Datasheet NTE7141 Datasheet (NTE)

Page 1
NTE7141
Integrated Circuit
Dual BIMOS Operational Amplifier
w
/MOSFET Input, Bipolar Output
Description:
The NTE7141 is a dual, operational amplifier in an 8–Lead Mini–DIP type package that combines the advantages of MOS and bipolar transistors on the same monolithic chip. The gate–protected MOS­FET (PMOS) input transistors provide high input impredance and a wide common–mode input volt­age range (typically to 0.5V below the negative supply rail). The bipolar output transistors allow a wide output voltage swing and provide a high output current capability.
Features:
D Internally Compensated D MOSFET Input Stage:
Very High Input Impedance Very Low Input Current Wide Common–Mode Input Voltage Range Rugged Input Stage – Bipolar Diode Protected
D Directly Replaces Industry Type 1458 in Most Applications D Operation From 4V–to–36V Single or Dual Supplies D Characterized for ±15V Operation for TTL Supply Systems with Operation down to 4V D Wide Bandwidth D High Voltage–Follower Slew Rate D Output Swings to Within 0.5V of Negative Supply at V+ = 5V, V– = 0
Applications:
D Ground–Referenced Single–Supply Amplifiers in Automobile and Portable Instrumentation D Sample and Hold Amplifiers D Long–Duration Timers/Multivibrators (Microseconds – Minutes – Hours) D Photocurrent Instrumentation D Active Filters D Intrusion Alarm Systems D Comparators D Instrumentation Amplifiers D Function Generators D Power Supplies
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Absolute Maximum Ratings:
DC Supply Voltage (Between V+ and V– Terminals) 36V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Voltage Range 4 to 36V or ±2 to ±18V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Differential–Mode Input Voltage ±8V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Common–Mode DC Input Voltage (V+ +8V) to (V– –0.5V). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input–Terminal Current 1mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Device Dissipation, P
D
630mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Linearly Above +55°C 6.67mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T Storage Temperature Range, T
opr
stg
Lead Temperature (During Soldering, 1/16 from case, 10sec max), T
L
40° to +85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+265°C. . . . . . . . . . . . . . . . .
Output Short–Circuit Duration (Note 1) Unlimited. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Short circuit may be applied to GND or to either supply. Temperature and/or supply voltages
must be limited to keep dissipation within maximum rating.
Electrical Characteristics: (V+ = +15V, V– = 15V unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Input Offset Voltage |VIO| TA = +25°C 5 15 mV
TA = –40° to +85°C 10 mV
Input Offset Current |IIO| TA = +25°C 0.5 30 pA
TA = +85°C 32 pA
Input Current I
Large–Signal Voltage Gain A
Common–Mode Rejection Ratio CMRR TA = +25°C 32 320 µV/V
Common–Mode Input–Voltage
Range
V
ICR
TA = +25°C 10 50 pA
I
TA = +85°C 640 pA Note 2 TA = +25°C 20k 100k V/V
OL
86 100 dB
TA = –40° to +85°C 63k V/V
96 dB
70 90 dB
TA = –40° to +85°C 32 µV/V
90 dB
TA = +25°C –15 –15.5
to
+12.5
TA = –40° to +85°C –15
to
+12.3
+11 V
V
Power Supply Rejection Ratio ∆VIO/V TA = +25°C 100 150 µV/V
PSSR 76 80 dB
VIO/V TA = 40° to +85°C 150 µV/V
PSSR 76 dB
Note 2. VO = 26V
, +12V, –14V and RL = 2kΩ.
P–P
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Electrical Characteristics (Cont’d): (V+ = +15V, V– = 15V unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Maximum Output Voltage VOM+ TA = +25°C, RL = 2k +12 +13 V
VOM– –14 –14.4 V
TA = +25°C, Note 3 0.4 0.13 V VOM+ TA = –40° to +85°C, RL = 2k +12.4 V VOM– –14.2 V
Supply Current, For Both Amps I+ TA = +25°C 8 12 mA
TA = –40° to +85°C 8.4 mA
Total Device Dissipation P
TA = +25°C 240 360 mW
D
TA = –40° to +85°C 252 mW
Temperature Coefficient of
VIO/T TA = 40° to +85°C 15 µA/°C
Input Offset Voltage Input Resistance R Input Capacitance C Output Resistance R Equivalent Wideband Input Noise
e
Voltage RS = 100
TA = +25°C 1.5 TΩ
I
TA = +25°C 4 pF
I
TA = +25°C 60
O n
TA = +25°C,
f = 1kHz 40 nV/Hz f = 10kHz 12 nV/Hz
Short–Circuit Current to Opposite
Supply
Source IOM+ TA = +25°C 40 mA
Sink IOM– 11 mA
Gain–Bandwidth Product f
TA = +25°C 4.5 MHz
T
Slew Rate SR TA = +25°C 9 V/µs Transient Response:
Rise Time t
TA = +25°C, RL = 2k, CL = 100pF 0.08 µs
r
Overshoot 10 %
Setting Time at 10V
1mV t
10mV
P–P
TA = +25°C, RL = 2k, CL = 100pF,
s
Voltage Follower
4.5 µs 1.4 µs
Crosstalk CT TA = +25°C, f = 1kHz 120 dB
Note 3. V+ = 5V, V– = GND, I
= 200µA.
Sink
Electrical Characteristics: (TA = +25°C, V+ = +5V, V– = –5V unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Input Offset Voltage |VIO| 5 mV Input Offset Current |IIO| 0.1 pA Input Current I Input Resistance R Large–Signal Voltage Gain A
I
I
OL
Common–Mode Rejection Ratio CMRR 32 320 µV/V
2 pA 1 T 100k V/V 100 dB
70 90 dB
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Electrical Characteristics (Cont’d): (TA = +25°C, V+ = +5V, V– = –5V unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Common–Mode Input–Voltage Range
Power Supply Rejection Ratio
Maximum Output Voltage
Maximum Output Current:
Source IOM+ 20 mA
Sink IOM– 1 mA Slew Rate SR 7 V/µs Gain–Bandwidth Product f Supply Current I+ 4 mA Device Dissipation P
V
ICR
VIO/V 31.6 µV/V
PSSR 90 dB
VOM+ 3.0 V VOM– 0.3 V
T
D
Pin Connection Diagram
Output A
V+1
8
0.5 V +2.6 V
4.5 MHz
20 mW
Invert Input A
Non–Invert Input A
V–
85
14
.390 (9.9)
Max
2 3
4
7
Output B
6
Invert Input B
5
Non–Invert Input B
.260 (6.6)
(7.62)
.155
(3.93)
.300
.100 (2.54)
.145 (3.68)
.300 (7.62)
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