Datasheet RF3108, RF3108PCBA Datasheet (RF Micro Devices)

RF3108

2

Typical Applications

• 3V Dual-Band/Triple-Band GSM Handsets

• Commercial and Consumer Systems

Product Description

The RF3108 is a high-power,high-efficiencypowerampli­fier module offering high performance in GSM or GPRS
applications. The device is self-contained with 50Ω input
and output terminals. The device is manufactured on an
advancedGaAs HBT process, and hasbeen designed for
use as the final RF amplifier in GSM/DCS and PCS hand
held-digital c ellular equipment and other applications in
the 880 M Hz to 915 MHz and 1710MHz to 1910MHz
bands. On-board power control provides over 70dB of
control range with an analog voltage input, and provides
power down with a logic "low" for standby operation. The
device is packaged in an ultra-small (9mmx10mm) LCC,
minimizing the required board space.

TRIPLE- BAND GSM/DCS/PCS

POWER AMP MODULE

• Portable Battery-Powered Equipment

•GPRSCompatible

1.40

1.40

1.40

0.90

10.0 + 0.10

1.00
typ.

typ.

0.38
Ref.

1.40

1.40

1.40

1.30

0.30

NOTE: Shaded area represents Pin 1.

0.60
typ.

9.0 + 0.10

Noteorientation of Pin 1.

1.55

+0.10

2

POWER AMPLIFIERS

Optimum Technology Matching® Applied

Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS

VCC

1

PCS IN

2

PCS V

GSM V

3

APC

GND

4

5

APC

GSM IN

6

7

VCC GSM OUT

ü

SiGe HBT

Si CMOS

14

13

12

11

10

9

8

Functional Block Diagram

PCS OUT

GND

GND

VCC

GND

GND

Package Style: Module

Features

• Single 2.9V to 4.7V Supply Voltage

• +35.5dBm GSM Output Pwr at 3.5V

• +33.0dBm DCS/PCS Output Pwr at 3.5V

• 55% GSM and 50% DCS/PCS Efficiency

• Supports GSM, E-GSM and DCS/PCS

•9mmx10mmPackageSize

Ordering Information

RF3108 Triple-Band GSM/DCS/PCS Power Amp Module
RF3108 PCBA Fully Assembled Evaluation Board

RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro,NC 27409, USA

Tel [phone]

Fax [phone]

http://www.rfmd.com

Rev A3 010702

2-261

2

RF3108

Absolute Maximum Ratings

Parameter Rating Unit

Supply Voltage -0.5 to +6.0 V
Power Control Voltage (V

) -0.5 to +3.0 V

APC1,2

DC Supply Current 2400 mA
Input RF Power +13 dBm
Duty Cycle at Max Power 50 %
Output Load VSWR 8:1
Operating Case Temperature -40 to +85 °C
Storage Temperature -55 to +150 °C

DC

Caution! ESD sensitive device.

RF Micro Devices believesthe furnishedinformation is correctand accurate
at the time of this printing. However,RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).

Specification

Unit Condition

Temp= +25°C, VCC=3.5V,V
P

=6dBm, Freq=880MHz to 915MHz,

IN

POWER AMPLIFIERS

Overall (GSM Mode)

Parameter

Min. Typ. Max.

25% Duty Cycle, Pulse Width=1154µs
Operating Frequency Range 880 to 915 MHz
Maximum Output Power +34.5 35.5 dBm Temp = 25°C, V

+32.0 dBm Temp=+85°C, V

Total Efficiency 47 55 % At P

OUT,MAX,VCC

=3.5V,V

CC

=2.9V,V

CC

=3.5V

Input Power for Max Output +4 +6 +8 dBm
Output No ise Power -72 dBm RBW=100kHz, 925MHz to 935MHz,

> 34.5 dBm

P

OUT

-81 dBm RBW=100kHz, 935MHz to 960MHz,
> 34.5 dBm

P

OUT

Forward Isolation -30 dBm V

=0.2V,PIN=+8dBm

APCGSM

Second Harmonic -40 -35 dB c
Third Harmonic -50 -43 dBc
All other non harmonic spurious -36 dBm
Input Impedance 50 Ω
Input VSWR 2.5:1 P

Output Load VSWR 8:1 Spurious<-36dBm, V

OUT,MAX

-5dB<P

OUT<POUT,MAX

APCGSM

RBW=100kHz

Output Load Impedance 50 Ω Load impedan ce presented at RF OUT pad

Power Control V

Power Control “ON” 2.6 V Max. P
Power Control “OFF” 0.2 0.5 V Min. P
Power Control Range 70 dB V
Gain Control Slope 100 dB/V P

APC1

, Voltage supplied to the input

OUT

, Voltage supplied to the input

OUT

=0.2Vto 2.6V

APC1,2

=-10 dBmto35dBm

OUT

APC Input Capacitance 10 pF DC to 2MHz
APC Input Current 4.5 5 mA V

10 µAV

Turn On/Off Time 2 µSV

=2.6V

APC

=0V

APC

=0to2.6V

APC

Overall Power Supply

Power Supply Voltage 3.5 V Specifications

2.9 4.7 V Nominal operating limits, P

Power Supply Current 2 A DC Current at P

110µAPIN<-30 dBm,V

Temp= -40to +85°C

OUT,MAX
APC1,2

=0.2V,

=2.6V,

APCGSM

APCGSM

=2.6V

=2.6V

APCGSM

=0.2V to 2.6V,

<+33dBm

OUT

2-262

Rev A3 010702

RF3108

Parameter

Min. Typ. Max.

Overall (DCS/PCS Mode)

Operating Frequency Range 1710 to 1910 MHz
Maximum Output Power +32 +33 dBm Temp=25°C, V

Total Efficiency 45 52 % At P

Recommended Input Power

Range

Output Noise Power -77 dBm RBW=100kHz, 1805MHz to 1880MHz and

Forward Isolation -37 -30 dBm V
Second Harmonic -60 -45 dBc P
Third Harmonic -65 -50 dBc

All other spurious -36 dBm
Input Impedance 50 Ω
Input VSWR - 2.5 P

Output Load VSWR 8:1 Spurious<-36dBm,

Output Load Impedance 50 Ω Load impedance presented at RF OUT pin

Power Control V

Power Control “ON” 2.6 V Max. P
Power Control “OFF” 0.2 0.5 V Min. P
Power Control Range 62 68 dB V
Gain Control Slope 100 dB/V P
APC Input Capacitance 10 pF DC to 2 MHz

APC Input Current 4.5 5 mA V

Turn On/Off TIme 100 ns V

APC2

Specification

31.5 32.5 dBm 1850MHz to 1910MHz

29.0 29.5 dBm Temp=+85°C, V

29.5 30 dBm 1710MHz to 1785MHz

40 47 % At P

+4 +6 +8 dBm

10 µAV

Unit Condition

Temp=25°C, VCC=3.5V,
V

APCDCS/PCS

Freq=1710MHz to 1910MHz,
25% Duty Cycle, Pulse Width=1154µs

V

APCDCS/PCS

1850MHz to 1910MHz

OUT,MAX,VCC

1710MHz to 1785MHz

OUT,MAX,VCC

1850MHz to 1910MHz

1930MHz to 1990MHz,
P

OUT
APCDCS/PCS

OUT,

OUT,MAX

V

APCDCS/PCS

APC1,2

OUT

APC

=0V

APC
APC

=2.6V,PIN=6dBm,

=3.5V,

CC

=2.6V, 1710MHz to 1785MHz

=2.9V,V

CC

=3.5V,

=3.5V,

> 34.5dBm, VCC=3.5V

=0.2V,PIN=+8dBm

=+32.5dBm

-5dB<P

OUT<POUT,MAX

=0.2V to 2.6V, RBW=100kHz

, Voltage supplied to the input

OUT

, Voltage supplied t o the input

OUT

=0.2V to 2.6V, PIN=+8dBm

=-10dBm to +33dBm

=2.6V

=0to2.6V

APC

=2.6V,

Overall Power Supply

Power Supply Voltage 3.5 V Specifications

2.9 4.7 V Nominal operating limits, P

Power Supply Current 1.3 A DC Current at P

110µAPIN<-30dBm, V

Temp =-40 to +85 °C

OUT,MAX

APC1,2

=0.2V,

OUT

<+33dBm

2

POWER AMPLIFIERS

Rev A3 010702

2-263

2

RF3108

Pin Function Description Interface Schematic

1 VCC1
2 DCS/PCS IN
3DCS/PCS

V

APC

4GND
5GSMV

APC

6GSMIN
7 VCC2
8GSMOUT

9GND

POWER AMPLIFIERS

10 GND
11 VCC3

12 GND
13 GND
14 DCS/PCS

OUT

Pkg

GND

Base

Power Supply for the driver stage of the DCS/PCS band.
RF Input to the DCS/PCS band. This is a 50Ω input.
Power control for the pre-amplifier, driver, and output stage of the DCS/

PCS band.
Ground connection to overall package.

Power control for the pre-amplifier, driver, and output stage of the GSM
band.

RF input to the GSM band. This is a 50Ω input.
Power supply for the driver stage of the GSM band.
RF output for the GSM band. This is a 50Ω output. The output load line

matching i s contained internal to the package.
Ground connection to overall package.

Ground connection to overall package.
Power supply for the pre-amplifier and output stage for both the DCS/

PCS and GSM bands.
Ground connection to overall package.

Ground connection to overall package.
RF output for the DCS /PCS band. This is a 50Ω output. The output

load line matching is contained internal to the package.
Ground connection to overall package.

2-264

Rev A3 010702

RF3108

Theory of Operation and Application Information

The RF3108 is a triple-band, GSM/DCS/PCS power
amplifier with two separate RF inputs and outputs that
are internally matched to 50Ω. Pins 2 and 14 of the
device provide the RF input and output for the DCS/
PCS band, which is optimized for performance
between 1710MHz and 1910MHz. Pins 5 and 8 of the
device provide the RF input and output for the GSM
band, which is optimized for performance between
880 MHz and 915MHz. Both bands include an internal
DC-blocking capacitor to protect the device from exter­nal DC source inputs and block internal DC from exit­ing the inputs and outputs of the module. The
performance is similar to the performance of the
RF2173 and RF2174 MIMIC devices used in dual- or
triple-band applications. However, the RF3108 module
includes the matching and bypass capacitors required
for operation internal to the 9mm x10mm module.
However, some external components are required to
improve stability, isolation and noise power perfor­mance. These components are included on the evalua­tion board and schematic, and will be described in the
following paragraphs.

The GSM 900MHz band provides 32dB and the DCS/
PCS 1710 MHz to 1910MHz band provides 28dB of
small signal gain at full output power. Therefore, the
drive level required to fully saturate the output is
+4 dBm for each band. Based upon HBT (Heterojunc­tion Bipolar Transistor) technology, the part requires
only a single positive 3V supply to operate to full spec­ification. The DCS/PCS band input is located at pin 2
of the device and requires no external components.
The GSM 900MHz band input is located at pin 6 of the
device and also does not require external components.
However, a 180Ω resistor is included at the input of the
GSM band to improve the input impedance and isola­tion performance at low V

both high and low bands are internally m atched to 50Ω
at the output of pin 14 and 8. A 50Ω microstrip should
be used to interface to the input and output connec­tions.

levels. The output for

APC

Power control for the GSM 900MHz band is provided
through pin 5 of the device, and pin 3 for the DCS/PCS
band. The V

bypass capacitors and will require some external filter­ing. Because the V

the device, the user has the option of choosing a
capacitor value that meets the control loop BW and fil­tering requirement for various applications. In most typ­ical applications with a closed loop power control, the
recommended bypass capacitor for this input is
approximately 33 pF for the GSM band, and 12pF for
the DCS/PCS band. However in open loop operation, a
10 nF V

bands to filter noise from the external V
10nF capacitor is installed on pins 3 and 5 on the cur-

rent evaluation board (see the evaluation board sche­matic). Noise on the V

power perfor mance of the device, so c are should be
used to providea clean V

cially impor tant when measuring noise power or stabil­ity performance.

The voltage supply V
capacitors and inductors to filter unwanted noise on

the DC supply voltage. However, the main V
the device at pin 11 requires some additional bypass

capacitors as shown in the evaluation board sche­matic. C5 (1uF) and C4 (3.3uF) are required to
improve the stability performance.

All the internal ground connections are connected to a
series of ground pads located on the backside of the
package as shown in the pin out diagram. Pins 4, 9,
10, 12, and 13 are also ground connections. The final
stages of both bands are connected to the ground
pads on the backside of the package. Therefore this
ground connection is essential to dissipate heat and to
provide proper current flow. Refer to the evaluation
board layout as an example of the vias locations and
quantity required for proper connection.

APC

inputs do not contain any internal

APC

filtering capacitor is external to

APC

bypass capacitor is recommended for both

source. A

APC

input will degrade the noise

APC

input signal. This is espe-

APC

contains internal bypass

CC

input to

CC

2

POWER AMPLIFIERS

Rev A3 010702

2-265

RF3108

Pin Out

2

VCC

PCS IN

PCS VAPC

GND

1 14GND GNDGND GND

2

GND

3

4

GNDGND

GND GND

GND GND

GND GND

13

12

11

PCS OUT

GND

GND

VCC

POWER AMPLIFIERS

GSM VAPC

GSM IN

VCC GSM OUT

5

GND

6

7 8GND GNDGND GND

GND GND

GND GND

Top View

10

GND

9

GND

2-266

Rev A3 010702

RF3108

Application Schemati c

V

CC

DCS/PCS

RF IN

DCS/PCS

VAPC

GSM

VAPC

GSM

RF IN

50

Ω µ

1µF

50

Ω µ

strip

4.7µF

strip

50

Ω µ

strip

50

Ω µ

strip

50

Ω µ

strip

V

CC

1

2

3

4

5

6

7

14

13

12

11

10

9

8

PCS/DCS

RF OUTPUT

V

CC

RF OUTPUT

GSM

2

POWER AMPLIFIERS

Evaluation Board Schemati c

(Download Bill of Materials from www.rfmd.com.)

C1*

1nF

VCC

C2*

10 nF

P1

1

CON1

GND

P2-1 VCC

P2

1

CON1

J1

DCS/PCS

RF IN

J5

DCS/PCS

VAPC2

J6

GSM

VAPC1

J3

GSM

RF IN

VCC

Rev A3 010702

50 Ω µstrip

50 Ω µstrip

C7

10 nF

50 Ω µstrip

C6

10 nF

50 Ω µstrip

180 Ω

C3*

10 nF

R1

J2

PCS/DCS

RF OUTPUT

+

J4

GSM

RF OUTPUT

C5

1 µF

50 Ω µstrip

VCC

C4

3.3 µF

50 Ω µstrip

1

2

3

4

5

6

7

Components w ith (*) following the reference designator
should not be populated on the evaluation board.

14

13

12

11

10

9

8

3108400B

2-267

2

RF3108

Evaluation Board Layout

Board Size 2.0” x 2.0”

Board Thickness 0.031”; Board Material FR-4; Multi-Layer

POWER AMPLIFIERS

2-268

Rev A3 010702

RF3108

2nd and 3rd Harmonic Performance

-35.0

-40.0

-45.0

GSMBand @3.5VV

2nd Fo(dBc)
3rdFo(dBc)

Harmonic Level (dBc)

-50.0

-55.0

880.0 885.0 890.0 895.0 900.0 905.0 910.0 915.0

,+6dBmPIN,2.6VV

CC

Frequency

APC

Powerand EfficiencyPerformance

36.0

35.8

35.6

@3.5VV

,2.6VV

CC

,+6dBmP

APC

IN

53.0

52.0

51.0

50.0

IsolationPerformanceGSM Band

-29.0

-30.0

-31.0

-32.0

-33.0

@3.5VV

Iso@+8dBmPin
Iso@+4dBmPin
Iso@+6dBmPin

Isolation (dBm)

-34.0

-35.0

-36.0

880.0 885.0 890.0 895.0 900.0 905.0 910.0 915.0

,2.6VV

CC

Frequency(MHz)

APC

PowerControl Response

40.0

30.0

20.0

10.0

@3.5VV

Power
Efficiency

,2.6VV

CC

,+6dBmPIN,900MHz

APC

2

POWER AMPLIFIERS

60.0

50.0

40.0

35.4

Power (dBm)

35.2

35.0

34.8

Power(+6dBmPin)
Efficiency (+6dBm Pin)

880.0 885.0 890.0 895.0 900.0 905.0 910.0 915.0

Frequency

Isolation Performance DCS/PCS Band

-36.0

-36.5

-37.0

-37.5

Isolation (dBm)

-38.0

-38.5

-39.0

1700.0 1710.0 1720.0 1730.0 1740.0 1750.0 1760.0 1770.0 1780.0 1790.0

@3.5VV

CC

,2.6V

Frequency

DCS/PCS BAND

APC

Iso@+4dBmPin
Iso@+6dBmPin
Iso@+8dBmPin

49.0

48.0

47.0

46.0

45.0

0.0

Power (dBm)

Efficiency (%)

-10.0

-20.0

-30.0

-40.0

0.1 0.3 0.4 0.6 0.7 0.9 1.0 1.2 1.3 1.5 1.6 1.8 1.9 2.1 2.2 2.4 2.5 2.7 2.8

30.0

Efficiency (%)

20.0

10.0

0.0

PowerControlVoltage(V)

Isolation Performance DCS/PCS Band

-33.0

-34.0

-35.0

-36.0

Isolation (dBm)

-37.0

-38.0

-39.0

1800.0 1820.0 1840.0 1860.0 1880.0 1900.0

@3.5VV

Iso@+4dBmPin
Iso@+6dBmPin
Iso@+8dBmPin

CC

,2.6V

Frequency

DCS/PCS Band

APC

Rev A3 010702

2-269

RF3108

-

0123456

2

DCS Band Power and Efficient Performance

35.0

34.5

34.0

33.5

33.0

Power (dBm)

32.5

32.0

31.5

POWER AMPLIFIERS

31.0

1700.0 1710.0 1720.0 1730.0 1740.0 1750.0 1760.0 1770.0 1780.0 1790.0

@3.5VV

,2.6VV

CC

Frequency

,+8dBmP

APC

IN

Power(dBm)
Efficiency

52.0

50.0

48.0

46.0

44.0

42.0

40.0

Power (dBm)

Efficiency (%)

2nd and 3rd Harmonic Performance (DCS/PCS Band)

-50.0

-55.0

-60.0

@3.5VV

,+6dBmPIN,2.6VV

CC

APC

2nd Fo(dBc)

3rdFo(dBc)

PCS Band Power and Efficiency Performance

35.0

34.5

34.0

33.5

33.0

32.5

32.0

31.5

31.0

1800.0 1820.0 1840.0 1860.0 1880.0 1900.0

@3.5VV

,2.6VV

CC

Frequency

,+8dBmP

APC

IN

Power(dBm)
Efficiency (%)

Power Control Response

40

30

20

10

@3.5V, 2.6V V

Power
Efficiency

,+6dBmPIN, 1750MHz

APC

51.0

49.0

47.0

45.0

Efficiency (%)

43.0

41.0

39.0

-65.0

Harmonic (dBc)

-70.0

-75.0

-80.0

1700.0 1730.0 1760.0 1790.0 1820.0 1850.0 1880.0 1910.0

Frequency

0

Power (dBm)

-10

-20

-30

-40

0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8

PowerControlVoltage (V)

PowerControl Response

Power (dBm)

-10.0

-20.0

-30.0

40.0

30.0

20.0

10.0

@3.5V V

Power
Efficiency

0.0

,2.6VV

CC

,+6dBmPIN, 1850MHz

APC

60.0

50.0

40.0

30.0

Efficiency (%)

20.0

10.0

-40.0

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8

0.0

PowerControlVoltage(V)

2-270

Rev A3 010702