Datasheet RF3100-3, RF3100-3PCBA Datasheet (RF Micro Devices)

ü

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2

POWER AMPLIFIERS

Product Description

Ordering Information

Typical Applications

Features

Functional Block Diagram

RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro,NC 27409, USA

Tel [phone]

Fax [phone]

http://www.rfmd.com

Optimum Technology Matching® Applied

Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS

SiGe HBT

Si CMOS

3VREG

2RF IN

1VCC1

6RFOUT

7GND

5VCC24

VMODE

RF3100-3

3V 1900MHZ LINEAR AMPLIFIER MODULE

• 3V CDMA US-PCS Handsets

• 3V CDMA2000/1X PCS Handsets

• Spread-Spectrum Systems

• Designed for Compatibility with Qualcomm
Chipsets

The RF3100-3 is a high-power, high-efficiency linear
amplifier IC targeting 3V hand-held systems. The device
is manufactured on an advanced Gallium Arsenide Het­erojunction Bipolar Transistor (HBT) process, and has
been designed for use as the final RF amplifier in dual­mode 3 V CDMA hand-held digital cellular equipment,
spread-spectrum systems, and other applications in the
1850 MHz to 1910MHz band. The RF3100-3 has a digital
control line for low power application to reduce the cur­rent drain. The device is self-contained with 50Ω input
and output that is matched to obtain optimum power, effi­ciency, and linearity characteristics. The module is an
ultra-small 6mmx6mm land grid array with backside
ground.

• Input/Output Internally Matched@50Ω

• Single 3V Supply

• 28dBm Linear Output Power

• -141dBm/Hz Noise Power

• 35% Linear Efficiency

• 45mA Idle Current (Low Power Mode)

RF3100-3 3V 1900MHz Linear Amplifier Module
RF3100-3 PCBA Fully Assembled Evaluation Board

2

Rev A2 011017

6.0 sq

0.1003.000

4.390

0.600

0.800 sq
typ

NOTE: Nominal thickness, 1.55 mm.

1.700

0.100

2.500

Dimensions in mm.

Package Style: LGM (6mmx6mm)

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POWER AMPLIFIERS

Absolute Maximum Ratings

Parameter Rating Unit

Supply Voltage (RF off) +8.0 V

DC

Supply Voltage (P

OUT

≤28dBm) +5.2 V

DC

Control Voltage (V

REG

)+4.2V

DC

Mode Voltage (V

MODE

)+3.5V

DC

Input RF Power +10 dBm
Operating Case Temperature -30 to +110 °C
Storage Temperature -30 to +150 °C

Parameter

Specification

Unit Condition

Min. Typ. Max.

High Power State

(V

MODE

Low)

Typical Performance a t VCC=3.2V,
V

REG

=2.85V, T

AMB

=25°C,

Frequency=1850MHz to 1910MHz

(unless otherwise specified)
Frequency Range 1850 1910 MHz
Linear Gain 24 26.5 dB
Second Harmonic -43 dBc
Third Harmonic -56 dBc
Maximum Linear Output Power

(CDMA Modulation)

28 dBm

Total Linear Efficiency 35 % P

OUT

=28dBm

Adjacent Channel Power

Rejection

-48 -45 dBc ACPR @1.25MHz, VCC=3.4V,
P

OUT

=28dBm

-62 -58 dBc ACPR @2.25MHz, V

CC

=3.4V,

P

OUT

=28dBm

Input VSWR <2.5:1
Output VSWR 10:1 No damage.

6:1 No oscillations. >-70dBc

Noise Power -141 dBm/Hz At 80MHz offset.

Low Power State

(V

MODE

High)

Typical Performance a t VCC=3.2V,
V

REG

=2.85V, T

AMB

=25°C,

Frequency=1850MHz to 1910MHz
(unless otherwise specified)

Frequency Range 1850 1910 MHz
Linear Gain 14 19 dB
Second Harmonic -43 dBc
Third Harmonic -56 dBc
Maximum Linear Output Power

(CDMA Modulation)

16 dBm

Adjacent Channel Power

Rejection

-52 -46 dBc ACPR @1.25MHz

-66 -59 dBc ACPR @2.25MHz

Input VSWR <2.5:1
Output VSWR 10:1 No damage.

6:1 No oscillations. >-70dBc

Caution! ESD sensitive device.

RF Micro Devices believesthe furnishedinformation is correctand accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice.RF Micro Devices does not
assume responsibility for the use of the described product(s).

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POWER AMPLIFIERS

Parameter

Specification

Unit Condition

Min. Typ. Max.

DC Supply

T

AMB

=25°C

Supply Voltage 3.2 3.7 4.2 V
Quiescent Current 170 240 mA V

MODE

=Low, V

REG

=2.85V

50 80 mA V

MODE

=High, V

REG

=2.85V

V

REG

Current 6 10 mA

V

MODE

Current 1.5 mA

Turn On/Off Time 6 µs
Total Current (Power Down) 5 10 µAV

REG

=Low, V

MODE

=Low

V

REG

“Low” Voltage 0 0.5 V

V

REG

“High” Voltage 2.8 2.85 2.9 V

V

MODE

“Low” Voltage 0 0.5 V

V

MODE

“High” Voltage 2.0 3.0 V

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POWER AMPLIFIERS

Pin Function Description Interface Schematic

1 VCC1

First stage collector supply. A low frequency decoupling capacitor
(e.g., 1µF) is required.

2RFIN

RF input internally matched to 50Ω.This input is internally AC-coupled.

3VREG

Regulated voltage supply for amplifier bias. In Power Down mode, both
V

REG

and V

MODE

need to be LOW (<0.5V).

4VMODE

For nominal operation (High Power Mode), V

MODE

is set LOW. When

set HIGH, devices are turned off to improve efficiency.

5 VCC2

Output stag e collector supply. A low frequency decoupling capacitor
(e.g., 1µF) is required.

6RFOUT

RF output internally matched to 50Ω.This output is internally
AC-coupled.

7GND

Ground conn ection. Connect to package base ground . For best perfor­mance, keep traces physically short and connect immediately to
ground plane.

Pkg

Base

GND

Ground connection. The backside of the package should be soldered to
a top side ground pad which is connected to the ground plane with mul­tiple vias. The pad should have a short thermal path to the ground
plane.

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POWER AMPLIFIERS

Evaluation Board Schematic

(Download Bill of Materials from www.rfmd.com.)

3

2

1

6

7

54

50 Ωµstrip

J6

RF OUT

50 Ωµstrip

J2

RF IN

C2

4.7 µF

C2

4.7 µF

VCC1

VMODE VCC2

VREG

C4

4.7 µF

C3

4.7 µF

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Evaluation Board Layout

Board Size 1.5” x 1.5”

Board Thickness 0.032”, Board Material FR-4, Multi-Layer, Ground Plane at 0.014”