OM6009SA
OM6010SA
OM6011SA
OM6012SA
OM6109SA
OM6110SA
POWER MOSFETS IN HERMETIC ISOLATED
TO-254AA PACKAGE
100V Thru 500V, Up To 22 Amp, N-Channel
MOSFET In Hermetic Metal Package, With
Optional Zener Gate Clamp Protection
FEATURES
• Isolated Hermetic Metal Package
• Fast Switching
• Low R
• Available Hi-Rel Screened To MIL-S-19500, TX, TXV And S Levels
• Bi-Lateral Zener Gate Protection (Optional)
• Ceramic Feedthroughs Available
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications
such as switching power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits. The MOSFET gates are protected using
bi-lateral zeners in the OM6109SA series.
DS(on)
OM6111SA
OM6112SA
MAXIMUM RATINGS
Note: OM61XX Series include gate protection circuitry.
4 11 R3
Supersedes 1 07 R2
PART NUMBER V
OM6009SA, OM6109SA 100V .095 22A
OM6010SA, OM6110SA 200V .18 18A
OM6011SA, OM6111SA 400V .55 10A
OM6012SA, OM6112SA 500V .85 8A
DS
R
DS(ON)
I
D(MAX)
SCHEMATIC POWER RATING
3.1 - 79
3.1
3.1
G
D
S
G
D
S
OM6009SA - OM6112SA
ELECTRICAL CHARACTERISTICS: T
= 25° unless otherwise noted ELECTRICAL CHARACTERISTICS: TC= 25° unless otherwise noted
C
STATIC P/N OM6009SA / OM6109SA STATIC P/N OM6010SA / OM6110SA
Parameter Min. Typ. Max. Units Test Conditions Parameter Min. Typ. Max. Units Test Conditions
BV
Drain-Source Breakdown 100 V VGS= 0, BV
DSS
V
I
I
I
I
I
V
R
R
3.1 - 80
Voltage I
Gate-Threshold Voltage 2.0 4.0 V VDS= VGS, ID= 250 mAV
GS(th)
Gate-Body Leakage Forward 100 nA VGS= 20 V I
GSSF
Gate-Body Leakage Reverse -100 nA VGS= - 20 V I
GSSR
Gate-Body Leakage (OM6109) ± 500 nA VGS= ± 12.8 V I
GSS
Zero Gate Voltage Drain 0.1 0.25 mA VDS= Max. Rat., VGS= 0 I
DSS
Current 0.2 1.0 mA V
On-State Drain Current
D(on)
Static Drain-Source On-State 1.275 1.425 V VGS= 10 V, ID= 15 A V
DS(on)
DS(on)
DS(on)
1
Voltage
Static Drain-Source On-State .085 .095 VGS= 10 V, ID= 15 A R
Resistance
1
Static Drain-Source On-State .130 .155 VGS= 10 V, ID= 15 A, R
Resistance
1
1
22 A VDS 2 V
= 250 mA Voltage ID= 250 mA
D
= 0.8 Max. Rat., VGS= 0, Current 0.2 1.0 mA VDS= 0.8 Max. Rat., VGS= 0,
DS
T
= 125° C TC= 125° C
C
, VGS= 10 V I
DS(on)
TC= 125 C Resistance
DYNAMIC DYNAMIC
g
Forward Transductance
fs
C
Input Capacitance 1275 pF VGS= 0 C
iss
C
Output Capacitance 550 pF VDS= 25 V C
oss
C
Reverse Transfer Capacitance 160 pF f = 1 MHz C
rss
T
Turn-On Delay Time 16 ns VDD= 30 V, ID= 5 A T
d(on)
t
Rise Time 19 ns Rg= 5 W, VGS= 10 V t
r
T
Turn-Off Delay Time 42 ns T
d(off)
t
Fall Time 24 ns t
f
1
10.0 S(W ) VDS 2 V
, ID= 15 A g
DS(on)
(MOSFET) switching times are
essentially independent of
operating temperature.
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
Continuous Source Current - 27 A Modified MOSPOWER I
S
(Body Diode) symbol showing (Body Diode) symbol showing
I
Source Current
SM
(Body Diode) Junction rectifier. (Body Diode) Junction rectifier.
VSDDiode Forward Voltage
t
Reverse Recovery Time 200 ns TJ= 150 C,IF= IS,t
rr
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
1
1
- 108 A the integral P-N I
- 2.5 V TC= 25 C, IS= -24 A, VGS= 0 VSDDiode Forward Voltage
dl
/ds = 100 A/ms dlF/ds = 100 A/ms
F
Drain-Source Breakdown 200 V VGS= 0,
DSS
Gate-Threshold Voltage 2.0 4.0 V VDS= V
GS(th)
Gate-Body Leakage Forward 100 nA VGS= 20 V
GSSF
Gate-Body Leakage Reverse - 100 nA VGS= - 20 V
GSSR
Gate-Body Leakage (OM6110) ± 500 nA VGS= ± 12.8 V
GSS
Zero Gate Voltage Drain 0.1 0.25 mA VDS= Max. Rat., VGS= 0
DSS
On-State Drain Current
D(on)
Static Drain-Source On-State 1.4 1.8 V VGS= 10 V, ID= 10 A
DS(on)
DS(on)
DS(on)
fs
iss
oss
rss
d(on)
r
d(off)
f
S
SM
rr
1
Voltage
Static Drain-Source On-State 0.14 0.18 VGS= 10 V, ID= 10 A
Resistance
1
Static Drain-Source On-State 0.28 0.36 VGS= 10 V, ID= 10 A,
1
Forward Transductance
Input Capacitance 1000 pF VGS= 0
Output Capacitance 250 pF VDS= 25 V
Reverse Transfer Capacitance 100 pF f = 1 MHz
Turn-On Delay Time 17 ns VDD= 75 V, ID@ 18 A
Rise Time 52 ns Rg= 5 W, VGS= 10 V
Turn-Off Delay Time 36 ns
Fall Time 30 ns
Continuous Source Current - 18 A Modified MOSPOWER
Source Current
Reverse Recovery Time 350 ns TJ= 150 C,IF= IS,
1
1
1
1
18 A VDS 2 V
6.0 S(W ) VDS 2 V
- 72 A the integral P-N
- 2 V TC= 25 C, IS= -18 A, VGS= 0
, I
= 250 mA
GS
D
, VGS= 10 V
DS(on)
TC= 125 C
(W) (W)
(MOSFET) switching times are
essentially independent of
operating temperature.
DS(on)
, ID= 10 A
ELECTRICAL CHARACTERISTICS: T
G
D
S
G
D
S
= 25° unless otherwise noted ELECTRICAL CHARACTERISTICS: TC= 25° unless otherwise noted
C
STATIC P/N OM6011SA / OM6111SA STATIC P/N OM6012SA / OM6112SA
Parameter Min. Typ. Max. Units Test Conditions Parameter Min. Typ. Max. Units Test Conditions
BV
Drain-Source Breakdown 400 V VGS= 0, BV
DSS
V
I
I
I
I
I
V
R
3.1 - 81
R
Voltage I
Gate-Threshold Voltage 2.0 4.0 V VDS= VGS, ID= 250 mAV
GS(th)
Gate-Body Leakage Forward 100 nA VGS= 20 V I
GSSF
Gate-Body Leakage Reverse -100 nA VGS= - 20 V I
GSSR
Gate-Body Leakage (OM6111) ± 500 nA VGS= ± 12.8 V I
GSS
Zero Gate Voltage Drain 0.1 0.25 mA VDS= Max. Rat., VGS= 0 I
DSS
Current 0.2 1.0 mA V
On-State Drain Current
D(on)
Static Drain-Source On-State 2.35 2.75 V VGS= 10 V, ID= 5 A V
DS(on)
DS(on)
DS(on)
1
Voltage
Static Drain-Source On-State 0.47 0.55 VGS= 10 V, ID= 5 A R
Resistance
1
Static Drain-Source On-State 0.93 1.10 VGS= 10 V, ID= 5 A, R
Resistance
1
1
10 A VDS 2 V
= 250 mA Voltage ID= 250 mA
D
= 0.8 Max. Rat., VGS= 0, Current 0.2 1.0 mA VDS= 0.8 Max. Rat., VGS= 0,
DS
T
= 125° C TC= 125° C
C
, VGS= 10 V I
DS(on)
TC= 125 C Resistance
DYNAMIC DYNAMIC
g
Forward Transductance
fs
C
Input Capacitance 1150 pF VGS= 0 C
iss
C
Output Capacitance 165 pF VDS= 25 V C
oss
C
Reverse Transfer Capacitance 70 pF f = 1 MHz C
rss
T
Turn-On Delay Time 17 ns VDD= 175 V, ID@ 5 A T
d(on)
t
Rise Time 12 ns Rg= 5 W, VGS= 10 V t
r
T
Turn-Off Delay Time 45 ns T
d(off)
t
Fall Time 30 ns t
f
1
4.0 S(W ) VDS 2 V
(MOSFET) switching times are
essentially independent of
operating temperature.
, ID= 5 A g
DS(on)
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
Continuous Source Current - 10 A
S
(Body Diode)
I
SM
Source Current
1
- 40 A the integral P-N
(Body Diode)
VSDDiode Forward Voltage
t
Reverse Recovery Time 530 ns TJ= 150 C,IF= IS,t
rr
1
- 2 V TC= 25 C, IS= -10 A, VGS= 0 VSDDiode Forward Voltage
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
Modified MOSPOWER I
symbol showing (Body Diode) symbol showing
Junction rectifier. (Body Diode) Junction rectifier.
dl
/ds = 100 A/ms dlF/ds = 100 A/ms
F
Drain-Source Breakdown 500 V VGS= 0,
DSS
Gate-Threshold Voltage 2.0 4.0 V VDS= V
GS(th)
Gate-Body Leakage Forward 100 nA VGS= 20 V
GSSF
Gate-Body Leakage Reverse - 100 nA VGS= - 20 V
GSSR
Gate-Body Leakage (OM6112) ± 500 nA VGS= ± 12.8 V
GSS
Zero Gate Voltage Drain 0.1 0.25 mA VDS= Max. Rat., VGS= 0
DSS
On-State Drain Current
D(on)
Static Drain-Source On-State 3.2 3.4 V VGS= 10 V, ID= 4 A
DS(on)
DS(on)
DS(on)
fs
iss
oss
rss
d(on)
r
d(off)
f
S
I
SM
rr
1
Voltage
Static Drain-Source On-State 0.8 0.85 VGS= 10 V, ID= 4 A
Resistance
1
Static Drain-Source On-State 1.50 1.65 VGS= 10 V, ID= 4 A,
1
Forward Transductance
Input Capacitance 1275 pF VGS= 0
Output Capacitance 200 pF VDS= 25 V
Reverse Transfer Capacitance 85 pF f = 1 MHz
Turn-On Delay Time 17 ns VDD= 200 V, ID= 4 A
Rise Time 5 ns Rg= 5 W, VGS= 10 V
Turn-Off Delay Time 42 ns
Fall Time 14 ns
Continuous Source Current - 8 A
Source Current
Reverse Recovery Time 700 ns TJ= 150 C,IF= IS,
1
1
1
1
8.0 A VDS 2 V
4.0 S(W ) VDS 2 V
- 32 A the integral P-N
- 2 V TC= 25 C, IS= -18 A, VGS= 0
, I
= 250 mA
GS
D
, VGS= 10 V
DS(on)
TC= 125 C
(W) (W)
(MOSFET) switching times are
essentially independent of
operating temperature.
Modified MOSPOWER
DS(on)
, ID= 4 A
OM6009SA - OM6112SA
3.1
OM6009SA - OM6112SA
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
.144 DIA.
.050
.040
.260
.249
.685
.665
.800
.790
.545
.535
.550
.510
.045
.035
.550
.530
.150 TYP.
.150 TYP.
.005
.040 DIA.
3 PLCS.
.150
.260
MAX
.040
.940
.500
MIN.
.150
.125
2 PLCS.
.290
.125 DIA.
2 PLS.
.200
.540
.250
.740
.540
.100
2 PLCS.
.300
ABSOLUTE MAXIMUM RATINGS (TC= 25°C unless otherwise noted)
V
DS
V
DGR
ID@ TC= 25°C Continuous Drain Current
ID@ TC= 100°C Continuous Drain Current
I
DM
V
GS
PD@ TC= 25°C Maximum Power Dissipation 125 125 125 125 W
PD@ TC= 100°C Maximum Power Dissipation 50 50 50 50 W
Junction To Case Linear Derating Factor 1.0 1.0 1.0 1.0 W/°C
Junction To Ambient Linear Derating Factor .020 .020 .020 .020 W/°C
T
J
T
stg
Lead Temperature (1/16" from case for 10 secs.) 300 300 300 300 °C
1 Pulse Test: Pulse width 300 µsec. Duty Cycle 2%.
2 Package Pin Limitation = 25 Amps
THERMAL RESISTANCE
R
thJC
R
thJA
OM6009 OM6010 OM6011 OM6012
Parameter OM6109 OM6110 OM6111 OM6112 Units
Drain-Source Voltage 100 200 400 500 V
Drain-Gate Voltage (RGS= 1 M ) 100 200 400 500 V
Pulsed Drain Current
2
2
1
± 22 ± 18 ± 10 ± 8 A
± 17 ± 11 ± 6 ± 5 A
± 88 ± 72 ± 40 ± 32 A
Gate-Source Volt. (Unclamped Gate) ± 20 ± 20 ± 20 ± 20 V
Operating and
Storage Temperature Range -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
Junction-to-Case 1.0 °C/W
Junction-to-Ambient 50 °C/W Free Air Operation
3.1
MECHANICAL OUTLINE
123
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
NOTE: Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter “C” to the part number.
MOD PAK Z-TAB 6 PIN SIP
Example - OMXXXXCSA MOSFETs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information.
PACKAGE OPTIONS
12 3
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