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POWER AMPLIFIERS
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro,NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
3VREG
2RF IN
1VCC1
6RFOUT
7GND
5VCC24
VMODE
RF3100-2
3V 900MHZ LINEAR AMPLIFIER MODULE
• 3V CDMA/AMPS Cellular Handsets
• 3V CDMA2000/1X Cellular Handsets
• Spread-Spectrum Systems
• Designed for Compatibility with Qualcomm
Chipsets
The RF3100-2 is a high-power, high-efficiency linear
amplifier module targeting 3 V hand-held systems. The
deviceis manufacturedon an advanced Gallium Arsenide
Heterojunction Bipolar Transistor (HBT) process, and has
been designed for use as the final RF amplifier in dualmode 3V CDMA/AMPS hand-held digital cellular equipment, spread-spectrum systems, and other applications
in the 824MHz to 849MHz band. The RF3100-2 has a
digital control line for low power application to reduce the
current drain. The device is self-contained with 50Ω input
and output that is matched to obtain optimum power, efficiency, and linearity characteristics. The module is an
ultra-small 6mmx6mm land grid array with backside
ground.
• Input/Output Internally Matched@50Ω
• Single 3V Supply
• 28dBm Linear Output Power
• 29dB Linear Gain
• 45mA Idle Current
RF3100-2 3V 900MHz Linear Amplifier Module
RF3100-2 PCBA Fully Assembled Evaluation Board
2
Rev A3 011017
6.0 sq
0.1003.000
4.390
0.600
0.800 sq
typ
NOTE:
Nominal thickness, 1.55 mm.
1.700
0.100
2.500
Dimensions in mm.
Package Style: LGM (6mmx6mm)
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POWER AMPLIFIERS
Absolute Maximum Ratings
Parameter Rating Unit
Supply Voltage (RF off) +8.0 V
DC
Supply Voltage (P
OUT
≤31dBm) +5.2 V
DC
Control Voltage (V
REG
)+4.2V
DC
Input RF Power +10 dBm
Mode Voltage (V
MODE
)+3.5V
DC
Operating Case Temperature -30 to +110 °C
Storage Temperature -30 to +150 °C
Parameter
Specification
Unit Condition
Min. Typ. Max.
High Power Sta te
(V
MODE
Low)
Typical Performance at VCC=3.2V,
V
REG
=2.85V,T
AMB
=25°C,
Frequency=824MHz to 849MHz
(unless otherwise specified)
Frequency Range 824 849 MHz
Linear Gain 26 29 dB
Second Harmonic -35 dBc
Third Harmonic -40 dBc
Maximum Linear Output Power
(CDMA Modulation)
28 dBm
Total Linear Efficiency 35 % V
CC
=3.2V, P
OUT
=28dBm
(room temperature)
Adjacent Channel Power
Rejection
-48 -45 dBc ACPR@885kHz, P
OUT
=Max P
OUT
-57.0 -54.5 dBc ACPR@1980kHz, P
OUT
=MaxP
OUT
Input VSWR <2:1
Output VSWR 10:1 No damage.
6:1 No oscillations. >-70dBc
Noise Power -135 dBm/Hz At 45MHz offset.
Low Power State
(V
MODE
High)
Typical Performance at VCC=3.2V,
V
REG
=2.85V,T
AMB
=25°C,
Frequency=824MHz to 849MHz
(unless otherwise specified)
Frequency Range 824 849 MHz
Linear Gain 18 21 dB
Second Harmonic -35 dBc
Third Harmonic -40 dBc
Maximum Linear Output Power
(CDMA Modulation)
16 dBm
Adjacent Channel Power
Rejection
-51 -46 dBc ACPR@885kHz, P
OUT
=Max P
OUT
-62 -59 dBc ACPR @1980kHz, P
OUT
=MaxP
OUT
Input VSWR 2.5:1
Output VSWR 10:1 No damage.
6:1 No oscillations. >-70dBc
Caution! ESD sensitive device.
RF Micro Devices believesthe furnishedinformation is correctand accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice.RF Micro Devices does not
assume responsibility for the use of the described product(s).
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POWER AMPLIFIERS
Parameter
Specification
Unit Condition
Min. Typ. Max.
FM M ode
Typical Performance at VCC=3.2V,
V
REG
=2.85V, T
AMB
=25°C,
Frequency=824MHz to 849MHz
(unless otherwise specified)
Frequency Range 824 849 MHz
Gain 28 dB
Second Harmonic -35 dBc
Third Harmonic -40 dBc
Max CW Output Power 31.5 dBm
Total Efficiency (AMPS mode) 44 % V
CC
=3.7V,V
REG
=2.85V,P
OUT
=31.5dBm
(room temperature)
Input VSWR <2:1
Output VSWR 10:1 No damage.
6:1 No oscillations. >-70dBc
DC Supply
T
AMB
=25°C
Supply Voltage Range 3.2 3.7 4.2 V
Quiescent Current 140 200 mA V
MODE
=Low, V
REG
=2.85V
45 80 mA V
MODE
=High, V
REG
=2.85V
V
REG
Current 10 mA V
MODE
=High
V
MODE
Current 1 mA
Turn On/Off Time <40 µsV
REG
switch from Low to High,
I
CC
to within 90% of the final value,
P
OUT
within 1dB of the final value
Total Current (Power Down) 3 5 µAV
REG
=Low, V
MODE
=Low
V
REG
“Low” Voltage 0 0.5 V
V
REG
“High” Voltage 2.8 2.85 2.9 V
V
MODE
“Low” Voltage 0 0.5 V
V
MODE
“High” Voltage 2.0 3.0 V
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Pin Function Description Interface Schematic
1 VCC1
First stage collector supply. A low frequency decoupling capacitor
(e.g., 4.7µF) is required.
2RFIN
RF input internally matched to 50Ω.This input is internally AC-coupled.
3VREG
Regulated voltage supply for amplifier bias. In Power Down mode, both
V
REG
and V
MODE
need to be LOW (<0.5V ).
4VMODE
For nominal operation (High Power Mode), V
MODE
is set LOW. When
set HIGH, devices are turned off to improve efficiency.
5 VCC2
Output stag e collector supply. A low frequency decoupling capacitor
(e.g., 4.7µF) is required.
6RFOUT
RF output internally matched to 50Ω.This output is internally
AC-coupled.
7GND
Ground conn ection. Connect to package base ground. For best performance, keep traces physically short and connect immediately to
ground plane.
Pkg
Base
GND
Ground connection. The backside of the package should be soldered to
a top side ground pad which is connected to the ground plane with multiple vias. The pad should have a short thermal path to the ground
plane.
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POWER AMPLIFIERS
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
3
2
1
6
7
54
50 Ωµstrip
J6
RF OUT
50 Ωµstrip
J2
RF IN
C1
4.7 µF
C2
4.7 µF
VCC1
VMODE VCC2
VREG
C4
4.7 µF
C3
4.7 µF
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POWER AMPLIFIERS
Evaluation Board Layout
Board Size 1.5” x 1.5”
Board Thickness 0.032”, Board Material FR-4, Multi-Layer, Ground Plane at 0.014”
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