Datasheet RB201, RB2010, RB202, RB200, RB204 Datasheet (WTE)

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Page 1
WTE
POWER SEM ICOND UCTOR S
RB200 – RB2010
2.0A BRIDGE RECTIFIER
Features
!
Diffused Junction
!
Low Forward Voltage Drop A
!
High Current Capability
!
!
High Surge Current Capability B
!
Ideal for Printed Circuit Boards
!
UL Recognized File # E157705
C D
Mechanical Data
!
Case: Molded Plastic E
!
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208 ~
!
Polarity: As Marked on Body
!
Weight: 1.3 grams (approx.) -
!
Mounting Position: Any +
!
Marking: Type Number G
G
+ ~ ~ -
~
RB-20
Dim Min Max
A B C D E G
All Dimensions in mm
9.10 9.40
6.90 7.40
27.9
25.4
0.71 0.81
4.60 5.60
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic Symbol RB200 RB201 RB202 RB204 RB206 RB208 RB2010 Unit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
RMS Reverse Voltage V Average Rectified Output Current
(Note 1) @T Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load (JEDEC Method)
Forward Voltage (per element) @IF = 2.0A V Peak Reverse Current @TA = 25°C
At Rated DC Blocking Voltage @T Operating Temperature Range T Storage Temperature Range T
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.
= 50°C
A
= 100°C
A
RRM
V
RWM
V
R
V
R(RMS)
O
I
FSM
I
FM
RM
I
STG
50 100 200 400 600 800 1000 V
35 70 140 280 420 560 700 V
j
@TA=25°C unless otherwise specified
2.0 A
50 A
1.0 V 10
500
-55 to +125 °C
-55 to +150 °C
µA
RB200 – RB2010 1 of 3 © 2002 Won-Top Electronics
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2.0
1.5
1.0
Single phase half-sine-wave
60Hz resistive or inductive load
10
1.0
F
I , AVERAGE FORWARD CURRENT (A)
0.5
0
0 25 50 100 125 15075
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
60
50
40
30
20
10
FSM
I , PEAK FORWARD SURGE CURRENT (A)
0
1
Fig. 3 Max Non-Repetitive Surge Current
A
Pulse Width 8.3 ms Single Half-Sine-Wave (JEDEC Method)
10
NUMBER OF CYCLES AT 60 Hz
100
0.1
F
I , INSTANTANEOUS FORWARD CURRENT (A)
0.01
Pulse width = 300µs
0.2 0.6 1.0 1.4 V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Fig.2TypicalForwardCharacteristics, per element
100
10
j
C , JUNCTION CAPACITANCE (pF)
1
1 10 100
V , REVERSE VOLTAGE (V)
R
Fig. 4 Typical Junction Capacitance
T = 25°C
j
T = 25°C
j
f = 1mz
200
100
T = 100°C
j
10
1.0
T = 25°C
j
0.1
R
0.01
I , INSTANTANEOUS REVERSE CURRENT (µA)
0 40 80 160
120
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
RB200 – RB2010 2 of 3 © 2002 Won-Top Electronics
Page 3
ORDERING INFORMA TION
Product No. Package Type Shipping Quantity
RB200 Round Bridge 1000 Units/Box RB201 Round Bridge 1000 Units/Box RB202 Round Bridge 1000 Units/Box RB204 Round Bridge 1000 Units/Box RB206 Round Bridge 1000 Units/Box RB208 Round Bridge 1000 Units/Box RB2010 Round Bridge 1000 Units/Box
Shipping quantity given is for minimum packing quantity only. For minimum order quantity, please consult the Sales Department.
Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, WTE cannot assume any responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to manufacturer. WTE reserves the right to change any or all information herein without further notice.
WARNING
support devices or systems without the express written approval.
Won-Top Electronics Co., Ltd.
No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan
Phone: Fax: Email: Internet:
RB200 – RB2010 3 of 3 © 2002 Won-Top Electronics
: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in life
886-7-822-5408 or 886-7-822-5410
886-7-822-5417
sales@wontop.com
http://www.wontop.com
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