2-274
RF3100-3K
Rev A3 011017
2
POWER AMPLIFIERS
Absolute Maximum Ratings
Parameter Rating Unit
Supply Voltage (RF off) +8.0 V
DC
Supply Voltage (P
OUT
≤29dBm) +5.2 V
DC
Control Voltage (V
REG
)+4.2V
DC
Mode Voltage (V
MODE
)+3.5V
DC
Input RF Power +10 dBm
Operating Case Temperature -30 to +110 °C
Storage Temperature -30 to +150 °C
Parameter
Specification
Unit Condition
Min. Typ. Max.
High Power State
(V
MODE
Low)
Typical Performance a t VCC=3.2V,
V
REG
=2.85V, T
AMB
=25°C,
Frequency=1750MHz to 1780MHz
(unless otherwise specified)
Frequency Range 1750 1780 MHz
Linear Gain 25.5 27.5 dB
Second Harmonic -49 dBc
Third Harmonic -52 dBc
Maximum Linear Output Power
(CDMA Modulation)
28 dBm
Total Linear Efficiency 35 % P
OUT
=28dBm
Adjacent Channel Power
Rejection
-46 -44.5 dBc ACPR@1.25MHz, P
OUT
=28dBm
-60 -57.5 dBc ACPR@2.25MHz, P
OUT
=28dBm
Input VSWR <2:1
Output VSWR 10:1 No damage.
6:1 No oscillations. >-70dBc
Noise Power -141 dBm/Hz At 90MHz offset.
Low Power State
(V
MODE
High)
Typical Performance a t VCC=3.2V,
V
REG
=2.85V, T
AMB
=25°C,
Frequency=1750MHz to 1780MHz
(unless otherwise specified)
Frequency Range 1750 1780 MHz
Linear Gain 17 20 dB
Second Harmonic -49 dBc
Third Harmonic -52 dBc
Maximum Linear Output Power
(CDMA Modulation)
16 dBm
Adjacent Channel Power
Rejection
-52 -46.5 dBc ACPR@1.25MHz
-66 -61 dBc ACPR@2.25MHz
Input VSWR <2:1
Output VSWR 10:1 No damage.
6:1 No oscillations. >-70dBc
Caution! ESD sensitive device.
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at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice.RF Micro Devices does not
assume responsibility for the use of the described product(s).