Page 1
3.1 - 97
3.1
400V Thru 1000V, Up To 26 Amp N-Channel,
Size 6 MOSFETs, High Energy Capability
4 11 R2
Supersedes 1 07 R1
POWER MOSFETS IN HERMETIC
ISOLATED JEDEC TO-258AA SIZE 6 DIE
FEATURES
• Isolated Hermetic Metal Package
• Size 6 Die, High Energy
• Fast Switching, Low Drive Current
• Ease of Paralleling For Added Power
• Low R
DS(on)
• Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits. This series also features avalanche high energy capability
at elevated temperatures.
MAXIMUM RATINGS
PART NUMBER V
DS
R
DS(ON)
ID (Amp)
OM6025SC/OM6032SC 400 .20 24
OM6026SC/OM6031SC 500 .27 22
OM6027SC/OM6028SC 1000 1.30 10
SCHEMATIC
OM6027SC
OM6028SC
OM6031SC
OM6032SC
OM6025SC
OM6026SC
Page 2
ABSOLUTE MAXIMUM RATINGS (TC= 25°C unless otherwise noted)
Parameter OM6025SC OM6026SC OM6027SC Units
OM6032SC OM6031SC OM6028SC
V
DS
Drain-Source Voltage 400 500 1000 V
V
DGR
Drain-Gate Voltage (RGS= 1 M ) 400 500 1000 V
ID@ TC= 25°C Continuous Drain Current 24 22 10 A
I
DM
Pulsed Drain Current 92 85 40 A
PD@ TC= 25°C Maximum Power Dissipation 165 165 165 W
Derate Above 25°C Ambient .025 .025 .025 W/°C
W
DSS
(1) Single Pulse Energy
Drain To Source @ 25°C 1000 1200 1000 mJ
T
J
Operating and
T
stg
Storage Temperature Range -55 to 150 -55 to 150 -55 to 150 °C
Lead Temperature (1/8" from case for 5 secs.) 275 275 275 °C
Note 1: VDD= 50V, ID= as noted
THERMAL RESISTANCE (MAXIMUM) at TA= 25°C
R
thJC
Junction-to-Case .76 °C/W
R
thJA
Junction-to-Ambient 40 °C/W Free Air Operation
Derate above 25°C T
C
1.32 W/°C
3.1 - 98
OM6025SC - OM6032SC
3.1
.707
.697
.750
.500
.835
.815
.695
.685
.165
.155
.200 TYP.
.550
.530
.270
.240
.045
.035
.140 TYP.
.092 MAX.
.065
.055
.005
.140
.270
MAX.
.035
.005
.045
.695
.685
.250
TYP.
.125 ∅
2 PLACES
.125 TYP.
.250 TYP.
.145
REF.
.500
MIN.
.550
.530
.285
±.002
.060 DIA. TYP.
3 PLACES
.400
.940
.200
OM6028SC, OM6031SC, OM6032SC
OM6025SC, OM6026SC, OM6027SC
NOTE: MOSFETs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information.
PACKAGE OPTIONS
MOD PAK
6 PIN SIP
MECHANICAL OUTLINES
Page 3
3.1 - 99
OM6025SC - OM6032SC
3.1
ELECTRICAL CHARACTERISTICS: OM6025SC, OM6032SC (T
C
= 25° unless otherwise noted)
Characteristic Symbol Min. Typ. Max. Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (VGS= 0, ID= 0.25 mA) V
(BR)DSS
400 - - Vdc
Zero Gate Voltage Drain I
DSS
mAdc
(VDS= 400 V, VGS= 0) - - 0.25
(VDS= 400 V, VGS= 0, TJ= 125° C) - - 1.0
Gate-Body Leakage Current, Forward (V
GSF
= 20 Vdc, VDS= 0) I
GSSF
- - 100 nAdc
Gate-Body Leakage Current, Reverse (V
GSR
= 20 Vdc, VDS= 0) I
GSSR
- - 100 nAdc
ON CHARACTERISTICS*
Gate-Threshold Voltage V
GS(th)
Vdc
(VDS= VGS, ID= 0.25 mAdc 2.0 3.0 4.0
(TJ= 125° C) 1.5 - 3.5
Static Drain-Source On-Resistance (VGS= 10 Vdc, ID= 12 Adc) r
DS(on)
- - 0.20 Ohm
Drain-Source On-Voltage (VGS= 10 Vdc) V
DS(on)
Vdc
(ID= 24 A) - - 5.4
(ID= 12 A, TJ= 125° C) - - 5.4
Forward Transconductance (VDS= 15 Vdc, ID= 12 Adc) g
FS
14 - - mhos
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS= 25 V, VGS= 0, C
iss
- 5600 - pF
Output Capacitance f = 1.0 MHz) C
oss
-78-
Transfer Capacitance C
rss
- 230 -
SWITCHING CHARACTERISTICS
Turn-On Delay Time t
d(on)
-70-ns
Rise Time (VDD= 250 V, ID= 24 A, t
r
- 190 -
Turn-Off Delay Time R
gen
= 4.3 ohms) t
d(off)
- 160 -
Fall Time t
f
- 160 -
Total Gate Charge (VDS= 400 V, ID= 24 A, Q
g
- 110 140 nC
Gate-Source Charge VGS= 10 V) Q
gs
-20-
Gate-Drain Charge Q
gd
-55-
SOURCE DRAIN DIODE CHARACTERISTICS
Forward On-Voltage V
SD
- 1.1 1.6 Vdc
Forward Turn-On Time (IS= 24 A, d/dt = 100 A/µs) t
on
**
ns
Reverse Recovery Time t
rr
- 500 1000
ELECTRICAL CHARACTERISTICS: OM6026SC, OM6031SC (T
C
= 25° unless otherwise noted)
Characteristic Symbol Min. Typ. Max. Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (VGS= 0, ID= 0.25 mA) V
(BR)DSS
500 - - Vdc
Zero Gate Voltage Drain I
DSS
mAdc
(VDS= 500 V, VGS= 0) - - 0.25
(VDS= 500 V, VGS= 0, TJ= 125° C) - - 1.0
Gate-Body Leakage Current, Forward (V
GSF
= 20 Vdc, VDS= 0) I
GSSF
- - 100 nAdc
Gate-Body Leakage Current, Reverse (V
GSR
= 20 Vdc, VDS= 0) I
GSSR
- - 100 nAdc
ON CHARACTERISTICS*
Gate-Threshold Voltage V
GS(th)
Vdc
(VDS= VGS, ID= 0.25 mAdc 2.0 3.0 4.0
(TJ= 125° C) 1.5 - 3.5
Static Drain-Source On-Resistance (VGS= 10 Vdc, ID= 11 Adc) r
DS(on)
- - 0.27 Ohm
Drain-Source On-Voltage (VGS= 10 Vdc) V
DS(on)
Vdc
(ID= 22 A) - - 8.0
(ID= 11 A, TJ= 125° C) - - 8.0
Forward Transconductance (VDS= 15 Vdc, ID= 11 Adc) g
FS
13 - - mhos
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS= 25 V, VGS= 0, C
iss
- 5600 - pF
Output Capacitance f = 1.0 MHz) C
oss
- 680 -
Transfer Capacitance C
rss
- 200 -
SWITCHING CHARACTERISTICS
Turn-On Delay Time t
d(on)
-70-ns
Rise Time (VDD= 250 V, ID= 22 A, t
r
- 190 -
Turn-Off Delay Time R
gen
= 4.3 ohms) T
d(off)
- 160 -
Fall Time t
f
- 160 -
Total Gate Charge (VDS= 400 V, ID= 22 A, Q
g
- 115 140 nC
Gate-Source Charge VGS= 10 V) Q
gs
-20-
Gate-Drain Charge Q
gd
-60-
SOURCE DRAIN DIODE CHARACTERISTICS
Forward On-Voltage V
SD
- 1.1 1.6 Vdc
Forward Turn-On Time (IS= 22 A, d/dt = 100 A/µs) t
on
**
ns
Reverse Recovery Time t
rr
- 500 1000
* Indicates Pulse Test = 300 µsec, Duty Cycle = 2%
** Limited by circuit inductance
Page 4
OM6025SC - OM6032SC
3.1
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
ELECTRICAL CHARACTERISTICS: OM6027SC, OM6028SC (T
C
= 25° unless otherwise noted)
Characteristic Symbol Min. Typ. Max. Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (VGS= 0, ID= 0.25 mA) V
(BR)DSS
1000 - - Vdc
Zero Gate Voltage Drain I
DSS
mAdc
(VDS= 1000 V, VGS= 0) - - 0.25
(VDS= 1000 V, VGS= 0, TJ= 125° C) - - 1.0
Gate-Body Leakage Current, Forward (V
GSF
= 20 Vdc, VDS= 0) I
GSSF
- - 100 nAdc
Gate-Body Leakage Current, Reverse (V
GSR
= 20 Vdc, VDS= 0) I
GSSR
- - 100 nAdc
ON CHARACTERISTICS*
Gate-Threshold Voltage V
GS(th)
Vdc
(VDS= VGS, ID= 0.25 mAdc 2.0 3.0 4.0
(TJ= 125° C) 1.5 - 3.5
Static Drain-Source On-Resistance (VGS= 10 Vdc, ID= 5 Adc) r
DS(on)
- - 1.3 Ohm
Drain-Source On-Voltage (VGS= 10 Vdc) V
DS(on)
Vdc
(ID= 10 A) --15
(ID= 5 A, TJ= 125° C) - - 15.3
Forward Transconductance (VDS= 15 Vdc, ID= 5 Adc) g
FS
5.0 - - mhos
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS= 25 V, VGS= 0, C
iss
- 3900 - pF
Output Capacitance f = 1.0 MHz) C
oss
- 300 -
Transfer Capacitance C
rss
-65-
SWITCHING CHARACTERISTICS
Turn-On Delay Time t
d(on)
-40-ns
Rise Time (VDD= 250 V, ID= 5 A, t
r
- 100 -
Turn-Off Delay Time R
gen
= 4.3 ohms) t
d(off)
- 100 -
Fall Time t
f
- 100 -
Total Gate Charge (VDS= 400 V, ID= 10 A, Q
g
- 100 140 nC
Gate-Source Charge VGS= 10 V) Q
gs
-20-
Gate-Drain Charge Q
gd
-40-
SOURCE DRAIN DIODE CHARACTERISTICS
Forward On-Voltage V
SD
- - 1.5 Vdc
Forward Turn-On Time (IS= 10 A, d/dt = 100 A/µs) t
on
**
ns
Reverse Recovery Time t
rr
- 600 1000
* Indicates Pulse Test = 300 µsec, Duty Cycle = 2%
** Limited by circuit inductance
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