Datasheet NTS4409N Datasheet (ON Semiconductor)

NTS4409N

t

Small Signal MOSFET

25 V, 0.75 A, Single, N−Channel,
ESD Protection, SC−70/SOT−323

Features

• Advance Planar Technology for Fast Switching, Low R

• Higher Efficiency Extending Battery Life

• This is a Pb−Free Device

Applications

• Boost and Buck Converter

• Load Switch

• Battery Protection

DS(on)

V

(BR)DSS

25 V

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R

Typ ID Max

DS(on)

249 mW @ 4.5 V
299 mW @ 2.7 V

SC−70 (3−Leads)

0.75 A

MAXIMUM RATINGS (T

Drain−to−Source Voltage V
Gate−to−Source Voltage V
Drain Current t < 5 s TA = 25°C I

Continuous Drain Curren
(Note 1)

Power Dissipation (Note 1) Steady State P
Power Dissipation (Note 1) t v 5 s P
Pulsed Drain Current
Operating Junction and Storage Temperature TJ,

Source Current (Body Diode) (Note 1) I
Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)
ESD Rating − Machine Model 250 V

= 25°C unless otherwise noted)

J

Rating Symbol Value Unit

25 V

"8.0 V

0.75 A

0.7

0.28 W

0.33 W

3.0 A

−55 to
+150

0.3 A

260 °C

A

°C

Steady

State

DSS

GS

T

I

I

DM

STG

T

TA = 25°C
TA = 75°C 0.6

tp = 10 ms

D
D

D
D

S

L

THERMAL RESISTANCE RATINGS

Rating Symbol Max Unit

Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient − t v 5 s (Note 1)

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.

1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).

R

q

JA

R

q

JA

450
375

°C/W

Gate31

Drain

Source

2

Top View

MARKING DIAGRAM &

3

1

2

SC−70/SOT−323

CASE 419

STYLE 8

T4 = Device Code
W = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)

PIN ASSIGNMENT

3

Drain

T4 WG

G

1

Gate

2

Source

ORDERING INFORMATION

Device Package Shipping

NTS4409NT1G SOT−323

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

3000/Tape & Reel

†

© Semiconductor Components Industries, LLC, 2006

January, 2006 − Rev. 2

1 Publication Order Number:

NTS4409N/D

NTS4409N

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

J

Characteristic Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage

Temperature Coefficient
Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

V

(BR)DSS

V

(BR)DSS/TJ

DSS

GSS

V

GS

V

= 0 V,

GS

V

= 20 V

DS

V

= 0 V, V

DS

= 0 V, I

= 250 mA

D

T

J

T

J

T

J

= 8.0 V 100 nA

GS

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage V
Negative Threshold Temperature

Coefficient

V

GS(TH)/TJ

Drain−to−Source On Resistance R

Forward Transconductance g

GS(TH)

DS(on)

FS

V

= VDS, ID = 250 mA

GS

V

= 4.5 V, I

GS

V

= 2.7 V, I

GS

V

= 4.5 V, I

GS

V

= 5.0 V, I

DS

= 0.6 A 249 350

D

= 0.2 A 299 400

D

= 1.2 A 260

D

= 0.5 A 0.5 S

D

CHARGES AND CAPACITANCES

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q

ISS
OSS
RSS

G(TOT)

G(TH)

GS

GD

V

= 0 V, f = 1.0 MHz,

GS

V

GS

V

DS

= 4.5 V, V

I

= 0.8 A

D

= 10 V

DS

= 15 V,

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time t
Rise Time t
Turn−Off Delay Time t
Fall Time t

d(ON)

r

d(OFF)

f

V

GS

I

D

= 4.5 V, V
= 0.7 A, R

DS

= 51 W

G

= 15 V,

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage V

SD

V

GS

I

S

= 0 V,

= 0.6 A

T

J

2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

3. Switching characteristics are independent of operating junction temperatures.

25 V

30 mV/°C

= 25°C 0.5 mA
= 70°C 2.0

= 125°C 5.0

0.65 1.5 V

−2.0 mV/°C

49 60

22.4 30

8.0 12

1.2 1.5

0.2

0.28 0.50

0.3 0.40

5.0 12

8.2 8.0
23 35
41 60

= 25°C 0.82 1.20 V

mW

pF

nC

ns

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2

NTS4409N

3.2
8 V

4.5 V

2.4

1.6

0.8

DRAIN CURRENT (AMPS)

D,

I

0

031

0.5 1.5 2.5

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

0.8
VGS = 4.5 V

0.6

TYPICAL PERFORMANCE CURVES (T

3.2

2.4

1.6

0.8

DRAIN CURRENT (AMPS)

D,

I

0.8

0.6

3 V

2.5 V

TJ = 25°C

VGS = 2 V

VGS = 1.5 V

2

= 25°C unless otherwise noted)

J

VDS ≥ 10 V

25°C

0

0

TJ = 125°C

0.8

TJ = −55°C

2.4

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

VGS = 2.5 V

TJ = 125°C

3.21.6 4

TJ = 125°C

0.4

TJ = 25°C

0.2

TJ = −55°C

DRAIN−TO−SOURCE RESISTANCE (W)

0

0 3.2

DS(on),

R

0.8 1.6
ID, DRAIN CURRENT (AMPS)

2.4

Figure 3. On−Resistance vs. Drain Current and

Temperature

2

ID = 0.75 A

1.8

1.6

1.4

1.2

DRAIN−TO−SOURCE

1

DS(on),

0.8

R

RESISTANCE (NORMALIZED)

0.6

−50 0−25 25

50 125100

TJ, JUNCTION TEMPERATURE (°C)

VGS = 2.5 V

VGS = 4.5 V

75 150

0.4

0.2

DRAIN−TO−SOURCE RESISTANCE (W)

0

0 3.2

DS(on),

R

0.8 1.6
ID, DRAIN CURRENT (AMPS)

TJ = 25°C

TJ = −55°C

2.4

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

100

80

C, CAPACITANCE (pF)

60

40

20

0

52515

DRAIN−TO−SOURCE VOLTAGE (VOLTS)

C

iss

C

oss

C

rss

100

20

TJ = 25°C

VGS = 0 V

Figure 5. On−Resistance Variation with

Temperature

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Figure 6. Capacitance Variation

3

NTS4409N

TYPICAL PERFORMANCE CURVES (T

5

4

3

Q

GS

2

1

GATE−TO−SOURCE VOLTAGE (VOLTS)

0

GS,

0 0.6

V

Qg, TOTAL GATE CHARGE (nC)

Figure 7. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

Q

G(TOT)

Q

GD

0.40.2

0.8 1.0 1.2

V

GS

ID = 0.8 A
TJ = 25°C

1.4

= 25°C unless otherwise noted)

J

3.2
VGS = 0 V

2.4

1.6

0.8

, SOURCE CURRENT (AMPS)

S

I

TJ = 125°C

0

0.60.4

0.8

VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

Figure 8. Diode Forward Voltage vs. Current

TJ = 25°C

10.2

1.20

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4

NTS4409N

PACKAGE DIMENSIONS

SC−70 (SOT−323)

CASE 419−04

ISSUE M

0.05 (0.002)

D

e1

3

H

E

12

e

A1

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

E

b

A

A2

DIMAMIN NOM MAX MIN

A1 0.00 0.05 0.10 0.000
A2 0.7 REF

b 0.30 0.35 0.40 0.012
c 0.10 0.18 0.25 0.004
D 1.80 2.10 2.20 0.071
E 1.15 1.24 1.35 0.045
e 1.20 1.30 1.40 0.047

e1

L

c

H

E

STYLE 8:

L

MILLIMETERS

0.80 0.90 1.00 0.032

0.65 BSC

0.425 REF

2.00 2.10 2.40 0.079 0.083 0.095

PIN 1. GATE

2. SOURCE

3. DRAIN

INCHES

NOM MAX

0.035 0.040

0.002 0.004

0.028 REF

0.014 0.016

0.007 0.010

0.083 0.087

0.049 0.053

0.051 0.055

0.026 BSC

0.017 REF

SOLDERING FOOTPRINT*

0.65

0.65

0.025

0.025

1.9

0.075

0.9

0.035

0.7

0.028

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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5

NTS4409N

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