Page 1
FOUR N-CHANNEL MOSFETS IN HERMETIC
DSG
FET 1
DSG
FET 3
DSG
FET 3
DSG
FET 4
.150
1.520
.260
.625
.125
(10 PLCS)
.187
TYP.
1.000
SQ.
.040 LEAD
DIA.
.500
MIN.
.156 DIA.
TYP.
.050
.270
.170 R.
TYP.
45°
REF
POWER PACKAGE
100V Thru 500V, Up To 25 Amp, N-Channel
MOSFET In Hermetic Metal Package
FEATURES
• Isolated Hermetic Metal Package
• Fast Switching
• Low R
• Available Screened To MIL-S-19500, TX, TXV and S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits.
DS(on)
OMD100
OMD200
OMD400
OMD500
4 11 R2
Supersedes 1 07 R1
MAXIMUM RATINGS PER TRANSISTOR @ 25°C
PART NUMBER V
DS
OMD100 100V .08 25A
OMD200 200V .11 25A
OMD400 400V .35 13A
OMD500 500V .43 11A
R
SCHEMATIC CONNECTION DIAGRAM
3.1 - 1
DS(on)
I
D
3.1
Page 2
3.1
G
D
S
G
D
S
OMD100 - OMD500
ELECTRICAL CHARACTERISTICS: (T
= 25°C unless otherwise noted) ELECTRICAL CHARACTERISTICS: (TC= 25°C unless otherwise noted)
C
STATIC P/N OMD100 (100V) STATIC P/N OMD200 (200V)
Parameter Min. Typ. Max. Units Test Conditions Parameter Min. Typ. Max. Units Test Conditions
BV
Drain-Source Breakdown
3.1 - 2
DSS
Voltage I
V
Gate-Threshold Voltage 2.0 4.0 V VDS= VGS, ID= 250 mAV
GS(th)
I
Gate-Body Leakage Forward 100 nA VGS= +20 V I
GSSF
I
Gate-Body Leakage Reverse - 100 nA VGS= -20 V I
GSSR
I
Zero Gate Voltage Drain 0.1 0.25 mA VDS= Max. Rat., VGS= 0 I
DSS
Current
I
On-State Drain Current
D(on)
V
Static Drain-Source On-State
DS(on)
R
DS(on)
1
Voltage
Static Drain-Source On-State
Resistance
R
Static Drain-Source On-State
DS(on)
Resistance
1
1
1
100 V
0.2 1.0 mA
35 A VDS 2 V
1.1 1.60 V V
.065 .080 V
.10 .160
DYNAMIC DYNAMIC
g
Forward Transductance
fs
C
Input Capacitance 2700 pF VGS= 0 C
iss
C
Output Capacitance 1300 pF VDS= 25 V C
oss
C
Reverse Transfer Capacitance 470 pF f = 1 MHz C
rss
t
Turn-On Delay Time 28 ns VDD= 30 V, ID@ 20 A t
d(on)
t
Rise Time 45 ns Rg= 5.0 W, VG= 10V t
r
t
Turn-Off Delay Time 100 ns t
d(off)
t
Fall Time 50 ns t
f
1
9.0 10 S(W ) VDS 2 V
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
Continuous Source Current
S
(Body Diode) symbol showing (Body Diode) symbol showing
I
SM
Source Current
1
(Body Diode) Junction rectifier. (Body Diode) Junction rectifier.
VSDDiode Forward Voltage
t
Reverse Recovery Time 400 ns
rr
1
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
- 40 A
- 160 A
- 2.5 V TC= 25 C, IS= -40 A, VGS= 0 VSDDiode Forward Voltage
VGS= 0, BV
= 250 mA Voltage ID= 250 mA
D
V
= 0.8 Max. Rat., VGS= 0, Current
DS
T
= 125° C TC= 125° C
C
GS
GS
, VGS= 10 V I
DS(on)
= 10 V, ID= 20 A
= 10 V, ID= 20 A
VGS= 10 V, ID= 20 A, R
TC= 125 C Resistance
(W)
(MOSFET switching times are
essentially independent of
operating temperature.)
Modified MOSPOWER I
the integral P-N I
T
J
dl
F
, ID= 20 A g
DS(on)
= 150 C, IF= IS,
/ds = 100 A/ms dlF/ds = 100 A/ms
Drain-Source Breakdown
DSS
Gate-Threshold Voltage 2.0 4.0 V VDS= VGS, ID= 250 mA
GS(th)
Gate-Body Leakage Forward 100 nA VGS= + 20 V
GSSF
Gate-Body Leakage Reverse -100 nA VGS= - 20 V
GSSR
Zero Gate Voltage Drain 0.1 0.25 mA VDS= Max. Rat., VGS= 0
DSS
200 V
0.2 1.0 mA
On-State Drain Current
D(on)
V
Static Drain-Source On-State
DS(on)
R
DS(on)
DS(on)
fs
iss
oss
rss
d(on)
r
d(off)
f
S
SM
t
rr
1
Voltage
Static Drain-Source On-State
Resistance
1
Static Drain-Source On-State
1
Forward Transductance
Input Capacitance 2400 pF VGS= 0
Output Capacitance 600 pF VDS= 25 V
Reverse Transfer Capacitance 250 pF f = 1 MHz
Turn-On Delay Time 25 ns VDD= 75 V, ID@ 16 A
Rise Time 60 ns Rg= 5.0 W,VGS= 10V
Turn-Off Delay Time 85 ns
Fall Time 38 ns
Continuous Source Current
Source Current
Reverse Recovery Time 350 ns
1
30 A VDS 2 V
1.36 1.76 V V
.085 .110 V
0.14 .200
1
10.0 12.5 S(W) VDS 2 V
- 30 A
1
1
- 120 A
- 2 V TC= 25 C, IS= -30 A, VGS= 0
VGS= 0,
VDS= 0.8 Max. Rat., VGS= 0,
, VGS= 10 V
DS(on)
= 10 V, ID= 16 A
GS
= 10 V, ID= 16 A
GS
VGS= 10 V, ID= 16 A,
TC= 125 C
(W)
(MOSFET switching times are
essentially independent of
operating temperature.)
Modified MOSPOWER
the integral P-N
T
J
, ID= 16 A
DS(on)
= 150 C, IF= IS,
Page 3
ELECTRICAL CHARACTERISTICS: (T
G
D
S
G
D
S
= 25°C unless otherwise noted) ELECTRICAL CHARACTERISTICS: (TC= 25°C unless otherwise noted)
C
STATIC P/N OMD400 (400V) STATIC P/N OMD500 (500V)
Parameter Min. Typ. Max. Units Test Conditions Parameter Min. Typ. Max. Units Test Conditions
BV
Drain-Source Breakdown
3.1 - 3
DSS
Voltage I
V
Gate-Threshold Voltage 2.0 4.0 V VDS= VGS, ID= 250 mAV
GS(th)
I
Gate-Body Leakage Forward 100 nA VGS= +20 V I
GSSF
I
Gate-Body Leakage Reverse - 100 nA VGS= - 20 V I
GSSR
I
Zero Gate Voltage Drain 0.1 0.25 mA VDS= Max. Rat., VGS= 0 I
DSS
Current
I
On-State Drain Current
D(on)
V
Static Drain-Source On-State
DS(on)
R
DS(on)
1
Voltage
Static Drain-Source On-State
Resistance
R
Static Drain-Source On-State
DS(on)
Resistance
1
1
1
400 V
0.2 1.0 mA
15 A VDS 2 V
2.0 2.8 V V
0.30 .35 V
.60 .70
DYNAMIC DYNAMIC
g
Forward Transductance
fs
C
Input Capacitance 2900 pF VGS= 0 C
iss
C
Output Capacitance 450 pF VDS= 25 V C
oss
C
Reverse Transfer Capacitance 150 pF f = 1 MHz C
rss
t
Turn-On Delay Time 30 ns VDD= 200 V, ID@ 8.0 A t
d(on)
t
Rise Time 40 ns Rg=5.0 W, VGS=10V t
r
t
Turn-Off Delay Time 80 ns t
d(off)
t
Fall Time 30 ns t
f
1
6.0 9.6 S(W) VDS 2 V
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
Continuous Source Current
S
(Body Diode) symbol showing (Body Diode) symbol showing
I
SM
Source Current
1
(Body Diode) Junction rectifier. (Body Diode) Junction rectifier.
VSDDiode Forward Voltage
t
Reverse Recovery Time 600 ns
rr
1
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
- 15 A
- 60 A
- 1.6 V TC= 25 C, IS= -15 A, VGS= 0 VSDDiode Forward Voltage
VGS= 0, BV
= 250 mA Voltage ID= 250 mA
D
V
= 0.8 Max. Rat., VGS= 0, Current
DS
T
= 125° C TC= 125° C
C
GS
GS
, VGS= 10 V I
DS(on)
= 10 V, ID= 8.0 A
= 10 V, ID= 8.0 A
VGS= 10 V, ID= 8.0 A, R
TC= 125 C Resistance
(W)
(MOSFET switching times are
essentially independent of
operating temperature.)
Modified MOSPOWER I
the integral P-N I
T
J
dl
F
, ID= 8.0 A g
DS(on)
= 100 C, IF= IS,
/ds = 100 A/ms dlF/ds = 100 A/ms
Drain-Source Breakdown
DSS
Gate-Threshold Voltage 2.0 4.0 V VDS= VGS, ID= 250 mA
GS(th)
Gate-Body Leakage Forward 100 nA VGS= +20 V
GSSF
Gate-Body Leakage Reverse - 100 nA VGS= - 20 V
GSSR
Zero Gate Voltage Drain 0.1 0.25 mA VDS= Max. Rat., VGS= 0
DSS
500 V
0.2 1.0 mA
On-State Drain Current
D(on)
V
Static Drain-Source On-State
DS(on)
R
DS(on)
DS(on)
fs
iss
oss
rss
d(on)
r
d(off)
f
S
SM
t
rr
1
Voltage
Static Drain-Source On-State
Resistance
1
Static Drain-Source On-State
1
Forward Transductance
Input Capacitance 2600 pF VGS= 0
Output Capacitance 280 pF VDS= 25 V
Reverse Transfer Capacitance 40 pF f = 1 MHz
Turn-On Delay Time 30 ns VDD= 210 V, ID@ 7.0 A
Rise Time 46 ns Rg= 5.0 W, VGS= 10 V
Turn-Off Delay Time 75 ns
Fall Time 31 ns
Continuous Source Current
Source Current
Reverse Recovery Time 700 ns
1
13 A VDS 2 V
2.1 3.0 V V
0.35 0.43 V
0.66 0.88
1
6.0 7.2 S(W) VDS 2 V
- 13 A
1
1
- 52 A
- 1.4 V TC= 25 C, IS= -13 A, VGS= 0
VGS= 0,
VDS= 0.8 Max. Rat., VGS= 0,
, VGS= 10 V
DS(on)
= 10 V, ID= 7.0 A
GS
= 10 V, ID= 7.0 A
GS
VGS= 10 V, ID= 7.0 A,
TC= 125 C
(W)
(MOSFET switching times are
essentially independent of
operating temperature.)
Modified MOSPOWER
the integral P-N
T
J
, ID= 7.0 A
DS(on)
= 150 C, IF= IS,
OMD100 - OMD500
3.1
Page 4
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
OMD100 - OMD500
ABSOLUTE MAXIMUM RATINGS (TC= 25°C unless otherwise noted)
V
DS
V
DGR
ID@ TC= 25°C Continuous Drain Current
ID@ TC= 100°C Continuous Drain Current
I
DM
V
GS
PD@ TC= 25°C Maximum Power Dissipation 125 125 125 125 W
PD@ TC= 100°C Maximum Power Dissipation 50 50 50 50 W
Junction To Case Linear Derating Factor 1.0 1.0 1.0 1.0 W/°C
Junction To Ambient Linear Derating Factor .033 .033 .033 .033 W/°C
T
J
T
stg
Lead Temperature (1/16" from case for 10 secs.) 300 300 300 300 °C
1 Pulse Test: Pulse width 300 µsec. Duty Cycle 2%.
2 Package pin limitation = 10 Amps
THERMAL RESISTANCE
R
thJC
R
thJA
Parameter OMD100 OMD200 OMD400 OMD500 Units
Drain-Source Voltage 100 200 400 500 V
Drain-Gate Voltage (RGS= 1 M ) 100 200 400 500 V
Pulsed Drain Current
2
2
1
± 25 ± 25 ± 13 ± 11 A
± 16 ± 16 ±.8 ± 7 A
± 100 ± 80 ± 54 ± 40 A
Gate-Source Voltage ± 20 ± 20 ± 20 ±20 V
Operating and
Storage Temperature Range -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
Junction-to-Case 1.0 °C/W
Junction-to-Ambient 30 °C/W Free Air Operation
3.1
POWER DERATING
PACKAGE OPTIONS
MOD PAK
Note: MOSFETs are also available in Z-Tab, dual and quad pak styles. Please call the factory for more information.
6 PIN SIP
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