Page 1
Preliminary
RF3118
2
Typical Applications
• 3V CDMA US-PCS Handsets
• 3V CDMA2000/1X PCS Handsets
Product Description
The RF3118 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is
manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in dual-mode
3V CDMA hand-held digital cellular equipment, spreadspectrum systems, and other applications in the
1850 MHz to 1910 M Hz band. The RF3118 has a digital
control line for low power application to reduce the current drain. The device is self-contained with 50Ω input
and output that is matched to obtain optimum power, efficiency, and linearity characteristics. The module is an
ultra-small 6mmx6mm land grid array with backside
ground.
3V 1900MHZ LINEAR AMPLIFIER MODULE
• Compatible with Qualcomm Chipset
• Spread-Spectrum Systems
0.1003.000
0.800 sq
typ
1.700
2.500
NOTE:
Nominal thickness, 1.55 mm.
0.600
4.390
6.0 sq
0.100
Dimensions in mm.
2
POWER AMPLIFIERS
Optimum Technology Matching® Applied
Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS
ü
1VCC1
2RF IN
3VREG
SiGe HBT
Si CMOS
7 GND
6 RF OUT
5 VCC24
VMODE
Functional Block Diagram
Package Style: LGM (6mmx6mm)
Features
• Input/Output Internally Matched @50Ω
• Single 3V Supply
• 29dBm Linear Output Power
• 27dB Linear Gain
• 34% Linear Efficiency
• 50mA Idle Current
Ordering Information
RF3118 3V 1900MHz Linear Amplifier Module
RF3118 PCBA Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro,NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A0 011016
2-273
Page 2
2
RF3118
Absolute Maximum Ratings
Parameter Rating Unit
Supply Voltage (RF off) +8.0 V
Supply Voltage (P
Control Voltage (V
Mode Voltage (V
Input RF Power +10 dBm
Operating Case Temperature -30 to +110 °C
Storage Temperature -30 to +150 °C
≤29dBm) +5.2 V
OUT
)+4.2V
REG
)+3.5V
MODE
DC
DC
DC
DC
Preliminary
Caution! ESD sensitive device.
RF Micro Devices believesthe furnishedinformation is correctand accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice.RF Micro Devices does not
assume responsibility for the use of the described product(s).
Parameter
POWER AMPLIFIERS
High Power S tate
(V
Frequency Range 1850 1910 MHz
Linear Gain 25 27 dB
Second Harmonic -40 dBc
Third Harmonic -50 dBc
Maximum Linear Output Power
(CDMA Modulation)
Total Linear Efficiency 34 % P
Adjacent Channel Power
Rejection
Input VSWR 2:1
Output VSWR 10:1 No damage.
Noise Power -141 dBm/Hz At 80MHz offset.
MODE
Low)
Min. Typ. Max.
Specification
28 29 dBm
-48 -46 dB c ACPR@1.25MHz, P
-60 -57 dB c ACPR@2.25MHz, P
6:1 No oscillations. >-70dBc
Unit Condition
Low Power State
(V
Frequency Range 1850 1910 MHz
Linear Gain 15 19 dB
Second Harmonic -40 dBc
Third Harmonic -50 dBc
Maximum Linear Output Power
(CDMA Modulation)
Adjacent Channel Power
Rejection
Input VSWR 2:1
Output VSWR 10:1 No damage.
MODE
High)
16 20 dBm
-55 -46 dB c ACPR@1.25MHz, P
-72 -60 dB c ACPR@1.25MHz, P
6:1 No oscillations. >-70dBc
Typical Performance at VCC=3.2V,
V
=3.0VT
REG
Frequency=1850MHz to 1910MHz (unless
otherwise specified)
=28dBm
OUT
Typical Performance at VCC=3.2V,
V
=3.0VT
REG
Frequency=1850MHz to 1910MHz (unless
otherwise specified)
AMB
AMB
=25oC,
OUT
OUT
=25oC,
OUT
OUT
=28dBm
=28dBm
=16dBm
=16dBm
2-274
Rev A0 011016
Page 3
Preliminary
RF3118
Parameter
Min. Typ. Max.
DC Supply
Supply Voltage 3.2 3.7 4.2 V
Quiescent Current 160 200 mA V
Current 8 mA
V
REG
Current 1 mA
V
MODE
Turn On/Off Time (RF) 6 µs
Total Current (Power Down) 10 µAV
V
“Low” Voltage 0 0.5 V
REG
“High” Voltage 2.9 3.0 3.1 V
V
REG
“Low” Voltage 0 0.5 V
V
MODE
V
“High” Voltage 2.0 3.0 V
MODE
Specification
50 60 mA V
5 µA
Unit Condition
T
=25oC
AMB
MODE
MODE
=Low, V
REG
=LowV
=High, V
=3.0V, VCC=3.2V
REG
=3.0V,VCC=3.2V
REG
=Low
MODE
2
POWER AMPLIFIERS
Rev A0 011016
2-275
Page 4
2
RF3118
Preliminary
Pin Function Description Interface Schematic
1 VCC1
2RFIN
3VREG
4VMODE
5 VCC2
6RFOUT
7GND
POWER AMPLIFIERS
Pkg
GND
Base
First stage collector supply. A low frequency decoupling capacitor
(e.g., 1µF) is required.
RF input internally matched to 50Ω.T his input is internally AC-coupled.
Regulated voltage supply for amplifier bias. In Power Down mode, both
and V
V
REG
For nominal operation (High Power Mode), V
set HIGH, devices are turned off to improve efficiency.
Output stage collector supply. A low frequency decoupling capacitor
(e.g., 1µF) is required.
RF output internally matched to 50Ω.This output is internally
AC-coupled.
Ground connection. Connect to package base ground. For best perfor-
mance, keep traces physically short and connect immediately to
ground plane.
Ground connection. The backside of the package should be soldered to
a top side ground pad which is connected to the ground plane with multiple vias. The pad should have a short thermal path to the ground
plane.
need to be LOW (<0.5 V).
MODE
is set LOW. When
MODE
2-276
Rev A0 011016
Page 5
Preliminary
RF3118
Evaluation Board Schemati c
(Download Bill of Materi als from www.rfmd.com.)
VCC1
J2
RF IN
VREG
50 Ωµstrip
C2
4.7 µF
C4
4.7 µF
1
2
3
C3
4.7 µF
VMODE VCC2
7
6
54
C2
4.7 µF
50 Ωµstrip
J6
RF OUT
2
POWER AMPLIFIERS
Rev A0 011016
2-277
Page 6
2
RF3118
Preliminary
Evaluation Board Layout
Board Size 1.5” x 1.5”
Board Thickness 0.032”, Board Material FR-4, Multi-Layer, Ground Plane at 0.014”
POWER AMPLIFIERS
2-278
Rev A0 011016
Loading...