Datasheet OM6214SS, OM6216SS, OM6215SS, OM6217SS Datasheet (OMNIREL)

TWO POWER MOSFETS IN HERMETIC
ISOLATED SIP PACKAGE

100V Thru 500V, Dual High Current,
N-Channel MOSFETs

FEATURES

• Two Isolated MOSFETs In A Hermetic Metal Package

• Fast Switching, Low Drive Current

• Ease of Paralleling For Added Power

• Low R

• Available Screened To MIL-S-19500, TX, TXV And S Levels

DESCRIPTION

This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications
such as switching power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.

DS(on)

OM6214SS
OM6215SS

OM6216SS
OM6217SS

MAXIMUM RATINGS

PART NUMBER V

OM6214SS 100V .065 30A
OM6215SS 200V .095 25A
OM6216SS 400V .3 15A
OM6217SS 500V .4 13A

SCHEMATIC CONNECTION DIAGRAM

DS

R

DS(ON)

FET#1 FET#2

DSGGSD

I

D(MAX)

3.1

4 11 R4
Supersedes 1 07 R3

3.1 - 109

3.1

G

D

S

G

D

S

OM6214SS - OM6217SS

ELECTRICAL CHARACTERISTICS: T

= 25° unless otherwise noted ELECTRICAL CHARACTERISTICS: TC= 25° unless otherwise noted

C

STATIC P/N OM6214SS (Per FET) (100 Volt) STATIC P/N OM6215SS (Per FET) (200 Volt)

Parameter Min. Typ. Max. Units Test Conditions Parameter Min. Typ. Max. Units Test Conditions

BV

Drain-Source Breakdown 100 V VGS= 0, BV

DSS

Voltage I

V

Gate-Threshold Voltage 2.0 4.0 V VDS= VGS, ID= 250 mAV

GS(th)

I

Gate-Body Leakage ±100 nA VGS= ±20 V I

GSSF

I

Zero Gate Voltage Drain 0.1 0.25 mA VDS= Max. Rat., VGS= 0 I

DSS

Current 0.2 1.0 mA V

I

D(on)

V

DS(on)

R

DS(on)

R

DS(on)

3.1 - 110

On-State Drain Current
Static Drain-Source On-State 1.1 1.3 V VGS= 10 V, ID= 20 A V

1

Voltage
Static Drain-Source On-State .055 .065 VGS= 10 V, ID= 20 A R
Resistance

1

Static Drain-Source On-State .09 0.11 VGS= 10 V, ID= 20 A, R
Resistance

1

1

30 A VDS 2 V

DYNAMIC DYNAMIC

g

Forward Transductance

fs

C

Input Capacitance 2700 pF VGS= 0 C

iss

C

Output Capacitance 1300 pF VDS= 25 V C

oss

C

Reverse Transfer Capacitance 470 pF f = 1 MHz C

rss

t

Turn-On Delay Time 28 ns VDD= 30 V, ID@ 20 A t

d(on)

t

Rise Time 45 ns Rg= 5.0 W, VG= 10V t

r

t

Turn-Off Delay Time 100 ns t

d(off)

t

Fall Time 50 ns t

f

1

9.0 10 S(W ) VDS 2 V

= 250 mA Voltage ID= 250 mA

D

= 0.8 Max. Rat., VGS= 0, Current 0.2 1.0 mA VDS= 0.8 Max. Rat., VGS= 0,

DS

T

= 125° C TC= 125° C

C

, VGS= 10 V I

DS(on)

TC= 125 C Resistance

(W)

(MOSFET) switching times are
essentially independent of
operating temperature.

, ID= 20 A g

DS(on)

BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS

I

Continuous Source Current - 30 A Modified MOSPOWER I

S

(Body Diode) symbol showing (Body Diode) symbol showing

I

Source Current

SM

(Body Diode) Junction rectifier. (Body Diode) Junction rectifier.
VSDDiode Forward Voltage
t

Reverse Recovery Time 400 ns TJ= 150 C,IF= IS,t

rr

1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.

1

1

- 140 A the integral P-N I

- 2.5 V TC= 25 C, IS= -40 A, VGS= 0 VSDDiode Forward Voltage

dl

/ds = 100 A/ms dlF/ds = 100 A/ms

F

Drain-Source Breakdown 200 V VGS= 0,

DSS

Gate-Threshold Voltage 2.0 4.0 V VDS= V

GS(th)

Gate-Body Leakage ±100 nA VGS= ±20 V

GSSF

Zero Gate Voltage Drain 0.1 0.25 mA VDS= Max. Rat., VGS= 0

DSS

On-State Drain Current

D(on)

Static Drain-Source On-State 1.36 1.52 V VGS= 10 V, ID= 16 A

DS(on)

DS(on)

DS(on)

fs

iss

oss

rss

d(on)

r

d(off)

f

S

SM

rr

1

Voltage
Static Drain-Source On-State .085 .095 VGS= 10 V, ID= 16 A
Resistance

1

Static Drain-Source On-State 0.14 0.17 VGS= 10 V, ID= 16 A,

1

Forward Transductance
Input Capacitance 2400 pF VGS= 0
Output Capacitance 600 pF VDS= 25 V
Reverse Transfer Capacitance 250 pF f = 1 MHz
Turn-On Delay Time 25 ns VDD= 75 V, ID@ 16 A
Rise Time 60 ns Rg= 5.0 W,VGS= 10V
Turn-Off Delay Time 85 ns
Fall Time 38 ns

Continuous Source Current - 25 A Modified MOSPOWER

Source Current

Reverse Recovery Time 350 ns TJ= 150 C,IF= IS,

1

1

1

1

25 A VDS 2 V

8.0 12.5 S(W ) VDS 2 V

(W)

- 100 A the integral P-N

- 2 V TC= 25 C, IS= -30 A, VGS= 0

, I

= 250 m

GS

D

, VGS= 10 V

DS(on)

TC= 125 C

, ID= 16 A

DS(on)

(MOSFET) switching times are
essentially independent of
operating temperature.

ELECTRICAL CHARACTERISTICS: T

G

D

S

G

D

S

= 25° unless otherwise noted ELECTRICAL CHARACTERISTICS: TC= 25° unless otherwise noted

C

STATIC P/N OM6216SS (Per FET) (400 Volt) STATIC P/N OM6217SS (Per FET) (500 Volt)

Parameter Min. Typ. Max. Units Test Conditions Parameter Min. Typ. Max. Units Test Conditions

BV

Drain-Source Breakdown 400 V VGS= 0, BV

DSS

V

GS(th)

I

GSSF

I

DSS

I

D(on)

V

DS(on)

R

DS(on)

R

DS(on)

3.1 - 111

Voltage I

Gate-Threshold Voltage 2.0 4.0 V VDS= VGS, ID= 250 mAV

Gate-Body Leakage ±100 nA VGS= ±20 V I

Zero Gate Voltage Drain 0.1 0.25 mA VDS= Max. Rat., VGS= 0 I

Current 0.2 1.0 mA V

On-State Drain Current

1

15 A VDS 2 V

Static Drain-Source On-State 2.0 2.4 V VGS= 10 V, ID= 8 A V

1

Voltage

Static Drain-Source On-State 0.25 0.3 VGS= 10 V, ID= 8 A R

Resistance

1

Static Drain-Source On-State 0.50 0.60 VGS= 10 V, ID= 8 A, R

Resistance

1

= 250 mA Voltage ID= 250 mA

D

= 0.8 Max. Rat., VGS= 0, Current 0.2 1.0 mA VDS= 0.8 Max. Rat., VGS= 0,

DS

T

= 125° C TC= 125° C

C

, VGS= 10 V I

DS(on)

TC= 125 C Resistance

DYNAMIC DYNAMIC

g

Forward Transductance

fs

C

Input Capacitance 2900 pF VGS= 0 C

iss

C

Output Capacitance 450 pF VDS= 25 V C

oss

C

Reverse Transfer Capacitance 150 pF f = 1 MHz C

rss

t

Turn-On Delay Time 30 ns VDD= 200 V, ID@ 8.0 A t

d(on)

t

Rise Time 40 ns Rg=5.0 W, VGS=10V t

r

t

Turn-Off Delay Time 80 ns t

d(off)

t

Fall Time 30 ns t

f

1

8.0 9.6 S(W) VDS 2 V

(MOSFET) switching times are
essentially independent of
operating temperature.

, ID= 58A g

DS(on)

BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS

I

Continuous Source Current - 15 A Modified MOSPOWER I

S

(Body Diode) symbol showing (Body Diode) symbol showing
I

Source Current

SM

(Body Diode) Junction rectifier. (Body Diode) Junction rectifier.
VSDDiode Forward Voltage
t

Reverse Recovery Time 400 ns TJ= 150 C,IF= IS,t

rr

1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.

1

1

- 60 A the integral P-N I

- 1.6 V TC= 25 C, IS= -15 A, VGS= 0 VSDDiode Forward Voltage

dl

/ds = 100 A/ms dlF/ds = 100 A/ms

F

Drain-Source Breakdown 500 V VGS= 0,

DSS

Gate-Threshold Voltage 2.0 4.0 V VDS= V

GS(th)

Gate-Body Leakage ±100 nA VGS= ±20 V

GSSF

Zero Gate Voltage Drain 0.1 0.25 mA VDS= Max. Rat., VGS= 0

DSS

On-State Drain Current

D(on)

Static Drain-Source On-State 2.1 2.8 V VGS= 10 V, ID= 7 A

DS(on)

DS(on)

DS(on)

fs

iss

oss

rss

d(on)

r

d(off)

f

S

SM

rr

1

Voltage
Static Drain-Source On-State 0.3 0.4 VGS= 10 V, ID= 7 A
Resistance

1

Static Drain-Source On-State 0.66 0.88 VGS= 10 V, ID= 7 A,

1

Forward Transductance
Input Capacitance 2600 pF VGS= 0
Output Capacitance 280 pF VDS= 25 V
Reverse Transfer Capacitance 40 pF f = 1 MHz
Turn-On Delay Time 30 ns VDD= 210 V, ID@ 7.0 A
Rise Time 46 ns Rg= 5.0 W, VGS= 10 V
Turn-Off Delay Time 75 ns
Fall Time 31 ns

Continuous Source Current - 13 A Modified MOSPOWER

Source Current

Reverse Recovery Time 400 ns TJ= 150 C,IF= IS,

1

1

1

1

13 A VDS 2 V

6.0 7.2 S(W ) VDS 2 V

(W) (W)

- 52 A the integral P-N

- 1.4 V TC= 25 C, IS= -13 A, VGS= 0

, I

= 250 mA

GS

D

, VGS= 10 V

DS(on)

TC= 125 C

, ID= 7 A

DS(on)

(MOSFET) switching times are
essentially independent of
operating temperature.

OM6214SS - OM6217SS

3.1

OM6214SS - OM6217SS

205 Crawford Street, Leominster, MA 01 453 USA [phone] FAX [phone]

.140 TYP.

.200 TYP.

.270
MAX.

.060 DIA.TYP.
6 PLACES

1.375

.500
MIN.

.302

.265

.487

.752
REF.

.118

.150 DIA.
THRU 2
PLACES

.040

.770

1.000

.188
REF.

ABSOLUTE MAXIMUM RATINGS (TC= 25°C unless otherwise noted)

V

DS

V

DGR

ID@ TC= 25°C Continuous Drain Current ± 30 ± 25 ± 15 ± 13 A
ID@ TC= 100°C Continuous Drain Current ± 20 ± 16 ± 9 ± 8 A
I

DM

PD@ TC= 25°C Maximum Power Dissipation 125 125 125 125 W
PD@ TC= 100°C Maximum Power Dissipation 50 50 50 50 W
Junction To Case Linear Derating Factor
Junction To Ambient Linear Derating Factor .025 .025 .025 .025 W/°C
T

J

T

stg

Lead Temperature (1/16" from case for 10 secs.) 300 300 300 300 °C

1 Pulse Test: Pulse width 300 µsec. Duty Cycle 2%.

THERMAL RESISTANCE (Per FET at TA= 25°C)

R

thJC

R

thJA

Parameter OM6214SS OM6215SS OM6216SS OM6217SS Units

Drain-Source Voltage 100 200 400 500 V
Drain-Gate Voltage (RGS= 1 M ) 100 200 400 500 V

Pulsed Drain Current

1

1

± 140 ± 100 ± 60 ± 52 A

1.0 1.0 1.0 1.0 W/°C

Operating and
Storage Temperature Range -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C

Junction-to-Case 1.0 °C/W
Junction-to-Ambient 40 °C/W Free Air Operation

3.1

POWER DERATING (Per Device) MECHANICAL OUTLINE

180
150

120

90

60

30

- POWER DISSIPATION (WATTS)

D

0

P

0 25 50 75 100 125 150 175

TC- CASE TEMPERATURE ( °C)

RqJC= 1.0°C/W