output Noise Power -85 -80 dBm RBW=100kHz, 1930MHz to 1990MHz,
> 0dBm, V
P
OUT
Forward Isolation 1 -40 -30 dBm TX_ENABLE=Low, P
Forward Isolation 2 -20 -10 dBm TXEnable=High, V
Second Harmonic -15 -7 dBm V
Third Harmonic -30 -15 dBm V
All Other
-36 dBm V
Non-Harmonic Spurious
RAMP
RAMP
RAMP
=0.2V to V
=0.2V to V
=0.2V to V
=3.5V
BATT
=+5dBm
IN
=0.2V, PIN=+5dBm
RAMP
RAMP MAX
RAMP MAX
RAMP MAX
Input Impedance 50 Ω
Input VSWR - 2.5:1 V
RAMP
=0.2V to V
RAMP MAX
Output Load VSWR Stability 8:1 Spurious<-36dBm, V
V
RAMP MAX
Output Load VSWR Ruggedness 10:1 Set V
, RBW=3MHz
where V
RAMP
=0.2V to
RAMP
<34.2dBm into
RAMP
50Ω load
Output Load Impedance 50 Ω Load impedance presented at RF OUT pin
Power Control V
Power Control Range 50 dB V
Note: V
RAMP MAX
RAMP
=3/8*V
+0.18<1.5V
BATT
RAMP
=0.2V to V
RAMP MAX
, PIN=+5dBm
2-496
Rev A6 040113
Page 7
RF3140
Pin Function Description Interface Schematic
1 DCS/PCS IN
2 BAND
SELECT
3 TX ENABLE
4VBATT
5VREG
6 VRAMP
7 GSM850/GS
M900 IN
8VCC2
9 GSM850/GS
M900 OUT
10 VCC OUT
11 DCS/PCS
OUT
12 VCC2
Pkg
GND
Base
RF input to the DCS/PCS band. This is a 50Ω input.
Allows external control to select the GSM or DCS/PCS bands with a
logic high or low. A logic low enables the GSM bands, whereas a logic
high enables the DCS/PCS bands.
This signal enables the P A module for operation with a logic high. Once
TX Enable is asserted the RF output level will increase to -20dBm.
Power supply for the module. This should be connected to the battery.
Regulated voltage input for power control function. (2.8V nom)
Ramping signal from DAC. A simple RC filter may need to be con-
nected between the DAC output and the V
baseband selected.
RF input to the GSM bands. This is a 50Ω input.
Controlled voltage input to driver stage for GSM bands. This voltage is
part of the power control function for the module. This node must be
connected to V
RF output for the GSM bands. This is a 50Ω output. The output load
line matching is contained internal to the package.
Controlled voltage output to feed V
control function for the module. It cannot be connected to anything
other than V
decoupling capacitor).
RF output for the DCS/PCS bands. This is a 50Ω output. The output
load line matching is contained internal to the package.
Controlled voltage input to DCS/PCS driver stage. This voltage is part
of the power control function for the module. This node must be connected to V
out.
CC
. This voltage is part of the power
CC2
, nor can any component be placed on this node (i.e.,
CC2
out.
CC
input depending on the
RAMP
Rev A6 040113
2-497
Page 8
RF3140
Pin Out
PIN #1
VCC2
DCS/PCS IN
BAND SELECT
TX EN
VBATT
VREG
VRAMP
GSM850/GSM900 IN
VCC2
10.0000
DCS/PCS OUT
VCC OUT
GSM850/GSM900 OUT
10.0000
2-498
Rev A6 040113
Page 9
Theory of Operation
Overview
The RF3140 is a quad-band GSM850, EGSM900,
DCS1800, and PCS1900 power amplifier module that
incorporates an indirect closed loop method of power
control. This simplifies the phone design by eliminating
the need for the complicated control loop design. The
indirect closed loop appears as an open loop to the
user and can be driven directly from the DAC output in
the baseband circuit.
RF3140
There are several key factors to consider in the implementation of a transmitter solution for a mobile phone.
Some of them are:
• Effective efficienc y (η
• Current draw and system efficiency
• Power variation due to Supply Voltage
eff
)
Theory of Operation
The indirect closed loop is essentially a closed loop
method of power control that is invisible to the user.
Most power control systems in GSM sense either forward power or collector/drain current. The RF3140
does not use a power detector. A high-speed control
loop is incorporated to regulate the collector voltage of
the amplifier while the stage are held at a constant
bias. The V
signal is multiplied by a factor of 2.65
RAMP
and the collector voltage for the second and third
stages are regulated to the multiplied V
RAMP
volta ge.
The basic circuit is shown in the following diagram.
VBATT
TX ENABLE
VRAMP
H(s)
RF IN
TX ENABLE
RF OUT
By regulating the power, the stages are held in saturation across all power levels. As the required output
power is decreased from full power down to 0dBm, the
collector voltage is also decreased. This regulation of
output power is demonstrated in Equation 1 where the
relationship between collector voltage and output
power is shown. Although load impedance affects output power, supply fluctuations are the dominate mode
of power variations. With the RF3140 regulating collector voltage, the dominant mode of power fluctuations is
eliminated.
10
2
3–
(Eq. 1)
P
dBm
10
2 V
CCVSAT
-------------------------------------------
log⋅=
8 R
⋅⋅
LOAD
–⋅()
• Po wer variation due to frequency
• Po wer variation due to temperature
• Input impedance variation
• Noise power
• Loop stability
• Loop bandwidth variations across power levels
• Burst timing and transient spectrum trade offs
• Harmonics
Talk time and power management are key concerns in
transmitter design since the power amplifier has the
highest current draw in a mobile terminal. Considering
only the power amplifier’s efficiency does not provide a
true picture for the total system efficiency. It is important to consider effective efficiency which is represented by η
EFF
. (η
considers the loss between the
EFF
PA and antenna and is a more accurate measurement
to determine how much current will be drawn in the
application). η
is defined by the following relation-
EFF
ship (Equation 2):
m
PNP
–
IN
100⋅=
P
DC
(Eq. 2)
η
EFF
∑
n 1=
--------------------------------
Where Pn is the sum of all positive and negative RF
power, P
the input power and PDC is the delivered
IN
DC power. In dB the formula becomes (Equation 3):
PPAP
η
EFF
----------------------------- -
10
------------------------------------------------ -=
V
BATIBAT
+
LOSS
10
–
10
10⋅⋅
P
------- -
10
IN
(Eq. 3)
Rev A6 040113
2-499
Page 10
RF3140
Where PPA is the output power from the PA, P
insertion loss, P
the delivered DC power.
The RF3140 improves the effective efficiency by minimizing the P
coupler may introduce 0.4dB to 0.5d B loss to the transit path. To demonstrate the improvement in effective
efficiency consider the following example:
Conventional PA Solution at F=1785MHz:
the input power to the PA and P
IN
term in the equation. A directional
LOSS
LOSS
the
DC
PPA = +33.5 dBm
P
= +3 dBm
IN
= -0.4 d B
P
LOSS
= 3.5 V
V
BAT
I
= 1.16 A
BAT
RF3140 Solution:
= +33.5 dBm
P
PA
P
= +3 dBm
IN
= 0 dB
P
LOSS
= 3.5 V
V
BAT
I
= 1.16 A
BAT
The RF3140 solution improves effective efficiency by
5%.
Output power does not vary due to supply voltage
under normal operating conditions if V
ciently lower than V
voltage to the PA the voltage sensitivity is essentially
eliminated. This covers most cases where the PA will
be operated. However, as the battery discharges and
approaches its lower power range the maximum output
power from the PA will also drop slightly. In this case it
is important to also decrease V
power control from inducing switching transients.
These transients occur as a result of the control loop
slowing down and not regulating power in accordance
RAMP
.
with V
. By regulating the collector
BATT
η
= 50.3%
EFF
h
= 55.16%
EFF
RAMP
to prevent the
RAMP
is suffi-
3
-- -
V
RAMP
Due to reactive output matches, there are output power
variations across frequency. There are a number of
components that can make the effects greater or less.
Power variation straight out of the RF3140 is shown in
the tables below.
The components following the power amplifier often
have insertion loss variation with respect to fre quency.
Usually, there is some length of microstrip that follows
the power amplifier. There is also a frequency
response found in directional couplers due to variation
in the coupling factor over frequency, as well as the
sensitivity of the detector diode. Since the RF3140
does not use a directional coupler with a diode dete ctor, these variations do not occur.
Input impedance variation is found in most GSM power
amplifiers. This is due to a device phenomena where
and CCB (CGS and CSG for a FET) vary over the
C
BE
bias voltage. The same principle used to make varactors is present in the power amplifiers. The junction
capacitance is a function of the bias across th e junction. This produces input impedance variations as the
Vapc voltage is swept. Although this could present a
problem with frequency pulling the transmit VCO off
frequency, most synthesizer designers use very wide
loop bandwidths to quickly compensate for frequency
variations due to the load variations presented to the
VCO.
The RF3140 presents a very constant load to the VCO.
This is because all stages of the RF3140 are run at
constant bias. As a result, there is constant reactance
at the base emitter and base collector junction of the
input stage to the power amplifier.
Noise power in PA's where output power is controlled
by changing the bias voltage is often a problem when
backing off of output power. The reason is that the gain
is changed in all stages and according to the noise formula (Equation 5),
V
8
CC
0.18+⋅≤
(Eq. 4)
The switching transients due to low battery conditions
are regulated by incorporating the following relationship limiting the maximum V
Although no compensation is required for typical battery conditions, the battery compensation required for
extreme conditions is covered by the relationship in
Equation 4. This should be added to the ter minal software.
2-500
voltage (Equation 2) .
RAMP
F
TOT
the noise figure depends on noise factor and gain in all
stages. Because the bias point of the RF3140 is kept
constant the gain in the first stage is always high and
the overall noise power is not increased when decreasing output power.
F1
F21–
--------------- -
G1
F31–
-------------------++=
⋅
G1 G 2
(Eq. 5)
Rev A6 040113
Page 11
RF3140
Power control loop stability often presents many challenges to transmitter design. Desi gnin g a prop er power
control loop involves trade-offs affecting stability, transient spectrum and burst timing.
In conventional architectures the PA gain (dB/ V) varies
across different power levels, and as a result the loop
bandwidth also varies. With some power amplifiers it is
possible for the PA gain (control slope) to change from
100dB/V to as high as 1000dB/V. The challenge in this
scenario is keeping the loop bandwidth wide enough to
meet the burst mask at low slope regions which often
causes instability at high slope regions.
The RF3140 loop bandwidth is deter mined by internal
bandwidth and the RF output load and does not
change with respect to power le v els . This mak es it easier to maintain loop stability with a high bandwidth loop
since the bias voltag e and collector v oltage do not v ary.
An often overlooked problem in PA control loops is that
a delay not only decreases loop stability it also affects
the burst timing when, for instance the input power
from the VCO decreases (or increases) with respect to
temperature or supply voltage. The burst timing then
appears to shift to the right especially at low power levels. The RF3140 is insensitive to a change in input
power and the burst timing is constant and requires no
software compensation.
Switching transients occur when the up and down
ramp of the burst is not smooth enough or suddenly
changes shape. If the control slope of a PA has an
inflection point within the output power range or if the
slope is simply too steep it is difficult to prevent switching transients. Controlling the output power by changing the collector voltage is as earlier descr ibed based
on the physical relationship between voltage swing and
output power. Furthermore all stages are kept constantly biased so inflection points are nonexistent.
Harmonics are natural products of high efficiency
power amplifier design. An ideal class “E” saturated
power amplifier will produce a perfect square wave.
Looking at the Fourier transform of a square wave
reveals high harmonic content. Although this is common to all power amplifiers, there are other factors that
contribute to conducted harmonic conten t a s well. With
most power control methods a peak power diode
detector is used to rectify and sense forward power.
Through the rectification process there is additional
squaring of the waveform resulting in higher harmonics. The RF3140 address this by eliminating the need
for the detector diode . Ther ef or e the harmonics coming
out of the PA should represent the maximum power of
the harmonics throughout the transmit chain. This is
based upon proper harmo nic termination of the transmit port. The receive port termination on the T/R switch
as well as the harmonic impedance from the switch
itself will have an impact on harmonics. Should a problem arise, these terminations should be explored.
The RF3140 incorporates many circuits that had previously been required external to the power amplifier.
The shaded area of the diagram below illustrates those
components and the fo llo wing ta b le itemizes a comparison between the RF3140 Bill of Materials and a conventional solution:
Component Conventional
Power Control ASIC $0.80 N/A
Directional Coupler $0.20 N/A
Buffer $0.05 N/A
Attenuator $0.05 N/A
Various Passives $0.05 N/A
Mounting Yield
(other than PA)
Total $1.27 $0.00
Solution
$0.12 N/A
RF3140
Rev A6 040113
2-501
Page 12
RF3140
From DAC
1
2
3
4
5
6
7
*Shaded area eliminated with Indirect Closed Loop using RF3140
14
13
12
11
10
9
8
2-502
Rev A6 040113
Page 13
Application Schematic
RF3140
DCS/PCS IN
BAND SELECT
TX ENABLE
VBATT
VREG
VRAMP
GSM850/GSM900 IN
** Used to filter noise and spurious from base band.
DCS/PCS IN
BAND SELECT
TX ENABLE
VBATT
VREG
VRAMP
GSM850/GSM900 IN
50 Ω µstrip
50 Ω µstrip
CON1
50 Ω µstrip
6.8 pF
22 µF*
1 nF*
50 Ω µstrip
15 kΩ**
12
1
2
3
4
5
6
7
8
50 Ω µstrip
11
10
50 Ω µstrip
9
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
P1
1
GND
15 kΩ**
P2-1
P2
CON1
1
2
3
4
5
6
7
VCC
1
12
8
50 Ω µstrip
11
10
50 Ω µstrip
9
DCS/PCS OUT
GSM850/GSM900 OUT
DCS/PCS OUT
GSM850/GSM900 OUT
Rev A6 040113
*Not required in most applications.
** Used to filter noise and spurious from base band.
Note 1: All the PA output measurements are referenced to the PA output pad (Pin 11 and 9).
Note 2: The 50 Ω microstrip between the PA output pad and the SMA connector has an
approximate insertion loss of 0.1 dB for GSM850/EGSM900 and 0.2 dB for
DCS1800/PCS1900 bands.
2-503
Page 14
RF3140
Evaluation Board Layout
Board Size 2.0” x 2.0”
Board Thickness 0.032”, Board Material FR-4, Multi-Layer
2-504
Rev A6 040113
Page 15
RF3140
PCB Design Requirements
PCB Surface Finish
The PCB surface finish used for RFMD’s qualification process is electroless nickel, immersion gold. Typical thickness is
3µinch to 8µinch gold over 180µinch nickel.
PCB Land Pattern Recommendation
PCB land patterns are based on IPC-SM-782 standards when possible. The pad pattern shown has been developed and
tested for optimized assembly at RFMD; however, it may require some modifications to address company specific
assembly processes. The PCB land pattern has been developed to accommodate lead and package tolerances.
PCB Metal Land and Solder Mask Pattern
A = 0.80 (mm) Sq. Typ.
0.00
Pin 1
A
A
A
A
A
A
A
AA
A
0.00
1.40 (mm) Typ.
2.30 (mm) Typ.
Metal Land Pattern
A
7.49 (mm) Typ.
6.60 (mm)
6.00 (mm)
5.20 (mm)
5.11 (mm)
A
3.30 (mm)
3.21 (mm)
2.41 (mm)
1.78 (mm)
0.98 (mm)
0.89 (mm) Typ.
8.39 (mm) Typ.
7.51 (mm) Typ.
8.39 (mm) Typ.
7.00 (mm) Typ.
5.60 (mm) Typ.
4.20 (mm) Typ.
2.81 (mm) Typ.
1.40 (mm) Typ.
8.39 (mm) Typ.
7.00 (mm)
5.60 (mm)
4.20 (mm) Typ.
2.81 (mm)
1.40 (mm)
Figure 1. PCB Metal Land and Solder Mask Pattern (Top View)
0.00
A = 0.80 (mm) Sq. Typ.
B = 2.17 x 6.40 (mm)
Pin 1
AAAAA
A
A
A
A
A
A
A
A
A
AAA
A
0.00
1.40 (mm) Typ.
Solder Mask Pattern
A
A
A
A
B
A
A
AAA
3.48 (mm)
4.19 (mm) Typ.
2.79 (mm) Typ.
5.60 (mm) Typ.
A
A
A
A
A
A
A
A
7.00 (mm) Typ.
4.20 (mm)
A
A
A
A
8.39 (mm) Typ.
Rev A6 040113
2-505
Page 16
RF3140
Thermal Pad and Via Design
The PCB land pattern has been designed with a thermal pad that matches the exposed die paddle size on the bottom of
the device.
Thermal vias are required in the PCB layout to effectively conduct heat away from the package. The via pattern shown
has been designed to address thermal, power dissipation and electrical requirements of the device as well as accommodating routing strategies.
The via pattern used for the RFMD qualification is based on thru-hole vias with 0.203mm to 0.330mm finished hole size
with 0.025mm plating on via walls. If micro vias are used in a design, it is suggested that the quantity of vias be
increased by a 4:1 ratio to ac hieve similar results . .
1.40 (mm) Grid
Figure 2. Thermal Pad and Via Design (RFMD qualification)
2-506
Rev A6 040113
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