Datasheet NTR4003N Datasheet (ON Semiconductor)

NTR4003N

Small Signal MOSFET

30 V, 0.56 A, Single N−Channel, SOT−23

Features

• Low Gate Voltage Threshold (V

Design

• Low Gate Charge for Fast Switching

• ESD Protected Gate

• SOT−23 Package Provides Excellent Thermal Performance

• Minimum Breakdown Voltage Rating of 30 V

• These are Pb−Free Devices

Applications

• Notebooks:

♦ Level Shifters
♦ Logic Switches
♦ Low Side Load Switches

• Portable Applications

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain

Current (Note 1)

Power Dissipation
(Note 1)

Continuous Drain
Current (Note 1)

Power Dissipation
(Note 1)

Pulsed Drain Current
Operating Junction and Storage Temperature TJ,

Source Current (Body Diode) I
Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Unit

Junction−to−Ambient − Steady State (Note 1)
Junction−to−Ambient − t < 10 s (Note 1)
Junction−to−Ambient − Steady State (Note 2)

1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).

2. Surface−mounted on FR4 board using the minimum recommended pad size.

= 25°C unless otherwise noted)

J

Steady
State

Steady State P

t < 10 s

t < 5 s P

tp = 10 ms

) to Facilitate Drive Circuit

GS(TH)

Symbol Value Unit

JA
JA
JA

30 V

±20 V

0.5

0.69 W

0.56

0.83 W

1.7 A

−55 to
150

1.0 A

260 °C

180
150
300

DSS

GS

TA = 25°C
TA = 85°C 0.37

TA = 25°C
TA = 85°C 0.40

I

D

I

D

I

DM

Tstg

S

T

R

q

R

q

R

q

D

D

L

A

A

°C

°C/W

http://onsemi.com

(BR)DSS

30 V

TYP

R

DS(on)

1.0 W @ 4.0 V

1.5 W @ 2.5 V

ID MAXV

0.56 A

N−Channel

3

1

2

MARKING DIAGRAM/

PIN ASSIGNMENT

3

1

2

SOT−23
CASE 318
STYLE 21

TR8 = Specific Device Code
M = Date Code
G = Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and overbar may vary

depending upon manufacturing location.

3

Drain

TR8 M G

G

1

Gate2Source

ORDERING INFORMATION

Device Package Shipping

NTR4003NT1G SOT−23

(Pb−Free)

NTR4003NT3G SOT−23

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

3000/Tape & Reel

10,000/Tape & Reel

†

© Semiconductor Components Industries, LLC, 2006

May, 2006 − Rev. 0

1 Publication Order Number:

NTR4003N/D

NTR4003N

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

J

Symbol Test Condition Min Typ Max Units

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage

Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

V

(BR)DSS

V

(BR)DSS/TJ

DSS

GSS

VGS = 0 V, ID = 100 mA

VGS = 0 V,
V

= 30 V

DS

VDS = 0 V, VGS = ±10 V ±1.0

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage
Negative Threshold

Temperature Coefficient

Drain−to−Source On Resistance

Forward Transconductance g

V

GS(TH)

V

GS(TH)/TJ

R

DS(on)

FS

VGS = VDS, ID = 250 mA

VGS = 4.0 V, ID = 10 mA 1.0 1.5
VGS = 2.5 V, ID = 10 mA 1.5 2.0
VDS = 3.0 V, ID = 10 mA 0.33 S

CHARGES AND CAPACITANCES

Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Gate Charge Q
Gate−to−Drain Charge Q

C

iss
oss
rss

G(TOT)

G(TH)

GS
GD

VGS = 0 V, f = 1.0 MHz,

V

= 5.0 V

DS

V

= 5.0 V, V

GS

ID = 0.1 A

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time
Rise Time t
Turn−Off Delay Time t
Fall Time t

t

d(on)

d(off)

r

f

VGS = 4.5 V, VDD = 5.0 V,

= 0.1 A, RG = 50 W

I

D

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

V

SD

RR

VGS = 0 V,
I

= 10 mA

S

VGS = 0 V, dIS/dt = 8A/ms,

IS = 10 mA

3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.

30 V

40 mV/°C

TJ = 25°C 1.0

0.8 1.4 V

3.4 mV/°C

21

19.7

8.1

1.15

= 24 V,

DS

0.15

0.32

0.23

16.7

47.9

65.1

64.2

TJ = 25°C 0.65 0.7

TJ = 125°C 0.45

14 ns

mA

mA

W

pF

nC

ns

V

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2

NTR4003N

0

1.6

6

5

R

DRAIN−TO−SOURCE RESISTANCE (

)

VGS = 10 V to 5 V

1.2

0.8

DRAIN CURRENT (A)

0.4

D,

I

0

0

, DRAIN−TO−SOURCE VOLTAGE (V)

V

DS

Figure 1. On−Region Characteristics

10

8

TYPICAL PERFORMANCE CURVES (T

1.6

4.5 V

1.2

4 V

3.5 V

2.5 V

1

2

ID = 0.2 A

0.8

DRAIN CURRENT (A)

0.4

D,

I

0.8

= 25°C unless otherwise noted)

J

VDS ≥ 10 V

0

0

14

2

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 2. Transfer Characteristics

1

VGS = 10 V

TJ = −55°C

TJ = 25°C

TJ = 125°C

3

TJ = 125°C

6

4

2

DRAIN−TO−SOURCE RESISTANCE (W)

0

2.4 2.8 3.2 3.6 4

DS(on),

R

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

W

1.80
ID = 0.3 A

V

1.60

1.40

= 4.5 V

GS

0.6

0.4

0.2

DRAIN−TO−SOURCE RESISTANCE (W)

TJ = 25°C

TJ = −55°C

0

0

DS(on),

R

0.1 0.2 0.3 0.4 0.5 0.
ID, DRAIN CURRENT (AMPS)

Figure 4. On−Resistance vs. Drain Current and

Temperature

1000

VGS = 0 V

TJ = 150°C

1.20

1.00

(NORMALIZED)

100

, LEAKAGE (nA)

DSS

I

TJ = 125°C

0.80

0.60

DS(on),

−50 0−25 25
TJ, JUNCTION TEMPERATURE (°C)

75 150

50 125100

10

03

5

V

DS,

10

DRAIN−TO−SOURCE VOLTAGE (VOL TS)

15

20

25

Figure 5. On−Resistance Variation with

Temperature

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Figure 6. Drain−to−Source Leakage Current

vs. Voltage

3

NTR4003N

)

50

5

.2

TYPICAL PERFORMANCE CURVES (T

40

30

20

C, CAPACITANCE (pF)

10

0

08

4

DRAIN−TO−SOURCE VOLTAGE (V)

Figure 7. Capacitance Variation Figure 8. Gate−to−Source & Drain−to−Source

12

1

TJ = 25°C
V

= 0 V

GS

16

VGS = 0 V

= 25°C unless otherwise noted)

J

TJ = 25°C
I

= 0.1 A

D

4

3

C

iss

C

oss

C

rss

20

2

1

GATE−TO−SOURCE VOLTAGE (V

GS,

0

V

0

0.4 1

, TOTAL GATE CHARGE (nC)

Q

G

0.8

V oltage vs. Total Charge

0.1

0.01

, SOURCE CURRENT (A)

S

I

TJ = 150°C

0.001

0.4 0.6
V

, SOURCE−TO−DRAIN VOLTAGE (V)

SD

Figure 9. Diode Forward Voltage vs. Current

TJ = 25°C

0.8

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4

A

A1

NTR4003N

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AN

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

D

H

SEE VIEW C

E

c

0.25

3

E

12

b

e

q

L

L1

VIEW C

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.

4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.

DIMAMIN NOM MAX MIN

A1 0.01 0.06 0.10 0.001

b 0.37 0.44 0.50 0.015
c 0.09 0.13 0.18 0.003
D 2.80 2.90 3.04 0.110
E 1.20 1.30 1.40 0.047
e 1.78 1.90 2.04 0.070
L 0.10 0.20 0.30 0.004

L1

H

E

STYLE 21:

PIN 1. GATE

MILLIMETERS

0.89 1.00 1.11 0.035

0.35 0.54 0.69 0.014 0.021 0.029

2.10 2.40 2.64 0.083 0.094 0.104

2. SOURCE

3. DRAIN

INCHES

NOM MAX

0.040 0.044

0.002 0.004

0.018 0.020

0.005 0.007

0.114 0.120

0.051 0.055

0.075 0.081

0.008 0.012

SOLDERING FOOTPRINT*

0.95

0.95

0.037

0.9

0.035

0.8

0.031

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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0.037

2.0

0.079

SCALE 10:1

ǒ

inches

mm

Ǔ

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NTR4003N/D