Datasheet NTE364 Specification

NTE364

Silicon NPN Transistor

RF Power

Description:

The NTE364 is designed for UHF large signal applications required in industrial and commercial FM
equipment operating at 512MHz.

Features:

D Specified 10 Volt, 512MHz Characteristics:

Power Output = 10W
Minimum Gain = 6.0dB

D RF ballasting provides protection against device damage due to load mismatch
D Characterized with series equivalent large−signal impedance parameters

Absolute Maximum Ratings:

Collector−Emitter Voltage, V
Collector−Base Voltage, V
Emitter−Base Voltage, V

EBO

Collector Current−Continuous, I
Total Device Dissipation (T

(TA = +25C unless otherwise specified)

CEO

CBO

C

= +25C, Note 1), PD 37.5W...................................

C

16V......................................................

36V.......................................................

4.0V........................................................

2.0A....................................................

Derate above 25C 214mW/C.....................................................

Storage Temperature Range, T

stg

−65 to +200C..........................................

Stud Torque (Note 2) 6.5 in−lbs..........................................................

Note 1 This device is designed for RF operation. The total device dissipation rating applies only

when the device is operated as RF amplifier.

Note 2 For repeated assembly use 5 in−lbs.

Electrical Characteristics:

Parameter Symbol Test Conditions Min Ty p Max Unit

OFF Characteristics

Collector−Emitter Breakdown Voltage V

Emitter−Base Breakdown Voltage V

Collector Cutoff Current I

(TA = +25C unless otherwise specified)

(BR)CEOIC

V

(BR)CESIC

(BR)EBOIE

CES

= 200mA, IB = 0 16 − − V

= 200mA, VBE = 0 36 − − V

= 4.0mA, IC = 0 4 − − V

VCE = 15V, VBE = 0, TC = 55C − 0.5 20 mA

Rev. 5−13

Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified)

Parameter Symbol Test Conditions Min Ty p Max Unit

Collector Cutoff Current I

CBO

VCB = 15V, IE = 0 − − 2.0 mA

On Characteristics

DC Current Gain h

FE

IC = 500mA, VCE = 5.0V 20 80 − −

Dynamic Characteristics

Output Capacitance C

VCB = 12.5V, IE = 0, f = 1.0MHz − 38 45 pF

ob

Functional Test

Common−Emitter Amplifier Power Gain − VCC = 12.5V, P

Collector Efficiency  VCC = 12.5V, P

f = 470MHz

B

E

= 10W, IC = 1.33A 6.0 7.0 −

out

= 10W, IC = 1.3A,

out

60 − − %

.225 (5.72)

E

.063 (1.62)

.005 (0.15)

.530

(13.46)

C

.282 (7.17)

.123 (3.12)

Dia

.630

(16.0)

Seating Plane

Wrench Flat

.250 (6.35) Dia