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POWER AMPLIFIERS
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro,NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
3VREG
2RF IN
1VCC1
6RFOUT
7GND
5VCC24
VMODE
RF3100-3K
3V 1700MHZ LINEAR AMPLIFIER MODULE
• 3V CDMA Korean-PCS Handsets
• Spread-Spectrum Systems
• Designed for Compatibility with Qualcomm
Chipsets
The RF3100-3K is a high-power, high-efficiency linear
amplifier IC targeting 3V hand-held systems. The device
is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has
been designed for use as the final RF amplifier in dualmode 3V CDMA hand-held digital cellular equipment,
spread-spectrum systems, and other applications in the
1750 MHz to 1780MHz band. The RF3100-3K has a digital control line for low power application to reduce the current drain. The device is self-contained with 50Ω input
and output that is matched to obtain optimum power, efficiency, and linearity characteristics. The module is an
ultra-small 6mmx6mm land grid array with backside
ground.
• Input/Output Internally Matched@50Ω
• Single 3V Supply
• 28dBm Linear Output Power
• -141dBm/Hz Noise Power
• 35% Linear Efficiency
• 45mA Idle Current (Low Power Mode)
RF3100-3K 3V 1700MHz Linear Amplifier Module
RF3100-3K PCBA Fully Assembled Evaluation Board
2
Rev A3 011017
6.0 sq
0.1003.000
4.390
0.600
0.800 sq
typ
NOTE: Nominal thickness, 1.55 mm.
1.700
0.100
2.500
Dimensions in mm.
Package Style: LGM (6mmx6mm)
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POWER AMPLIFIERS
Absolute Maximum Ratings
Parameter Rating Unit
Supply Voltage (RF off) +8.0 V
DC
Supply Voltage (P
OUT
≤29dBm) +5.2 V
DC
Control Voltage (V
REG
)+4.2V
DC
Mode Voltage (V
MODE
)+3.5V
DC
Input RF Power +10 dBm
Operating Case Temperature -30 to +110 °C
Storage Temperature -30 to +150 °C
Parameter
Specification
Unit Condition
Min. Typ. Max.
High Power State
(V
MODE
Low)
Typical Performance a t VCC=3.2V,
V
REG
=2.85V, T
AMB
=25°C,
Frequency=1750MHz to 1780MHz
(unless otherwise specified)
Frequency Range 1750 1780 MHz
Linear Gain 25.5 27.5 dB
Second Harmonic -49 dBc
Third Harmonic -52 dBc
Maximum Linear Output Power
(CDMA Modulation)
28 dBm
Total Linear Efficiency 35 % P
OUT
=28dBm
Adjacent Channel Power
Rejection
-46 -44.5 dBc ACPR@1.25MHz, P
OUT
=28dBm
-60 -57.5 dBc ACPR@2.25MHz, P
OUT
=28dBm
Input VSWR <2:1
Output VSWR 10:1 No damage.
6:1 No oscillations. >-70dBc
Noise Power -141 dBm/Hz At 90MHz offset.
Low Power State
(V
MODE
High)
Typical Performance a t VCC=3.2V,
V
REG
=2.85V, T
AMB
=25°C,
Frequency=1750MHz to 1780MHz
(unless otherwise specified)
Frequency Range 1750 1780 MHz
Linear Gain 17 20 dB
Second Harmonic -49 dBc
Third Harmonic -52 dBc
Maximum Linear Output Power
(CDMA Modulation)
16 dBm
Adjacent Channel Power
Rejection
-52 -46.5 dBc ACPR@1.25MHz
-66 -61 dBc ACPR@2.25MHz
Input VSWR <2:1
Output VSWR 10:1 No damage.
6:1 No oscillations. >-70dBc
Caution! ESD sensitive device.
RF Micro Devices believesthe furnishedinformation is correctand accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice.RF Micro Devices does not
assume responsibility for the use of the described product(s).
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POWER AMPLIFIERS
Parameter
Specification
Unit Condition
Min. Typ. Max.
DC Supply
T
AMB
=25°C
Supply Voltage 3.2 3.7 4.2 V
Quiescent Current 170 240 mA V
MODE
=Low, V
REG
=2.85V
50 80 mA V
MODE
=High, V
REG
=2.85V
V
REG
Current 6 10 mA
V
MODE
Current 1.5 mA
Turn On/Off Time 6 µs
Total Current (Power Down) 5 10 µAV
REG
=Low, V
MODE
=Low
V
REG
“Low” Voltage 0 0.5 V
V
REG
“High” Voltage 2.8 2.85 2.9 V
V
MODE
“Low” Voltage 0 0.5 V
V
MODE
“High” Voltage 2.0 3.0 V
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POWER AMPLIFIERS
Pin Function Description Interface Schematic
1 VCC1
First stage collector supply. A low frequency decoupling capacitor
(e.g., 1µF) is required.
2RFIN
RF input internally matched to 50Ω.This input is internally AC-coupled.
3VREG
Regulated voltage supply for amplifier bias. In Power Down mode, both
V
REG
and V
MODE
need to be LOW (<0.5V).
4VMODE
For nominal operation (High Power Mode), V
MODE
is set LOW. When
set HIGH, devices are turned off to improve efficiency.
5 VCC2
Output stag e collector supply. A low frequency decoupling capacitor
(e.g., 1µF) is required.
6RFOUT
RF output internally matched to 50Ω.T his output is internally
AC-coupled.
7GND
Ground conn ection. Connect to package base ground . For best performance, keep traces physically short and connect immediately to
ground plane.
Pkg
Base
GND
Ground connection. The backside of the package should be soldered to
a top side ground pad which is connected to the ground plane with multiple vias. The pad should have a short thermal path to the ground
plane.
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POWER AMPLIFIERS
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
3
2
1
6
7
54
50 Ωµstrip
J6
RF OUT
50 Ωµstrip
J2
RF IN
C2
4.7 µF
C2
4.7 µF
VCC1
VMODE VCC2
VREG
C4
4.7 µF
C3
4.7 µF
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POWER AMPLIFIERS
Evaluation Board Layout
Board Size 1.5” x 1.5”
Board Thickness 0.032”, Board Material FR-4, Multi-Layer, Ground Plane at 0.014”
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