Datasheet NUP46V8P5 Datasheet (ON) [ru]

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NUP46V8P5
Low Capacitance Quad Array for ESD Protection
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Features
ESD Protection: IEC61000-4-2: Level 4
Four Separate Unidirectional Configurations for Protection
Low Leakage Current < 1 mA @ 3 V
Small SOT-953 SMT Package
Low Capacitance
This is a Pb-Free Device
Benefits
Provides Protection for ESD Industry Standards: IEC 61000, HBM
Protects Four Lines Against Transient Voltage Conditions
Minimize Power Consumption of the System
Minimize PCB Board Space
Typical Applications
Cellular and Portable Electronics
Serial and Parallel Ports
Microprocessor Based Equipment
Notebooks, Desktops, Servers
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SOT-953
CASE 526AB
MARKING DIAGRAM
6 M
1
6 = Specific Device Code M = Date Code
ORDERING INFORMATION
Device Package Shipping
NUP46V8P5T5G SOT-953
(Pb-Free)
4
8000 /
Tape & Reel
© Semiconductor Components Industries, LLC, 2008
January, 2008 - Rev. 0
†For information on tape and reel specifications,
including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
1 Publication Order Number:
NUP46V8P5/D
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NUP46V8P5
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
V
QV
I
V
RWM
V
V
Z
I
Z
Maximum Reverse Peak Pulse Current
PP
Clamping Voltage @ I
C
Working Peak Reverse Voltage
I
Maximum Reverse Leakage Current @ V
R
Breakdown Voltage @ I
BR
I
Test Current
T
Maximum Temperature Coefficient of V
BR
I
Forward Current
F
Forward Voltage @ I
F
Maximum Zener Impedance @ I
ZT
Reverse Current
ZK
Maximum Zener Impedance @ I
ZK
MAXIMUM RATINGS (T
Parameter
PP
T
F
= 25°C unless otherwise noted)
A
ZT
ZK
BR
RWM
VCV
BR
V
RWM
I
I
F
I
V
R
F
I
T
I
PP
Uni-Directional
V
Characteristic Symbol Value Unit
Peak Power Dissipation (8 X 20 ms @ TA = 25°C) (Note 1)
Thermal Resistance Junction-to-Ambient
P
R
Above 25°C, Derate
Maximum Junction Temperature T
Jmax
Operating Junction and Storage Temperature Range TJ T
Lead Solder Temperature (10 seconds duration) T
Human Body Model (HBM)
ESD 8000
Machine Model (MM)
PK
q
JA
stg
L
10 W
560
4.5
°C/W
mW/°C
150 °C
-55 to +150 °C
260 °C
400
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
ELECTRICAL CHARACTERISTICS (T
Device
= 25°C)
A
Device
Marking
Breakdown Voltage
@ 1 mA (Volts)
V
BR
Min Nom Max V
Leakage Current
@ V
I
RM
RM
I
RWM
(mA)
RWM
Typ Capacitance
@ 0 V Bias (pF)
(Note 2)
Typ Capacitance
@ 3 V Bias (pF)
(Note 2)
Typ Max Typ Max
NUP46V8P5 6 6.47 6.8 7.14 4.3 1.0 12 15 6.7 9.5
1. Non-repetitive current per Figure 1.
2. Capacitance of one diode at f = 1 MHz, V
= 0 V, TA = 25°C.
R
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NUP46V8P5
TYPICAL ELECTRICAL CHARACTERISTICS
10
1
, REVERSE LEAKAGE (mA)
R
I
0.1
-100 0 150 200
-50 10050
T, TEMPERATURE (°C)
Figure 1. Reverse Leakage versus
Temperature
100
t
r
90
80
70
60
50
40
30
20
% OF PEAK PULSE CURRENT
10
0
020406080
t
P
PEAK VALUE I
PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms
HALF VALUE I
t, TIME (ms)
RSM
@ 8 ms
RSM
/2 @ 20 ms
Figure 3. 8 × 20 ms Pulse Waveform
14
12
10
8
6
4
1 MHz FREQUENCY
TYPICAL CAPACITANCE (pF)
2
0
01 2
BIAS VOLTAGE (V)
Figure 2. Capacitance
1
0.1
0.01
, FORWARD CURRENT (A)
F
I
0.001
VF, FORWARD VOLTAGE (V)
Figure 4. Forward Voltage
3
TA = 25°C
1.81.61.41.21.00.80.6
110
100
PP
90
80
70
60
50
40
30
20
% OF RATED POWER OR I
10
0
Figure 5. Power Derating Curve
1501251007550250
TA, AMBIENT TEMPERATURE (°C)
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NUP46V8P5
PACKAGE DIMENSIONS
SOT-953
CASE 527AB-01
ISSUE O
D
45
12 3
e
-Y-
A
L
-X-
E
H
E
C
b
5X
X0.08
Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.
MILLIMETERS
DIM MIN NOM MAX
A 0.44 0.48 0.50 b 0.10 0.15 0.20 C 0.05 0.10 0.15 D 0.95 1.00 1.05 E 0.75 0.80 0.85 e 0.35 BSC L 0.05 0.10 0.15
H
E
0.95 1.00 1.05
INCHES
MIN NOM MAX
0.017 0.019 0.020
0.0039 0.0059 0.0079
0.002 0.004 0.006
0.037 0.039 0.041
0.03 0.032 0.034
0.014 BSC
0.0019 0.0039 0.0059
0.037 0.039 0.041
SOLDERING FOOTPRINT*
0.35
0.35
0.014
0.014
0.90
0.0354
0.20
0.08
0.20
0.08
mm
ǒ
SCALE 20:1
inches
Ǔ
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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NUP46V8P5/D
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