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2
POWER AMPLIFIERS
Preliminary
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro,NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
3VREG
2RF IN
1VCC1
6 RF OUT
7 GND
5 VCC24
VMODE
RF3117
3V 900MHZ LINEAR AMPLIFIER MODULE
• 3V CDMA/AMPS Cellular Handsets
• 3V CDMA2000/1X Cellular Handsets
• Compatible with Qualcomm Chipset
• Spread-Spectrum Systems
The RF3117 is a high-power, high-efficiency linear amplifier module targeting 3V handheldsystems.The device is
manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in dual-mode
3V CDMA/AMPS handheld digital cellular equipment,
spread-spectrum systems, and other applications in the
824 MHz to 849MHz band. The RF3117 has a digital control line for low power application to reduce the current
drain. The device is self-contained with 50Ω input and
output that is matched to obtain optimum power, efficiency, and linearity characteristics. The module is an
ultra-small 6mmx6mm land grid array with backside
ground.
• Input/Output Internally Matched@50Ω
• Single 3V Supply
• 30dBm Linear Output Power
• 30dB Linear Gain
• 33% Linear Efficiency
• 55mA Idle Current
RF3117 3V 900MHz Linear Amplifier Module
RF3117 PCBA Fully Assembled Evaluation Board
2
Rev A0 011016
6.0 sq
0.1003.000
4.390
0.600
0.800 sq
typ
NOTE:
Nominal thickness, 1.55 mm.
1.700
0.100
2.500
Dimensions in mm.
Package Style: LGM (6mmx6mm)
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Absolute Maximum Ratings
Parameter Rating Unit
Supply Voltage (RF off) +8.0 V
DC
Supply Voltage (P
OUT
≤31dBm) +5.2 V
DC
Control Voltage (V
REG
)+4.2V
DC
Input RF Power +10 dBm
Mode Voltage (V
MODE
)+3.5V
DC
Operating Case Temperature -30 to +110 °C
Storage Temperature -30 to +150 °C
Parameter
Specification
Unit Condition
Min. Typ. Max.
High Power Sta te
(V
MODE
Low)
Typical Performance a t VCC=3.2V,
V
REG
=3V, T
AMB
=25°C,
Frequency=824MHz to 849MHz
(unless otherwise specified)
Frequency Range 824 849 MHz
Linear Gain 27 30 dB
Second Harmonic -35 dBc
Third Harmonic -40 dBc
Maximum Linear Output Power
(CDMA Modulation)
29 30 dBm
Total Linear Efficiency 33 % V
CC
=3.2V,P
OUT
=29dBm
(room temperature)
Adjacent Channel Power
Rejection
-46.5 -45.0 dBc ACPR@885kHz, P
OUT
=Max P
OUT
-59 -57 dBc ACPR@1980kHz, P
OUT
=MaxP
OUT
Input VSWR 1.8:1
Output VSWR 10:1 No damage.
6:1 No oscillations. >-70dBc
Noise Power -135 dBm/Hz At 45MHz offset.
Low Power State
(V
MODE
High)
Typical Performance a t VCC=3.2V,
V
REG
=3V, T
AMB
=25°C,
Frequency=824MHz to 849MHz
(unless otherwise specified)
Frequency Range 824 849 MHz
Linear Gain 17.5 21 dB
Second Harmonic -35 dBc
Third Harmonic -40 dBc
Maximum Linear Output Power
(CDMA Modulation)
16 20 dBm
Adjacent Channel Power
Rejection
-52 -44 dBc ACPR@885kHz, P
OUT
=Max P
OUT
-62 -55 dBc ACPR@1980kHz, P
OUT
=MaxP
OUT
Output VSWR 10:1 No damage.
6:1 No oscillations. >-70dBc
Caution! ESD sensitive device.
RF Micro Devices believesthe furnishedinformation is correctand accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice.RF Micro Devices does not
assume responsibility for the use of the described product(s).
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Parameter
Specification
Unit Condition
Min. Typ. Max.
FM M ode
Typical Performance at VCC=3.2V,
V
REG
=3V, T
AMB
=25°C,
Frequency=824MHz to 849MHz
(unless otherwise specified)
Frequency Range 824 849 MHz
Gain 30 dB
Second Harmonic -32 dBc
Third Harmonic -40 dBc
Max CW Output Power 31.5 dBm
Total Efficiency (AMPS mode) 42 % P
OUT
=31.5dBm (room temperature)
Input VSWR <2:1
Output VSWR 10:1 No damage.
6:1 No oscillations. >-70dBc
DC Supply
T
AMB
=25°C
Supply Voltage Range 3.2 3.7 4.2 V
Quiescent Current 160 240 mA V
MODE
=Low, V
REG
=3V, VCC=3.2V
55 65 mA V
MODE
=High, V
REG
=3V, VCC=3.2V
V
REG
Current 10 mA V
MODE
=High
V
MODE
Current 1 mA
Turn On/Off Time <40 µsV
REG
switch from Low to High,
I
CC
to within 90% of the final value,
P
OUT
within 1dB of the final value
Total Current (Power Down) 3 10 µAV
REG
=Low, V
MODE
=Low
V
REG
“Low” Voltage 0 0.5 V
V
REG
“High” Voltage 2.9 3.0 3.1 V
V
MODE
“Low” Voltage 0 0.5 V
V
MODE
“High” Voltage 2.0 3.0 V
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Pin Function Description Interface Schematic
1 VCC1
First stage collector supply.A low frequency decoupling capacitor (e.g.,
4.7µF) is required.
2RFIN
RF input internally matched to 50Ω.This input is internally AC-coupled.
3VREG
Regulated voltage supply for amplifier bias. In Power Down mode, both
V
REG
and V
MODE
need to be LOW (<0.5V ).
4VMODE
For nominal operation (High Power Mode), V
MODE
is set LOW. When
set HIGH, devices are turned off to improve efficiency.
5 VCC2
Output stag e collector supply. A low frequency decoupling capacitor
(e.g., 4.7µF) is required.
6RFOUT
RF output internally matched to 50Ω.This output is internally AC-coupled.
7GND
Ground conn ection. Connect to package base ground. For best performance, keep traces physically short and connect immediately to
ground plane.
Pkg
Base
GND
Ground connection. The backside of the package should be soldered to
a top side ground pad which is connected to the ground plane with multiple vias. The pad should have a short thermal path to the ground
plane.
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Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
3
2
1
6
7
54
50 Ωµstrip
J6
RF OUT
50 Ωµstrip
J2
RF IN
C1
4.7 µF
C2
4.7 µF
VCC1
VMODE VCC2
VREG
C4
4.7 µF
C3
4.7 µF
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Evaluation Board Layout
Board Size 1.5” x 1.5”
Board Thickness 0.032”, Board Material FR-4, Multi-Layer, Ground Plane at 0.014”
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