R2A AND R2B ARE ELECTRONICALLY ADJUS TED ON CHIP AT FACTORY FOR MINI M UM INPUT OF FSET VO LTAGE.
6
V+
7
8
3
C3
1
4
2
OUT
Q5
R2A
1
R5
R8
R7
V–
R6
R3
R4
Q21
Q22
Q23
Q24
R1A
R2B
1
R1B
Q7
Q3 Q6
Q1
Q4
Q2
Q27
Q26
Q25
C1
Q9
Q10
Q11
Q12
C2
(OPTIONAL
NULL)
Q13
Q14
Q17
Q16
Q15
Q18
Q20
Q19
R10
R9
Q8
NONINVERTING
INPUT
INVERTING
INPUT
00316-002
Data Sheet
FEATURES
Low VOS: 75 μV maximum
Low V
Ultrastable vs. time: 1.5 μV per month maximum
Low noise: 0.6 μV p-p maximum
Wide input voltage range: ±14 V typical
Wide supply voltage range: ±3 V to ±18 V
125°C temperature-tested dice
APPLICATIONS
Wireless base station control circuits
Optical network control circuits
Instrumentation
Sensors and controls
Precision filters
GENERAL DESCRIPTION
The OP07 has very low input offset voltage (75 μV maximum for
OP07E) that is obtained by trimming at the wafer stage. These
low offset voltages generally eliminate any need for external
nulling. The OP07 also features low input bias current (±4 nA for
the OP07E) and high open-loop gain (200 V/mV for the OP07E).
The low offset and high open-loop gain make the OP07
particularly useful for high gain instrumentation applications.
drift: 1.3 μV/°C maximum
OS
Thermocouples
Resistor thermal detectors (RTDs)
Strain bridges
Shunt current measurements
Ultralow Offset Voltage
PIN CONFIGURATION
Figure 1.
The wide input voltage range of ±13 V minimum combined
with a high CMRR of 106 dB (OP07E) and high input
impedance provide high accuracy in the noninverting circuit
configuration. Excellent linearity and gain accuracy can be
maintained even at high closed-loop gains. Stability of offsets
and gain with time or variations in temperature is excellent. The
accuracy and stability of the OP07, even at high gain, combined
with the freedom from external nulling have made the OP07 an
industry standard for instrumentation applications.
The OP07 is available in two standard performance grades. The
OP07E is specified for operation over the 0°C to 70°C range,
and the OP07C is specified over the −40°C to +85°C
temperature range.
The OP07 is available in epoxy 8-lead PDIP and 8-lead narrow
SOIC packages. For CERDIP and TO-99 packages and standard
microcircuit drawing (SMD) versions, see the OP77.
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Figure 2. Simplified Schematic
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 www.analog.com
Page 2
OP07 Data Sheet
TABLE OF CONTENTS
Features .............................................................................................. 1
Absolute Maximum Ratings ............................................................6
Deleted OP07D Column from Electrical Characteristics ....... 4–5
Edits to TPCs ................................................................................ 7–9
Edits to High-Speed, Low V
Composite Amplifier ................... 9
OS
Rev. G | Page 2 of 16
Page 3
Data Sheet OP07
Input Offset Voltage1
VOS
30
75
μV
fO = 1 kHz
0.12
0.17
pA/√Hz
Large Signal Voltage Gain
AVO
RL ≥ 2 kΩ, VO = ±10 V
200
500 V/mV
Input Voltage Range
IVR ±13
±13.5
V
SPECIFICATIONS
OP07E ELECTRICAL CHARACTERISTICS
VS = ±15 V, unless otherwise noted.
Table 1.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
TA = 25°C
Long-Term VOS Stability2 VOS/Time 0.3 1.5 μV/Month
Input Offset Current IOS 0.5 3.8 nA
Input Bias Current IB ±1.2 ±4.0 nA
Input Noise Voltage en p-p 0.1 Hz to 10 Hz3 0.35 0.6 μV p-p
Input Noise Voltage Density en fO = 10 Hz 10.3 18.0 nV/√Hz
fO = 100 Hz3 10.0 13.0 nV/√Hz
fO = 1 kHz 9.6 11.0 nV/√Hz
Input Noise Current In p-p 14 30 pA p-p
Input Noise Current Density In fO = 10 Hz 0.32 0.80 pA/√Hz
fO = 100 Hz3 0.14 0.23 pA/√Hz
Input Resistance, Differential Mode4 RIN 15 50 MΩ
Input Resistance, Common Mode R
Input Voltage Range IVR ±13 ±14 V
Common-Mode Rejection Ratio CMRR VCM = ±13 V 106 123 dB
Power Supply Rejection Ratio PSRR VS = ±3 V to ±18 V 5 20 μV/V
160 GΩ
INCM
RL ≥ 500 Ω, VO = ±0.5 V, VS = ±3 V4 150 400 V/mV
0°C ≤ TA ≤ 70°C
Input Offset Voltage1 VOS 45 130 μV
Voltage Drift Without External Trim4 TCVOS 0.3 1.3 μV/°C
Voltage Drift with External Trim3 TCV
Input Offset Current IOS 0.9 5.3 nA
Input Offset Current Drift TCIOS 8 35 pA/°C
Input Bias Current IB ±1.5 ±5.5 nA
Input Bias Current Drift TCIB 13 35 pA/°C
Common-Mode Rejection Ratio CMRR VCM = ±13 V 103 123 dB
Power Supply Rejection Ratio PSRR VS = ±3 V to ±18 V 7 32 μV/V
Large Signal Voltage Gain AVO RL ≥ 2 kΩ, VO = ±10 V 180 450 V/mV
OUTPUT CHARACTERISTICS
TA = 25°C
Output Voltage Swing VO RL ≥ 10 kΩ ±12.5 ±13.0 V
RL ≥ 2 kΩ ±12.0 ±12.8 V
RL ≥ 1 kΩ ±10.5 ±12.0 V
0°C ≤ TA ≤ 70°C
Output Voltage Swing VO RL ≥ 2 kΩ ±12 ±12.6 V
RP = 20 kΩ 0.3 1.3 μV/°C
OSN
Rev. G | Page 3 of 16
Page 4
OP07 Data Sheet
Long-Term VOS Stability2
VOS/Time
0.4
2.0
μV/Month
Input Resistance, Differential Mode4
RIN 8
33 MΩ
Voltage Drift with External Trim3
TCV
RP = 20 kΩ
0.4
1.6
μV/°C
Common-Mode Rejection Ratio
CMRR
VCM = ±13 V
97
120 dB
Parameter Symbol Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
TA = 25°C
Slew Rate SR RL ≥ 2 kΩ3 0.1 0.3 V/μs
Closed-Loop Bandwidth BW A
Open-Loop Output Resistance RO VO = 0, IO = 0 60 Ω
Power Consumption Pd VS = ±15 V, No load 75 120 mW
VS = ±3 V, No load 4 6 mW
Offset Adjustment Range RP = 20 kΩ ±4 mV
1
Input offset voltage measurements are performed by automated test equipment approximately 0.5 seconds after application of power.
2
Long-term input offset voltage stability refers to the averaged trend time of VOS vs. the time over extended periods after the first 30 days of operation. Excluding the
initial hour of operation, changes in VOS during the first 30 operating days are typically 2.5 μV. Refer to the Typical Performance Characteristics section. Parameter is
sample tested.
3
Sample tested.
4
Guaranteed by design.
5
Guaranteed but not tested.
OP07C ELECTRICAL CHARACTERISTICS
VS = ±15 V, unless otherwise noted.
Table 2.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
TA = 25°C
Input Offset Voltage1 VOS 60 150 μV
= 15 0.4 0.6 MHz
VOL
Input Offset Current IOS 0.8 6.0 nA
Input Bias Current IB ±1.8 ±7.0 nA
Input Noise Voltage en p-p 0.1 Hz to 10 Hz3 0.38 0.65 μV p-p
Input Noise Voltage Density en fO = 10 Hz 10.5 20.0 nV/√Hz
fO = 100 Hz3 10.2 13.5 nV/√Hz
fO = 1 kHz 9.8 11.5 nV/√Hz
Input Noise Current In p-p 15 35 pA p-p
Input Noise Current Density In fO = 10 Hz 0.35 0.90 pA/√Hz
fO = 100 Hz3 0.15 0.27 pA/√Hz
fO = 1 kHz 0.13 0.18 pA/√Hz
Input Resistance, Common Mode R
120 GΩ
INCM
Input Voltage Range IVR ±13 ±14 V
Common-Mode Rejection Ratio CMRR VCM = ±13 V 100 120 dB
Power Supply Rejection Ratio PSRR VS = ±3 V to ±18 V 7 32 μV/V
Large Signal Voltage Gain AVO RL ≥ 2 kΩ, VO = ±10 V 120 400 V/mV
RL ≥ 500 Ω, VO = ±0.5 V, VS = ±3 V4 100 400 V/mV
−40°C ≤ TA ≤ +85°C
Input Offset Voltage1 VOS 85 250 μV
Voltage Drift Without External Trim4 TCVOS 0.5 1.8 μV/°C
OSN
Input Offset Current IOS 1.6 8.0 nA
Input Offset Current Drift TCIOS 12 50 pA/°C
Input Bias Current IB ±2.2 ±9.0 nA
Input Bias Current Drift TCIB 18 50 pA/°C
Input Voltage Range IVR ±13 ±13.5 V
Power Supply Rejection Ratio PSRR VS = ±3 V to ±18 V 10 51 μV/V
Large Signal Voltage Gain AVO RL ≥ 2 kΩ, VO = ±10 V 100 400 V/mV
Rev. G | Page 4 of 16
Page 5
Data Sheet OP07
Parameter Symbol Conditions Min Typ Max Unit
OUTPUT CHARACTERISTICS
TA = 25°C
Output Voltage Swing VO RL ≥ 10 kΩ ±12.0 ±13.0 V
RL ≥ 2 kΩ ±11.5 ±12.8 V
RL ≥ 1 kΩ ±12.0 V
−40°C ≤ TA ≤ +85°C
Output Voltage Swing VO RL ≥ 2 kΩ ±12 ±12.6 V
DYNAMIC PERFORMANCE
TA = 25°C
Slew Rate SR RL ≥ 2 kΩ3 0.1 0.3 V/μs
Closed-Loop Bandwidth BW A
Open-Loop Output Resistance RO VO = 0, IO = 0 60 Ω
Power Consumption Pd VS = ±15 V, No load 80 150 mW
VS = ±3 V, No load 4 8 mW
Offset Adjustment Range RP = 20 kΩ ±4 mV
1
Input offset voltage measurements are performed by automated test equipment approximately 0.5 seconds after application of power.
2
Long-term input offset voltage stability refers to the averaged trend time of VOS vs. the time over extended periods after the first 30 days of operation. Excluding the
initial hour of operation, changes in VOS during the first 30 operating days are typically 2.5 μV. Refer to the Typical Performance Characteristics section. Parameter is
sample tested.
3
Sample tested.
4
Guaranteed by design.
5
Guaranteed but not tested.
= 15 0.4 0.6 MHz
VOL
Rev. G | Page 5 of 16
Page 6
OP07 Data Sheet
±
±
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter Ratings
Supply Voltage (VS)
Input Voltage1
Differential Input Voltage
Output Short-Circuit Duration Indefinite
Storage Temperature Range
S and P Packages
Operating Temperature Range
OP07E
OP07C
Junction Temperature
Lead Temperature, Soldering (60 sec)
1
For supply voltages less than ±22 V, the absolute maximum input voltage is
equal to the supply voltage.
±22 V
22 V
30 V
−65°C to +125°C
0°C to 70°C
−40°C to +85°C
150°C
300°C
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
degradation or loss of functionality.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
The OP07 provides stable operation with load capacitance of up
to 500 pF and ±10 V swings; larger capacitances should be
decoupled with a 50 Ω decoupling resistor.
Stray thermoelectric voltages generated by dissimilar metals at
the contacts to the input terminals can degrade drift
performance. Therefore, best operation is obtained when both
input contacts are maintained at the same temperature,
preferably close to the package temperature.
Figure 32. High Stability Thermocouple Amplifier
Figure 33. Precision Absolute-Value Circuit
Rev. G | Page 12 of 16
Page 13
Data Sheet OP07
CONTROLLING DIMENSIONS
ARE IN MILLIMETERS; INCH DIMENSIONS
(IN PARENTHE
SES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR
R
EFERENCE ONLYAND ARE NOT APPROPRIATE FOR USE IN DES
IGN.
COMPLIANT TO JEDEC STANDARDS MS-012-AA
012407-A
0.25 (0.0098)
0.17 (0.0067)
1.27 (0.0500)
0.40 (0.0157)
0.50 (0.0196)
0.25 (0.0099)
45°
8°
0°
1.75 (0.0688)
1.35 (0.0532)
SEATING
PLANE
0.25 (0.0098)
0.10 (0.0040)
4
1
85
5.00(0.1968)
4.80(0.1890)
4.00 (0.1574)
3.80 (0.1497)
1.27 (0.0500)
BSC
6.20 (0.2441)
5.80 (0.2284)
0.51 (0.0201)
0.31 (0.0122)
COPLANARITY
0.10
COMPLIANT TO JEDEC STANDARDS MS-001
CONTROLLING DIMENSIONSARE IN INCHES; MILLIMETER DIMENSIONS
(IN PARENTHESES) ARE ROUNDED-OFF INCH EQUIVALENTS FOR
REFERENCE O NLYAND ARE NO T APPROPRIATE FOR USE IN DESIGN.
CORNER LEADS MAY BE CONFIGURED AS WHOLE OR HAL F LEADS.
070606-A
0.022 (0.56)
0.018 (0.46)
0.014 (0.36)
SEATING
PLANE
0.015
(0.38)
MIN
0.210 (5.33)
MAX
0.150 (3.81)
0.130 (3.30)
0.115 (2.92)
0.070 (1.78)
0.060 (1.52)
0.045 (1.14)
8
1
4
5
0.280 (7.11)
0.250 (6.35)
0.240 (6.10)
0.100 (2.54)
BSC
0.400 (10.16)
0.365 (9.27)
0.355 (9.02)
0.060 (1.52)
MAX
0.430 (10.92)
MAX
0.014 (0.36)
0.010 (0.25)
0.008 (0.20)
0.325 (8.26)
0.310 (7.87)
0.300 (7.62)
0.195 (4.95)
0.130 (3.30)
0.115 (2.92)
0.015 (0.38)
GAUGE
PLANE
0.005 (0.13)
MIN
OUTLINE DIMENSIONS
Figure 34. 8-Lead Standard Small Outline Package [SOIC_N]