Datasheet RF2104, RF2104PCBA-H, RF2104PCBA-L Datasheet (RF Micro Devices)

RF2104

2

Typical Applications

• 900MHz ISM Band Applications

• 400MHz Industrial Radios

• Driver for Higher Power Applications

Product Description

The RF2104 is a medium power amplifier IC. The device
is manufactured on a low cost Silicon process, and has
been designed for use as the final RF amplifier in UHF
radio transmitters operating between 400MHz and
1000 MHz. It may also be used as a dr iver amplifier in
higher power applications. The device is packaged in a
plastic quad-batwing 16-lead package, and is self-con­tained with the exception of the output matching network,
power supply feed line, and bypass capacitors. It pro­duces an output power level of up to 500mW (CW) at

3.6 V. The device can be used in 3 cell battery applica­tions. The maximum CW output at 3.6 V is +27 dBm. The
unit has a total gain of 26dB, depending upon the output
matching network.

MEDIUM POWER AMPLIFIER

• Portable Battery-Powered Equipment

• Commercial and Consumer Systems

• Base Station Equipment

-A-

0.393

0.386

0.020
REF

8° MA X

0° MIN

0.157

0.150

0.244

0.229

0.034

0.016

0.009

0.007

0.020

0.014

0.034 REF

0.068

0.053

0.008

0.004

0.068

0.064

2

POWER AMPLIFIERS

Optimum Technology Matching® Applied

Si BJT GaAs MESFETGaAs HBT

ü

Si Bi-CMOS

VCC1

GND

GND

VCC2

RF IN

GND

GND

PC

SiGe HBT

1

2

3

4

5

6

7

8

BIAS

Si CMOS

GND

16

GND

15

GND

14

RF OUT

13

RF OUT

12

GND

11

GND

10

GND

9

Functional Block Diagram

Package Style: CJ2BAT0

Features

• 400MHz to 1000MHz Operation

• Up to 500mW CW Output Power

• 26dB Small Signal Gain

• 40dB Gain Control Range

• Single 2.7V to 3.6V Supply

• 40% Efficiency

Ordering Information

RF2104 Medium Power Amplifier
RF2104 PCBA-L Fully Assembled Evaluation Board (830MHz)
RF2104 PCBA-H Fully Assembled Evaluation Board (915MHz)

RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro,NC 27409, USA

Tel [phone]

Fax [phone]

http://www.rfmd.com

Rev B4 010507

2-11

2

RF2104

Absolute Maximum Ratings

Parameter Rating Unit

Supply Voltage -0.5 to +6.0 V
Gain Control Voltage (VPC) -0.5 to +3.0 V
DC Supply Current 500 mA

Input RF Power +12 dBm
Output Load VSWR 20:1

Operating Ambient Temperature -40 to +85 °C
Storage Temperature -40 to +150 °C

DC

Caution! ESD sensitive device.

RF Micro Devices believesthe furnishedinformation is correctand accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).

Parameter

Overall

POWER AMPLIFIERS

Frequency Range 400 to 1000 MHz
Bandwidth 150 MHz With fixed matching network
Maximum Output Power +27 dBm V

Maximum Output Power +27 dBm V
Output Third Order Intercept +36 dBm VCC=3.6V
Power Added Efficiency 40 % V
Small Sig nal Gain 24 25 28 dB V
Gain Con trol Range 35 40 dB V
Second Harmonic -50 dBc Without external second harmonic trap

Third Harmonic -50 dBc
Noise Figure 5.5 7.0 dB
Input Impedance 50 Ω
Input Return Loss -20 -15 dB With external matching network; see appli-

Input Return Loss -10 dB Without external matching network
Output Impedance 50 Ω Not matched for maximum output power
Output Re turn Loss -13 dB Without external matching network
Load Impedance 5+j0 Ω Load Impedance for Optim al Power Match

Min. Typ. Max.

Specification

Unit Condition

T=25°C, VCC=3.6V, VPC=2.5V,
Z

=10Ω,PIN=+6dBm,Freq=850MHz

LOAD

=3.6V, PIN=+6dBm

CC

=3.0V, PIN=+6dBm

CC

=3.6V, P

CC

=3.6V, VPC=+2.5V,Freq= 850MHz

CC

=0Vto 2.5V

PC

cation schematic

=+27dBm, PIN=+6dBm

OUT

Power Supply

Power Supply Voltage 2.7 to 3.6 V
Power Supply Idle Current 250 300 mA V

Total "OFF" Current Drain 1 10 µ
Total "OFF" Current Drain 4 mA V
Current into PC pin 1 mA V
Current into PC pin 0 µ
Turn-on Time <100 ns V

A

A

=2.5V

PC

<0.25VDC; No RF input power

V

PC

<0.25VDC;PIN=+6dBm

PC

=2.5V

PC

=0V

V

PC

=0Vto VPC=+2.5V

PC

DC

2-12

Rev B4 010507

RF2104

Pin Function Description Interface Schematic

1VCC1

Powersupply for the bias circuits.This pin drawscurrent proportional to

.WhenVPCis 2.5V the maximum current is about 30mA. When

V

PC

V

goes down to 0V the current also goes down to 0mA.

PC

VCC1

PC

40

To Bias
Stages

Ω

2

2GND

3GND
4VCC2

5RFIN

6GND
7GND
8PC

9GND
10 GND
11 GND
12 RF OUT

Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane. A via hole under each
ground pin to the ground plane is re commended.

Same as pin 2.
Power supply for the driver stage and interstage matching. An external

decoupling capacitor is required. The electrical length between the pin
and this capacitor affects the gain. See the application schematic for
recommended line length for optimum gain. For operation at frequen­cies below 600MHz a series inductor is required.

50Ω RF input. DC voltages are present at this pin, and an extern al
blocking capacitor is required when connecting this pin to a DC path to
ground. For optimum impedance matching, a shunt inductor to ground
is recommended; see the application schematic for details.

Same as pin 2.
Same as pin 2.
Power control pin. A DC voltage between 0V and 3.0V can be applied

to control the gain. When no gain control is required this pin should be
connected to a fixed voltage between 2.5V and 3.0V. This pin draws
some current proportional to V

rent into this pin is about 1mA.
Same as pin 2.

Same as pin 2.
Same as pin 2.
RF output. T he power supply for the output stage also needs to be sup-

plied to this pin t h rough the external matching circuit. The load imped­ance to this pin should be 5+j0Ω for maximum output power.

. When VPCis 2.5V the maximum cur-

PC

VCC2

RF IN

From Bias
Stages

Seepin4schematic.

Seepin1schematic.

RF OUT

POWER AMPLIFIERS

13 RF OUT
14 GND
15 GND
16 GND

Rev B4 010507

From Bias
Stages

Same as pin 12. See pin 12 schematic.
Same as pin 2.
Same as pin 2.
Same as pin 2.

2-13

RF2104

Application Schematic - 915MHz

V

CC

10 µF

2

330 pF

100 pF

POWER AMPLIFIERS

PC

33 pF

7.5 pF

8.2 nH

100 pF

W=0.028"

L=0.400"

100 pF

1

2

3

4

5

6

7

8

BIAS

16

15

14

13

12

11

10

9

100 pF

100 pF

6.8 nH

3.3 nH

5.6 pF

7.5 pF
RF OUTRF IN

5.1 pF

Application Schematic - 830MHz

V

CC

10 µF

2-14

PC

330 pF

330 pF

100 pF

33 pF

10 nH

11 pF

100 pF

100 pF

100 pF

1

2

3

4

5

6

7

8

BIAS

16

15

100 pF

14

13

12

11

10

9

6.8 nH

3.3 nH

5.6 pF

7.5 pF
RF OUTRF IN

5.6 pF

Rev B4 010507

330 pF

330 pF

RF2104

Application Schematic - 420MHz

V

CC

10 µF

100 pF

2

PC

100 pF

33 pF

150 pF

33 nH

1.3 pF

100 pF

1.8 nH

100 pF

1

2

3

4

5

6

7

8

BIAS

16

15

100 pF

14

13

12

11

10

9

5.6 nH

6.8 nH

30 pF

68 pF

RF OUTRF IN

15 pF

POWER AMPLIFIERS

Rev B4 010507

2-15

2

RF2104

Evaluation Board Schema t ic - 915MHz

(Download Bill of Materials from www.rfmd.com.)

2104400A

P1-1

L1

8.2 nH

C2

100 pF

C1

330 pF

J1

RF IN

C4

10 µF

POWER AMPLIFIERS

P1-3

C7

7.5 pF

C3

100 pF

C9

33 pF

0.028" x 0.4"

100 pF

1

2

3

4

5

6

7

8

C8

NOTE:

Efficiency is affected by actual position of C9 and C10;
C9 is mounted close to DUT and C10 mounted away from DUT.

902 MHz to 928 MHz

BIAS

C6

100 pF

16

C5

C10

100 pF

L2

6.8 nH

L3

3.3 nH

C12

7.5 pF

C11

5.1 pF

50 Ω µstrip

P1

1

P1-1 VCC

2

GND

P1-3 PC

3

J2

RF OUT

15

14

13

12

11

10

13 pF

9

P1-1

J1

RF IN

C4

10 µF

P1-3

Evaluation Board Schema t ic - 830MHz

2104401A

C2

100 pF

C1

330 pF

50 Ωµstrip

10 nH

824 MHz to 849 MHz

C3

100 pF

C9

33 pF

C7

L1

15 pF

C8

100 pF

1

2

3

4

5

6

7

8

BIAS

16

15

14

13

12

11

10

9

C10

13 pF

1

100 pF

6.8 nH

3

6

C

0

0

p

F

C5

L2

L
3

.

C12

7.5 pF

3

C11

n

H

5.6 pF

50 Ω µstrip

P1

1

P1-1 VCC

2

GND

P1-3 PC

3

J2

RF OUT

2-16

Rev B4 010507

Evaluation Board Layout - 915MHz

3” x 2”

RF2104

2

POWER AMPLIFIERS

Rev B4 010507

2-17

2

RF2104

Evaluation Board Layout - 830MHz

3” x 2”

POWER AMPLIFIERS

2-18

Rev B4 010507