Datasheet RF2103P, RF2103PPCBA Datasheet (RF Micro Devices)

RF2103P

2

Typical Applications

• Digital Communication Systems

• Spread-Spectrum Communication Systems

• Driver for Higher Power Linear Applications

Product Description

The RF2103P is a medium power linear amplifier IC. The
deviceis manufacturedon an advanced Gallium Arsenide
Heterojunction Bipolar Transistor (HBT) process, and has
been designed for use as the final linear RF amplifier in
UHF radio transmitters operating between 450MHz and
1000 MHz. It may also be used as a driver amplifier in
higher power applications. The device is self-contained
with the exception of the output matching network, power
supply feed line, and bypass capacitors, and it produces
an output power level of 750mW (CW). The device can
be used in 3 cell battery applications. The maximum CW
output at 3.6V is 175 m W. The unit has a total gain of
31 dB, depending upon the output matching network.

MEDIUM POWER LINEAR AMPLIFIER

• Portable Battery-Powered Equipment

• Commercial and Consumer Systems

• Base Station Equipment

0

1

0

0

.

4

0

0

.

0

5

9

.

0

0

.

0

7

5

0

0.347

0.339

8° MAX

0° MIN

0.0500

0.0164

0.156

0.148

2

.

0

.

2

0

8

1

0

.

0

1

4

.

0.050

5

2

6

3

0.010

0.007

2

POWER AMPLIFIERS

Optimum Technology Matching® Applied

Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS

RF IN

GND

GND

VCC1

VCC2

PRE AMP PWR

PD

1

2

3

4

5

6

7

ü

SiGe HBT

PRE
AMP

CIRCUITS

BIAS

Si CMOS

FPA

14

13

12

11

10

9

8

RF OUT

RF OUT

GND

GND

GND

RF OUT

RF OUT

Functional Block Diagram

Package Style: SOIC-14

Features

• 450MHz to 1000 MHz Operation

• Up to 750mW CW Output Power

• 31dB Small Signal Gain

• Single 2.7V to 7.5V Supply

• 47% Efficiency

• Digitally Controlled Power Down Mode

Ordering Information

RF2103P Medium Power Linear Amplifier
RF2103P PCBA Fully Assembled Evaluation Board

RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro,NC 27409, USA

Tel [phone]

Fax [phone]

http://www.rfmd.com

Rev B1 010720

2-1

2

RF2103P

Absolute Maximum Ratings

Parameter Rating Unit

Supply Voltage -0.5 to +7.5 V
Power Down Voltage (VPD)-0.5to+5V
DC Supply Current 350 mA

Input RF Power +12 dBm
Output Load VSWR 10:1

Operating Case Temperature -40 to +100 °C
Operating Ambient Temperature -40 to +85 °C
Storage Temperature -40 to +150 °C

DC

RF Micro Devices believesthe furnishedinformation is correctand accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice.RF Micro Devices does not
assume responsibility for the use of the described product(s).

Caution! ESD sensitive device.

Parameter

POWER AMPLIFIERS

Min. Typ. Max.

Overall

Frequency Range 450 to 1000 MHz
Maximum Output Power +28.8 dBm V

Maximum Output Power +26.5 dBm V
Second Harmonic -24 dBc Without external second harmonic trap

Third Harmonic -30 dBc
Output Noise Power <-125 dBm/Hz
Input Impedance 50 Ω With external matching network; see appli-

Input VSWR <2:1 With external matching network; see appli­Output Impedance 18+j0 Ω Load Impedance for Optimal Match

Nominal 5.8V
Configuration

Linear Power Gain 31 dB
Saturated CW Output Power 24 +26.5 dBm
IM

3

IM

5

Collector Current, I

Current <3.5 mA Into pin 4

V

PD

CW Total Efficiency 47 %
Two Tone TotalEfficiency 26 % P

CC

Specification

-40 -25 dBc P

-45 -30 dBc P

175 250 mA Total of pins 7 and 8

Unit Condition

T=25°C, VCC=5.8V, VPD=5.0V,
Z

LOAD

CC
CC

cation schematic
cation schematic

VCC=5.8V, VPD=4.0V,Z
P

=0dBm, Freq=830MHz

IN

OUT
OUT

OUT

=18Ω,PIN=0dBm,Freq=915MHz

=7.5V
=5.8V

LOAD

=+18.5dBm/tone
=+18.5dBm/tone

=+18.5dBm/tone

Power Supply

Power Supply Voltage 2.7 to 7.5 V
Power Supply Idle Current 45 80 mA
Total "OFF" Current Drain 1 10 µ

Turn-on Time <100 ns VPD=0to VPD=+4V

A

V

PD

<0.1V

DC

DC

=18Ω,

2-2

Rev B1 010720

RF2103P

Pin Function Description Interface Schematic

1RFIN

2GND
3GND

4PD

5VCC1

6VCC2
7PREAMP

PWR

8RFOUT

9RFOUT
10 GND
11 GND
12 GND
13 RF OUT

RF input pin. There is an internal blocking capacitor between this pin
and the preamp input, but not between the pin and an internal 2kΩ
resistor to ground.

Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane.

Same as pin 2.
Powerdown controlvoltage. When thispin isat 0V,the device will b e in

power down mode, dissipating minimum DC power. When this pin is at

(3V to 6.5V), the device will be in full power mode delivering maxi-

V

CC

mum available gain and output power capability. This pin may also be
used to perfor m some degree of gain control orpower c ontrol when set
to voltages between 0V and V

the transfer function is not linear over a wide range as with other
devices specifically designed for analog gain control; however, it may
be usable for coarse adjustment or in some closed loop AGC systems.
This pin should not, in any circumstance, be higherin voltage than V

This pin should also have an external bypassing capacitor.
Positive supply for the active bias circuits. This pin can be externally

combined with pi n 6(VCC2) and the pair bypassed witha single capac­itor, placed as close as possible to the package. Additional bypassing

of 1µF is also recommended, but proximity to the package is notas crit­ical. In most applications, pins 5, 6, and 7 can share a single 1µF

bypass capacitor.
Same as pin 5.

Positive supply for the pre-amplifier. This is an unmatched transistor
collector output. This pin should see an inductive path to ACground

with bypass capacitor). This indu ctance can be achieved with a

(V

CC

short, thin microstrip line or with a low value chip inductor (approxi­mately 1.8nH). At lower frequencies, the inductance value should be
larger (longer microstrip line) and V

larger bypass capacitor.This inductance forms a matching network
with the internal series capacitor between the two amplifier stages, set­ting the amplifier’s frequency of maximum gain. An additional 1µF
bypass capacitor in parallel with the 100pF bypass capacitor is also
recommended, but placement of this component is not as critical. In
most applications, pins 5, 6, and 7 can share a single 1µF bypass
capacitor.

Same as pin 14.
Same as pin 14.
Same as pin 2.
Same as pin 2.
Same as pin 2.
Same as pin 14.

. It is not optimized for this function so

CC

should be bypassed with a

CC

CC

.

2

POWER AMPLIFIERS

Rev B1 010720

2-3

2

RF2103P

Pin Function Description Interface Schematic

14 RF OUT

POWER AMPLIFIERS

Amplifier RF output. This is an unmatched collector output of the final
amplifier tra nsistor.It is internally connected to pins 8, 9, 13 and 14 to
provide low series inductanceand flexibility in output matching. Biasfor
the final power amplifier output transistor must also be provided
through two of these four pins. Typically, pins 8 and 9 are connected to
a network that provides the DC bias and also creates a second har­monic trap. For915MHz operation, this harmonictrap networ k is simply
a single 2pF capacitor from both pins to ground. This capacito r series
resonates with internal bond wires at two times the operating fre­quency,effectively shorting out the second harmonic. Shorting out this
harmonic servesto increase the amplifier’s maximumoutput power and
efficiency, as well as to lower the level of the second harmonic output.
Typically, pins 13 and 14 are externally connec ted very close to the
package and used as the RF output with a matching network that pre­sents the optimum load impedance to the PA for maximum power and
efficiency, as well as providing DC blocking at the output. Shunt protec­tion diodes are included to clip peak voltage excursions above approxi­mately 15V to prevent voltage breakdown in worst case conditions.

Application Schematic

For lower frequency
operation: Cut trace
on board and insert
inductor L4

100 pF

FREQUENCY (MHz) L1 (nH) L3 (nH)L2 (nH) L4 (nH) C1 (pF) C2 (pF)

RF IN

6.8 nH

12 nH

V

CC

1

µ

F

(PCB material: FR-4,

Thickness:0.031")

275
480
915

V

B

.01" x .2"

22

Ω

1

PRE AMP

2

3

100 pF

4

5

100

pF

6

7

20 15 10 20 20 10
12 6.8 4.7 18 12 6.8

6.8 3.3 4 2

CIRCUITS

FPA

BIAS

14

13

12

11

10

RF OUT

C1

L1

For lower frequency
operation: Cut trace
on board and insert
inductor L3

V

9

8

C2

CC

L2

330 pF

2-4

Rev B1 010720

Evaluation Board Schemati c

915MHz Operation

(Download Bill of Materials from www.rfmd.com.)

RF2103P

RF IN

P1-3

P1-1

P1-1

SMA

J1

50

Ω µ

strip

C2
100 pFC3100 pF

C9
100 pF

L4

6.8 nH

C1

100 pF

C10
100 pF

(PCB mat'l: FR-4,

Thickness: 0.031")

R1

Ω

22

L3

12 nH

0.01" x 0.2"

P1-1

1

2

3

4

5

6

7

C6

1nF

C8

1nF

P1-3

2103400 Rev C

PRE
AMP

BIAS

CIRCUITS

P1

1
2
3

FPA

VCC
GND

VB

2

POWER AMPLIFIERS

50Ω Matching Network

14

50

Ω µ

13

C4

12

11

10

9

8

4pF

L2

3.3 nH
C7

2pF

strip

L1

6.8 nH

C5

330 pF

RF OUT

J2

P1-1

Rev B1 010720

2-5

2

RF2103P

Evaluation Board Layout

1.4” x 1.4”

POWER AMPLIFIERS

2-6

Rev B1 010720

RF2103P

Gain and Pout vs. Pin

35

30

25

20

15

Gain (dB), Pout (dBm)

10

5

0

-25 -20 -15 -10 -5 0 5

Vcc=Vb=3.6 V, 915 MHz

Pout (+25°C) Gain(+25°C)
Pout (-40°C) Gain(-40°C)
Pout (+85°C) Gain(+85°C)

Pin (dBm)

Gain and Pout vs. Pin

35

30

25

Vcc=Vb=4.8 V, 915 MHz

Efficiency and Icc vs. Pout

75

Eff (+25°C) Eff (-40°C) Eff (+85°C)
Icc (+25°C) Icc (-40°C) Icc(+85°C)

60

45

30

Efficiency (%)

15

0

0 5 10 15 20 25 30

Vcc=Vb=3.6 V, 915 MHz

Pout (dBm)

Efficiency and Icc vs. Pout

75

Eff (+25°C) Eff (-40°C) Eff (+85°C)
Icc (+25°C) Icc (-40°C) Icc(+85°C)

60

Vcc=Vb=3.6 V, 915 MHz

260

210

160

110

60

10

260

210

2

Icc (mA)

POWER AMPLIFIERS

20

15

Gain (dB), Pout (dBm)

10

5

0

-25 -20 -15 -10 -5 0 5

Pout (+25°C) Gain(+25°C)
Pout (-40°C) Gain(-40°C)
Pout (+85°C) Gain(+85°C)

Pin (dBm)

Gain and Pout vs. Pin

35

30

25

20

15

Gain (dB), Pout (dBm)

10

5

0

-25 -20 -15 -10 -5 0 5

Vcc=6.0 V, Vb=5.0 V, 915 MHz

Pout (+25°C) Gain(+25°C)
Pout (-40°C) Gain(-40°C)
Pout (+85°C) Gain(+85°C)

Pin (dBm)

45

30

Efficiency (%)

15

0

0 5 10 15 20 25 30

Pout (dBm)

Efficiency and Icc vs. Pout

75

60

45

30

Efficiency (%)

15

0

0 5 10 15 20 25 30

Vcc=6.0 V, Vb=5.0 V, 915 MHz

Eff (+25°C) Eff (-40°C) Eff (+85°C)
Icc (+25°C) Icc (-40°C) Icc(+85°C)

Pout (dBm)

160

110

60

10

260

210

160

110

60

10

Icc (mA)

Icc (mA)

Rev B1 010720

2-7

RF2103P

2

IM3, IM5, and IM2 vs. Pout

0

-10

-20

-30

-40

Vcc=Vb=3.6 V, 915 MHz

IM3
IM5
IM2

Harmonic Level (dBc)

0

-10

-20

-30

-40

2Fo 3Fo 4Fo
5Fo 6Fo 7Fo

Harmonics vs. Pout

Vcc=Vb=3.6 V, 915 MHz

Intermodulation Products (dBc)

-50

POWER AMPLIFIERS

-60

-15 -10 -5 0 5 10 15 20 25

Pout per Tone (dBm)

IM3, IM5, and IM2 vs. Pout

0

-10

-20

Vcc=Vb=4.8 V, 915 MHz

IM3
IM5
IM2

-50

-60
5 1015202530

Fundamental Pout (dBm)

Harmonics vs. Pout

0

-10

-20

Vcc=Vb=4.8 V, 915 MHz

2Fo 3Fo 4Fo
5Fo 6Fo 7Fo

-30

-40

Intermodulation Products (dBc)

-50

-60

-15 -10 -5 0 5 10 15 20 25

Pout per Tone (dBm)

IM3, IM5, and IM2 vs. Pout

0

-10

-20

-30

-40

Intermodulation Products (dBc)

-50

Vcc=6.0 V, Vb=5.0 V, 915 MHz

IM3
IM5
IM2

-30

-40

Harmonic Level (dBc)

-50

-60
5 1015202530

Fundamental Pout (dBm)

Harmonics vs. Pout

Vcc=6.0 V,Vb=5.0 V, 915 MHz

2Fo 3Fo 4Fo
5Fo 6Fo 7Fo

Harmonic Level (dBc)

0

-10

-20

-30

-40

-50

-60

-15 -10 -5 0 5 10 15 20 25

Pout per Tone (dBm)

2-8

-60
5 1015202530

Fundamental Pout (dBm)

Rev B1 010720

RF2103P

30

20

10

0

Pout (dBm)

-10

-20

-30

0.01.02.03.04.05.0

Vcc=3.6 V, Pin=0 dBm, 915 MHz

+25°C

-40°C
+85°C

Vb (Volts)

Pout vs. Vb

Pout vs. Vb

30

20

10

0

Pout (dBm)

-10

Vcc=4.8 V, Pin=0 dBm, 915 MHz

+25°C

-40°C
+85°C

Efficiency vs. Vb

75

60

45

30

Efficiency (%)

15

0

0.01.02.03.04.05.0

Vcc=3.6 V, Pin=0 dBm, 915 MHz

+25°C

-40°C
+85°C

Vb (Volts)

Efficiency vs. Vb

75

60

45

30

Efficiency (%)

Vcc=4.8 V, Pin=0 dBm, 915 MHz

+25°C

-40°C
+85°C

2

POWER AMPLIFIERS

-20

-30

0.01.02.03.04.05.0

Vb (Volts)

Pout vs. Vb

30

20

10

0

Pout (dBm)

-10

-20

-30

0.01.02.03.04.05.0

Vcc=6.0 V, Pin=0 dBm, 915 MHz

+25°C

-40°C
+85°C

Vb (Volts)

Rev B1 010720

15

0

0.01.02.03.04.05.0

Vb (Volts)

Efficiency vs. Vb

75

60

45

30

Efficiency (%)

15

0

0.01.02.03.04.05.0

Vcc=6.0 V, Pin=0 dBm, 915 MHz

+25°C

-40°C
+85°C

Vb (Volts)

2-9

RF2103P

2

Psat vs. Vcc

30

25

20

15

Psat (dBm)

10

5

POWER AMPLIFIERS

0

2.0 3.0 4.0 5.0 6.0 7.0 8.0

Vb=Vcc; Vb

5.0 V, 915 MHz

≤≤≤≤

Vcc (Volts)

35

30

25

20

15

Pout, per Tone (dBm)

10

5

0

-25 -20 -15 -10 -5 0 5

Vb Required to Achieve Specific Pout

5

27dBm
24dBm

4

3

21dBm
18dBm
15dBm

(Vb<5.0 V, 915 MHz)

100

80

60

Two Tone Pout vs. Pin,

915 MHz

Vcc=Vb=3.6V
Vcc=Vb=4.8V
Vcc=6.0V, Vb=5.0V

Pin, per Tone (dBm)

Two Tone Efficiency and Icc vs. Pout,

915 MHz

Eff (Vcc=Vb=3.6V)
Eff (Vcc=Vb=4.8V)
Eff (Vcc=6.0V, Vb=5.0V)
Icc (Vcc=Vb=3.6V)
Icc (Vcc=Vb=4.8V)
Icc (Vcc=6.0V, Vb=5.0V)

260

210

160

Vb (Volts)

2

1

0

2.0 3.0 4.0 5.0 6.0 7.0 8.0

Vcc (Volts)

40

Two Tone Efficiency (%)

20

0

0 5 10 15 20 25 30

Pout, per Tone (dBm)

110

Two Tone Icc (mA)

60

10

2-10

Rev B1 010720