Datasheet PZTM1102 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

M3D087

DATA SH EET

PZTM1102

PNP transistor/Schottky-diode
module

Product specification
File under Discrete Semiconductors, SC01

1996 May 09

Philips Semiconductors Product specification

Fig.1 Simplified outline (SOT223) and symbol.

Marking code: TM1102.

handbook, halfpage

4

1

1

4

2

3

2 3

MAM237

Top view

PNP transistor/Schottky-diode module PZTM1102

FEATURES

• Low output capacitance

• Fast switching time

DESCRIPTION

Combination of a PNP transistor and a Schottky barrier diode in a plastic
SOT223 package. NPN complement: PZTM1101.

• Integrated Schottky protection
diode.

APPLICATIONS

• High-speed switching for industrial
applications.

PINNING

PIN DESCRIPTION

1 cathode Schottky
2 base
3 emitter
4 collector, anode Schottky

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

PNP transistor

V
V
V
I

CBO
CES
EBO

C

collector-base voltage open emitter − −40 V
collector-emitter voltage VBE= 0 − −40 V
emitter-base voltage open collector − −6 V
collector current (DC) − −200 mA

Schottky barrier diode

V

R

I

F

I

F(AV)

P power dissipation up to T
T

j

continuous reverse voltage − 40 V
forward current (DC) − 1 A
average forward current − 1 A

= 25 °C; note 1 − 0.5 W

amb

junction temperature reverse current applied − 125 °C

forward current applied − 150 °C

Combined device

P

tot

T

amb

T

stg

T

j

Notes

1. An additional copper area of >20 mm

2. It is not allowed to dissipate the total power of 1.2 W in the Schottky die only.

total power dissipation up to T
operating ambient temperature −55 +150 °C
storage temperature −55 +150 °C
junction temperature − 150 °C

2

is required for pin 1, if power dissipation in the Schottky die is >0.5 W.

= 25 °C; note 2 − 1.2 W

amb

1996 May 09 2

Philips Semiconductors Product specification

PNP transistor/Schottky-diode module PZTM1102

ELECTRICAL CHARACTERISTICS

T

= 25 °C unless otherwise specified.

amb

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

NPN transistor

V

(BR)CBO

collector-base breakdown
voltage

V

(BR)CES

collector-emitter
breakdown voltage

V

(BR)EBO

emitter-base breakdown
voltage

I

CES

collector-emitter cut-off
current

I

EBO

V

CEsat

emitter-base cut-off current VEB= −6 V; IC= 0 − 50 nA

collector-emitter saturation
voltage

V

CEsat

collector-emitter saturation
voltage

V

BEsat

base-emitter saturation
voltage

V

BEsat

base-emitter saturation
voltage

C

ob

C

ib

f

T

h

FE

h

FE

output capacitance IE= ie= 0; VCB= −5 V; f = 1 MHz − 4.5 pF
input capacitance IC= ic= 0; VEB= −0.5 V; f = 1 MHz − 10 pF
transition frequency IC= −10 mA; VCE= −20 V; f = 100 MHz 250 − MHz
DC current gain VCE= −1 V; note 1

DC current gain VCE= −1 V; T

SWITCHING TIMES (see Figs 2 and 3)
t

d

t

r

t

s

t

f

delay time VCC= 5 V 3 7 ns
rise time IC= 50 mA 13 23 ns
storage time Vi= 0 to 5 V 200 380 ns
fall time 50 80 ns

open emitter; IC= −10 µA; IE= 0;
T

= −55 to +150 °C; note 1

amb

open base; IC= −1 mA; VBE= 0;
T

= −55 to +150 °C; note 1

amb

open collector; IE= −10 µA; IC= 0;
T

= −55 to +150 °C; note 1

amb

−40 − V

−40 − V

−6 − V

VCE= −20 V; VBE= 0 − 100 nA
VCE= −20 V; VBE= 0; T

VEB= −6 V; IC= 0; T

amb

= −55 to +150 °C − 50 µA

amb

= −55 to +150 °C − 10 µA

note 1

IC= −10 mA; IB= −1 mA − −200 mV
IC= −50 mA; IB= −3.2 mA − −300 mV

T

= −55 to +150 °C; note 1

amb

IC= −10 mA; IB= −1 mA − −250 mV
IC= −50 mA; IB= −3.2 mA − −350 mV

note 1

IC= −10 mA; IB= −1 mA − −850 mV
IC= −50 mA; IB= −5 mA − −950 mV

T

= −55 to +150 °C; note 1

amb

IC= −10 mA; IB= −1 mA − −1.0 V
IC= −50 mA; IB= −5 mA − −1.1 V

IC= −0.1 mA 40 −
IC= −1 mA 70 −
IC= −10 mA 100 300
IC= −100 mA 30 −

= −55 to +150 °C; note 1

amb

IC= −10 mA 60 500
IC= −100 mA 15 −

1996 May 09 3

Philips Semiconductors Product specification

PNP transistor/Schottky-diode module PZTM1102

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Schottky barrier diode

V

F

I

R

I

R

C

j

Notes

1. Measured under pulsed conditions: tp≤ 300 µs; δ ≤ 0.01.

2. Limiting value for Tj= 125 °C; Tj= 150 °C with reverse current applied is not allowed as this may cause thermal

runaway leading to thermal destruction of the diode. A peak junction temperature of Tj= 150 °C is only allowed with
forward voltage applied.

forward voltage IF= 100 mA; note 1 − 330 mV

IF= 100 mA; T

= −55 to +150 °C; note 1 − 400 mV

amb

IF= 1 A; note 1 − 500 mV
IF= 1 A; T

= −55 to +150 °C; note 1 − 560 mV

amb

reverse current VR= 40 V; note 1 − 300 µA

VR= 40 V; Tj= 125 °C;
T

= −55 to +150 °C; note 1

amb

− 35

(2)

mA

reverse current VR= 10 V; note 1 − 40 µA

VR= 10 V; Tj= 125 °C;
T

= −55 to +150 °C; note 1

amb

− 15

(2)

mA

junction capacitance VR= 0 V; f = 1 MHz − 250 pF

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R
R

th j-a
th j-a

thermal resistance from junction to ambient (for the transistor) note 1 100 K/W
thermal resistance from junction to ambient (for the Schottky diode) note 1 250 K/W

Note

1. Refer to SOT223 standard mounting conditions.

1996 May 09 4

Philips Semiconductors Product specification

Fig.2 Switching times test circuit.

MBH222

handbook, halfpage

DUT

Vo (pin 4)

V

i

5 V
0 V

V

CC

= 5 V DC

90 Ω
(1%)

5.23 Ω
(1%)

7.5 kΩ
(5%)

825 Ω

(1%)

Fig.3 Input and output waveforms.

tr< 5ns (10% to90%); tp= 1 µs; δ= 0.02; Zi= 50 Ω.
ton= td+ tr; t

off

= ts+ tf.

handbook, halfpage

MBH223

INPUT

OUTPUT

V

i

V

o

5 V

0 V

t

on

t

r

t

s
t

off

t

p

t

d

t

f

90%

90%

10%

10%

PNP transistor/Schottky-diode module PZTM1102

GRAPHICAL DATA

1996 May 09 5

Philips Semiconductors Product specification

Dimensions in mm.

Fig.4 SOT223.

handbook, full pagewidth

6.7

6.3

0.95

0.85

2.3

0.80

0.60

4.6

3.1

2.9

3.7

3.3

7.3

6.7

A

B

0.2 A

1.80
max

16

16

o

max

10

o

max

0.10

0.01

0.32

0.24

4

1 2 3

MSA035 - 1

(4x)

0.1 B

M

M

S seating plane

0.1 S

o

PNP transistor/Schottky-diode module PZTM1102

PACKAGE OUTLINE

1996 May 09 6

Philips Semiconductors Product specification

PNP transistor/Schottky-diode module PZTM1102

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1996 May 09 7