Datasheet RF3120, RF3120PCBA Datasheet (RF Micro Devices)

Preliminary

RF3120

2

3V 1800MHZ LINEAR AMPLIFIER MODULE

Typical Applications

• 3V CDMA Korean-PCS Handsets • Spread-Spectrum Systems

Product Description

The RF3120 is a high-power, high-efficiency linear ampli­fier IC targeting 3V handheld systems. The device is
manufactured on an advanced Gallium Arsenide Hetero­junction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in dual-mode
3V CDMA hand-held digital cellular equipment, spread­spectrum systems, and other applications in the
1750 MHz to 1780 M Hz band. The RF3120 has a digital
bias control voltage for low current in standby mode. The
device is self-contained with 50 Ω input and output that is
matched to obtain optimum power, efficiency, and linear­ity characteristics. The module is an ultra-small
6mmx6mm land grid array with backside ground.

0.800 sq
typ

1.700

2.500

NOTE:

Nominal thickness, 1.55 mm.

0.600

2

0.1003.000

4.390

6.0 sq

0.100

Dimensions in mm.

POWER AMPLIFIERS

Optimum Technology Matching® Applied

Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS

ü

1VCC1

2RF IN

3VREG

SiGe HBT

Si CMOS

7 GND

6 RF OUT

5 VCC24

VMODE

Functional Block Diagram

Package Style: LGM (6mmx6mm)

Features

• Input/Output Internally Matched @ 50Ω

• Single 3V Supply

• 29dBm Linear Output Power

• 26dB Linear Gain

• 32% Linear Efficiency

Ordering Information

RF3120 3V 1800MHz Linear Amplifier Module
RF3120 PCBA Fully Assembled Evaluation Board

RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro,NC 27409, USA

Tel [phone]

Fax [phone]

http://www.rfmd.com

Rev A0 010906

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2

RF3120

Absolute Maximum Ratings

Parameter Rating Unit

Supply Voltage (RF off) +8.0 V
Supply Voltage (P
Control Voltage (V
Mode Voltage (V
Input RF Power +10 dBm

Operating Ambient Temperature -30 to +85 °C
Storage Temperature -30 to +150 °C

≤29dBm) +4.5 V

OUT

)+4.2V

REG

)+3.5V

MODE

DC

DC
DC
DC

Preliminary

Caution! ESD sensitive device.

RF Micro Devices believesthe furnishedinformation is correctand accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice.RF Micro Devices does not
assume responsibility for the use of the described product(s).

Parameter

POWER AMPLIFIERS

Overall

Frequency Range 1750 1780 MHz
Linear Gain 22 26 dB
Second Harmonic -35 dBc
Third Harmonic -40 dBc
Maximum Linear Output Power

(CDMA Modulation)
Total Linear Efficiency 30 32 %
Adjacent Channel Power Rejec-

tion
Input VSWR <2:1
Output VSWR 10:1 No damage.

Noise Figure 8 dB
Noise Power -95 dBm/30kHz At90MHz offset.

Min. Typ. Max.

Specification

29 dBm

-44 dBc ACPR @ 1250kHz

6:1 No oscillations.

Unit Condition

Power Supply

Power Supply Voltage 3.2 3.4 4.5 V
Quiescent Current 100 mA
V

Current 6 mA Pin 3, V

REG

Turn On/Off Time 40 µs
Total Current (Power down) 10 µAV

“Low” Voltage 0 0.2 V

V

REG

“High” Voltage 2.7 2.8 2.9 V

V

REG

T=25°C, VCC=3.4V, V
V

=2.8V, Freq=1750MHz to 1780MHz

MODE

unless othe rwise specified

=2.8V

REG

=low

REG

REG

=2.8V,

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Preliminary

RF3120

Pin Function Description Interface Schematic

1VCC1
2RFIN

3VREG
4VMODE

5VCC2
6RFOUT
7GND

Pkg

GND

Base

First stage collector supply. A lowfrequencydecoupling capacitor (e.g.,

4.7µF) is required.
RF input internally matched to 50Ω. This input is internally AC-coupled.

Regulated voltage supply for amplifier bias.
For nominal operation, V

will increase the bias current by approximately 50%; and, large signal
gain is increased by approximately 1.5dB.

Output stage collector supply. A low frequency decoupling capacitor
(e.g., 4.7µF) is required.

RF output internally matched to 50Ω.This output is internally AC-cou­pled.

Ground connection. Connect to package base ground. For best perfor­mance, keep traces physically short and connect immediately to
ground plane.

Ground connection. The backside of the package should be soldered to
a top side ground pad which is connected to the ground plane with mul­tiple vias. The pad should have a short thermal pa th to the ground
plane.

is set to HIGH. When set LOW: V

MODE

MODE

2

POWER AMPLIFIERS

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2

RF3120

VCC1

Evaluation Board Schema t ic

(Download Bill of Materials from www.rfmd.com.)

C19

+

4.7

µ

F

1

7

Preliminary

3120400-

50Ωµstrip

J2

RF OUT

J1

RF IN

POWER AMPLIFIERS

VREG

50Ωµstrip

2

3

C20

µ

F

1

+

VMODE VCC2

6

54

C1

µ

F

4.7

2-260

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Preliminary

RF3120

Evaluation Board Layout

Board Size 2.0” x 2.0”

Board Thickness 0.028”, Board Material FR-4

2

POWER AMPLIFIERS

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2

RF3120

POWER AMPLIFIERS

Preliminary

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