Datasheet RB0540S2 Datasheet (CYStech) [ru]

CYStech Electronics Corp.

0.5A surface mount Schottky diode

RB0540S2

Features

• High current capability, low forward voltage drop

• High surge current capability

• Guardring for over voltage protection

• Low power loss, high efficiency

• Ultra high-speed switching

• Low profile surface mounted package in order to minimize board space

Mechanical data

•Case : Molded plastic, SC-76/SOD323

•Epoxy : UL94-V0 rated flame retardant

•Terminals : Plated terminals, solderable per MIL-STD-750 method 2026

•Polarity : Indicated by cathode band

•Mounting position : Any

•Weight : approx. 0.0045 gram

Spec. No. : C291S2
Issued Date : 2008.12.15
Revised Date : 2013.11.28
Page No. : 1/6

Symbol Outline

RB0540S2

Ordering Information

Device Package Shipping

RB0540S2-0-T1-G

(Pb-free lead plating and halogen-free package)

SOD-323

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products

Packing spec, T1 : 3000 pcs / tape & reel, 7” reel

Product rank, zero for no rank products

Product name

SOD-323

2 (Anode)

3000 pcs / tape & reel

RB0540S2 CYStek Product Specification

CYStech Electronics Corp.

Absolute Maximum Ratings (TA=25℃, unless otherwise noted)

Spec. No. : C291S2
Issued Date : 2008.12.15
Revised Date : 2013.11.28
Page No. : 2/6

Parameters Conditions

Repetitive peak reverse voltage

RMS voltage

Symbol Min Typ Max Units

V

V

Continuous reverse voltage

I

Forward rectified current

Forward surge current

Thermal resistance Junction to Ambient

Storage temperature range

Operating junction temperature range

Single phase half wave, 60Hz
@T

=25°C

J

8.3ms single half sine-wave
superimposed on rated load
(JEDEC method)

Tstg

Tj

I

Characteristics

Characteristic Symbol Condition Min. Typ Max. Unit

(TA=25°C)

RRM

RMS

VR 40 V

O

F(AV)

I

FSM

R

JA

θ

40 V

28 V

0.5

1

15 A

90

-65 175

-55 125

A

°C/W

°C

°C

Forward Voltage

VR IR=600μA

VF 1 IF=100mA -

VF 2 IF=500mA -

IR 1 VR=20V -

Reverse Leakage Current

IR 2 VR=40V -

R 3

I

VR=40V, TA=75°C

Capacitance Between Terminals CT VR=4V, f=1MHz -

40

-

-

-

-

-

-

-

18.3

- V

370

mV

500

100 μA

500 μA

10 mA

- pF

RB0540S2 CYStek Product Specification

CYStech Electronics Corp.

Characteristic Curves

Spec. No. : C291S2
Issued Date : 2008.12.15
Revised Date : 2013.11.28
Page No. : 3/6

Forward Current Derating Curve

0.6

0.5

0.4

0.3

0.2

resistive or inductive load

0.1

Average Forward Current---Io(A)

0

0 25 50 75 100 125 150 175

Ambient Temperature---T

A

Forward Current vs Forward Voltage

1000

(mA)

F

100

Tj=125℃

Tj=75℃

(℃)

Maximum Non-Repetitive Forward Surge Current

15

(A)

12

FSM

9

6

3

Peak Forward Surge Current---I

0

1 10 100

Tj=25℃, 8. 3ms Single Half Sine
Wave, JEDEC method

Number of Cycles at 60Hz

Junction Capacitance vs Reverse Voltage

100

(pF)

J

10

Instantane ous Forward Current---I

1

0 0.2 0.4 0.6

Forward Volt age ---V

Tj=25℃

Pulse width=300μs,
1% Duty cycle

(V)

F

Reverse Leakage Current vs Reverse Voltage

10000

(μA)

R

1000

Tj=75℃

100

Reverse Leakage Current---I

10

0 20 40 60 80 100 120 140

Percent of Rated Peak

Tj=25℃

Reverse Voltage---(%)

Tj=25℃, f=1. 0MHz

Junction Capacitance---C

10

0.1 1 10

Reverse Voltage---V

(V)

R

RB0540S2 CYStek Product Specification

Reel Dimension

CYStech Electronics Corp.

Spec. No. : C291S2
Issued Date : 2008.12.15
Revised Date : 2013.11.28
Page No. : 4/6

Carrier Tape Dimension

RB0540S2 CYStek Product Specification

CYStech Electronics Corp.

Recommended wave soldering condition

Product Peak Temperature Soldering Time

Spec. No. : C291S2
Issued Date : 2008.12.15
Revised Date : 2013.11.28
Page No. : 5/6

Pb-free devices

260 +0/-5 °C

Recommended temperature profile for IR reflow

5 +1/-1 seconds

Profile feature Sn-Pb eutectic Assembly

Average ramp-up rate

(Tsmax to Tp)

Preheat

−Temperature Min(TS min)

−Temperature Max(TS max)

−Time(ts min to ts max)

Time maintained above:

−Temperature (TL)

− Time (tL)

Peak Temperature(TP)

Time within 5°C of actual peak

temperature(tp)

Ramp down rate

Time 25 °C to peak temperature

Note : All temperatures refer to topside of the package, measured on the package body surface.

3°C/second max. 3°C/second max.

100°C
150°C

60-120 seconds

183°C

60-150 seconds

240 +0/-5 °C 260 +0/-5 °C

10-30 seconds 20-40 seconds

6°C/second max. 6°C/second max.

6 minutes max. 8 minutes max.

Pb-free Assembly

150°C
200°C

60-180 seconds

217°C

60-150 seconds

RB0540S2 CYStek Product Specification

SOD-323 Dimension

K
A

CYStech Electronics Corp.

Spec. No. : C291S2
Issued Date : 2008.12.15
Revised Date : 2013.11.28
Page No. : 6/6

Marking:

5 H

C

2

B

J

Millimeters Inches Millimeters

DIM

C

E

Min. Max. Min. Max.

Style: Pin 1.Cathode 2.Anode

2-Lead SOD-323 Plastic Surface

Mounted Package,

CYStek Package Code: S2

*: Typical

D

DIM

1

H

Inches

Min. Max. Min. Max.
A 0.0630 0.0709 1.60 1.80 E 0.0060 REF 0.15 REF
B 0.0453 0.0531 1.15 1.35 H 0.0000 0.0040 0.00 0.10
C 0.0315 0.0394 0.80 1.00 J 0.0035 0.0070 0.089 0.177
D 0.0098 0.0157 0.25 0.40 K 0.0906 0.1063 2.30 2.70

Notes: 1.Controlling dimension : millimeters.

Material:

• Lead: Pure tin plated.

• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.

2.Lead thickness specified per L/F drawing with solder plating.

3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.

Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.

• CYStek reserves the right to make changes to its products without notice.

• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

RB0540S2 CYStek Product Specification